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An electromagnetic microscopic positioning device for the scanning tunneling microscope
J. Appl. Phys. 58, 3947–3953 (1985)
https://doi.org/10.1063/1.335568
Density sensitive x‐ray line ratios in the Be i, B i, and Ne i isoelectronic sequences
J. Appl. Phys. 58, 3954–3958 (1985)
https://doi.org/10.1063/1.335569
Laser optoacoustic measurement of homogeneous linewidth and pump saturation intensity in a CH3I molecule
J. Appl. Phys. 58, 3959–3962 (1985)
https://doi.org/10.1063/1.335570
Surface‐wave propagation along the boundary between sea water and one‐dimensionally anisotropic rock
J. Appl. Phys. 58, 3963–3974 (1985)
https://doi.org/10.1063/1.335571
Experimental observation of unstable resonator mode evolution in a high‐power KrF laser
J. Appl. Phys. 58, 3987–3990 (1985)
https://doi.org/10.1063/1.335574
Improved performance of a closed‐cycle self‐sustained discharge‐excited cw CO laser
J. Appl. Phys. 58, 3991–3995 (1985)
https://doi.org/10.1063/1.335575
Effect of UV laser preionization on CO2‐laser‐induced optical breakdown
J. Appl. Phys. 58, 4003–4005 (1985)
https://doi.org/10.1063/1.335577
Second harmonic generation of p‐polarized laser radiation in an inhomogeneous laser‐produced plasma
J. Appl. Phys. 58, 4006–4010 (1985)
https://doi.org/10.1063/1.335578
Electron temperature and average density in spherical laser‐produced plasmas: Ultraviolet plasma spectroscopy
J. Appl. Phys. 58, 4011–4014 (1985)
https://doi.org/10.1063/1.336288
Analysis of polycrystalline silicon diffusion sources by secondary ion mass spectrometry
J. Appl. Phys. 58, 4036–4042 (1985)
https://doi.org/10.1063/1.335582
Lattice parameters of Zn1−xMnxSe and tetrahedral bond lengths in AII1−xMnxBVI alloys
J. Appl. Phys. 58, 4056–4060 (1985)
https://doi.org/10.1063/1.335585
Characterization of microvoids in carbon fibers by absolute small‐angle x‐ray measurements on a fiber bundle
J. Appl. Phys. 58, 4074–4082 (1985)
https://doi.org/10.1063/1.335588
Substrate‐dependent electrical properties of low‐dose Si implants in GaAs
J. Appl. Phys. 58, 4083–4088 (1985)
https://doi.org/10.1063/1.335589
Transmission electron microscopy investigation of laser‐induced defects in (Al, Ga) As
J. Appl. Phys. 58, 4089–4094 (1985)
https://doi.org/10.1063/1.335538
Static and computer‐simulated dynamic model approaches to effective elastic properties of noncubic polycrystals
J. Appl. Phys. 58, 4095–4101 (1985)
https://doi.org/10.1063/1.335539
Anomalous redistribution of beryllium in GaAs grown by molecular beam epitaxy
J. Appl. Phys. 58, 4130–4134 (1985)
https://doi.org/10.1063/1.335543
Effect of a conductive layer on copper electromigration in the CuxS/CdS photovoltaic system
J. Appl. Phys. 58, 4135–4141 (1985)
https://doi.org/10.1063/1.335544
Characteristics of TiO2 films deposited by a reactive ionized cluster beam
J. Appl. Phys. 58, 4146–4149 (1985)
https://doi.org/10.1063/1.335546
Effects of substrate crystallinity and dopant on the growth kinetics of platinum silicides
J. Appl. Phys. 58, 4165–4171 (1985)
https://doi.org/10.1063/1.335548
A comparison between thermal annealing and ion mixing of alloyed Ni‐W films on Si. I
J. Appl. Phys. 58, 4172–4177 (1985)
https://doi.org/10.1063/1.335549
A comparison between thermal annealing and ion mixing of multilayered Ni‐W films on Si. II
J. Appl. Phys. 58, 4178–4185 (1985)
https://doi.org/10.1063/1.335550
Growth and characterization of GaAs/Ge epilayers grown on Si substrates by molecular beam epitaxy
J. Appl. Phys. 58, 4186–4193 (1985)
https://doi.org/10.1063/1.335551
Analysis of stress in chemical vapor deposition tungsten silicide film
J. Appl. Phys. 58, 4194–4199 (1985)
https://doi.org/10.1063/1.335552
Characterizations of palladium silicides formed by rapid thermal annealing
J. Appl. Phys. 58, 4200–4206 (1985)
https://doi.org/10.1063/1.335553
The acceptor level of vanadium in III–V compounds
B. Clerjaud; C. Naud; B. Deveaud; B. Lambert; B. Plot; G. Bremond; C. Benjeddou; G. Guillot; A. Nouailhat
J. Appl. Phys. 58, 4207–4215 (1985)
https://doi.org/10.1063/1.336287
Nature and distribution of electrically active defects in Si‐implanted and lamp‐annealed GaAs
J. Appl. Phys. 58, 4216–4220 (1985)
https://doi.org/10.1063/1.335554
Time‐of‐flight study of chalcogenide glasses chemically modified by bismuth
J. Appl. Phys. 58, 4225–4229 (1985)
https://doi.org/10.1063/1.335556
Investigation of surface mobility in thin‐gate oxide metal‐oxide‐semiconductor field‐effect transistors
J. Appl. Phys. 58, 4245–4250 (1985)
https://doi.org/10.1063/1.335559
