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Elastic wave scattering by a flaw in an isotropic, homogeneous solid

George A. Baker, Jr.; J. L. Gammel

J. Appl. Phys. 52, 3729–3737 (1981) https://doi.org/10.1063/1.329833

Abstract

View articletitled, Elastic wave scattering by a flaw in an isotropic, homogeneous solid

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Melting temperature and periodicity

L. G. Van Uitert

J. Appl. Phys. 52, 3738–3741 (1981) https://doi.org/10.1063/1.329834

Abstract

View articletitled, Melting temperature and periodicity

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Power considerations in the operation of a piston fitted inside a cylinder containing a dynamically heated working fluid

Boris M. Aizenbud; Yehuda B. Band

J. Appl. Phys. 52, 3742–3744 (1981) https://doi.org/10.1063/1.329835

Abstract

View articletitled, Power considerations in the operation of a piston fitted inside a cylinder containing a dynamically heated working fluid

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Optimal heating of the working fluid in a cylinder equipped with a moving piston

Yehuda B. Band; Oded Kafri; Peter Salamon

J. Appl. Phys. 52, 3745–3749 (1981) https://doi.org/10.1063/1.329836

Abstract

View articletitled, Optimal heating of the working fluid in a cylinder equipped with a moving piston

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Experimental investigations of micellar systems

H. Bohidar; S. Chopra

J. Appl. Phys. 52, 3750–3752 (1981) https://doi.org/10.1063/1.329837

Abstract

View articletitled, Experimental investigations of micellar systems

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Electron momentum distribution, velocity space instability, and angular momentum in relativistic large aspect ratio diodes

G. Hazak; Y. Zarmi; Z. Zinamon

J. Appl. Phys. 52, 3753–3760 (1981) https://doi.org/10.1063/1.329838

Abstract

View articletitled, Electron momentum distribution, velocity space instability, and angular momentum in relativistic large aspect ratio diodes

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An injector based on electric insulation for the controlled ballistic focusing of light ion beams

D. A. Phelps; W. W. Salisbury; S. Jorna

J. Appl. Phys. 52, 3761–3768 (1981) https://doi.org/10.1063/1.329839

Abstract

View articletitled, An injector based on electric insulation for the controlled ballistic focusing of light ion beams

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Optical oscillator strengths for the chlorine isoelectronic sequence

P. S. Ganas

J. Appl. Phys. 52, 3769–3771 (1981) https://doi.org/10.1063/1.329840

Abstract

View articletitled, Optical oscillator strengths for the chlorine isoelectronic sequence

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Pressure measurement at high temperatures in the diamond anvil cell

Stephanie L. Wunder; Paul E. Schoen

J. Appl. Phys. 52, 3772–3775 (1981) https://doi.org/10.1063/1.329841

Abstract

View articletitled, Pressure measurement at high temperatures in the diamond anvil cell

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Electron collision quenching of CO(v) chemiluminescence in CS₂/O₂ and CS₂/O₂/N₂O flames

M. J. Kushner; W. M. Grossman; F. E. C. Culick

J. Appl. Phys. 52, 3776–3779 (1981) https://doi.org/10.1063/1.329215

Abstract

View articletitled, Electron collision quenching of CO(v) chemiluminescence in CS2/O2 and CS2/O2/N2O flames

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Space‐charge aberrations in the photoelectron microscope

G. A. Massey; M. D. Jones; B. P. Plummer

J. Appl. Phys. 52, 3780–3786 (1981) https://doi.org/10.1063/1.329216

Abstract

View articletitled, Space‐charge aberrations in the photoelectron microscope

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Ion beam extraction from a plasma with aberration reduction by method of mutual exclusion

J. H. Whealton; R. W. McGaffey; W. L. Stirling

J. Appl. Phys. 52, 3787–3790 (1981) https://doi.org/10.1063/1.329217

Abstract

View articletitled, Ion beam extraction from a plasma with aberration reduction by method of mutual exclusion

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Laser cooling of heavy‐ion beams

Paul J. Channell

J. Appl. Phys. 52, 3791–3793 (1981) https://doi.org/10.1063/1.329218

Abstract

View articletitled, Laser cooling of heavy‐ion beams

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The diocotron instability in annular relativistic electron beams

Michael E. Jones; Michael A. Mostrom

J. Appl. Phys. 52, 3794–3799 (1981) https://doi.org/10.1063/1.329842

Abstract

View articletitled, The diocotron instability in annular relativistic electron beams

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The picosecond ultrashort cavity dye laser: Giant pulse analogy and active étalon model

John A. Duncanson, Jr.; Walter S. Struve

J. Appl. Phys. 52, 3800–3820 (1981) https://doi.org/10.1063/1.329843

Abstract

View articletitled, The picosecond ultrashort cavity dye laser: Giant pulse analogy and active étalon model

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Assignment of the ⁷Li₂ optically pumped laser transitions pumped by Ar⁺ and Kr⁺ laser lines

