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Time response of a vertical electric dipole over a two‐layer medium by the double deformation technique

J. Appl. Phys. 53, 813–822 (1982) https://doi.org/10.1063/1.330586

View articletitled, Time response of a vertical electric dipole over a two‐layer medium by the double deformation technique

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Millimeter wave mixing with submicron area Nb tunnel junctions

A. C. Callegari; R. A. Buhrman

J. Appl. Phys. 53, 823–827 (1982) https://doi.org/10.1063/1.330587

Abstract

View articletitled, Millimeter wave mixing with submicron area Nb tunnel junctions

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Ionic bond effects on the mean excitation energy for stopping power

J. W. Wilson; C. K. Chang; Y. J. Xu; E. Kamaratos

J. Appl. Phys. 53, 828–830 (1982) https://doi.org/10.1063/1.330588

Abstract

View articletitled, Ionic bond effects on the mean excitation energy for stopping power

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Formulation of normalized nonlinear free electron laser equations

Cha‐Mei Tang; P. Sprangle

J. Appl. Phys. 53, 831–839 (1982) https://doi.org/10.1063/1.330589

Abstract

View articletitled, Formulation of normalized nonlinear free electron laser equations

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Waveguiding in oxide‐isolated stripe‐geometry diode lasers

Joanne S. Manning; Robert Olshansky

J. Appl. Phys. 53, 840–842 (1982) https://doi.org/10.1063/1.330582

Abstract

View articletitled, Waveguiding in oxide‐isolated stripe‐geometry diode lasers

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Waveguiding in stripe‐geometry diode lasers with power‐law profiles

Robert Olshansky

J. Appl. Phys. 53, 843–845 (1982) https://doi.org/10.1063/1.330590

Abstract

View articletitled, Waveguiding in stripe‐geometry diode lasers with power‐law profiles

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Observation of surface cracks with scanning acoustic microscope

Kazushi Yamanaka; Yuji Enomoto

J. Appl. Phys. 53, 846–850 (1982) https://doi.org/10.1063/1.330591

Abstract

View articletitled, Observation of surface cracks with scanning acoustic microscope

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Experimental investigation of electrical breakdown in nitrogen and oxygen induced by focused laser radiation at 1.064 μ

J. Stricker; J. G. Parker

J. Appl. Phys. 53, 851–855 (1982) https://doi.org/10.1063/1.330592

Abstract

View articletitled, Experimental investigation of electrical breakdown in nitrogen and oxygen induced by focused laser radiation at 1.064 μ

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Calculation of the current‐voltage‐pressure characteristics of dc diode sputtering discharges

S. Maniv; W. D. Westwood; P. J. Scanlon

J. Appl. Phys. 53, 856–860 (1982) https://doi.org/10.1063/1.330550

Abstract

View articletitled, Calculation of the current‐voltage‐pressure characteristics of dc diode sputtering discharges

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Diffraction of ion‐acoustic waves

E. Okutsu; Y. Nakamura; K. E. Lonngren

J. Appl. Phys. 53, 861–864 (1982) https://doi.org/10.1063/1.330551

Abstract

View articletitled, Diffraction of ion‐acoustic waves

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Second‐harmonic generation at resonance absorption and modified plasma density profile

R. Dragila

J. Appl. Phys. 53, 865–867 (1982) https://doi.org/10.1063/1.330552

Abstract

View articletitled, Second‐harmonic generation at resonance absorption and modified plasma density profile

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Intensity‐induced precessional rotation of electromagnetic waves in a plasma

B. Bhattacharyya; B. Chakraborty

J. Appl. Phys. 53, 868–873 (1982) https://doi.org/10.1063/1.330553

Abstract

View articletitled, Intensity‐induced precessional rotation of electromagnetic waves in a plasma

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Irradiance scaling of fast ion expansion for CO₂ laser produced plasmas

