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A spectrum converter dye for enhancement of blue‐green laser efficiency
J. Appl. Phys. 60, 3414–3416 (1986)
https://doi.org/10.1063/1.337639
Theory of transient temperature response of a two‐layer system heated with a localized laser beam
J. Appl. Phys. 60, 3417–3421 (1986)
https://doi.org/10.1063/1.337640
Energy‐loss rate and enhanced diffusion due to a low‐frequency plasma oscillation
J. Appl. Phys. 60, 3422–3426 (1986)
https://doi.org/10.1063/1.337590
Quantitative x‐ray spectroscopy of neon Z‐pinch plasmas
J. Appl. Phys. 60, 3427–3432 (1986)
https://doi.org/10.1063/1.337591
Discharge time lag with electron‐beam injection in a low‐pressure gas
J. Appl. Phys. 60, 3433–3437 (1986)
https://doi.org/10.1063/1.337592
Time‐resolved x‐ray monitoring of laser ablation of and plasma formation from Si
J. Appl. Phys. 60, 3438–3443 (1986)
https://doi.org/10.1063/1.337593
Radiation‐induced transient darkening of optically transparent polymers
J. Appl. Phys. 60, 3460–3465 (1986)
https://doi.org/10.1063/1.337594
Refractive index determination in diamond anvil cells: Results for argon
J. Appl. Phys. 60, 3479–3481 (1986)
https://doi.org/10.1063/1.337597
The effect of pressure on phase selection during nucleation in undercooled bismuth
J. Appl. Phys. 60, 3489–3494 (1986)
https://doi.org/10.1063/1.337599
Si diffusion in GaInAs‐AlInAs high‐electron‐mobility transistor structures
J. Appl. Phys. 60, 3495–3498 (1986)
https://doi.org/10.1063/1.337600
Remote plasma‐enhanced chemical‐vapor deposition of epitaxial Ge films
J. Appl. Phys. 60, 3519–3522 (1986)
https://doi.org/10.1063/1.337604
Single crystals of Nb‐Ta superlattice grown by molecular‐beam epitaxy
J. Appl. Phys. 60, 3523–3526 (1986)
https://doi.org/10.1063/1.337605
Structural characterization of Ti‐Si thin‐film superlattices
J. Appl. Phys. 60, 3527–3531 (1986)
https://doi.org/10.1063/1.337606
Slowness surface measurements for zero‐ and five‐degree [100]‐cut GaAs
J. Appl. Phys. 60, 3532–3538 (1986)
https://doi.org/10.1063/1.337607
Influence of immiscibility in liquid‐phase epitaxy growth of InGaPAs on GaAs
J. Appl. Phys. 60, 3539–3545 (1986)
https://doi.org/10.1063/1.337608
Cross‐sectional transmission electron microscope study of solid phase epitaxial growth in BF+2 ‐implanted (001)Si
J. Appl. Phys. 60, 3546–3549 (1986)
https://doi.org/10.1063/1.337609
Determination of minority‐carrier diffusion length in a p‐silicon wafer by photocurrent generation method
J. Appl. Phys. 60, 3550–3552 (1986)
https://doi.org/10.1063/1.337610
The study of charge carrier kinetics in semiconductors by microwave conductivity measurements
J. Appl. Phys. 60, 3558–3566 (1986)
https://doi.org/10.1063/1.337612
Defects and leakage currents in BF2‐implanted preamorphized silicon
J. Appl. Phys. 60, 3567–3575 (1986)
https://doi.org/10.1063/1.337613
Bounds on the conductivity of a suspension of random impenetrable spheres
J. Appl. Phys. 60, 3576–3581 (1986)
https://doi.org/10.1063/1.337614
Liquid‐phase‐epitaxial growth of Ga0.96Al0.04Sb: Electrical and photoelectrical characterizations
J. Appl. Phys. 60, 3582–3591 (1986)
https://doi.org/10.1063/1.337615
The density of localized states at the semi‐insulating polycrystalline and single‐crystal silicon interface
J. Appl. Phys. 60, 3599–3604 (1986)
https://doi.org/10.1063/1.337565
Measurement of interface states in palladium silicon diodes
J. Appl. Phys. 60, 3611–3615 (1986)
https://doi.org/10.1063/1.337567
Electrical and optical characterization of grain boundaries in polycrystalline cadmium telluride
J. Appl. Phys. 60, 3622–3630 (1986)
https://doi.org/10.1063/1.337569
Characterization of ion‐implantation doping of strained‐layer superlattices. I. Structural properties
