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Generalized concepts in large‐scale laser isotope separation, with application to deuterium
J. Appl. Phys. 51, 1273–1285 (1980)
https://doi.org/10.1063/1.327820
Photorefractive effects and light‐induced charge migration in barium titanate
J. Appl. Phys. 51, 1297–1305 (1980)
https://doi.org/10.1063/1.327824
Simultaneous HF and DF laser excited by a ferroelectric ceramic capacitively coupled discharge
J. Appl. Phys. 51, 1321–1324 (1980)
https://doi.org/10.1063/1.327826
Phonon‐assisted recombination and stimulated emission in quantum‐well AlxGa1−xAs‐GaAs heterostructures
J. Appl. Phys. 51, 1328–1337 (1980)
https://doi.org/10.1063/1.327818
Pulsed laser heating profile width and changes in total coupling with pulse length and pressure
J. Appl. Phys. 51, 1338–1344 (1980)
https://doi.org/10.1063/1.327827
Characteristics of a TEA CO2 laser preionized by ultraviolet light
J. Appl. Phys. 51, 1345–1350 (1980)
https://doi.org/10.1063/1.327828
Development of highly repetitive phosphate glass lasers
J. Appl. Phys. 51, 1351–1356 (1980)
https://doi.org/10.1063/1.327829
Stimulated Raman and Brillouin backscattering along a magnetic field
J. Appl. Phys. 51, 1357–1359 (1980)
https://doi.org/10.1063/1.327830
Vibrational kinetics in CO electric discharge lasers: Modeling and experiments
J. Appl. Phys. 51, 1360–1369 (1980)
https://doi.org/10.1063/1.327831
Performance of a cw double electric discharge for supersonic CO lasers
J. Appl. Phys. 51, 1370–1378 (1980)
https://doi.org/10.1063/1.327832
Phase matching temperature variation of second‐harmonic generation in Li out‐diffused LiNbO3 layers
J. Appl. Phys. 51, 1379–1384 (1980)
https://doi.org/10.1063/1.327833
Technological aspects of cryogenic laser‐fusion targetsa)
J. Appl. Phys. 51, 1394–1402 (1980)
https://doi.org/10.1063/1.327836
On the use of the photoacoustic effect for investigating phase‐transitions in solids
J. Appl. Phys. 51, 1403–1406 (1980)
https://doi.org/10.1063/1.327837
MHD electrical potentials: Uniqueness of solutions to an extended class of elliptic boundary value problems
J. Appl. Phys. 51, 1407–1409 (1980)
https://doi.org/10.1063/1.327838
Mechanism of pulsed surface flashover involving electron‐stimulated desorption
J. Appl. Phys. 51, 1414–1421 (1980)
https://doi.org/10.1063/1.327839
A small electrostatic retarding field energy analyzer with compensating differentiation circuit
J. Appl. Phys. 51, 1431–1434 (1980)
https://doi.org/10.1063/1.327841
X‐ray diagnostics of a high‐Z plasma produced by a laser—Experimental
J. Appl. Phys. 51, 1443–1448 (1980)
https://doi.org/10.1063/1.327790
X‐ray yields of plasmas heated by 8‐nsec neodymium laser pulses
J. Appl. Phys. 51, 1449–1451 (1980)
https://doi.org/10.1063/1.327791
Atomic data and level populations of highly ionized Ti for tokamak plasmas
J. Appl. Phys. 51, 1464–1480 (1980)
https://doi.org/10.1063/1.327793
Evidence that helium irradiation blisters contain high‐pressure gas
J. Appl. Phys. 51, 1491–1493 (1980)
https://doi.org/10.1063/1.327797
A constitutive model for metals applicable at high‐strain rate
J. Appl. Phys. 51, 1498–1504 (1980)
https://doi.org/10.1063/1.327799
The effect of stress on the temperature dependence of ultrasonic velocity
J. Appl. Phys. 51, 1505–1509 (1980)
https://doi.org/10.1063/1.327800
Hashin‐Shtrikman bounds on the effective elastic moduli of polycrystals with monoclinic symmetry
J. Appl. Phys. 51, 1520–1524 (1980)
https://doi.org/10.1063/1.327803
Infrared absorption bands induced by Si‐related defects in GaAs: Absorption cross sections
J. Appl. Phys. 51, 1532–1538 (1980)
https://doi.org/10.1063/1.327805
Dielectric spectroscopy of a‐Se and some a‐Se : As alloys
J. Appl. Phys. 51, 1539–1548 (1980)
https://doi.org/10.1063/1.327806
Growth and phase stability of epitaxial metastable InSb1−xBix films on GaAs. I. Crystal growth
J. Appl. Phys. 51, 1549–1559 (1980)
https://doi.org/10.1063/1.327807
Growth and phase stability of epitaxial metastable InSb1−xBix films on GaAs. II. Phase stability
J. Appl. Phys. 51, 1560–1564 (1980)
https://doi.org/10.1063/1.327808
Anomalous high‐field electron injection and photoconduction in thin‐film alkali halides
J. Appl. Phys. 51, 1569–1575 (1980)
https://doi.org/10.1063/1.327810
Grain boundary diffusion of aluminum in polycrystalline silicon films
J. Appl. Phys. 51, 1576–1581 (1980)
https://doi.org/10.1063/1.327811
Steady‐state diffusion of zinc and manganese at high concentrations in fcc Cu‐Zn‐Mn ternary alloys
J. Appl. Phys. 51, 1582–1588 (1980)
https://doi.org/10.1063/1.327812
Silicide formation in thin cosputtered (tantalum + silicon) films on polycrystalline silicon and SiO2
J. Appl. Phys. 51, 1593–1598 (1980)