K. K. Verma; W. C. Stwalley; W. T. Zemke

J. Appl. Phys. 52, 3821–3826 (1981) https://doi.org/10.1063/1.329844

Abstract

View articletitled, Assignment of the 7Li2 optically pumped laser transitions pumped by Ar+ and Kr+ laser lines

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Method for determining effective nonradiative lifetime and leakage losses in double‐heterostructure lasers

C. van Opdorp; G. W. ’t Hooft

J. Appl. Phys. 52, 3827–3839 (1981) https://doi.org/10.1063/1.329845

Abstract

View articletitled, Method for determining effective nonradiative lifetime and leakage losses in double‐heterostructure lasers

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Very low threshold‐current temperature sensitivity in constricted double‐heterojunction AlGaAs lasers

D. Botez; J. C. Connolly; D. B. Gilbert; M. Ettenberg

J. Appl. Phys. 52, 3840–3844 (1981) https://doi.org/10.1063/1.329846

Abstract

View articletitled, Very low threshold‐current temperature sensitivity in constricted double‐heterojunction AlGaAs lasers

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On the spatial mode stability of oxide stripe cw lasers during accelerated aging at 70 °C

M. Ettenberg

J. Appl. Phys. 52, 3845–3848 (1981) https://doi.org/10.1063/1.329847

Abstract

View articletitled, On the spatial mode stability of oxide stripe cw lasers during accelerated aging at 70 °C

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e‐beam preionized mercury bromide dissociation laser

R. Burnham; W. T. Whitney

J. Appl. Phys. 52, 3849–3850 (1981) https://doi.org/10.1063/1.329848

Abstract

View articletitled, e‐beam preionized mercury bromide dissociation laser

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Helium breakdown by DF laser radiation

D. B. Nichols; R. B. Hall

J. Appl. Phys. 52, 3851–3854 (1981) https://doi.org/10.1063/1.329849

Abstract

View articletitled, Helium breakdown by DF laser radiation

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UV sustained CO laser discharge I. Photoionization studies

D. R. Suhre

J. Appl. Phys. 52, 3855–3857 (1981) https://doi.org/10.1063/1.329850

Abstract

View articletitled, UV sustained CO laser discharge I. Photoionization studies

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UV‐sustained CO laser discharge II. Discharge studies

D. R. Suhre; S. A. Wutzke

J. Appl. Phys. 52, 3858–3860 (1981) https://doi.org/10.1063/1.329851

Abstract

View articletitled, UV‐sustained CO laser discharge II. Discharge studies

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Al_0.48In_0.52 As/Ga_0.47In_0.53 As/Al_0.48In_0.52As double‐heterostructure lasers grown by molecular‐beam epitaxy with lasing wavelength at 1.65 μm

W. T. Tsang

J. Appl. Phys. 52, 3861–3864 (1981) https://doi.org/10.1063/1.329852

Abstract

View articletitled, Al0.48In0.52 As/Ga0.47In0.53 As/Al0.48In0.52As double‐heterostructure lasers grown by molecular‐beam epitaxy with lasing wavelength at 1.65 μm

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Optical fiber interferometers with [3×3] directional couplers: Analysis

Sang K. Sheem

J. Appl. Phys. 52, 3865–3872 (1981) https://doi.org/10.1063/1.329853

Abstract

View articletitled, Optical fiber interferometers with [3×3] directional couplers: Analysis

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Extremely low‐loss glass thin‐film optical waveguides utilizing surface coating and laser annealing

Subhadra Dutta; Howard E. Jackson; J. T. Boyd

J. Appl. Phys. 52, 3873–3875 (1981) https://doi.org/10.1063/1.329854

Abstract

View articletitled, Extremely low‐loss glass thin‐film optical waveguides utilizing surface coating and laser annealing

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Heat regeneration in Malone‐type liquid engines using a parallel‐plate thermodynamic pile geometry

P. C. Allen; G. H. Fisher; W. R. Knight; D. N. Paulson; J. C. Wheatley

J. Appl. Phys. 52, 3876–3883 (1981) https://doi.org/10.1063/1.329855

Abstract

View articletitled, Heat regeneration in Malone‐type liquid engines using a parallel‐plate thermodynamic pile geometry

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Dynamic computer simulation of viscous flow sintering kinetics

J. W. Ross; W. A. Miller; G. C. Weatherly

J. Appl. Phys. 52, 3884–3888 (1981) https://doi.org/10.1063/1.329235

Abstract

View articletitled, Dynamic computer simulation of viscous flow sintering kinetics

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Temporal and radial dependence of laser action in a He‐Hg pulsed discharge

H. Ninomiya

J. Appl. Phys. 52, 3889–3891 (1981) https://doi.org/10.1063/1.329236

Abstract

View articletitled, Temporal and radial dependence of laser action in a He‐Hg pulsed discharge

