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A new method of electric field measurements in corona discharge using Pockels device
J. Appl. Phys. 53, 5999–6003 (1982)
https://doi.org/10.1063/1.331568
Performance of a seven‐segment iridium oxide electrochromic display
J. Appl. Phys. 53, 6004–6006 (1982)
https://doi.org/10.1063/1.331569
A fast algorithm for inhomogeneous slab scattering problems from the integral equation approach
J. Appl. Phys. 53, 6009–6014 (1982)
https://doi.org/10.1063/1.331571
Ion beam extraction with ion space‐charge compensation in beam‐plasma type ion source
J. Appl. Phys. 53, 6018–6028 (1982)
https://doi.org/10.1063/1.331573
The dynamics of electron‐hole collection in quantum well heterostructures
J. Appl. Phys. 53, 6043–6046 (1982)
https://doi.org/10.1063/1.331554
The effect of strain upon the velocity of sound and the velocity of free retraction for natural rubber
J. Appl. Phys. 53, 6069–6075 (1982)
https://doi.org/10.1063/1.331558
Measurement of the tandem mirror experiment x‐ray spectrum
J. Appl. Phys. 53, 6085–6089 (1982)
https://doi.org/10.1063/1.331560
Scaling of ion expansion energy with laser flux in moderate‐Z plasmas produced by lasers
J. Appl. Phys. 53, 6090–6095 (1982)
https://doi.org/10.1063/1.331561
Vibrationally excited diatomic molecules as charge injectors during corona charging of polymer films
J. Appl. Phys. 53, 6106–6114 (1982)
https://doi.org/10.1063/1.331564
Identification of AsGa antisites in plastically deformed GaAs
J. Appl. Phys. 53, 6140–6143 (1982)
https://doi.org/10.1063/1.331577
Effects of ion‐implantation‐induced damages and impurity on platinum silicide formation
J. Appl. Phys. 53, 6144–6147 (1982)
https://doi.org/10.1063/1.331578
Correlation of electrical carrier and atomic profiles of Mg implants in GaAs
J. Appl. Phys. 53, 6148–6153 (1982)
https://doi.org/10.1063/1.331579
Comparison of Ar‐, O‐, and Cl‐ion implant‐damage gettering of gold from silicon using metal oxide silicon techniques
J. Appl. Phys. 53, 6168–6173 (1982)
https://doi.org/10.1063/1.331528
Au diffusion in amorphous and polycrystalline Ni0.55 Nb0.45
J. Appl. Phys. 53, 6186–6190 (1982)
https://doi.org/10.1063/1.331531
Epitaxial regrowth of (100) InP layers amorphized by ion implantation at room temperature
J. Appl. Phys. 53, 6202–6207 (1982)
https://doi.org/10.1063/1.331533
Carrier compensation at interfaces formed by molecular beam epitaxy
J. Appl. Phys. 53, 6208–6213 (1982)
https://doi.org/10.1063/1.331534
Crystallization and resistivity of amorphous titanium silicide films deposited by coevaporation
J. Appl. Phys. 53, 6214–6219 (1982)
https://doi.org/10.1063/1.331535
Effects of Q‐switched green laser beam scanning on silicon bipolar transistor electrical characteristics
J. Appl. Phys. 53, 6246–6249 (1982)
https://doi.org/10.1063/1.331541
Depletion layer studies and carrier photogeneration in doped merocyanine photovoltaic cells
J. Appl. Phys. 53, 6262–6269 (1982)
https://doi.org/10.1063/1.331544
Minority‐carrier diffusion lengths in amorphous silicon‐based alloys
J. Appl. Phys. 53, 6270–6275 (1982)
https://doi.org/10.1063/1.331545
Calculations of experimental implications of tensor properties of resistance fluctuations
J. Appl. Phys. 53, 6276–6279 (1982)
https://doi.org/10.1063/1.331546
Space‐charge limited conduction in n+nn+ amorphous hydrogenated silicon films
J. Appl. Phys. 53, 6285–6288 (1982)
https://doi.org/10.1063/1.331548
Capacitance spectroscopy of localized states at metal‐semiconductor interfaces. I. Theory
J. Appl. Phys. 53, 6289–6299 (1982)
https://doi.org/10.1063/1.331549
