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Exact solution of the Schrodinger equation across an arbitrary one‐dimensional piecewise‐linear potential barrier
J. Appl. Phys. 60, 1555–1559 (1986)
https://doi.org/10.1063/1.337788
Spontaneous radiation of an electron beam in a free‐electron laser with a quadrupole wiggler
J. Appl. Phys. 60, 1584–1590 (1986)
https://doi.org/10.1063/1.337295
Nonlinear optical properties of thin‐film waveguides deposited onto semiconductor‐doped glasses
J. Appl. Phys. 60, 1591–1594 (1986)
https://doi.org/10.1063/1.337296
Mass spectrometric transient study of dc plasma etching of Si in SF6/O2 mixtures
J. Appl. Phys. 60, 1595–1601 (1986)
https://doi.org/10.1063/1.337246
Stoichiometric disturbances in compound semiconductors due to ion implantation
J. Appl. Phys. 60, 1602–1606 (1986)
https://doi.org/10.1063/1.337247
Effective properties of fiber‐reinforced composites: Effects of polydispersity in fiber diameter
J. Appl. Phys. 60, 1611–1613 (1986)
https://doi.org/10.1063/1.337786
Walpole bounds on the effective elastic moduli of isotropic multicomponent composites
J. Appl. Phys. 60, 1618–1624 (1986)
https://doi.org/10.1063/1.337250
On‐line p,T calibration based on well‐known phase transitions
J. Appl. Phys. 60, 1625–1633 (1986)
https://doi.org/10.1063/1.337251
Material properties of high‐quality GaAs epitaxial layers grown on Si substrates
J. Appl. Phys. 60, 1640–1647 (1986)
https://doi.org/10.1063/1.337253
Analysis of the near‐intrinsic and extrinsic photocapacitance due to the EL2 level in boron‐implanted GaAs
J. Appl. Phys. 60, 1661–1669 (1986)
https://doi.org/10.1063/1.337255
Characterization of GaAs and Si by a microwave photoconductance technique
J. Appl. Phys. 60, 1676–1680 (1986)
https://doi.org/10.1063/1.337257
Spatially resolved lifetime measurements in neutron‐transmutation‐doped polycrystalline silicon
J. Appl. Phys. 60, 1681–1688 (1986)
https://doi.org/10.1063/1.337258
The integro‐differential equations predicting transient decay of space‐charge currents in media
J. Appl. Phys. 60, 1689–1698 (1986)
https://doi.org/10.1063/1.337259
Electronic transport investigations on silicon damaged by arsenic ion implantation
J. Appl. Phys. 60, 1699–1704 (1986)
https://doi.org/10.1063/1.337260
Radiation‐induced conductivity of as‐grown and electrodiffused quartz
J. Appl. Phys. 60, 1705–1708 (1986)
https://doi.org/10.1063/1.337261
Electron heating studies in silicon dioxide: Low fields and thick films
J. Appl. Phys. 60, 1719–1726 (1986)
https://doi.org/10.1063/1.337264
Carrier spilling in spreading resistance analysis of Si layers grown by molecular‐beam epitaxy
J. Appl. Phys. 60, 1735–1739 (1986)
https://doi.org/10.1063/1.337267
Hole diffusion length investigation by photon and electron excitation of GaAs Schottky barriers
J. Appl. Phys. 60, 1745–1752 (1986)
https://doi.org/10.1063/1.337269
Electrical and metallurgical investigations of the metallization system: Si/PtSi/V/Al
J. Appl. Phys. 60, 1753–1757 (1986)
https://doi.org/10.1063/1.337775
Magnetic and strain field splitting of the emission lines in the 1.5040–1.5110 eV range in GaAs
J. Appl. Phys. 60, 1767–1769 (1986)
https://doi.org/10.1063/1.337271
A fractal model of dielectric breakdown and prebreakdown in solid dielectrics
J. Appl. Phys. 60, 1770–1773 (1986)
https://doi.org/10.1063/1.337219
A time‐resolved x‐ray absorption study of amorphous Si during pulsed laser irradiation
J. Appl. Phys. 60, 1774–1783 (1986)
https://doi.org/10.1063/1.337220
Defect structure and formation mechanism of drawing‐induced absorption at 630 nm in silica optical fibers
J. Appl. Phys. 60, 1797–1801 (1986)
https://doi.org/10.1063/1.337785
Infrared study of the kinetics of oxidation in porous amorphous silicon
J. Appl. Phys. 60, 1802–1807 (1986)
https://doi.org/10.1063/1.337223
Quantum‐statistical theory of microwave detection using superconducting tunnel junctions
J. Appl. Phys. 60, 1808–1828 (1986)
https://doi.org/10.1063/1.337224
Doping dependence of the Schottky‐barrier height of Ti‐Pt contacts to n‐gallium arsenide
J. Appl. Phys. 60, 1832–1833 (1986)
https://doi.org/10.1063/1.337226
High mobility two‐dimensional hole gas in an Al0.26Ga0.74As/GaAs heterojunction
J. Appl. Phys. 60, 1834–1835 (1986)
https://doi.org/10.1063/1.337227
Phase retardation dependent optical response time of parallel‐aligned liquid crystals
J. Appl. Phys. 60, 1836–1838 (1986)
https://doi.org/10.1063/1.337228
Interpretation of 29Si nuclear magnetic resonance spectra of amorphous hydrogenated silicon
J. Appl. Phys. 60, 1839–1841 (1986)
https://doi.org/10.1063/1.337229
Graphical analysis of processes with multiple activation energies
J. Appl. Phys. 60, 1841–1843 (1986)
https://doi.org/10.1063/1.337230
A step-by-step guide to perform x-ray photoelectron spectroscopy
Grzegorz Greczynski, Lars Hultman
Piezoelectric thin films and their applications in MEMS: A review
Jinpeng Liu, Hua Tan, et al.
Tutorial: Simulating modern magnetic material systems in mumax3
Jonas J. Joos, Pedram Bassirian, et al.