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Measurements and calculations of the anomalous energy broadening of a 300‐eV electron beam
J. Appl. Phys. 52, 7039–7043 (1981)
https://doi.org/10.1063/1.328698
The influence of a background plasma on the diocotron instability of a relativistic hollow electron beam
J. Appl. Phys. 52, 7080–7085 (1981)
https://doi.org/10.1063/1.328416
Lightning leader laboratory simulation by means of rectilinear surface discharges
J. Appl. Phys. 52, 7114–7120 (1981)
https://doi.org/10.1063/1.328420
Melting phenomena and pulsed‐laser annealing in semiconductors
J. Appl. Phys. 52, 7121–7128 (1981)
https://doi.org/10.1063/1.328685
Asymmetric crystal topography of diacetylene and polydiacetylene macroscopic single crystals
J. Appl. Phys. 52, 7129–7135 (1981)
https://doi.org/10.1063/1.328686
Displacement criterion for amorphization of silicon during ion implantation
J. Appl. Phys. 52, 7143–7146 (1981)
https://doi.org/10.1063/1.328688
Characteristics of submicron pores obtained by chemical etching of nuclear tracks in polycarbonate films
J. Appl. Phys. 52, 7155–7164 (1981)
https://doi.org/10.1063/1.328690
Reactivity of magnesium to hydrogen: A high‐pressure analysis of the dissolution enthalpy
J. Appl. Phys. 52, 7191–7195 (1981)
https://doi.org/10.1063/1.328694
Clustering in molecular‐beam epitaxial AlxGa1−xAs‐GaAs quantum‐well heterostructure lasers
J. Appl. Phys. 52, 7201–7207 (1981)
https://doi.org/10.1063/1.328696
Electrochemical sulfur doping of GaAs grown by molecular beam epitaxy
J. Appl. Phys. 52, 7214–7218 (1981)
https://doi.org/10.1063/1.328705
Determination of minority‐carrier lifetime in silicon solar cells from laser‐transient photovoltaic effect
J. Appl. Phys. 52, 7219–7223 (1981)
https://doi.org/10.1063/1.328706
Characterization of implanted and annealed vapor phase epitaxial GaAs
J. Appl. Phys. 52, 7224–7231 (1981)
https://doi.org/10.1063/1.328707
Electron transport of n‐type CdS single crystals annealed in Cd or In
J. Appl. Phys. 52, 7237–7244 (1981)
https://doi.org/10.1063/1.328709
A highly sensitive chalcogenide photoconductor in a near‐infrared wavelength region
J. Appl. Phys. 52, 7261–7269 (1981)
https://doi.org/10.1063/1.328712
The role of the blocking structure in hydrogenated amorphous silicon vidicon targets
J. Appl. Phys. 52, 7275–7280 (1981)
https://doi.org/10.1063/1.328714
Optical properties and transport in microcrystalline silicon prepared at temperatures below 400 °C
J. Appl. Phys. 52, 7281–7286 (1981)
https://doi.org/10.1063/1.328715
Dependence of electrical characteristics on laser power in cw laser processed Al‐nSi diodes
J. Appl. Phys. 52, 7287–7290 (1981)
https://doi.org/10.1063/1.328716
Field‐dependent transport through the depletion layer of a semiconducting electrode
J. Appl. Phys. 52, 7296–7303 (1981)
https://doi.org/10.1063/1.328718
Superconductor‐normal‐superconductor microbridges: Fabrication, electrical behavior, and modeling
J. Appl. Phys. 52, 7327–7343 (1981)
https://doi.org/10.1063/1.328724
Determination of the degree of easy axis alignment in uniaxial permanent magnets from remanence measurements
J. Appl. Phys. 52, 7344–7346 (1981)
https://doi.org/10.1063/1.328725
Propagation of surface magnetoelastic waves in TmFeO3 at the spin reorientation
J. Appl. Phys. 52, 7353–7359 (1981)
https://doi.org/10.1063/1.328683
Monte Carlo simulation of 1–10‐keV electron scattering in an aluminum target
J. Appl. Phys. 52, 7403–7408 (1981)
https://doi.org/10.1063/1.328730
Electric field enhanced emission from non‐Coulombic traps in semiconductors
J. Appl. Phys. 52, 7409–7415 (1981)
https://doi.org/10.1063/1.328731
An extended and unified solution for the semiconductor surface problem at equilibrium
J. Appl. Phys. 52, 7427–7432 (1981)
https://doi.org/10.1063/1.328734
Application of Penning discharge to the deposition of amorphous silicon
J. Appl. Phys. 52, 7453–7455 (1981)
https://doi.org/10.1063/1.328742
Field‐effect studies on Cu‐doped p‐type Te film metal‐insulator‐semiconductor structures
J. Appl. Phys. 52, 7456–7458 (1981)
https://doi.org/10.1063/1.328743
Erratum: Theoretical model of laser ionization of alkali vapors based on resonance saturation
J. Appl. Phys. 52, 7459 (1981)
https://doi.org/10.1063/1.329856
Re-examination of important defect complexes in silicon: From microelectronics to quantum computing
P. P. Filippatos, A. Chroneos, et al.
Tutorial: Simulating modern magnetic material systems in mumax3
Jonas J. Joos, Pedram Bassirian, et al.
Piezoelectric thin films and their applications in MEMS: A review
Jinpeng Liu, Hua Tan, et al.