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Excitation mechanism of positive column He‐Te laser transitions

P. K. Boyer; G. J. Collins

J. Appl. Phys. 52, 3892–3901 (1981) https://doi.org/10.1063/1.329237

Abstract

View articletitled, Excitation mechanism of positive column He‐Te laser transitions

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Effects of dispersion on the radiation of ion acoustic waves

Mehyar Khazei; Brian Nelson; Chung Chan; Karl E. Lonngren

J. Appl. Phys. 52, 3902–3904 (1981) https://doi.org/10.1063/1.329238

Abstract

View articletitled, Effects of dispersion on the radiation of ion acoustic waves

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H⁻ ion formation from a surface conversion type ion source

K. N. Leung; K. W. Ehlers

J. Appl. Phys. 52, 3905–3911 (1981) https://doi.org/10.1063/1.329239

Abstract

View articletitled, H− ion formation from a surface conversion type ion source

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Breakdown field strength of SF₆, N₂O, SF₆+N₂, and SF₆+N₂O

G. R. Govinda Raju; R. Hackam

J. Appl. Phys. 52, 3912–3920 (1981) https://doi.org/10.1063/1.329240

Abstract

View articletitled, Breakdown field strength of SF6, N2O, SF6+N2, and SF6+N2O

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A derivation of Warburg’s law for point to plane coronas

Bob L. Henson

J. Appl. Phys. 52, 3921–3923 (1981) https://doi.org/10.1063/1.329241

Abstract

View articletitled, A derivation of Warburg’s law for point to plane coronas

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Theoretical quantities of some parameters in the cathode‐fall region of a copper vacuum arc

Takayoshi Kubono

J. Appl. Phys. 52, 3924–3928 (1981) https://doi.org/10.1063/1.329196

Abstract

View articletitled, Theoretical quantities of some parameters in the cathode‐fall region of a copper vacuum arc

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Method of indirect determination of the anodic and cathodic voltage drops in short high‐current electric discharges in a dielectric liquid

C. Lhiaubet; R. M. Meyer

J. Appl. Phys. 52, 3929–3934 (1981) https://doi.org/10.1063/1.329197

Abstract

View articletitled, Method of indirect determination of the anodic and cathodic voltage drops in short high‐current electric discharges in a dielectric liquid

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Modelling strain distributions in ion‐implanted magnetic bubble materials

B. E. MacNeal; V. S. Speriosu

J. Appl. Phys. 52, 3935–3940 (1981) https://doi.org/10.1063/1.329198

Abstract

View articletitled, Modelling strain distributions in ion‐implanted magnetic bubble materials

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Multicolor fluorescent display by scattering states in liquid crystals

S. Sato; M. M. Labes

J. Appl. Phys. 52, 3941–3948 (1981) https://doi.org/10.1063/1.329199

Abstract

View articletitled, Multicolor fluorescent display by scattering states in liquid crystals

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Homogeneous‐homeotropic fluorescent liquid crystal cells

R. W. Filas; M. M. Labes

J. Appl. Phys. 52, 3949–3953 (1981) https://doi.org/10.1063/1.329200

Abstract

View articletitled, Homogeneous‐homeotropic fluorescent liquid crystal cells

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As‐implanted and redistributed annealed depth distributions, range‐energy data, and shape factors for Cr implanted into crystalline GaAs and Si

Robert G. Wilson

J. Appl. Phys. 52, 3954–3959 (1981) https://doi.org/10.1063/1.329201

Abstract

View articletitled, As‐implanted and redistributed annealed depth distributions, range‐energy data, and shape factors for Cr implanted into crystalline GaAs and Si

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Grain boundary recombination: Theory and experiment in silicon

C. H. Seager

J. Appl. Phys. 52, 3960–3968 (1981) https://doi.org/10.1063/1.329202

Abstract

View articletitled, Grain boundary recombination: Theory and experiment in silicon

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A nondestructive method to determine the stress distributions of neon‐implanted garnet layers

W. H. de Roode; J. W. Smits

J. Appl. Phys. 52, 3969–3973 (1981) https://doi.org/10.1063/1.329203

Abstract

View articletitled, A nondestructive method to determine the stress distributions of neon‐implanted garnet layers

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Precipitation of oxygen in silicon: Some phenomena and a nucleation model

S. M. Hu

J. Appl. Phys. 52, 3974–3984 (1981) https://doi.org/10.1063/1.329204

Abstract

View articletitled, Precipitation of oxygen in silicon: Some phenomena and a nucleation model

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Channeling of 20–800‐keV arsenic ions in the 〈110〉 and the 〈100〉 directions of silicon, and the roles of electronic and nuclear stopping

R. G. Wilson

J. Appl. Phys. 52, 3985–3988 (1981) https://doi.org/10.1063/1.329205

Abstract

View articletitled, Channeling of 20–800‐keV arsenic ions in the 〈110〉 and the 〈100〉 directions of silicon, and the roles of electronic and nuclear stopping