P. Church; F. Martin; H. Pépin; R. Decoste

J. Appl. Phys. 53, 874–877 (1982) https://doi.org/10.1063/1.330554

Abstract

View articletitled, Irradiance scaling of fast ion expansion for CO2 laser produced plasmas

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Techniques for producing uniform linear filamentary laser sparks

Robert W. Schmieder

J. Appl. Phys. 53, 878–885 (1982) https://doi.org/10.1063/1.330555

Abstract

View articletitled, Techniques for producing uniform linear filamentary laser sparks

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One‐dimensional static sheath characteristics

J. L. Nightingale; E. R. Ault; A. A. Mondelli

J. Appl. Phys. 53, 886–890 (1982) https://doi.org/10.1063/1.330556

Abstract

View articletitled, One‐dimensional static sheath characteristics

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Simple approximate treatment of unipolar space‐charge‐dominated coronas: The Warburg law and the saturation current

R. S. Sigmond

J. Appl. Phys. 53, 891–898 (1982) https://doi.org/10.1063/1.330557

Abstract

View articletitled, Simple approximate treatment of unipolar space‐charge‐dominated coronas: The Warburg law and the saturation current

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Alignment signals from silicon tapered steps for electron beam lithography

Yi‐Ching Lin; Andrew R. Neureuther; Ilesanmi Adesida

J. Appl. Phys. 53, 899–911 (1982) https://doi.org/10.1063/1.330558

Abstract

View articletitled, Alignment signals from silicon tapered steps for electron beam lithography

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Cell formation and interfacial instability in laser‐annealed Si‐In and Si‐Sb alloys

J. Narayan; H. Naramoto; C. W. White

J. Appl. Phys. 53, 912–915 (1982) https://doi.org/10.1063/1.330559

Abstract

View articletitled, Cell formation and interfacial instability in laser‐annealed Si‐In and Si‐Sb alloys

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Electric‐field‐induced texture and phase transformation of liquid‐crystal films

Catherine G. Lin‐Hendel

J. Appl. Phys. 53, 916–920 (1982) https://doi.org/10.1063/1.330560

Abstract

View articletitled, Electric‐field‐induced texture and phase transformation of liquid‐crystal films

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Kinetics of laser‐induced solid phase epitaxy in amorphous silicon films

S. A. Kokorowski; G. L. Olson; L. D. Hess

J. Appl. Phys. 53, 921–926 (1982) https://doi.org/10.1063/1.330561

Abstract

View articletitled, Kinetics of laser‐induced solid phase epitaxy in amorphous silicon films

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Thermally stimulated processes involving defects in γ‐ and x‐irradiated spinel (MgAl₂O₄)

A. Lorincz; M. Puma; F. J. James; J. H. Crawford, Jr.

J. Appl. Phys. 53, 927–932 (1982) https://doi.org/10.1063/1.330562

Abstract

View articletitled, Thermally stimulated processes involving defects in γ‐ and x‐irradiated spinel (MgAl2O4)

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Microstrain behavior of nickel single crystals in stage II deformation

D. G. Pinatti; J. M. Roberts

J. Appl. Phys. 53, 933–939 (1982) https://doi.org/10.1063/1.330563

Abstract

View articletitled, Microstrain behavior of nickel single crystals in stage II deformation

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Production and annealing of ion‐bombardment damage in silicides of Pt, Pd, and Ni

B‐Y. Tsaur; C. H. Anderson, Jr.

J. Appl. Phys. 53, 940–942 (1982) https://doi.org/10.1063/1.330564

Abstract

View articletitled, Production and annealing of ion‐bombardment damage in silicides of Pt, Pd, and Ni

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An analytic model for the shock Hugoniot in porous materials

Girard A. Simons; Hartmut H. Legner

J. Appl. Phys. 53, 943–947 (1982) https://doi.org/10.1063/1.330565

Abstract

View articletitled, An analytic model for the shock Hugoniot in porous materials

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Determination of mean and deviatoric stresses in shock loaded solids

