Skip Nav Destination
Issues
Differential laser Doppler interferometry for high surface velocity measurement
J. Appl. Phys. 54, 6086–6093 (1983)
https://doi.org/10.1063/1.331944
X‐ray spectral line coincidences between fluorine K‐ and transition‐metal L‐series lines
J. Appl. Phys. 54, 6138–6149 (1983)
https://doi.org/10.1063/1.331949
Velocity diagnostics of mildly relativistic, high current electron beams
J. Appl. Phys. 54, 6154–6159 (1983)
https://doi.org/10.1063/1.331929
Studies of the effects of a long pulse electron beam on the autoaccelerator
J. Appl. Phys. 54, 6160–6174 (1983)
https://doi.org/10.1063/1.331930
Stimulated emission in strained‐layer quantum‐well heterostructures
M. D. Camras; J. M. Brown; N. Holonyak, Jr.; M. A. Nixon; R. W. Kaliski; M. J. Ludowise; W. T. Dietze; C. R. Lewis
J. Appl. Phys. 54, 6183–6189 (1983)
https://doi.org/10.1063/1.331932
First‐order model of the change with refractive index of the frequency of semiconductor lasers
J. Appl. Phys. 54, 6190–6192 (1983)
https://doi.org/10.1063/1.331933
Photodynamics and stability of laser active (F+2)A centers
J. Appl. Phys. 54, 6193–6198 (1983)
https://doi.org/10.1063/1.331934
Performance of an array of plasma pinches as a new optical pumping source for dye lasers
J. Appl. Phys. 54, 6199–6212 (1983)
https://doi.org/10.1063/1.331935
Second harmonic generation with surface guided waves in signal processing geometries
J. Appl. Phys. 54, 6213–6217 (1983)
https://doi.org/10.1063/1.331936
Characterization of proton‐exchange slab optical waveguides in z‐cut LiNbO3
J. Appl. Phys. 54, 6218–6220 (1983)
https://doi.org/10.1063/1.331937
Quantitative study of the aberrations for focused acoustic plane waves obliquely incident upon a plane interface
J. Appl. Phys. 54, 6232–6239 (1983)
https://doi.org/10.1063/1.331940
Thermal wave imaging of closed cracks in opaque solids
J. Appl. Phys. 54, 6245–6255 (1983)
https://doi.org/10.1063/1.331942
Stress measurements using piezoresistance gauges: Modeling the gauge as an elastic‐plastic inclusion
J. Appl. Phys. 54, 6256–6266 (1983)
https://doi.org/10.1063/1.331951
Technique for estimating space‐charge densities in systems containing air ions
J. Appl. Phys. 54, 6267–6273 (1983)
https://doi.org/10.1063/1.331952
Nonlinear Bernstein–Greene–Kruskal wave equilibria subject to global energy and momentum conservation constraints
J. Appl. Phys. 54, 6284–6291 (1983)
https://doi.org/10.1063/1.331954
An absolutely timed x‐ray streak camera for laser fusion experiments
J. Appl. Phys. 54, 6302–6306 (1983)
https://doi.org/10.1063/1.331902
Electron backscatter and impedance in one‐dimensional space‐charge limited diodes
J. Appl. Phys. 54, 6307–6310 (1983)
https://doi.org/10.1063/1.331903
Monte Carlo simulation of the motion of electrons in SF6 in uniform electric fields
J. Appl. Phys. 54, 6311–6316 (1983)
https://doi.org/10.1063/1.331904
An x‐ray diffraction study on the microstructure of Ag–Cd–In (α‐phase) alloys
J. Appl. Phys. 54, 6317–6320 (1983)
https://doi.org/10.1063/1.331905
Point defects in crystalline SiO2: Thermally stimulated luminescence above room temperature
J. Appl. Phys. 54, 6321–6328 (1983)
https://doi.org/10.1063/1.331906
