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Thermodynamic limits to the conversion of blackbody radiation by quantum systems
J. Appl. Phys. 53, 5382–5386 (1982)
https://doi.org/10.1063/1.331466
Theoretical and experimental studies of electron deposition in thin targets
J. Appl. Phys. 53, 5401–5407 (1982)
https://doi.org/10.1063/1.331469
Generation of a cold, intense relativistic electron beam using a magnetized foilless diode
J. Appl. Phys. 53, 5408–5413 (1982)
https://doi.org/10.1063/1.331470
Time domain photoacoustic relaxation measurements: Vibrational energy transfer for HD in v = 4, 5, and 6
J. Appl. Phys. 53, 5420–5426 (1982)
https://doi.org/10.1063/1.331464
A diagnostic for intense focused proton beams using the 11B (p,α)2α reaction
J. Appl. Phys. 53, 5440–5443 (1982)
https://doi.org/10.1063/1.331474
Madey’s gain‐spread theorem for the free‐electron laser and the theory of stochastic processes
J. Appl. Phys. 53, 5453–5458 (1982)
https://doi.org/10.1063/1.331477
An iterative solution to Chandrasekhar X and Y equations for isotropic scattering
J. Appl. Phys. 53, 5479–5483 (1982)
https://doi.org/10.1063/1.331481
GeO2‐ZnO‐K2O glass as the cladding material of 940‐cm−1 CO2 laser‐light transmitting hollow‐core waveguide
J. Appl. Phys. 53, 5484–5490 (1982)
https://doi.org/10.1063/1.331482
Shear modulus gradients in adhesive interfaces as determined by means of ultrasonic Rayleigh waves (II)
J. Appl. Phys. 53, 5514–5517 (1982)
https://doi.org/10.1063/1.331409
Radiative cooling with selectively infrared‐emitting ammonia gas
J. Appl. Phys. 53, 5526–5530 (1982)
https://doi.org/10.1063/1.331487
Plasma etching of sputtered Mo and MoSi2 thin films in NF3 gas mixtures
J. Appl. Phys. 53, 5531–5540 (1982)
https://doi.org/10.1063/1.331488
The influence of molecular nitrogen upon plasma channel formation by laser resonance saturation
J. Appl. Phys. 53, 5541–5551 (1982)
https://doi.org/10.1063/1.331489
Calculation of sparking potentials in industrially important insulating electronegative gases
J. Appl. Phys. 53, 5557–5564 (1982)
https://doi.org/10.1063/1.331437
Enhanced photoemission from fluorine atoms in SF6 and CF4 arc discharge
J. Appl. Phys. 53, 5578–5583 (1982)
https://doi.org/10.1063/1.331439
Homogeneous electric field threshold switching phenomena in a multiplexible bistable liquid crystal display
J. Appl. Phys. 53, 5584–5595 (1982)
https://doi.org/10.1063/1.331440
Hydrogen content of a variety of plasma‐deposited silicon nitrides
J. Appl. Phys. 53, 5630–5633 (1982)
https://doi.org/10.1063/1.331445
Ion channeling in GaAs: Be, Mg, Zn, and Cd, and calculations of electronic stopping powers
J. Appl. Phys. 53, 5641–5644 (1982)
https://doi.org/10.1063/1.331447
Diffusion in intermetallic compounds with the CaF2 structure: A marker study of the formation of NiSi2 thin films
J. Appl. Phys. 53, 5678–5681 (1982)
https://doi.org/10.1063/1.331453
Properties of CdTe‐Te alloy films prepared using molecular beams
J. Appl. Phys. 53, 5697–5702 (1982)
https://doi.org/10.1063/1.331456
Quantum efficiency of internal photoeffects in narrow‐gap semiconductor: A model
J. Appl. Phys. 53, 5710–5714 (1982)
https://doi.org/10.1063/1.331458
Transient capacitance studies of an electron trap at Ec−ET = 0.105 eV in phosphorus‐doped silicon
J. Appl. Phys. 53, 5715–5719 (1982)
https://doi.org/10.1063/1.331459
Defect production and lifetime control in electron and γ‐irradiated silicon
J. Appl. Phys. 53, 5720–5732 (1982)
https://doi.org/10.1063/1.331460
Influence of carbon and oxygen on donor formation at 700 °C in Czochralski‐grown silicon
J. Appl. Phys. 53, 5733–5737 (1982)
https://doi.org/10.1063/1.331461
Degradation mechanism of zinc oxide varistors under dc bias
J. Appl. Phys. 53, 5754–5762 (1982)
https://doi.org/10.1063/1.331410
Thermally stimulated currents in polyethylene irradiated by γ rays at low temperature
J. Appl. Phys. 53, 5763–5770 (1982)
https://doi.org/10.1063/1.331411