P. F. Chartagnac

J. Appl. Phys. 53, 948–953 (1982) https://doi.org/10.1063/1.330573

Abstract

View articletitled, Determination of mean and deviatoric stresses in shock loaded solids

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On the dynamical response of particulate‐loaded materials. I. Pressure‐shear loading of alumina particles in an epoxy matrix

L. C. Chhabildas; J. W. Swegle

J. Appl. Phys. 53, 954–956 (1982) https://doi.org/10.1063/1.330574

Abstract

View articletitled, On the dynamical response of particulate‐loaded materials. I. Pressure‐shear loading of alumina particles in an epoxy matrix

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On the dynamical response of particulate‐loaded materials. II. A theory with application to alumina particles in an epoxy matrix

D. S. Drumheller

J. Appl. Phys. 53, 957–969 (1982) https://doi.org/10.1063/1.330575

Abstract

View articletitled, On the dynamical response of particulate‐loaded materials. II. A theory with application to alumina particles in an epoxy matrix

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Deuterium permeation through copper with trapping impurities

D. J. Mitchell; J. M. Harris; R. C. Patrick; E. P. Boespflug; L. C. Beavis

J. Appl. Phys. 53, 970–978 (1982) https://doi.org/10.1063/1.330576

Abstract

View articletitled, Deuterium permeation through copper with trapping impurities

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A technique for investigating the properties of surfaces, thin films, and interfaces by means of a mechanical marginal oscillator

G. L. Miller; M. Soni; R. L. Fenstermacher

J. Appl. Phys. 53, 979–983 (1982) https://doi.org/10.1063/1.330577

Abstract

View articletitled, A technique for investigating the properties of surfaces, thin films, and interfaces by means of a mechanical marginal oscillator

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The regrowth and impurity diffusion processes in the arc annealing of ion‐implanted silicon

Juh‐Tzeng Lue; Chen‐Chung Chao

J. Appl. Phys. 53, 984–987 (1982) https://doi.org/10.1063/1.330578

Abstract

View articletitled, The regrowth and impurity diffusion processes in the arc annealing of ion‐implanted silicon

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The simulation of images in the field ion microscope: Specimens of arbitrary crystal structure and orientation

H. C. Eaton; L. Lee

J. Appl. Phys. 53, 988–994 (1982) https://doi.org/10.1063/1.330579

Abstract

View articletitled, The simulation of images in the field ion microscope: Specimens of arbitrary crystal structure and orientation

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Low‐temperature formation of polycrystalline silicon films by molecular beam deposition

Makoto Matsui; Yasuhiro Shiraki; Eiichi Maruyama

J. Appl. Phys. 53, 995–998 (1982) https://doi.org/10.1063/1.330580

Abstract

View articletitled, Low‐temperature formation of polycrystalline silicon films by molecular beam deposition

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Electrical properties and photoluminescence of Te‐doped GaAs grown by molecular beam epitaxy

Jiang De‐Sheng; Y. Makita; K. Ploog; H. J. Queisser

J. Appl. Phys. 53, 999–1006 (1982) https://doi.org/10.1063/1.330581

Abstract

View articletitled, Electrical properties and photoluminescence of Te‐doped GaAs grown by molecular beam epitaxy

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Interfacial reactions between aluminum and transition‐metal nitride and carbide films

Marc Wittmer

J. Appl. Phys. 53, 1007–1012 (1982) https://doi.org/10.1063/1.330509

Abstract

View articletitled, Interfacial reactions between aluminum and transition‐metal nitride and carbide films

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Gap‐states measurement of chemically vapor‐deposited amorphous silicon: High‐frequency capacitance‐voltage method

Goro Sasaki; Shizuo Fujita; Akio Sasaki

J. Appl. Phys. 53, 1013–1017 (1982) https://doi.org/10.1063/1.330510

Abstract

View articletitled, Gap‐states measurement of chemically vapor‐deposited amorphous silicon: High‐frequency capacitance‐voltage method

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Electron traps in ZnSe grown by liquid‐phase epitaxy