Dual ion implantation technique for formation of shallow p+/n junctions in silicon
J. Appl. Phys. 54, 6336–6339 (1983)
https://doi.org/10.1063/1.331908
Quantification of dopant implants in oxidized silicon on sapphire using secondary‐ion mass spectrometry
J. Appl. Phys. 54, 6340–6345 (1983)
https://doi.org/10.1063/1.331909
Time dependence and diffraction efficiency of optically‐induced phase gratings in nematic liquid crystal films
J. Appl. Phys. 54, 6368–6373 (1983)
https://doi.org/10.1063/1.331912
Studies of the spectral and spatial characteristics of shock‐induced luminescence from x‐cut quartz
J. Appl. Phys. 54, 6374–6381 (1983)
https://doi.org/10.1063/1.331913
Disorder of an InxGa1−xAs‐GaAs superlattice by Zn diffusion
J. Appl. Phys. 54, 6382–6384 (1983)
https://doi.org/10.1063/1.331914
Epitaxial growth of Si–Ge layers on Si substrates by plasma dissociation of SiH4 and GeH4 mixture
J. Appl. Phys. 54, 6385–6389 (1983)
https://doi.org/10.1063/1.331915
The physical properties of CdS thin films electrodeposited from aqueous diethylene glycol solutions
J. Appl. Phys. 54, 6390–6394 (1983)
https://doi.org/10.1063/1.331916
Space‐charge‐limited currents: Refinements in analysis and applications to a‐Si1−xGex:H alloys
J. Appl. Phys. 54, 6401–6416 (1983)
https://doi.org/10.1063/1.331918
Boundary limited nuclear spin relaxation of 3He liquid and vapor in high magnetic field
J. Appl. Phys. 54, 6421–6424 (1983)
https://doi.org/10.1063/1.331920
Low field mobility of 2‐d electron gas in modulation doped AlxGa1−xAs/GaAs layers
J. Appl. Phys. 54, 6432–6438 (1983)
https://doi.org/10.1063/1.331922
Variation of the midgap electron traps (EL2) in liquid encapsulated Czochralski GaAs
J. Appl. Phys. 54, 6448–6451 (1983)
https://doi.org/10.1063/1.331925
Transport processes at grain boundaries in polycrystalline material under optical illumination
J. Appl. Phys. 54, 6452–6458 (1983)
https://doi.org/10.1063/1.331926
Hot carrier injection of photogenerated electrons at indium phosphide–electrolyte interfaces
J. Appl. Phys. 54, 6463–6473 (1983)
https://doi.org/10.1063/1.331928
A study of interface states in metal‐GaAs 〈110〉 structures by Schottky capacitance spectroscopy
J. Appl. Phys. 54, 6474–6480 (1983)
https://doi.org/10.1063/1.331875
Surface photovoltage measured capacitance: Application to semiconductor/electrolyte system
J. Appl. Phys. 54, 6481–6487 (1983)
https://doi.org/10.1063/1.331876
Current transport in semiconductor‐electrolyte barriers: Surface recombination and photovoltaic applications
J. Appl. Phys. 54, 6488–6491 (1983)
https://doi.org/10.1063/1.331877
Experimental comparison of atomic roughness and Hall mobility in p‐Si inversion layers
J. Appl. Phys. 54, 6492–6496 (1983)
https://doi.org/10.1063/1.331878
Electrical properties of amorphous tantalum pentoxide thin films on silicon
J. Appl. Phys. 54, 6502–6508 (1983)
https://doi.org/10.1063/1.331880
Properties of NbN thin films deposited on ambient temperature substrates
D. D. Bacon; A. T. English; S. Nakahara; F. G. Peters; H. Schreiber; W. R. Sinclair; R. B. van Dover
J. Appl. Phys. 54, 6509–6516 (1983)
https://doi.org/10.1063/1.331881
Low temperature laser quenching studies of superconducting Mo–N and Mo–C alloys
J. Appl. Phys. 54, 6517–6521 (1983)