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Characterization of polished (111) silicon crystal surface by diffuse x‐ray scattering

S. Yasuami; J. Harada

J. Appl. Phys. 52, 3989–3991 (1981) https://doi.org/10.1063/1.329206

Abstract

View articletitled, Characterization of polished (111) silicon crystal surface by diffuse x‐ray scattering

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Internal friction peaks in cold‐worked and hydrogen‐charged nickel

K. Tanaka; H. Ryonai; M. Yamada

J. Appl. Phys. 52, 3992–3999 (1981) https://doi.org/10.1063/1.329207

Abstract

View articletitled, Internal friction peaks in cold‐worked and hydrogen‐charged nickel

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The use of Manganin gauges in shock reverberation experiments

Z. Rosenberg

J. Appl. Phys. 52, 4000–4002 (1981) https://doi.org/10.1063/1.329208

Abstract

View articletitled, The use of Manganin gauges in shock reverberation experiments

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Transition temperatures and heats of crystallization of amorphous Ge, Si, and Ge_1−xSi_x alloys determined by scanning calorimetry

John C. C. Fan; Carl H. Anderson, Jr.

J. Appl. Phys. 52, 4003–4006 (1981) https://doi.org/10.1063/1.329209

Abstract

View articletitled, Transition temperatures and heats of crystallization of amorphous Ge, Si, and Ge1−xSix alloys determined by scanning calorimetry

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Trapping of Sb by TaC and Cu precipitates in ion‐implanted Fe

S. M. Myers; D. M. Follstaedt

J. Appl. Phys. 52, 4007–4017 (1981) https://doi.org/10.1063/1.329210

Abstract

View articletitled, Trapping of Sb by TaC and Cu precipitates in ion‐implanted Fe

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Structural and photoluminescent properties of Ga_xIn_1−xP(x≊0.5) grown on GaAs by molecular beam epitaxy

J. S. Roberts; G. B. Scott; J. P. Gowers

J. Appl. Phys. 52, 4018–4026 (1981) https://doi.org/10.1063/1.329211

Abstract

View articletitled, Structural and photoluminescent properties of GaxIn1−xP(x≊0.5) grown on GaAs by molecular beam epitaxy

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The effect of phosphorus ion implantation on molybdenum/silicon contacts

S. W. Chiang; T. P. Chow; R. F. Reihl; K. L. Wang

J. Appl. Phys. 52, 4027–4032 (1981) https://doi.org/10.1063/1.329268

Abstract

View articletitled, The effect of phosphorus ion implantation on molybdenum/silicon contacts

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GaInAs‐AlInAs structures grown by molecular beam epitaxy

H. Ohno; C. E. C. Wood; L. Rathbun; D. V. Morgan; G. W. Wicks; L. F. Eastman

J. Appl. Phys. 52, 4033–4037 (1981) https://doi.org/10.1063/1.329212

Abstract

View articletitled, GaInAs‐AlInAs structures grown by molecular beam epitaxy

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Ion implantation and low‐temperature epitaxial regrowth of GaAs

M. G. Grimaldi; B. M. Paine; M‐A. Nicolet; D. K. Sadana

J. Appl. Phys. 52, 4038–4046 (1981) https://doi.org/10.1063/1.329213

Abstract

View articletitled, Ion implantation and low‐temperature epitaxial regrowth of GaAs

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Gold‐aluminum thin‐film interactions and compound formation

G. Majni; C. Nobili; G. Ottaviani; M. Costato; E. Galli

J. Appl. Phys. 52, 4047–4054 (1981) https://doi.org/10.1063/1.329214

Abstract

View articletitled, Gold‐aluminum thin‐film interactions and compound formation

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Compounds in the Pd‐Si and Pt‐Si system obtained by electron bombardment and post‐thermal annealing

G. Majni; F. Nava; G. Ottaviani; E. Danna; G. Leggieri; A. Luches; G. Celotti

J. Appl. Phys. 52, 4055–4061 (1981) https://doi.org/10.1063/1.329253

Abstract

View articletitled, Compounds in the Pd‐Si and Pt‐Si system obtained by electron bombardment and post‐thermal annealing

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A study of Ge/GaAs interfaces grown by molecular beam epitaxy

R. A. Stall; C. E. C. Wood; K. Board; N. Dandekar; L. F. Eastman; J. Devlin

J. Appl. Phys. 52, 4062–4069 (1981) https://doi.org/10.1063/1.329254

Abstract

View articletitled, A study of Ge/GaAs interfaces grown by molecular beam epitaxy

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Neutron transmutation doping of silicon and other semiconducting materials

Hans J. Hoffmann

J. Appl. Phys. 52, 4070–4074 (1981) https://doi.org/10.1063/1.329255

Abstract

View articletitled, Neutron transmutation doping of silicon and other semiconducting materials

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Disappearance of impurity levels in silicon and germanium due to screening