Effects of stoichiometry on thermal stability of undoped, semi‐insulating GaAs
J. Appl. Phys. 53, 5771–5775 (1982)
https://doi.org/10.1063/1.331412
Geometrical effects in contact resistance measurements: Finite element modeling and experimental results
J. Appl. Phys. 53, 5776–5782 (1982)
https://doi.org/10.1063/1.331413
Rutherford backscattering analysis of electroless gold contacts on cadmium telluride
J. Appl. Phys. 53, 5785–5788 (1982)
https://doi.org/10.1063/1.331415
Self‐field effects in superconductor‐normal metal‐superconductor junctions
J. Appl. Phys. 53, 5798–5801 (1982)
https://doi.org/10.1063/1.331417
Effect of boundary conditions upon the phase distribution in two‐ dimensional Josephson junctions
J. Appl. Phys. 53, 5802–5809 (1982)
https://doi.org/10.1063/1.331418
Charged wall formation and propagation analysis in ion‐implanted contiguous disk bubble devices
J. Appl. Phys. 53, 5815–5822 (1982)
https://doi.org/10.1063/1.331420
Electrical breakdown of aluminum oxide films flanked by metallic electrodes
J. Appl. Phys. 53, 5840–5850 (1982)
https://doi.org/10.1063/1.331423
Refractive indices of III–V compounds: Key properties of InGaAsP relevant to device design
J. Appl. Phys. 53, 5863–5869 (1982)
https://doi.org/10.1063/1.331425
Luminescence study of a deep level in N‐free GaP light‐emitting diodes
J. Appl. Phys. 53, 5876–5881 (1982)
https://doi.org/10.1063/1.331428
Emission characteristics of single‐crystal LaB6 electron gun
J. Appl. Phys. 53, 5891–5897 (1982)
https://doi.org/10.1063/1.331430
Electrical and structural properties of p‐n junctions in cw laser annealed silicon
J. Appl. Phys. 53, 5904–5907 (1982)
https://doi.org/10.1063/1.331432
Carbon tetrachloride plasma etching of GaAs and InP: A kinetic study utilizing nonperturbative optical techniques
J. Appl. Phys. 53, 5908–5919 (1982)
https://doi.org/10.1063/1.331433
On the cause of the flat‐spot phenomenon observed in silicon solar cells at low temperatures and low intensities
J. Appl. Phys. 53, 5926–5930 (1982)
https://doi.org/10.1063/1.331435
Current and magnetic field penetration into a plasma: Application to high power‐density flow in transmission lines
J. Appl. Phys. 53, 5931–5935 (1982)
https://doi.org/10.1063/1.331436
Interfacial layer‐thermionic‐diffusion theory for the Schottky barrier diode
J. Appl. Phys. 53, 5947–5950 (1982)
https://doi.org/10.1063/1.331384
Normally‐on and normally‐off camel diode gate GaAs field effect transistors for large scale integration
J. Appl. Phys. 53, 5951–5958 (1982)
https://doi.org/10.1063/1.331385
Comment on ‘‘Thermocouple temperature measurements in shock‐compressed solids’’
J. Appl. Phys. 53, 5964–5965 (1982)
https://doi.org/10.1063/1.331387
Reply to ‘‘Comment on ‘Thermocouple Temperature measurements in shock‐compressed solids’ ’’
J. Appl. Phys. 53, 5966–5967 (1982)
https://doi.org/10.1063/1.331388
The determination of grain‐boundary recombination rates by scanned spot excitation methods
J. Appl. Phys. 53, 5968–5971 (1982)
https://doi.org/10.1063/1.331389
Chromium and iron impurities in liquid encapsulated Czochralski gallium arsenide
J. Appl. Phys. 53, 5972–5974 (1982)
https://doi.org/10.1063/1.331390
Experimental investigation of magnetostatic surface wave amplification in GaAs‐yttrium iron garnet layered structure
J. Appl. Phys. 53, 5979–5981 (1982)
https://doi.org/10.1063/1.331406
Addendum: New model of electron free path in multiple layers for Monte Carlo simulation
J. Appl. Phys. 53, 5985 (1982)
https://doi.org/10.1063/1.331408
Electron channeling patterns in the scanning electron microscope
J. Appl. Phys. 53, R81–R122 (1982)
https://doi.org/10.1063/1.331668
A step-by-step guide to perform x-ray photoelectron spectroscopy
Grzegorz Greczynski, Lars Hultman
Efficient methods for extracting superconducting resonator loss in the single-photon regime
Cliff Chen, David Perello, et al.
Tutorial: Simulating modern magnetic material systems in mumax3
Jonas J. Joos, Pedram Bassirian, et al.