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Transient population distribution of SF6 gas excited by a CO2 laser
J. Appl. Phys. 52, 4915–4920 (1981)
https://doi.org/10.1063/1.329452
Influence of self‐absorption on output power characteristics of a high‐pressure cw CO2 laser
J. Appl. Phys. 52, 4953–4958 (1981)
https://doi.org/10.1063/1.329457
Performance of a N2/CO2 mixing laser by using a rapid mixing technique
J. Appl. Phys. 52, 4959–4961 (1981)
https://doi.org/10.1063/1.329433
An efficient singlet oxygen generator for chemically pumped iodine lasers
J. Appl. Phys. 52, 4962–4969 (1981)
https://doi.org/10.1063/1.329434
The effect of lateral carrier diffusion on the modulation response of a semiconductor laser
J. Appl. Phys. 52, 4970–4974 (1981)
https://doi.org/10.1063/1.329435
Temperature dependence of the reflectance of solid and liquid silicon
J. Appl. Phys. 52, 4975–4976 (1981)
https://doi.org/10.1063/1.329436
The diffusive wiggler—a spatially periodic magnetic pump for free‐electron lasers
J. Appl. Phys. 52, 4977–4981 (1981)
https://doi.org/10.1063/1.329437
Second‐harmonic generation in a graded‐density plasma containing a colloidal net
J. Appl. Phys. 52, 4982–4984 (1981)
https://doi.org/10.1063/1.329438
Laser heating of semiconductors—effect of carrier diffusion in nonlinear dynamic heat transport process
J. Appl. Phys. 52, 4995–5006 (1981)
https://doi.org/10.1063/1.329440
Interaction of CO2 laser pulses with solid targets in magnetic fields
J. Appl. Phys. 52, 5014–5023 (1981)
https://doi.org/10.1063/1.329443
Criteria for automatic x‐ray absorption fine structure background removal
J. Appl. Phys. 52, 5024–5031 (1981)
https://doi.org/10.1063/1.329444
Deep center characterization by optically‐controlled paramagnetic resonance in AgGaS2
J. Appl. Phys. 52, 5037–5042 (1981)
https://doi.org/10.1063/1.329446
Heteroepitaxial silicon growth on polycrystalline MoSi2
J. Appl. Phys. 52, 5043–5049 (1981)
https://doi.org/10.1063/1.329447
Stoichiometric disturbances in ion implanted compound semiconductors
J. Appl. Phys. 52, 5050–5055 (1981)
https://doi.org/10.1063/1.329448
Finite compressibility in shaped charge jet and long rod penetration—the effect of shocks
J. Appl. Phys. 52, 5066–5071 (1981)
https://doi.org/10.1063/1.329450
Interpretation of shock‐wave data for beryllium and uranium with an elastic‐viscoplastic constitutive model
J. Appl. Phys. 52, 5072–5083 (1981)
https://doi.org/10.1063/1.329458
Electrical measurements on fused quartz under shock compression
J. Appl. Phys. 52, 5084–5089 (1981)
https://doi.org/10.1063/1.329459
Gold gettering in silicon by phosphorous diffusion and argon implantation: Mechanisms and limitations
J. Appl. Phys. 52, 5090–5097 (1981)
https://doi.org/10.1063/1.329407
Laser annealing to produce ferroelectric‐phase PbTiO3 thin films
J. Appl. Phys. 52, 5107–5111 (1981)
https://doi.org/10.1063/1.329409
On the formation of binary compounds in Au/InP system
J. Appl. Phys. 52, 5112–5117 (1981)
https://doi.org/10.1063/1.329410
Deep level studies of Hg1−xCdx Te. I: Narrow‐band‐gap space‐charge spectroscopy
J. Appl. Phys. 52, 5118–5131 (1981)
https://doi.org/10.1063/1.329411
Deep level studies of Hg1−xCdxTe. II: Correlation with photodiode performance
J. Appl. Phys. 52, 5132–5138 (1981)
https://doi.org/10.1063/1.329412
In‐depth profiles of deep‐trap concentration in Fe‐implanted n‐type silicon
J. Appl. Phys. 52, 5143–5147 (1981)
https://doi.org/10.1063/1.329414
Carbon‐acceptor pair centers (X centers) in silicon
J. Appl. Phys. 52, 5148–5158 (1981)
https://doi.org/10.1063/1.329415
Deep level transient spectroscopy studies of trapping parameters for centers in indium‐doped silicon
J. Appl. Phys. 52, 5159–5163 (1981)
https://doi.org/10.1063/1.329416
Experimental determination of the phonon and electron components of the thermal conductivity of bcc iron