J. R. Lowney; A. H. Kahn; J. L. Blue; C. L. Wilson

J. Appl. Phys. 52, 4075–4080 (1981) https://doi.org/10.1063/1.329256

Abstract

View articletitled, Disappearance of impurity levels in silicon and germanium due to screening

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Isothermal and thermally stimulated current studies of positively corona charged polyfluoroethylenepropylene (Teflon FEP)

Heinz von Seggern

J. Appl. Phys. 52, 4081–4085 (1981) https://doi.org/10.1063/1.329257

Abstract

View articletitled, Isothermal and thermally stimulated current studies of positively corona charged polyfluoroethylenepropylene (Teflon FEP)

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Detection of surface and bulk traps

Heinz von Seggern

J. Appl. Phys. 52, 4086–4089 (1981) https://doi.org/10.1063/1.329258

Abstract

View articletitled, Detection of surface and bulk traps

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Characterization of electron traps in SiO₂ as influenced by processing parameters

D. R. Young

J. Appl. Phys. 52, 4090–4094 (1981) https://doi.org/10.1063/1.329259

Abstract

View articletitled, Characterization of electron traps in SiO2 as influenced by processing parameters

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Electrical transport properties of p‐type Pb_1−xCd_xTe thin films

A.L. Dawar; O. P. Taneja; A. D. Sen; P. C. Mathur

J. Appl. Phys. 52, 4095–4097 (1981) https://doi.org/10.1063/1.329260

Abstract

View articletitled, Electrical transport properties of p‐type Pb1−xCdxTe thin films

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Electron transport across the abrupt Ge‐GaAs n‐n heterojunction

J. M. Ballingall; R. A. Stall; C. E. C. Wood; L. F. Eastman

J. Appl. Phys. 52, 4098–4103 (1981) https://doi.org/10.1063/1.329261

Abstract

View articletitled, Electron transport across the abrupt Ge‐GaAs n‐n heterojunction

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Current instability phenomena in ZnO varistors under a continuous ac stress

T. K. Gupta; W. G. Carlson; P. L. Hower

J. Appl. Phys. 52, 4104–4111 (1981) https://doi.org/10.1063/1.329262

Abstract

View articletitled, Current instability phenomena in ZnO varistors under a continuous ac stress

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The behavior of dislocations in GaAs substrates during the growth of Ga_xAl_1−xAs epitaxial layers

H. Booyens; J. H. Basson; M. B. Small

J. Appl. Phys. 52, 4112–4114 (1981) https://doi.org/10.1063/1.329263

Abstract

View articletitled, The behavior of dislocations in GaAs substrates during the growth of GaxAl1−xAs epitaxial layers

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An oxygen‐sensitive electrode impedance in Sr‐doped LaCrO₃

J. Bethin; C. K. Chiang; A. D. Franklin; R. A. Snellgrove

J. Appl. Phys. 52, 4115–4117 (1981) https://doi.org/10.1063/1.329219

Abstract

View articletitled, An oxygen‐sensitive electrode impedance in Sr‐doped LaCrO3

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Ion beam oxidation

J. M. E. Harper; M. Heiblum; J. L. Speidell; J. J. Cuomo

J. Appl. Phys. 52, 4118–4121 (1981) https://doi.org/10.1063/1.329220

Abstract

View articletitled, Ion beam oxidation

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Influence of oxidation parameters on atomic roughness at the Si‐SiO₂ interface

P. O. Hahn; M. Henzler

J. Appl. Phys. 52, 4122–4127 (1981) https://doi.org/10.1063/1.329221

Abstract

View articletitled, Influence of oxidation parameters on atomic roughness at the Si‐SiO2 interface

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Conduction mechanisms and 1/f noise in thick‐film resistors with Pb₃Rh₇O₁₅and Pb ₂Ru₂O₇

W. H. de Jeu; R. W. J. Geuskens; G. E. Pike

J. Appl. Phys. 52, 4128–4134 (1981) https://doi.org/10.1063/1.329222

Abstract

View articletitled, Conduction mechanisms and 1/f noise in thick‐film resistors with Pb3Rh7O15and Pb 2Ru2O7

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Voltage locking between superconducting weak links via impedance coupling

Yuan‐Dong Dai; Y. H. Kao

J. Appl. Phys. 52, 4135–4144 (1981) https://doi.org/10.1063/1.329223

Abstract

View articletitled, Voltage locking between superconducting weak links via impedance coupling

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Simulation of I‐V curves of small Josephson tunnel junctions with finite capacitance

D. E. Prober; S. E. G. Slusky; R. W. Henry

J. Appl. Phys. 52, 4145–4149 (1981) https://doi.org/10.1063/1.329224

Abstract

View articletitled, Simulation of I‐V curves of small Josephson tunnel junctions with finite capacitance

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Analysis on dc characteristics of Josephson structures by the one‐dimensional Green’s function method