K. Kosai

J. Appl. Phys. 53, 1018–1022 (1982) https://doi.org/10.1063/1.330511

Abstract

View articletitled, Electron traps in ZnSe grown by liquid‐phase epitaxy

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Electron mobility in single and multiple period modulation‐doped (Al,Ga)As/GaAs heterostructures

T. J. Drummond; W. Kopp; M. Keever; H. Morkoç; A. Y. Cho

J. Appl. Phys. 53, 1023–1027 (1982) https://doi.org/10.1063/1.330512

Abstract

View articletitled, Electron mobility in single and multiple period modulation‐doped (Al,Ga)As/GaAs heterostructures

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Influence of AlAs mole fraction on the electron mobility of (Al,Ga)As/GaAs heterostructures

T. J. Drummond; W. Kopp; R. Fischer; H. Morkoç

J. Appl. Phys. 53, 1028–1029 (1982) https://doi.org/10.1063/1.330513

Abstract

View articletitled, Influence of AlAs mole fraction on the electron mobility of (Al,Ga)As/GaAs heterostructures

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Interfacial properties of (Al,Ga)As/GaAs structures: Effect of substrate temperature during growth by molecular beam epitaxy

H. Morkoç; T. J. Drummond; R. Fischer

J. Appl. Phys. 53, 1030–1033 (1982) https://doi.org/10.1063/1.330514

Abstract

View articletitled, Interfacial properties of (Al,Ga)As/GaAs structures: Effect of substrate temperature during growth by molecular beam epitaxy

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Hall effect and mobility in heterojunction layers

M. Keever; T. J. Drummond; H. Morkoç; K. Hess; B. G. Streetman; M. Ludowise

J. Appl. Phys. 53, 1034–1036 (1982) https://doi.org/10.1063/1.330547

Abstract

View articletitled, Hall effect and mobility in heterojunction layers

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Stimulated Raman scattering in a magnetoactive piezoelectric semiconductor

N. Apte; S. Ghosh

J. Appl. Phys. 53, 1037–1044 (1982) https://doi.org/10.1063/1.330548

Abstract

View articletitled, Stimulated Raman scattering in a magnetoactive piezoelectric semiconductor

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On the current‐voltage characteristics of amorphous hydrogenated silicon Schottky diodes

Inan Chen; Sanboh Lee

J. Appl. Phys. 53, 1045–1051 (1982) https://doi.org/10.1063/1.330549

Abstract

View articletitled, On the current‐voltage characteristics of amorphous hydrogenated silicon Schottky diodes

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Two‐electron conduction in N‐type Hg_1−xCd_xTe

E. Finkman; Y. Nemirovsky

J. Appl. Phys. 53, 1052–1058 (1982) https://doi.org/10.1063/1.330515

Abstract

View articletitled, Two‐electron conduction in N‐type Hg1−xCdxTe

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The work function of sputter‐formed Re‐1% Pt. II. Recrystallized surface

R. L. Gordon

J. Appl. Phys. 53, 1059–1064 (1982) https://doi.org/10.1063/1.330516

Abstract

View articletitled, The work function of sputter‐formed Re‐1% Pt. II. Recrystallized surface

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Voltage and thermal treatment of tunnel junctions

G. Hernández; D. Montalvo; T. A. Will

J. Appl. Phys. 53, 1065–1068 (1982) https://doi.org/10.1063/1.330517

Abstract

View articletitled, Voltage and thermal treatment of tunnel junctions

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Properties of zinc phosphide/zinc oxide heterojunctions

P. S. Nayar

J. Appl. Phys. 53, 1069–1075 (1982) https://doi.org/10.1063/1.330518

Abstract

View articletitled, Properties of zinc phosphide/zinc oxide heterojunctions

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The heteroepitaxy of Ge on Si: A comparison of chemical vapor and vacuum deposited layers

