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Laser microspeckle technique in displacement measurement near a crack tip
J. Appl. Phys. 54, 1651–1655 (1983)
https://doi.org/10.1063/1.332822
Intense relativistic electron beam injector system for tokamak current drive
J. Appl. Phys. 54, 1656–1665 (1983)
https://doi.org/10.1063/1.332823
Theoretical simulation of a pulsed HF optical resonance transfer laser
J. Appl. Phys. 54, 1675–1685 (1983)
https://doi.org/10.1063/1.332826
Temperature dependence of the resonant frequency of electroded contoured AT‐cut quartz crystal resonators
J. Appl. Phys. 54, 1704–1716 (1983)
https://doi.org/10.1063/1.332221
Optically recording interferometer for velocity measurements with subnanosecond resolution
J. Appl. Phys. 54, 1717–1722 (1983)
https://doi.org/10.1063/1.332222
Electron drift velocities in gas mixtures of He, N2, and CO2
J. Appl. Phys. 54, 1723–1724 (1983)
https://doi.org/10.1063/1.332223
Degradation of poly(methyl methacrylate) in CF4 and CF4/O2 plasmas
J. Appl. Phys. 54, 1725–1729 (1983)
https://doi.org/10.1063/1.332224
Behavior of Cs+‐UF−6 ion‐pair plasmas in radiofrequency quadrupole‐dipole fields. I. Experiment
J. Appl. Phys. 54, 1730–1754 (1983)
https://doi.org/10.1063/1.332225
Behavior of Cs+‐UF−6 ion‐pair plasmas in radiofrequency quadrupole‐dipole fields. II. Theory
J. Appl. Phys. 54, 1755–1780 (1983)
https://doi.org/10.1063/1.332226
Limitation to the accuracy of interferometrically measured electron density profiles of laser‐produced plasmas
J. Appl. Phys. 54, 1787–1791 (1983)
https://doi.org/10.1063/1.332228
Effect of ion‐beam damage on x‐ray diffraction and Raman spectra of amorphous GeSe2
J. Appl. Phys. 54, 1792–1794 (1983)
https://doi.org/10.1063/1.332229
How well does 4He backscattering from low‐Z nuclei obey the Rutherford formula?
J. Appl. Phys. 54, 1800–1803 (1983)
https://doi.org/10.1063/1.332813
Study of ion‐implantation damage in GaAs:Be and InP:Be using Raman scattering
J. Appl. Phys. 54, 1808–1815 (1983)
https://doi.org/10.1063/1.332815
Yield point and dislocation mobility in silicon and germanium
J. Appl. Phys. 54, 1816–1820 (1983)
https://doi.org/10.1063/1.332816
Thermal generation of confocal domains in a smectic A liquid crystal
J. Appl. Phys. 54, 1827–1832 (1983)
https://doi.org/10.1063/1.332818
Heterogeneous bubble nucleation and conditions for growth in a liquid–gas system of constant mass and volume
J. Appl. Phys. 54, 1833–1843 (1983)
https://doi.org/10.1063/1.332819
Interface effects in the formation of silicon oxide on metal silicide layers over silicon substrates
J. Appl. Phys. 54, 1849–1854 (1983)
https://doi.org/10.1063/1.332821
Interface states induced in silicon by tungsten as a result of reactive ion beam etching
J. Appl. Phys. 54, 1855–1859 (1983)
https://doi.org/10.1063/1.332236
Thickness of GaP liquid phase epitaxial layers grown by step‐cooling, equilibrium‐cooling, and ramp‐cooling methods
J. Appl. Phys. 54, 1865–1867 (1983)
https://doi.org/10.1063/1.332238
Effect of arsenic dimer/tetramer ratio on stability of III–V compound surfaces grown by molecular beam epitaxy
J. Appl. Phys. 54, 1868–1871 (1983)
https://doi.org/10.1063/1.332239
Determination of band‐gap parameters of Hg1−xCdxTe based on high‐temperature carrier concentration
J. Appl. Phys. 54, 1883–1886 (1983)
https://doi.org/10.1063/1.332241
Theory of silicon superlattices: Electronic structure and enhanced mobility