Masanori Sugahara

J. Appl. Phys. 52, 4150–4155 (1981) https://doi.org/10.1063/1.329225

Abstract

View articletitled, Analysis on dc characteristics of Josephson structures by the one‐dimensional Green’s function method

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A study of the magnetic, thermal, and optical absorption properties in Ho(OH)₃ crystal

S. Karmakar; M. Saha; D. Ghosh

J. Appl. Phys. 52, 4156–4161 (1981) https://doi.org/10.1063/1.329226

Abstract

View articletitled, A study of the magnetic, thermal, and optical absorption properties in Ho(OH)3 crystal

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Magnetic properties and electrical resistivity of Ho‐Sm alloys at low temperatures

Ali Y. Amin

J. Appl. Phys. 52, 4162–4164 (1981) https://doi.org/10.1063/1.329227

Abstract

View articletitled, Magnetic properties and electrical resistivity of Ho‐Sm alloys at low temperatures

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Experimental observation of surface modes along two parallel‐axially magnetized ferrite rods

Toshimi Meiri; Shizuo Mizushina

J. Appl. Phys. 52, 4165–4169 (1981) https://doi.org/10.1063/1.329228

Abstract

View articletitled, Experimental observation of surface modes along two parallel‐axially magnetized ferrite rods

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Measurement of Fe‐Ga ion interchange by pulsed laser heating and fast cooling of magnetic bubble films

B. Petek; E. A. Giess; R. T. Hodgson

J. Appl. Phys. 52, 4170–4175 (1981) https://doi.org/10.1063/1.329229

Abstract

View articletitled, Measurement of Fe‐Ga ion interchange by pulsed laser heating and fast cooling of magnetic bubble films

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Dynamic Bloch‐line stacking—A new domain‐wall structure at high drives

J. Żebrowski; A. Sukiennicki

J. Appl. Phys. 52, 4176–4180 (1981) https://doi.org/10.1063/1.329230

Abstract

View articletitled, Dynamic Bloch‐line stacking—A new domain‐wall structure at high drives

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Electrothermal breakdown: Analytic solutions for currents and fields

H. J. Wintle

J. Appl. Phys. 52, 4181–4185 (1981) https://doi.org/10.1063/1.329231

Abstract

View articletitled, Electrothermal breakdown: Analytic solutions for currents and fields

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Internal breakdown in a dielectric target at high laser irradiance

R. Fedosejevs; Yung‐lu Teng; R. Sigel; K. Eidmann; R. Petsch

J. Appl. Phys. 52, 4186–4188 (1981) https://doi.org/10.1063/1.329232

Abstract

View articletitled, Internal breakdown in a dielectric target at high laser irradiance

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Electroreflectance studies in Cd_1−xMn_xTe solid solutions

N. Bottka; J. Stankiewicz; W. Giriat

J. Appl. Phys. 52, 4189–4193 (1981) https://doi.org/10.1063/1.329233

Abstract

View articletitled, Electroreflectance studies in Cd1−xMnxTe solid solutions

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Theory of the photothermal radiometry with solids

R. Santos; L. C. M. Miranda

J. Appl. Phys. 52, 4194–4198 (1981) https://doi.org/10.1063/1.329234

Abstract

View articletitled, Theory of the photothermal radiometry with solids

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Determination of the electrooptic coefficients of 3‐methyl 4‐nitropyridine 1‐oxide by an interferometric phase‐modulation technique

M. Sigelle; R. Hierle

J. Appl. Phys. 52, 4199–4204 (1981) https://doi.org/10.1063/1.329269

Abstract

View articletitled, Determination of the electrooptic coefficients of 3‐methyl 4‐nitropyridine 1‐oxide by an interferometric phase‐modulation technique

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Radiative cooling to low temperatures: General considerations and application to selectively emitting SiO films

C. G. Granqvist; A. Hjortsberg

J. Appl. Phys. 52, 4205–4220 (1981) https://doi.org/10.1063/1.329270

Abstract

View articletitled, Radiative cooling to low temperatures: General considerations and application to selectively emitting SiO films

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Radiative transfer theory for active remote sensing of a homogenous layer containing spherical scatterers

R. T. Shin; J. A. Kong

J. Appl. Phys. 52, 4221–4230 (1981) https://doi.org/10.1063/1.329271

Abstract

View articletitled, Radiative transfer theory for active remote sensing of a homogenous layer containing spherical scatterers

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Optical properties of polycrystalline CdTe films

T. H. Myers; S. W. Edwards; J. F. Schetzina

J. Appl. Phys. 52, 4231–4237 (1981) https://doi.org/10.1063/1.329272

Abstract

View articletitled, Optical properties of polycrystalline CdTe films

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Absorption of high‐intensity CO₂ laser light in p‐type semiconductors with small spin‐orbit splittings