M. Mäenpää; T. F. Kuech; M‐A. Nicolet; S. S. Lau; D. K. Sadana

J. Appl. Phys. 53, 1076–1083 (1982) https://doi.org/10.1063/1.330519

Abstract

View articletitled, The heteroepitaxy of Ge on Si: A comparison of chemical vapor and vacuum deposited layers

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Laser‐induced metal deposition on InP

R. F. Karlicek; V. M. Donnelly; G. J. Collins

J. Appl. Phys. 53, 1084–1090 (1982) https://doi.org/10.1063/1.330520

Abstract

View articletitled, Laser‐induced metal deposition on InP

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Pd–thin‐SiO₂–Si diode. I. Isothermal variation of H₂‐induced interfacial trapping states

Bahman Keramati; Jay N. Zemel

J. Appl. Phys. 53, 1091–1099 (1982) https://doi.org/10.1063/1.330521

Abstract

View articletitled, Pd–thin‐SiO2–Si diode. I. Isothermal variation of H2‐induced interfacial trapping states

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Pd–thin‐SiO₂–Si diode. II. Theoretical modeling and the H₂ response

Bahman Keramati; Jay N. Zemel

J. Appl. Phys. 53, 1100–1109 (1982) https://doi.org/10.1063/1.330522

Abstract

View articletitled, Pd–thin‐SiO2–Si diode. II. Theoretical modeling and the H2 response

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Effect of absorbed water on an indium oxide insulator (BeO⋅SiO₂)‐p‐silicon solar cell

K. Ito; T. Nakazawa

J. Appl. Phys. 53, 1110–1114 (1982) https://doi.org/10.1063/1.330523

Abstract

View articletitled, Effect of absorbed water on an indium oxide insulator (BeO⋅SiO2)‐p‐silicon solar cell

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Superconducting transition temperatures of thin V₃Si layers formed by the interaction of V films with thinly oxidized Si wafers

Gin‐ichiro Oya; Hiroto Inabe; Yutaka Onodera; Yasuji Sawada

J. Appl. Phys. 53, 1115–1121 (1982) https://doi.org/10.1063/1.330524

Abstract

View articletitled, Superconducting transition temperatures of thin V3Si layers formed by the interaction of V films with thinly oxidized Si wafers

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Effect of additives on the properties of zinc‐manganese ferrite

K. H. Rao; N. K. Gaur; K. Aggarwal; R. G. Mendiratta

J. Appl. Phys. 53, 1122–1126 (1982) https://doi.org/10.1063/1.330525

Abstract

View articletitled, Effect of additives on the properties of zinc‐manganese ferrite

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Nuclear magnetic relaxation and the internal geometry of sedimentary rocks

Morrel H. Cohen; Kenneth S. Mendelson

J. Appl. Phys. 53, 1127–1135 (1982) https://doi.org/10.1063/1.330526

Abstract

View articletitled, Nuclear magnetic relaxation and the internal geometry of sedimentary rocks

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Thermally stimulated short‐circuited current from plasma‐polymerized polyacrylonitrile thin film sandwiched between aluminum electrodes

K. Mohanachandran; K. Sathianandan

J. Appl. Phys. 53, 1136–1140 (1982) https://doi.org/10.1063/1.330527

Abstract

View articletitled, Thermally stimulated short‐circuited current from plasma‐polymerized polyacrylonitrile thin film sandwiched between aluminum electrodes

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More about the dielectrophoretic force

L. Benguigui; I. J. Lin

J. Appl. Phys. 53, 1141–1143 (1982) https://doi.org/10.1063/1.329875

Abstract

View articletitled, More about the dielectrophoretic force

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Optical generation of tunable ultrasonic waves

Keith A. Nelson; R. J. Dwayne Miller; D. R. Lutz; M. D. Fayer

J. Appl. Phys. 53, 1144–1149 (1982) https://doi.org/10.1063/1.329864

Abstract

View articletitled, Optical generation of tunable ultrasonic waves

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Linear electro‐optic effect in tellurium dioxide