The role of surface in sputtered amorphous silicon: An oxidation study
J. Appl. Phys. 58, 4251–4255 (1985)
https://doi.org/10.1063/1.335560
Determination of silicon‐silicon dioxide interface state properties from admittance measurements under illumination
J. Appl. Phys. 58, 4256–4266 (1985)
https://doi.org/10.1063/1.335561
Calculation of surface generation and recombination velocities at the Si‐SiO2 interface
J. Appl. Phys. 58, 4267–4276 (1985)
https://doi.org/10.1063/1.335562
Ar ion beam and CCl4 reactive ion etching: A comparison of etching damage and of damage passivation by hydrogen
J. Appl. Phys. 58, 4282–4291 (1985)
https://doi.org/10.1063/1.335513
Effects of heat treatment on the composition and semiconductivity of electrochemically deposited CdTe films
J. Appl. Phys. 58, 4292–4295 (1985)
https://doi.org/10.1063/1.335514
Charge transport and trapping in silicon nitride‐silicon dioxide dielectric double layers
J. Appl. Phys. 58, 4300–4306 (1985)
https://doi.org/10.1063/1.336285
Optical studies of impurity trapping at the GaAlAs/GaAs interface in quantum well structures
J. Appl. Phys. 58, 4307–4312 (1985)
https://doi.org/10.1063/1.335516
Liquid‐phase epitaxial growth and characterization of low carrier concentration n‐ and p‐type In0.53Ga0.47As
J. Appl. Phys. 58, 4313–4316 (1985)
https://doi.org/10.1063/1.335517
Tellurium and zinc doping in In0.5Ga0.5P grown by liquid‐phase epitaxy
J. Appl. Phys. 58, 4317–4321 (1985)
https://doi.org/10.1063/1.335518
Experimental evidence of a multiphase magnetic system in fine particles of ferric hydroxysulfate
J. Appl. Phys. 58, 4336–4341 (1985)
https://doi.org/10.1063/1.335521
Raman study of GaAs‐InxAl1−x As strained‐layer superlattices
J. Appl. Phys. 58, 4342–4345 (1985)
https://doi.org/10.1063/1.335522
Optical and electronic properties of the electron beam resist poly(butene‐1‐sulfone)
J. Appl. Phys. 58, 4360–4364 (1985)
https://doi.org/10.1063/1.335525
A model for pulsed laser melting of graphite
J. Appl. Phys. 58, 4374–4382 (1985)
https://doi.org/10.1063/1.335527
Hole transport equation analysis of photoelectrochemical etching resolution
J. Appl. Phys. 58, 4390–4396 (1985)
https://doi.org/10.1063/1.335529
UV‐laser photolysis of trimethylaluminum for Al film growth
J. Appl. Phys. 58, 4397–4401 (1985)
https://doi.org/10.1063/1.335530
An extremely sensitive heterostructure for parts per million detection of hydrogen in oxygen
J. Appl. Phys. 58, 4415–4419 (1985)
https://doi.org/10.1063/1.335532
Low‐temperature characteristics of electron ionization rates in (100)‐ and (111)‐oriented InP
J. Appl. Phys. 58, 4426–4430 (1985)
https://doi.org/10.1063/1.335534
Charge control and geometric magnetoresistance of a gated AlGaAs/GaAs heterojunction transistor
J. Appl. Phys. 58, 4431–4437 (1985)
https://doi.org/10.1063/1.335535
Field‐dependent grain boundary barriers as a cause of carrier drift velocity saturation in organic solids
J. Appl. Phys. 58, 4440–4441 (1985)
https://doi.org/10.1063/1.335537
Improvements in stoichiometry and stability of p‐CuxS in thin‐film CdS solar cells
J. Appl. Phys. 58, 4442–4445 (1985)
https://doi.org/10.1063/1.336274
Morphological and electrical analysis of micron scale Si lines produced by laser‐induced chemical vapor deposition
J. Appl. Phys. 58, 4446–4448 (1985)
https://doi.org/10.1063/1.336275
Comparison of magnetostatic surface wave propagation characteristics at 77 and 299 K
J. Appl. Phys. 58, 4449–4451 (1985)
https://doi.org/10.1063/1.336276
High‐purity AlGaAs grown by molecular beam epitaxy using a superlattice buffer layer
J. Appl. Phys. 58, 4452–4454 (1985)
https://doi.org/10.1063/1.336277
Al(Ge) metallization: The effect of Ge on the solubility of Si in Al
J. Appl. Phys. 58, 4459–4462 (1985)
https://doi.org/10.1063/1.336254
Discharge‐pumped gold‐vapor laser operating in a low‐temperature range using chloroauric acid as a lasant
J. Appl. Phys. 58, 4468–4469 (1985)
https://doi.org/10.1063/1.336257
Face‐centered‐cubic Nb‐Si solid solutions produced by picosecond pulsed laser quenching
J. Appl. Phys. 58, 4477–4479 (1985)
https://doi.org/10.1063/1.336260
High‐power single longitudinal mode operation of inverted channel substrate planar lasers
J. Appl. Phys. 58, 4480–4482 (1985)
https://doi.org/10.1063/1.336261
Re-examination of important defect complexes in silicon: From microelectronics to quantum computing
P. P. Filippatos, A. Chroneos, et al.
Tutorial: Simulating modern magnetic material systems in mumax3
Jonas J. Joos, Pedram Bassirian, et al.
Piezoelectric thin films and their applications in MEMS: A review
Jinpeng Liu, Hua Tan, et al.