J. Appl. Phys. 54, 1892–1902 (1983)
https://doi.org/10.1063/1.332243
A model of conduction in inhomogeneous degenerate semiconductors: Application to silicon‐on‐sapphire films
J. Appl. Phys. 54, 1903–1908 (1983)
https://doi.org/10.1063/1.332244
Carrier capture by multiphonon emission at extrinsic deep centers induced by self‐trapping in GaAs
J. Appl. Phys. 54, 1909–1923 (1983)
https://doi.org/10.1063/1.332245
Trapping center parameters in indium selenide single crystals by thermally stimulated current measurements
J. Appl. Phys. 54, 1924–1929 (1983)
https://doi.org/10.1063/1.332246
Effect of composition on the structure and electrical properties of As‐Se‐Cu glasses
J. Appl. Phys. 54, 1950–1954 (1983)
https://doi.org/10.1063/1.332249
Effects of interface‐potential nonuniformities on carrier transport across silicon grain boundaries
J. Appl. Phys. 54, 1976–1980 (1983)
https://doi.org/10.1063/1.332210
Carrier transport in stripe‐geometry Ga1−xAlxAs double heterostructure diode lasers and broad area heterojunctions
J. Appl. Phys. 54, 1981–1987 (1983)
https://doi.org/10.1063/1.332211
Amorphous to crystalline transformation of Fe81B13.5Si3.5C2
J. Appl. Phys. 54, 2019–2024 (1983)
https://doi.org/10.1063/1.332216
Energy band‐gap shift with elastic strain in GaxIn1−xP epitaxial layers on (001) GaAs substrates
J. Appl. Phys. 54, 2052–2056 (1983)
https://doi.org/10.1063/1.332252
Analysis of thermal stresses induced in silicon during xenon arc lamp flash annealing
J. Appl. Phys. 54, 2057–2062 (1983)
https://doi.org/10.1063/1.332253
Deposition and properties of zinc phosphide films
J. Appl. Phys. 54, 2063–2068 (1983)
https://doi.org/10.1063/1.332254
Effect of phosphorus doping on stress in silicon and polycrystalline silicon
J. Appl. Phys. 54, 2069–2072 (1983)
https://doi.org/10.1063/1.332255
An x‐ray diffraction study of lattice imperfection in cold‐worked FCC alloys. IV. Copper‐germanium (alpha‐phase)
J. Appl. Phys. 54, 2073–2078 (1983)
https://doi.org/10.1063/1.332256
Photovoltage decay in p‐n junction solar cells including the effects of recombinations in the emitter
J. Appl. Phys. 54, 2079–2085 (1983)
https://doi.org/10.1063/1.332257
Electron density of the two‐dimensional electron gas in modulation doped layers
J. Appl. Phys. 54, 2093–2096 (1983)
https://doi.org/10.1063/1.332259
On the point and line defects which are common to both degraded light emitting diodes and plastically deformed GaAs
J. Appl. Phys. 54, 2097–2102 (1983)
https://doi.org/10.1063/1.332260
Boron diffusion during electron pulse annealing of silicon
J. Appl. Phys. 54, 2111–2113 (1983)
https://doi.org/10.1063/1.332264
Effect of Al electrodes on dc and ac current‐voltage characteristics of chalcogenide glass films
J. Appl. Phys. 54, 2119–2120 (1983)
https://doi.org/10.1063/1.332230
Enhancement of permeability in ferrite toroids subjected to rotating magnetic fields
J. Appl. Phys. 54, 2121–2122 (1983)
https://doi.org/10.1063/1.332231
Rutherford backscattering evidence for solid phase laser annealing of Corning 7059 glass and ZnO thin films
J. Appl. Phys. 54, 2125–2126 (1983)
https://doi.org/10.1063/1.332233
Re-examination of important defect complexes in silicon: From microelectronics to quantum computing
P. P. Filippatos, A. Chroneos, et al.
Tutorial: Simulating modern magnetic material systems in mumax3
Jonas J. Joos, Pedram Bassirian, et al.
Piezoelectric thin films and their applications in MEMS: A review
Jinpeng Liu, Hua Tan, et al.