J. Appl. Phys. 60, 3631–3640 (1986)
https://doi.org/10.1063/1.337570
Electrical properties of polycrystalline silicon layers under solar illumination
J. Appl. Phys. 60, 3651–3655 (1986)
https://doi.org/10.1063/1.337571
Ferromagnetic relaxation in LPE‐grown Eu‐Ga substituted yttrium iron garnet films
J. Appl. Phys. 60, 3656–3660 (1986)
https://doi.org/10.1063/1.337572
Magnetization distribution analysis in the film edge region under a homogeneous field
J. Appl. Phys. 60, 3661–3670 (1986)
https://doi.org/10.1063/1.337573
Magnetic anisotropies and spin reorientations of R2Fe14B‐type compounds
J. Appl. Phys. 60, 3671–3679 (1986)
https://doi.org/10.1063/1.337574
Competing anisotropies and first‐order magnetization processes in (Zn,Co)W‐type hexaferrite
J. Appl. Phys. 60, 3680–3684 (1986)
https://doi.org/10.1063/1.337575
Magnetization process in rapidly solidified neodymium‐iron‐boron permanent magnet materials
J. Appl. Phys. 60, 3685–3690 (1986)
https://doi.org/10.1063/1.337576
Anisotropy dispersion and its influence on magneto‐optical effect in rare‐earth transition‐metal amorphous films
J. Appl. Phys. 60, 3691–3695 (1986)
https://doi.org/10.1063/1.337577
Single and coupled double‐well GaAs/AlGaAs and energy‐dependent light‐hole mass
J. Appl. Phys. 60, 3696–3698 (1986)
https://doi.org/10.1063/1.337578
Luminescence study of rapid thermal annealing of ion implantation damage in cadmium telluride
J. Appl. Phys. 60, 3699–3710 (1986)
https://doi.org/10.1063/1.337579
Electrocathodoluminescence in insulator‐bridged vacuum gaps under high‐voltage stress
J. Appl. Phys. 60, 3711–3719 (1986)
https://doi.org/10.1063/1.337580
Acousto‐optic interaction efficiency in Ti:LiNbO3 waveguide collinear Bragg diffraction cell
J. Appl. Phys. 60, 3720–3723 (1986)
https://doi.org/10.1063/1.337581
Spectroscopic ellipsometry study of glow‐discharge‐deposited thin films of a‐Ge:H
J. Appl. Phys. 60, 3724–3731 (1986)
https://doi.org/10.1063/1.337582
Photoluminescence studies of defects and impurities in annealed GaAs
J. Appl. Phys. 60, 3735–3745 (1986)
https://doi.org/10.1063/1.337584
A time‐of‐flight study of the neutral species produced by nanosecond laser etching of CuCl at 308 nm
J. Appl. Phys. 60, 3746–3749 (1986)
https://doi.org/10.1063/1.337585
Reaction chemistry at the Si (100) surface—control through active‐site manipulation
J. Appl. Phys. 60, 3750–3754 (1986)
https://doi.org/10.1063/1.337586
Photoresponse of asymmetrically doped GaAs‐AlAs heterostructures under external bias
J. Appl. Phys. 60, 3755–3758 (1986)
https://doi.org/10.1063/1.337587
Studies of stress compensated quartz resonators with ultralinear frequency‐temperature responses
J. Appl. Phys. 60, 3765–3771 (1986)
https://doi.org/10.1063/1.337589
New ultrafast switching mechanism in semiconductor heterostructures
J. Appl. Phys. 60, 3775–3777 (1986)
https://doi.org/10.1063/1.337540
A method to eliminate wetting during the homogenization of HgCdTe
J. Appl. Phys. 60, 3777–3779 (1986)
https://doi.org/10.1063/1.337541
A new analytical technique of photoluminescence for optimization of organometallic chemical vapor deposition
J. Appl. Phys. 60, 3781–3784 (1986)
https://doi.org/10.1063/1.337543
A novel fabrication technique for a quasicoplanar super‐Schottky diode on GaAs
J. Appl. Phys. 60, 3784–3786 (1986)
https://doi.org/10.1063/1.337544
Performance characteristics of the ArF excimer laser using a low‐pressure argon‐rich mixture
J. Appl. Phys. 60, 3791–3793 (1986)
https://doi.org/10.1063/1.337547
A step-by-step guide to perform x-ray photoelectron spectroscopy
Grzegorz Greczynski, Lars Hultman
Scaling effects on the microstructure and thermomechanical response of through silicon vias (TSVs)
Shuhang Lyu, Thomas Beechem, et al.