Silicide and Schottky barrier formation in the Ti‐Si and the Ti‐SiOx ‐Si systems
J. Appl. Phys. 53, 6308–6315 (1982)
https://doi.org/10.1063/1.331551
Superconducting lead particles produced by chemical techniques
J. Appl. Phys. 53, 6316–6324 (1982)
https://doi.org/10.1063/1.331552
Magnetic domain structures and domain walls in iron fine particles
J. Appl. Phys. 53, 6331–6334 (1982)
https://doi.org/10.1063/1.331501
Effects of Cd‐vapor and Te‐vapor heat treatments on the luminescence of solution‐grown CdTe:In
J. Appl. Phys. 53, 6347–6359 (1982)
https://doi.org/10.1063/1.331504
High‐sensitivity silicide films for optical recording
J. Appl. Phys. 53, 6360–6364 (1982)
https://doi.org/10.1063/1.331505
Lateral seeding epitaxy by cw Ar laser irradiation and by high temperature chemical vapor deposition technique
J. Appl. Phys. 53, 6387–6390 (1982)
https://doi.org/10.1063/1.331510
Impurity and defect levels in beryllium‐doped GaAs grown by molecular beam epitaxy
J. Appl. Phys. 53, 6391–6398 (1982)
https://doi.org/10.1063/1.331511
Development of laser diagnostic probes for chemical vapor deposition of InP/InGaAsP epitaxial layers
J. Appl. Phys. 53, 6399–6407 (1982)
https://doi.org/10.1063/1.331512
Effect of oxygen on chromium‐structural defects interaction in ion‐implanted gallium arsenide
J. Appl. Phys. 53, 6413–6417 (1982)
https://doi.org/10.1063/1.331514
Background and temperature dependent current‐voltage characteristics of HgCdTe photodiodes
J. Appl. Phys. 53, 6430–6440 (1982)
https://doi.org/10.1063/1.331516
Thermal conductivity and specific heat of the chalcogenide salt: Tl3 AsSe3
J. Appl. Phys. 53, 6450–6452 (1982)
https://doi.org/10.1063/1.331520
Some unexpected equilibrium and transport properties in indium‐doped silicon
J. Appl. Phys. 53, 6457–6458 (1982)
https://doi.org/10.1063/1.331499
Switching dynamics of ac superconducting quantum interference devices and determination of rest currents
J. Appl. Phys. 53, 6461–6464 (1982)
https://doi.org/10.1063/1.331523
Comment on ’’A photoluminescence study of beryllium‐doped GaAs grown by molecular beam epitaxy’’
J. Appl. Phys. 53, 6467–6468 (1982)
https://doi.org/10.1063/1.331525
Reply to ’’Comment on ’A photoluminescence study of beryllium‐doped GaAs grown by molecular beam epitaxy’ ’’
J. Appl. Phys. 53, 6469–6470 (1982)
https://doi.org/10.1063/1.331491
Photoluminescence evaluation of semi‐insulating GaAs grown by the liquid encapsulated Czochralski technique
J. Appl. Phys. 53, 6471–6474 (1982)
https://doi.org/10.1063/1.331492
On conditioning: Reduction of secondary‐ and rf‐field emission by electron, photon, or helium impact
J. Appl. Phys. 53, 6475–6478 (1982)
https://doi.org/10.1063/1.331493
Hydrogenated amorphous silicon growth by CO2 laser photodissociation of silane
J. Appl. Phys. 53, 6479–6481 (1982)
https://doi.org/10.1063/1.331494
Second and third harmonic generation in the presence of a direct current
J. Appl. Phys. 53, 6482–6484 (1982)
https://doi.org/10.1063/1.331495
A new formula for calculating the inductance of a superconducting strip transmission line
J. Appl. Phys. 53, 6485–6488 (1982)
https://doi.org/10.1063/1.331496
Erratum: Limits of detection for condensation nuclei counters [J. Appl. Phys. 52, 3062 (1981)]
J. Appl. Phys. 53, 6492–6493 (1982)
https://doi.org/10.1063/1.331498
Re-examination of important defect complexes in silicon: From microelectronics to quantum computing
P. P. Filippatos, A. Chroneos, et al.
Tutorial: Simulating modern magnetic material systems in mumax3
Jonas J. Joos, Pedram Bassirian, et al.
Piezoelectric thin films and their applications in MEMS: A review
Jinpeng Liu, Hua Tan, et al.