R. B. James; D. L. Smith

J. Appl. Phys. 52, 4238–4240 (1981) https://doi.org/10.1063/1.329273

Abstract

View articletitled, Absorption of high‐intensity CO2 laser light in p‐type semiconductors with small spin‐orbit splittings

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Photoluminescence in the amorphous system SiO_x

R. Carius; R. Fischer; E. Holzenkämpfer; J. Stuke

J. Appl. Phys. 52, 4241–4243 (1981) https://doi.org/10.1063/1.329274

Abstract

View articletitled, Photoluminescence in the amorphous system SiOx

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Thermoluminescence studies of LiF (TLD‐100) in the temperature interval 10–300 K

D. Wayne Cooke; Joanne F. Rhodes

J. Appl. Phys. 52, 4244–4247 (1981) https://doi.org/10.1063/1.329275

Abstract

View articletitled, Thermoluminescence studies of LiF (TLD‐100) in the temperature interval 10–300 K

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Ejection of atoms by laser produced optical breakdown plasma

M. R. Wang; H. C. Meng

J. Appl. Phys. 52, 4248–4250 (1981) https://doi.org/10.1063/1.329276

Abstract

View articletitled, Ejection of atoms by laser produced optical breakdown plasma

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A molecular dynamics simulation study of the influence of the ion mass upon atom ejection processes

Don E. Harrison, Jr.

J. Appl. Phys. 52, 4251–4258 (1981) https://doi.org/10.1063/1.329277

Abstract

View articletitled, A molecular dynamics simulation study of the influence of the ion mass upon atom ejection processes

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The theoretical treatment of range distributions of energetic light ions injected into a semi‐infinite random target

Steen Fedder; Uffe Littmark

J. Appl. Phys. 52, 4259–4265 (1981) https://doi.org/10.1063/1.329278

Abstract

View articletitled, The theoretical treatment of range distributions of energetic light ions injected into a semi‐infinite random target

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The dynamic effects of a thin metal plate during pulse heating and expansion into the liquid‐vapor region

Richard C. Baxter; Warren H. Giedt; Lawrence W. Woodruff

J. Appl. Phys. 52, 4266–4275 (1981) https://doi.org/10.1063/1.329279

Abstract

View articletitled, The dynamic effects of a thin metal plate during pulse heating and expansion into the liquid‐vapor region

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The role of plasma diffusion in heat dissipation during laser annealing

L. Jastrzebski; A. E. Bell; C. P. Wu; P. J. Zanzucchi

J. Appl. Phys. 52, 4276–4280 (1981) https://doi.org/10.1063/1.329280

Abstract

View articletitled, The role of plasma diffusion in heat dissipation during laser annealing

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Induced molecular transport due to surface acoustic waves

Paul Terry; M. W. P. Strandberg

J. Appl. Phys. 52, 4281–4287 (1981) https://doi.org/10.1063/1.329281

Abstract

View articletitled, Induced molecular transport due to surface acoustic waves

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Tunneling solar cell under concentrated light illumination

A. Myszkowski; L. E. Sansores; J. Tagüeña‐Martínez

J. Appl. Phys. 52, 4288–4296 (1981) https://doi.org/10.1063/1.329282

Abstract

View articletitled, Tunneling solar cell under concentrated light illumination

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Thermal stability of titanium nitride for shallow junction solar cell contacts

N. W. Cheung; H. von Seefeld; M‐A. Nicolet; F. Ho; P. Iles

J. Appl. Phys. 52, 4297–4299 (1981) https://doi.org/10.1063/1.329283

Abstract

View articletitled, Thermal stability of titanium nitride for shallow junction solar cell contacts

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Discrimination between 1/f noise models in junctions field effect transistors and metal‐oxide‐semiconductor field effect transistors: Numerical results

A. van der Ziel; R. J. J. Zijlstra; H. S. Park

J. Appl. Phys. 52, 4300–4304 (1981) https://doi.org/10.1063/1.329242

Abstract

View articletitled, Discrimination between 1/f noise models in junctions field effect transistors and metal‐oxide‐semiconductor field effect transistors: Numerical results

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The effect of sea level cosmic rays on electronic devices

J. F. Ziegler; W. A. Lanford

J. Appl. Phys. 52, 4305–4312 (1981) https://doi.org/10.1063/1.329243

Abstract

View articletitled, The effect of sea level cosmic rays on electronic devices

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Sensitivity analysis of a resonant mass gravitational wave antenna with resonant transducer

P. F. Michelson; R. C. Taber

J. Appl. Phys. 52, 4313–4319 (1981) https://doi.org/10.1063/1.329244

Abstract

View articletitled, Sensitivity analysis of a resonant mass gravitational wave antenna with resonant transducer

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The radius and the electric field of a free‐burning discharge in argon

J.‐N. Séguin; Jaroslav P. Novak

J. Appl. Phys. 52, 4320–4321 (1981) https://doi.org/10.1063/1.329245

Abstract

View articletitled, The radius and the electric field of a free‐burning discharge in argon