J. Appl. Phys. 52, 5167–5175 (1981)
https://doi.org/10.1063/1.329418
Electrical response of a copper‐Constantan sheet couple to shock compression up to 81 GPA
J. Appl. Phys. 52, 5176–5178 (1981)
https://doi.org/10.1063/1.329419
Experimental determination of minority‐carrier lifetime and recombination mechanisms in p‐type Hg1−xCdxTe
J. Appl. Phys. 52, 5182–5194 (1981)
https://doi.org/10.1063/1.329421
The interpretation of ohmic behavior in semi‐insulating gallium arsenide systems
J. Appl. Phys. 52, 5195–5201 (1981)
https://doi.org/10.1063/1.329422
Current‐voltage characteristics of AlxGa1−xAs Schottky barriers and p‐n junctions
J. Appl. Phys. 52, 5202–5206 (1981)
https://doi.org/10.1063/1.329423
Phthalocyanine organic solar cells: Indium/x‐metal free phthalocyanine Schottky barriers
J. Appl. Phys. 52, 5218–5230 (1981)
https://doi.org/10.1063/1.329425
Shallow PtSi‐Si Schottky barrier contacts formed by a multilayer metallization technique
J. Appl. Phys. 52, 5243–5246 (1981)
https://doi.org/10.1063/1.329428
The superposition principle for semiconductor‐electrolyte junction solar cells
J. Appl. Phys. 52, 5247–5249 (1981)
https://doi.org/10.1063/1.329429
Current‐voltage characteristics of low βc tunnel junctions with magnetically suppressed critical currents
J. Appl. Phys. 52, 5262–5267 (1981)
https://doi.org/10.1063/1.329382
Evaluation of hyperfine field distributions from Mössbauer spectra using Window’s Fourier method
J. Appl. Phys. 52, 5268–5273 (1981)
https://doi.org/10.1063/1.329432
Reflectance and optical constants of CdIn2Se4 crystals
J. Appl. Phys. 52, 5283–5285 (1981)
https://doi.org/10.1063/1.329384
Bounds on the transport and optical properties of a two‐component composite material
J. Appl. Phys. 52, 5294–5304 (1981)
https://doi.org/10.1063/1.329386
Thermionic emission from platinum in hydrocarbon flows at low pressure
J. Appl. Phys. 52, 5315–5319 (1981)
https://doi.org/10.1063/1.329389
Determining the field emitter temperature during laser irradiation in the pulsed laser atom probe
J. Appl. Phys. 52, 5320–5328 (1981)
https://doi.org/10.1063/1.329390
Microstructure and properties of rf‐sputtered amorphous hydrogenated silicon films
J. Appl. Phys. 52, 5329–5339 (1981)
https://doi.org/10.1063/1.329391
Properties of tungsten silicide film on polycrystalline silicon
J. Appl. Phys. 52, 5350–5355 (1981)
https://doi.org/10.1063/1.329393
Temperature dependence of the rate constants for three‐body quenching reactions in the KrF* laser system
J. Appl. Phys. 52, 5361–5364 (1981)
https://doi.org/10.1063/1.329395
Asymptotic formula for the resonant frequencies of a circular microstrip antenna
J. Appl. Phys. 52, 5365–5369 (1981)
https://doi.org/10.1063/1.329396
High‐temperature degradation of InGaAsP/InP light emitting diodes
J. Appl. Phys. 52, 5377–5380 (1981)
https://doi.org/10.1063/1.329398
Efficient injection locking of an e‐beam‐excited XeF laser
J. Appl. Phys. 52, 5383–5385 (1981)
https://doi.org/10.1063/1.329400
Longitudinal acoustic wave radiated from an arched interdigital transducer
J. Appl. Phys. 52, 5386–5388 (1981)
https://doi.org/10.1063/1.329401
Small‐angle x‐ray and electron scattering from (SN)x
J. Appl. Phys. 52, 5389–5391 (1981)
https://doi.org/10.1063/1.329402
Low‐temperature redistribution and gettering of oxygen in silicon
J. Appl. Phys. 52, 5392–5394 (1981)
https://doi.org/10.1063/1.329403
Double layer oxide film formation on elemental metals by anion interstitial diffusion
J. Appl. Phys. 52, 5397–5398 (1981)
https://doi.org/10.1063/1.329405
The effect of surface potential fluctuations on surface photovoltage in metal‐oxide‐semiconductor structures
J. Appl. Phys. 52, 5399–5400 (1981)
https://doi.org/10.1063/1.329406
A step-by-step guide to perform x-ray photoelectron spectroscopy
Grzegorz Greczynski, Lars Hultman
Machine learning for thermal transport
Ruiqiang Guo, Bing-Yang Cao, et al.