https://doi.org/10.1063/1.331882
Long and narrow Josephson tunnel junctions of mixed overlap and inline character
J. Appl. Phys. 54, 6522–6525 (1983)
https://doi.org/10.1063/1.331883
Thermal activation from the fluxoid and the voltage states of dc SQUIDs
J. Appl. Phys. 54, 6533–6542 (1983)
https://doi.org/10.1063/1.331885
Interface flux pinning in in situ formed superconducting composites
J. Appl. Phys. 54, 6543–6548 (1983)
https://doi.org/10.1063/1.331886
Effect of twist on wires made from in situ superconductors
J. Appl. Phys. 54, 6549–6552 (1983)
https://doi.org/10.1063/1.331887
Magnetostriction and magnetic core loss at high frequency in amorphous Fe‐Nb‐Si‐B alloys
J. Appl. Phys. 54, 6553–6557 (1983)
https://doi.org/10.1063/1.331888
Some effects of elastic stresses and demagnetizing fields on nickel samples
J. Appl. Phys. 54, 6558–6562 (1983)
https://doi.org/10.1063/1.331889
Low‐field viscomagnetic behavior of annealed, quenched, and cold‐worked polycrystalline nickel
J. Appl. Phys. 54, 6563–6567 (1983)
https://doi.org/10.1063/1.331890
Corner clusters in thin soft magnetic layers. III. Conversions in corner clusters
J. Appl. Phys. 54, 6568–6576 (1983)
https://doi.org/10.1063/1.331891
Domain‐wall dynamics in garnet films with orthorhombic anisotropy
J. Appl. Phys. 54, 6577–6583 (1983)
https://doi.org/10.1063/1.331892
Piezomagnetic and elastic properties of metallic glass alloys Fe67CO18B14Si1 and Fe81B13.5Si3.5C2
J. Appl. Phys. 54, 6584–6593 (1983)
https://doi.org/10.1063/1.331893
Electron spin resonance study of oxygen donors in silicon crystals
J. Appl. Phys. 54, 6594–6600 (1983)
https://doi.org/10.1063/1.331894
rf planar magnetron sputtering and characterization of ferroelectric Pb(Zr,Ti)O3 films
J. Appl. Phys. 54, 6601–6609 (1983)
https://doi.org/10.1063/1.331895
Calculation of potential distribution in homogeneous anisotropic nonlinear dielectrics
J. Appl. Phys. 54, 6610–6614 (1983)
https://doi.org/10.1063/1.331896
Study of thermally induced active birefringence in Nd:glass laser rods
J. Appl. Phys. 54, 6615–6619 (1983)
https://doi.org/10.1063/1.331897
Internal strain and photoelastic effects in Ga1−xAlxAs/GaAs and In1−xGaxAsyP1−y/InP crystals
J. Appl. Phys. 54, 6620–6627 (1983)
https://doi.org/10.1063/1.331898
Photoinduced metastable surface effects in boron‐doped hydrogenated amorphous silicon films
J. Appl. Phys. 54, 6628–6633 (1983)
https://doi.org/10.1063/1.331899
Measurements on ablative hole formation process in thin tellurium‐selenium alloy films
J. Appl. Phys. 54, 6637–6640 (1983)
https://doi.org/10.1063/1.331901
Anomalous temperature dependence of thermoelectric power of PbTe thin films
J. Appl. Phys. 54, 6641–6645 (1983)
https://doi.org/10.1063/1.331849
Inhibiting effect of thermal oxides on the growth of rf‐plasma oxides for Pb‐alloy Josephson junctions
J. Appl. Phys. 54, 6658–6662 (1983)
https://doi.org/10.1063/1.331852
Oxidation induced stresses and some effects on the behavior of oxide films
J. Appl. Phys. 54, 6672–6686 (1983)
https://doi.org/10.1063/1.331854
Calculations on the role of carbon monoxide in tungsten–halogen bulbs containing dibromomethane
J. Appl. Phys. 54, 6687–6689 (1983)
https://doi.org/10.1063/1.331855