M. D. Ewbank; P. R. Newman

J. Appl. Phys. 53, 1150–1153 (1982) https://doi.org/10.1063/1.329865

Abstract

View articletitled, Linear electro‐optic effect in tellurium dioxide

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The impedance of the near ballistic electron transport device in n‐GaAs

Johnson Lee; M. O. Vassell

J. Appl. Phys. 53, 1154–1157 (1982) https://doi.org/10.1063/1.329866

Abstract

View articletitled, The impedance of the near ballistic electron transport device in n‐GaAs

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Model for solute redistribution during rapid solidification

M. J. Aziz

J. Appl. Phys. 53, 1158–1168 (1982) https://doi.org/10.1063/1.329867

Abstract

View articletitled, Model for solute redistribution during rapid solidification

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Temperature rise induced in Si by continuous xenon arc lamp radiation

A. Lietoila; R. B. Gold; J. F. Gibbons

J. Appl. Phys. 53, 1169–1172 (1982) https://doi.org/10.1063/1.330566

Abstract

View articletitled, Temperature rise induced in Si by continuous xenon arc lamp radiation

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A photoelectrochemical determination of the position of the conduction and valence band edges of p‐type CuO

F. P. Koffyberg; F. A. Benko

J. Appl. Phys. 53, 1173–1177 (1982) https://doi.org/10.1063/1.330567

Abstract

View articletitled, A photoelectrochemical determination of the position of the conduction and valence band edges of p‐type CuO

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Laser processing for high‐efficiency Si solar cells

R. T. Young; R. F. Wood; W. H. Christie

J. Appl. Phys. 53, 1178–1189 (1982) https://doi.org/10.1063/1.330568

Abstract

View articletitled, Laser processing for high‐efficiency Si solar cells

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Formation of metastable species in hydrogen thyratrons

Martin Gundersen; Shekhar Guha

J. Appl. Phys. 53, 1190–1192 (1982) https://doi.org/10.1063/1.330569

Abstract

View articletitled, Formation of metastable species in hydrogen thyratrons

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Conductivity behavior in polycrystalline semiconductor thin film transistors

J. Levinson; F. R. Shepherd; P. J. Scanlon; W. D. Westwood; G. Este; M. Rider

J. Appl. Phys. 53, 1193–1202 (1982) https://doi.org/10.1063/1.330583

Abstract

View articletitled, Conductivity behavior in polycrystalline semiconductor thin film transistors

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Heterojunction phototransistors for long‐wavelength optical receivers

J. C. Campbell; K. Ogawa

J. Appl. Phys. 53, 1203–1208 (1982) https://doi.org/10.1063/1.330570

Abstract

View articletitled, Heterojunction phototransistors for long‐wavelength optical receivers

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A comparison of transverse and linear preionizing spark arrays in transversely excited atmospheric CO₂ lasers

J. V. Cridland; S. Howells

J. Appl. Phys. 53, 1209–1211 (1982) https://doi.org/10.1063/1.330571

Abstract

View articletitled, A comparison of transverse and linear preionizing spark arrays in transversely excited atmospheric CO2 lasers

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Thermal focusing of a doughnut‐shaped laser mode

V. S. Soni; V. P. Nayyar

J. Appl. Phys. 53, 1212–1214 (1982) https://doi.org/10.1063/1.330572

Abstract

View articletitled, Thermal focusing of a doughnut‐shaped laser mode

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Stacking fault annihilation dependence on surface orientation in silicon

Yoshinori Hayafuji; Seiji Kawado

J. Appl. Phys. 53, 1215–1217 (1982) https://doi.org/10.1063/1.330528

Abstract

View articletitled, Stacking fault annihilation dependence on surface orientation in silicon

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Cr gettering by Ne ion implantation and the correlation with the electrical activation of implanted Si in semi‐insulating GaAs

H. Yagita; T. Onuma

J. Appl. Phys. 53, 1218–1220 (1982) https://doi.org/10.1063/1.330529

Abstract

View articletitled, Cr gettering by Ne ion implantation and the correlation with the electrical activation of implanted Si in semi‐insulating GaAs

