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Injection‐locked flashlamp‐pumped dye lasers of very narrow linewidth in the 570–720 nm range
J. Appl. Phys. 62, 23–30 (1987)
https://doi.org/10.1063/1.339188
Laser action from syn‐(methyl,chloro) bimane
J. Appl. Phys. 62, 36–40 (1987)
https://doi.org/10.1063/1.339156
The laser emission of rhodamine 110–coumarin bifluorophoric systems under coaxial flashlamp pumping
J. Appl. Phys. 62, 49–50 (1987)
https://doi.org/10.1063/1.339158
Stray‐light correction in photoacoustic measurements of solid samples
J. Appl. Phys. 62, 55–61 (1987)
https://doi.org/10.1063/1.339160
Elastic calculation of the thermal strains and stresses of the multilayered plate
J. Appl. Phys. 62, 62–74 (1987)
https://doi.org/10.1063/1.339162
Energy balance of the high‐pressure mercury discharge with sodium‐ and scandium‐iodide additives
J. Appl. Phys. 62, 79–87 (1987)
https://doi.org/10.1063/1.339164
Potential flow model for the hydromagnetic Rayleigh–Taylor instability in cylindrical plasmas
J. Appl. Phys. 62, 95–100 (1987)
https://doi.org/10.1063/1.339112
Positron‐lifetime studies of hydrogenated amorphous silicon
J. Appl. Phys. 62, 108–116 (1987)
https://doi.org/10.1063/1.339167
Multilevel construction of seeded‐laterally epitaxial silicon films on insulator
J. Appl. Phys. 62, 126–130 (1987)
https://doi.org/10.1063/1.339171
Depth profiling of defects in epilayer semiconductor materials by using synchrotron x‐radiation topography
J. Appl. Phys. 62, 137–144 (1987)
https://doi.org/10.1063/1.339824
Investigation of GaAs/(Al,Ga)As multiple quantum wells by photoreflectance
J. Appl. Phys. 62, 145–151 (1987)
https://doi.org/10.1063/1.339172
Optical and electronic properties of vanadium in gallium arsenide
J. Appl. Phys. 62, 163–170 (1987)
https://doi.org/10.1063/1.339174
Quasiclassical kinetic equation for charge‐carrier transport in a semiconductor
J. Appl. Phys. 62, 177–184 (1987)
https://doi.org/10.1063/1.339178
The contribution of bulk states to the ac conductance of metal‐insulator‐semiconductor diodes
J. Appl. Phys. 62, 185–189 (1987)
https://doi.org/10.1063/1.339179
Solid‐state and electrochemical properties of polyselenophene
J. Appl. Phys. 62, 190–194 (1987)
https://doi.org/10.1063/1.339180
Low‐frequency Raman spectra in disordered cubic zirconia at elevated temperatures
J. Appl. Phys. 62, 250–253 (1987)
https://doi.org/10.1063/1.339190
Raman scattering of SiC: Estimation of the internal stress in 3C‐SiC on Si
J. Appl. Phys. 62, 254–257 (1987)
https://doi.org/10.1063/1.339191
Rapid laser‐induced growth of nitride and oxide layers at a beryllium/liquid interface
J. Appl. Phys. 62, 293–295 (1987)
https://doi.org/10.1063/1.339143
Multilayers of HgTe‐CdTe grown by low‐temperature metalorganic chemical vapor deposition
J. Appl. Phys. 62, 295–297 (1987)
https://doi.org/10.1063/1.339144
Modified double‐channel planar‐buried heterostructure laser with improved high‐temperature stability
J. Appl. Phys. 62, 297–299 (1987)
https://doi.org/10.1063/1.339823
GaAs films grown by vacuum chemical epitaxy using thermally precracked trimethyl‐arsenic
J. Appl. Phys. 62, 299–301 (1987)
https://doi.org/10.1063/1.339145
1.3‐μm integrated external cavity distributed Bragg reflector laser
J. Appl. Phys. 62, 308–310 (1987)
https://doi.org/10.1063/1.339838
Photoconductive gain of a longitudinal detector with an arbitrary absorption profile
J. Appl. Phys. 62, 310–311 (1987)
https://doi.org/10.1063/1.339149
Annealing behavior of Ga+ implanted GaAs/AlGaAs observed by transmission electron microscopy
J. Appl. Phys. 62, 318–320 (1987)
https://doi.org/10.1063/1.339152
Re-examination of important defect complexes in silicon: From microelectronics to quantum computing
P. P. Filippatos, A. Chroneos, et al.
Tutorial: Simulating modern magnetic material systems in mumax3
Jonas J. Joos, Pedram Bassirian, et al.
Piezoelectric thin films and their applications in MEMS: A review
Jinpeng Liu, Hua Tan, et al.