The influence of network topology on time‐crosslink density reduction
J. Appl. Phys. 54, 6690–6696 (1983)
https://doi.org/10.1063/1.331847
Amorphous silicon solar cells with graded boron‐doped active layers
J. Appl. Phys. 54, 6705–6707 (1983)
https://doi.org/10.1063/1.331857
Degradation of a CuxS/CdS solar cell in hot, moist air and recovery in hydrogen and air
J. Appl. Phys. 54, 6708–6720 (1983)
https://doi.org/10.1063/1.331858
Double heterojunction GaAs/AlxGa1−xAs bipolar transistors prepared by molecular beam epitaxy
J. Appl. Phys. 54, 6725–6731 (1983)
https://doi.org/10.1063/1.331860
Equivalence of different solutions of the vector potential for a thick solenoid
J. Appl. Phys. 54, 6740–6741 (1983)
https://doi.org/10.1063/1.331862
Temporal and spatial growth of ionization currents in nitrogen below Paschen’s minimum
J. Appl. Phys. 54, 6745–6748 (1983)
https://doi.org/10.1063/1.331865
Heavy doping of GaAs and AlGaAs with silicon by molecular beam epitaxy
J. Appl. Phys. 54, 6751–6753 (1983)
https://doi.org/10.1063/1.331867
Shallow diffusion profile analysis of phosphorus in silicon at 1100 °C and an empirical fit
J. Appl. Phys. 54, 6754–6756 (1983)
https://doi.org/10.1063/1.331868
Effects of overdriven shock states on the equation of state of 9404 explosive
J. Appl. Phys. 54, 6760–6763 (1983)
https://doi.org/10.1063/1.331870
Improvement of the performance of particulate phthalocyanine photovoltaic cells by the use of polar polymer binders
J. Appl. Phys. 54, 6764–6766 (1983)
https://doi.org/10.1063/1.331871
A specific trap level at 78 meV in undoped liquid encapsulated Czochralski grown GaAs–SI materials
J. Appl. Phys. 54, 6767–6770 (1983)
https://doi.org/10.1063/1.331872
Observation of a two‐dimensional electron gas in a GaAs1−yPy–GaAs (y=0.25) strained layer superlattice
J. Appl. Phys. 54, 6771–6772 (1983)
https://doi.org/10.1063/1.331873
Studies of deep levels in Si epitaxy grown by SiCl4–H2 system
J. Appl. Phys. 54, 6773–6775 (1983)
https://doi.org/10.1063/1.331874
Strontium nitrite monohydrate: A new pyroelectric nonlinear optic material
J. Appl. Phys. 54, 6776–6778 (1983)
https://doi.org/10.1063/1.331839
Quantum efficiency measurement of a photodiode based on a calorimetric method
J. Appl. Phys. 54, 6782–6784 (1983)
https://doi.org/10.1063/1.331841
Photoluminescence from CdTe/sapphire films prepared by molecular beam epitaxy
J. Appl. Phys. 54, 6785–6786 (1983)
https://doi.org/10.1063/1.331842
Electric field modulation of photoluminescence in cadmium selenide liquid junction solar cells
J. Appl. Phys. 54, 6787–6789 (1983)
https://doi.org/10.1063/1.331843
Depth profiling of tritium in solids with the nuclear reaction induced by deuteron bombardment
J. Appl. Phys. 54, 6790–6791 (1983)
https://doi.org/10.1063/1.331844
Selective photon emission in bombardment of the fluoride‐molecular ions on a Be surface
J. Appl. Phys. 54, 6792–6794 (1983)
https://doi.org/10.1063/1.331845
A step-by-step guide to perform x-ray photoelectron spectroscopy
Grzegorz Greczynski, Lars Hultman
Piezoelectric thin films and their applications in MEMS: A review
Jinpeng Liu, Hua Tan, et al.
Tutorial: Simulating modern magnetic material systems in mumax3
Jonas J. Joos, Pedram Bassirian, et al.