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The kinetics of pressure‐induced α→ω transformation in Ti

A. K. Singh; Murali Mohan; C. Divakar

J. Appl. Phys. 53, 1221–1223 (1982) https://doi.org/10.1063/1.330530

Abstract

View articletitled, The kinetics of pressure‐induced α→ω transformation in Ti

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Simple estimate of electromigration failure in metallic thin films

A. Mogro‐Campero

J. Appl. Phys. 53, 1224–1225 (1982) https://doi.org/10.1063/1.330531

Abstract

View articletitled, Simple estimate of electromigration failure in metallic thin films

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Comment on ’’Gettering of mobile oxygen and defect stability within back‐surface damage regions in Si’’

H. F. Schaake

J. Appl. Phys. 53, 1226 (1982) https://doi.org/10.1063/1.330532

Abstract

View articletitled, Comment on ’’Gettering of mobile oxygen and defect stability within back‐surface damage regions in Si’’

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Reply to ’’Comment on ’Gettering of mobile oxygen and defect stability within back‐surface damage regions in Si’ ’’

T. J. Magee; B. K. Furman

J. Appl. Phys. 53, 1227–1228 (1982) https://doi.org/10.1063/1.330533

Abstract

View articletitled, Reply to ’’Comment on ’Gettering of mobile oxygen and defect stability within back‐surface damage regions in Si’ ’’

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Molecular beam epitaxial growth of lattice‐mismatched In_0.77Ga_0.23As on InP

Young G. Chai; Robert Chow

J. Appl. Phys. 53, 1229–1232 (1982) https://doi.org/10.1063/1.330534

Abstract

View articletitled, Molecular beam epitaxial growth of lattice‐mismatched In0.77Ga0.23As on InP

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Hole injection into silicon from ions in solution

S. Roy Morrison

J. Appl. Phys. 53, 1233–1235 (1982) https://doi.org/10.1063/1.330535

Abstract

View articletitled, Hole injection into silicon from ions in solution

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Electron diffusion lengths in liquid‐phase epitaxial p‐GaAs:Ge layers determined by electron‐beam‐induced current method

C. C. Shen; K. P. Pande; G. L. Pearson

J. Appl. Phys. 53, 1236–1237 (1982) https://doi.org/10.1063/1.330536

Abstract

View articletitled, Electron diffusion lengths in liquid‐phase epitaxial p‐GaAs:Ge layers determined by electron‐beam‐induced current method

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Photoconductivity effects in extremely high mobility modulation‐doped (Al,Ga)As/GaAs heterostructures

T. J. Drummond; W. Kopp; R. Fischer; H. Morkoç; R. E. Thorne; A. Y. Cho

J. Appl. Phys. 53, 1238–1240 (1982) https://doi.org/10.1063/1.330537

Abstract

View articletitled, Photoconductivity effects in extremely high mobility modulation‐doped (Al,Ga)As/GaAs heterostructures

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Electrical conduction at high fields in single‐injection, solid‐state diodes with traps lying above the Fermi level

Y. K. Sharma

J. Appl. Phys. 53, 1241–1243 (1982) https://doi.org/10.1063/1.330538

Abstract

View articletitled, Electrical conduction at high fields in single‐injection, solid‐state diodes with traps lying above the Fermi level

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Impact ionization at very low voltages in silicon

B. Eitan; D. Frohman‐Bentchkowsky; J. Shappir

J. Appl. Phys. 53, 1244–1247 (1982) https://doi.org/10.1063/1.330539

Abstract

View articletitled, Impact ionization at very low voltages in silicon

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The variation of residual impurities in ZnSe crystals used in light‐emitting diode fabrications

Zoltan K. Kun

J. Appl. Phys. 53, 1248–1250 (1982) https://doi.org/10.1063/1.330540

Abstract

View articletitled, The variation of residual impurities in ZnSe crystals used in light‐emitting diode fabrications