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Channeling effect measurements in Si by using resonant nuclear backscattering of 18–19‐MeV α particles

H. Kudo; K. Takita; K. Masuda; S. Seki

J. Appl. Phys. 52, 4322–4324 (1981) https://doi.org/10.1063/1.329246

Abstract

View articletitled, Channeling effect measurements in Si by using resonant nuclear backscattering of 18–19‐MeV α particles

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Peltier‐induced liquid phase epitaxy and compositional control of mm‐thick layers of (Al,Ga)As

J. J. Daniele; A. J. Hebling

J. Appl. Phys. 52, 4325–4327 (1981) https://doi.org/10.1063/1.329247

Abstract

View articletitled, Peltier‐induced liquid phase epitaxy and compositional control of mm‐thick layers of (Al,Ga)As

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Misfit dislocations and the morphology of gallium aluminum arsenide epitaxial layers grown on gallium arsenide

H. Booyens; M. B. Small; R. M. Potemski; J. H. Basson

J. Appl. Phys. 52, 4328–4329 (1981) https://doi.org/10.1063/1.329248

Abstract

View articletitled, Misfit dislocations and the morphology of gallium aluminum arsenide epitaxial layers grown on gallium arsenide

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Comment on ’’The general critical state model in two dimensions and zero applied field: A uniqueness theorem and some consequences’’

J. Baixeras; Ph. Dubernet; G. Fournet; T. Pech

J. Appl. Phys. 52, 4330–4332 (1981) https://doi.org/10.1063/1.329249

Abstract

View articletitled, Comment on ’’The general critical state model in two dimensions and zero applied field: A uniqueness theorem and some consequences’’

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Reply to ’’Comment on ’The general critical state model in two dimensions and zero applied field: A uniqueness theorem and some consequences’ ’’

A. Migliori; W. A. Beyer; G. Milton Wing

J. Appl. Phys. 52, 4333 (1981) https://doi.org/10.1063/1.329250

Abstract

View articletitled, Reply to ’’Comment on ’The general critical state model in two dimensions and zero applied field: A uniqueness theorem and some consequences’ ’’

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A new characterization parameter for hydrogenated amorphous silicon: B (the square of the gradient of the (αh/ω)^1/2 versus h/ω plot)

I. Sakata; Y. Hayashi; M. Yamanaka; H. Karasawa

J. Appl. Phys. 52, 4334–4336 (1981) https://doi.org/10.1063/1.329267

Abstract

View articletitled, A new characterization parameter for hydrogenated amorphous silicon: B (the square of the gradient of the (αh/ω)1/2 versus h/ω plot)

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Comments on ’’Raman scattering from boron‐implanted laser annealed silicon’’

Richard A. Forman; Michael I. Bell; David R. Myers

J. Appl. Phys. 52, 4337–4339 (1981) https://doi.org/10.1063/1.329251

Abstract

View articletitled, Comments on ’’Raman scattering from boron‐implanted laser annealed silicon’’

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Reply to ’’Comments on ’Raman scattering from boron‐implanted laser annealed silicon’ ’’

Herbert Engstrom; J. B. Bates

J. Appl. Phys. 52, 4340 (1981) https://doi.org/10.1063/1.329252

Abstract

View articletitled, Reply to ’’Comments on ’Raman scattering from boron‐implanted laser annealed silicon’ ’’

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Cathodoluminescence from defects in indented MgO

J. Piqueras; J. Llopis; L. Delgado

J. Appl. Phys. 52, 4341–4344 (1981) https://doi.org/10.1063/1.329264

Abstract

View articletitled, Cathodoluminescence from defects in indented MgO

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Optimum design for window layer thickness of GaAlAs‐GaAs heteroface solar cell regarding the effect of reflection loss

Akihiko Yoshikawa; Haruo Kasai

J. Appl. Phys. 52, 4345–4347 (1981) https://doi.org/10.1063/1.329265

Abstract

View articletitled, Optimum design for window layer thickness of GaAlAs‐GaAs heteroface solar cell regarding the effect of reflection loss

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Effects of a high‐temperature hydrogen anneal on the memory retention of metal‐nitride‐oxide‐silicon transistors at elevated temperatures

H. E. Maes; S. H. Usmani; G. L. Heyns

J. Appl. Phys. 52, 4348–4350 (1981) https://doi.org/10.1063/1.329266

Abstract

View articletitled, Effects of a high‐temperature hydrogen anneal on the memory retention of metal‐nitride‐oxide‐silicon transistors at elevated temperatures

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Erratum: Exact analysis of the conductivity of polycrystalline silicon films [J. Appl. Phys. 51, 4546 (1980)]

K. Board; M. Darwish

J. Appl. Phys. 52, 4351 (1981) https://doi.org/10.1063/1.329860

View articletitled, Erratum: Exact analysis of the conductivity of polycrystalline silicon films [J. Appl. Phys. 51, 4546 (1980)]

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