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Direct writing in self‐developing resists using low‐power cw ultraviolet light
J. Appl. Phys. 58, 2098–2101 (1985)
https://doi.org/10.1063/1.335973
Parametric distortion of the optical absorption edge of a magnetic semiconductor by a strong laser field
J. Appl. Phys. 58, 2102–2104 (1985)
https://doi.org/10.1063/1.335974
Complex acoustic and electromagnetic resonance frequencies of prolate spheroids and related elongated objects and their physical interpretation
H. Überall; P. J. Moser; Barbara L. Merchant; A. Nagl; K. B. Yoo; S. H. Brown; J. W. Dickey; J. M. D’Archangelo
J. Appl. Phys. 58, 2109–2124 (1985)
https://doi.org/10.1063/1.335976
Optimal paths for thermodynamic systems: The ideal diesel cycle
J. Appl. Phys. 58, 2125–2134 (1985)
https://doi.org/10.1063/1.335977
UV laser incorporation of dopants into silicon: Comparison of two processes
J. Appl. Phys. 58, 2167–2173 (1985)
https://doi.org/10.1063/1.335982
Determination of the rotational viscosity from the director pattern relaxation in twisted nematic cells
J. Appl. Phys. 58, 2180–2183 (1985)
https://doi.org/10.1063/1.335984
Integral representation of the diffracted intensity from one‐dimensional stepped surfaces and epitaxial layers
J. Appl. Phys. 58, 2184–2189 (1985)
https://doi.org/10.1063/1.335985
Wavelength modulation absorption spectroscopy of deep levels in semi‐insulating GaAs
J. Appl. Phys. 58, 2217–2224 (1985)
https://doi.org/10.1063/1.336302
Comparative study of time‐resolved conductivity measurements in hydrogenated amorphous silicon
J. Appl. Phys. 58, 2236–2241 (1985)
https://doi.org/10.1063/1.335940
Observation of adsorbate‐induced surface states by elastic electron tunneling spectroscopy
J. Appl. Phys. 58, 2266–2269 (1985)
https://doi.org/10.1063/1.335944
Two‐dimensional balance equations in nonlinear electronic transport and application to GaAs‐GaAlAs heterojunctions
J. Appl. Phys. 58, 2270–2279 (1985)
https://doi.org/10.1063/1.335945
Improvement of critical current uniformity in lead‐alloy Josephson junctions
J. Appl. Phys. 58, 2280–2284 (1985)
https://doi.org/10.1063/1.335946
Elastic, piezoelectric, and dielectric properties of the BaLaGa3O7 crystal
J. Appl. Phys. 58, 2285–2287 (1985)
https://doi.org/10.1063/1.335947
A model for low‐temperature luminescence in lithium‐ and sodium‐doped beryllium oxide single crystals
J. Appl. Phys. 58, 2302–2307 (1985)
https://doi.org/10.1063/1.335950
Preparation effects on the UV optical properties of GeO2 glasses
J. Appl. Phys. 58, 2308–2311 (1985)
https://doi.org/10.1063/1.335951
Charge and energy transfer in collisions of Cs+ ions with a cesiated W(110) surface
J. Appl. Phys. 58, 2312–2316 (1985)
https://doi.org/10.1063/1.335952
A model for the stationary cesium coverage on a converter surface in a cesium seeded hydrogen discharge
J. Appl. Phys. 58, 2317–2325 (1985)
https://doi.org/10.1063/1.335953
Growth, characterization, and optical spectroscopy of Al2O3:Ti3+
J. Appl. Phys. 58, 2331–2336 (1985)
https://doi.org/10.1063/1.335955
Computer modeling study of the effects of inhomogeneous doping and/or composition in GaAs solar‐cell devices
J. Appl. Phys. 58, 2344–2351 (1985)
https://doi.org/10.1063/1.335957
Numerical analysis of amorphous silicon solar cells: A detailed investigation of the effects of internal field distribution on cell characteristics
Tetsuro Ikegaki; Haruo Itoh; Sin’ichi Muramatsu; Sunao Matsubara; Nobuo Nakamura; Toshikazu Shimada; Jun’ichi Umeda; Masanobu Migitaka
J. Appl. Phys. 58, 2352–2359 (1985)
https://doi.org/10.1063/1.335958
Josephson 4 K‐bit cache memory design for a prototype signal processor. I. General overview
J. Appl. Phys. 58, 2371–2378 (1985)
https://doi.org/10.1063/1.335960
Josephson 4 K‐bit cache memory design for a prototype signal processor. II. Cell array and drivers
J. Appl. Phys. 58, 2379–2388 (1985)
https://doi.org/10.1063/1.335961
Josephson 4 K‐bit cache memory design for a prototype signal processor. III. Decoding, sensing, and timing
J. Appl. Phys. 58, 2389–2399 (1985)
https://doi.org/10.1063/1.336303
Current oscillation in modulation‐doped GaInAs/n‐GaAs strained‐layer superlattices
J. Appl. Phys. 58, 2402–2403 (1985)
https://doi.org/10.1063/1.335936
Growth of crystalline zirconium dioxide films on silicon
J. Appl. Phys. 58, 2407–2409 (1985)
https://doi.org/10.1063/1.335912
Boron‐doping effects on the electrical properties of high‐deposition rate amorphous silicon
J. Appl. Phys. 58, 2413–2415 (1985)
https://doi.org/10.1063/1.335914
Low‐temperature direct nitridation of silicon in nitrogen plasma generated by microwave discharge
J. Appl. Phys. 58, 2416–2419 (1985)
https://doi.org/10.1063/1.335915
Re-examination of important defect complexes in silicon: From microelectronics to quantum computing
P. P. Filippatos, A. Chroneos, et al.
Tutorial: Simulating modern magnetic material systems in mumax3
Jonas J. Joos, Pedram Bassirian, et al.
Piezoelectric thin films and their applications in MEMS: A review
Jinpeng Liu, Hua Tan, et al.