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A ruthenium dioxide‐semiconductor Schottky barrier photovoltaic device

A. J. McEvoy; W. Gissler

J. Appl. Phys. 53, 1251–1252 (1982) https://doi.org/10.1063/1.330541

Abstract

View articletitled, A ruthenium dioxide‐semiconductor Schottky barrier photovoltaic device

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Interface morphology of epitaxial growth of Ge on GaAs and GaAs on Ge by molecular beam epitaxy

Chin‐An Chang

J. Appl. Phys. 53, 1253–1255 (1982) https://doi.org/10.1063/1.330542

Abstract

View articletitled, Interface morphology of epitaxial growth of Ge on GaAs and GaAs on Ge by molecular beam epitaxy

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Comment on the complex‐dielectric constant of sea ice at frequencies in the range 0.1–40 GHz

B. A. Farrelly

J. Appl. Phys. 53, 1256–1257 (1982) https://doi.org/10.1063/1.330543

Abstract

View articletitled, Comment on the complex‐dielectric constant of sea ice at frequencies in the range 0.1–40 GHz

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Photoacoustic phase signatures of closed cracks

P. K. Kuo; L. D. Favro; L. J. Inglehart; R. L. Thomas; M. Srinivasan

J. Appl. Phys. 53, 1258–1260 (1982) https://doi.org/10.1063/1.330544

Abstract

View articletitled, Photoacoustic phase signatures of closed cracks

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Comments on the plasma annealing model to explain the dynamics of pulsed laser annealing of ion‐implanted silicon

Anjan Bhattacharyya; B. G. Streetman; K. Hess

J. Appl. Phys. 53, 1261 (1982) https://doi.org/10.1063/1.330545

Abstract

View articletitled, Comments on the plasma annealing model to explain the dynamics of pulsed laser annealing of ion‐implanted silicon

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Validity of Raman and transmission data reaffirmed

M. C. Lee; A. Aydinli; H. W. Lo; A. Compaan

J. Appl. Phys. 53, 1262 (1982) https://doi.org/10.1063/1.330546

Abstract

View articletitled, Validity of Raman and transmission data reaffirmed

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Photoluminescence identification of ∼77‐meV deep acceptor in GaAs

Phil Won Yu; D. C. Reynolds

J. Appl. Phys. 53, 1263–1265 (1982) https://doi.org/10.1063/1.330584

Abstract

View articletitled, Photoluminescence identification of ∼77‐meV deep acceptor in GaAs

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Multilevel Si doping in GaAs using a single AsCl₃:SiCl₄ doping source

V. Eu; M. Feng; T. Zielinski; J. M. Whelan

J. Appl. Phys. 53, 1266–1268 (1982) https://doi.org/10.1063/1.330585

Abstract

View articletitled, Multilevel Si doping in GaAs using a single AsCl3:SiCl4 doping source

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Erratum: Homogeneous‐homeotropic fluorescent liquid crystal cells [J. Appl. Phys. 52, 3949 (1981)]

R. W. Filas; M. M. Labes

J. Appl. Phys. 53, 1269 (1982) https://doi.org/10.1063/1.331655

View articletitled, Erratum: Homogeneous‐homeotropic fluorescent liquid crystal cells [J. Appl. Phys. 52, 3949 (1981)]

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Erratum: The complex‐dielectric constant of sea ice at frequencies in the range 0.1–40 GHz [J. Appl. Phys. 49, 1264 (1978)]

M. R. Vant; R. O. Ramseier; V. Makios

J. Appl. Phys. 53, 1269 (1982) https://doi.org/10.1063/1.331656

View articletitled, Erratum: The complex‐dielectric constant of sea ice at frequencies in the range 0.1–40 GHz [J. Appl. Phys. 49, 1264 (1978)]

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The early history of the scanning electron microscope

C. W. Oatley

J. Appl. Phys. 53, R1–R13 (1982) https://doi.org/10.1063/1.331666

Abstract

View articletitled, The early history of the scanning electron microscope

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