https://doi.org/10.1063/1.327814
In situ monitoring by ellipsometry of metalorganic epitaxy of GaAlAs‐GaAs superlattice
J. Appl. Phys. 51, 1599–1602 (1980)
https://doi.org/10.1063/1.327815
Study of surface recombination in GaAs and InP by picosecond optical techniques
J. Appl. Phys. 51, 1603–1604 (1980)
https://doi.org/10.1063/1.327816
Formation of silicon nitride compound layers by high‐dose nitrogen implantation
J. Appl. Phys. 51, 1605–1610 (1980)
https://doi.org/10.1063/1.327763
One‐carrier thermally stimulated currents and space‐charge‐limited currents in naphthalene crystals
J. Appl. Phys. 51, 1619–1623 (1980)
https://doi.org/10.1063/1.327766
Computer simulation of SEM electron beam induced current images of dislocations and stacking faults
J. Appl. Phys. 51, 1624–1633 (1980)
https://doi.org/10.1063/1.327767
Theory of the flicker noise in homogeneous nondegenerate semiconductors with single‐level SRH recombination centers
J. Appl. Phys. 51, 1637–1649 (1980)
https://doi.org/10.1063/1.327769
Electronic processes in SnO2‐ (n‐type) InP heterojunctions
J. Appl. Phys. 51, 1650–1654 (1980)
https://doi.org/10.1063/1.327770
Thermoelectric power of bcc transition‐metal alloys of the second period
J. Appl. Phys. 51, 1655–1659 (1980)
https://doi.org/10.1063/1.327771
Plasma poling of poly(vinylidene fluoride): Piezo‐ and pyroelectric response
J. Appl. Phys. 51, 1676–1681 (1980)
https://doi.org/10.1063/1.327775
Simple‐heating‐induced Josephson effects in quasiparticle‐injected superconducting weak links
J. Appl. Phys. 51, 1682–1685 (1980)
https://doi.org/10.1063/1.327776
Polarity‐dependent tunneling conductance of Ta/Ta2O5/Ag junctions
J. Appl. Phys. 51, 1686–1691 (1980)
https://doi.org/10.1063/1.327777
Hysteresis losses and magnetic phenomena in rotating disks of type‐II superconductors
J. Appl. Phys. 51, 1692–1701 (1980)
https://doi.org/10.1063/1.327778
Measurements of device parameters on large arrays of Josephson interferometers
J. Appl. Phys. 51, 1702–1710 (1980)
https://doi.org/10.1063/1.327779
Crystallographic texturing in Nb3Sn multifilamentary superconducting composites
J. Appl. Phys. 51, 1711–1713 (1980)
https://doi.org/10.1063/1.327780
Superconducting properties of in situ–processed Nb3/Sn‐Cu composites
J. Appl. Phys. 51, 1714–1718 (1980)
https://doi.org/10.1063/1.327781
Quantitative photoacoustic spectroscopy applied to thermally thick samples
J. Appl. Phys. 51, 1738–1742 (1980)
https://doi.org/10.1063/1.327785
Optical studies of anodic oxide films on GaAs using a rotating light‐pipe reflectometer
J. Appl. Phys. 51, 1743–1746 (1980)
https://doi.org/10.1063/1.327786
Optical properties of polycrystalline anthracene in the 3.2–9.3‐eV spectral region
J. Appl. Phys. 51, 1747–1750 (1980)
https://doi.org/10.1063/1.327787
Photoacoustic signal variations with chopping frequency for ZnSe laser windows
J. Appl. Phys. 51, 1756–1767 (1980)
https://doi.org/10.1063/1.327789
Photoinduced chemical changes in obliquely deposited amorphous Se‐Ge films
J. Appl. Phys. 51, 1768–1772 (1980)
https://doi.org/10.1063/1.327737
Photostructural change in the Urbach tail in chalcogenide glasses
J. Appl. Phys. 51, 1773–1779 (1980)
https://doi.org/10.1063/1.327738
Angular and energy distributions of H and He atoms backscattered from gold
J. Appl. Phys. 51, 1783–1789 (1980)
https://doi.org/10.1063/1.327740
Composition studies of MBE GaInP alloys by Rutherford scattering and x‐ray diffraction
J. Appl. Phys. 51, 1790–1797 (1980)
https://doi.org/10.1063/1.327741
New equivalent circuit model for electrographic discharge to dielectric paper
J. Appl. Phys. 51, 1809–1812 (1980)
https://doi.org/10.1063/1.327744
Shear strength of some semisintered oxides at high pressure
J. Appl. Phys. 51, 1825–1826 (1980)
https://doi.org/10.1063/1.327747
Single‐crystal elastic constants of the equiatomic NiTi alloy near the martensitic transformation
J. Appl. Phys. 51, 1833–1834 (1980)
https://doi.org/10.1063/1.327750
Comment on ’’High coercivity, isotropic plasma sprayed samarium‐cobalt magnets’’
J. Appl. Phys. 51, 1839–1840 (1980)
https://doi.org/10.1063/1.327752
Reply to ’’Comment on ’High coercivity, isotropic plasma sprayed samarium‐cobalt magnets ’ ’’
J. Appl. Phys. 51, 1841 (1980)
https://doi.org/10.1063/1.327753
Band‐edge photoluminescence of ZnSe using far‐below band‐gap excitations
J. Appl. Phys. 51, 1842–1843 (1980)
https://doi.org/10.1063/1.327754
Temperature dependence of Hall mobility in indium–tin oxide thin films
J. Appl. Phys. 51, 1847–1849 (1980)
https://doi.org/10.1063/1.327756
Temperature dependence of high‐frequency electron mobility in Ga0.47In0.53As
J. Appl. Phys. 51, 1850–1851 (1980)
https://doi.org/10.1063/1.327757
Low‐power nonlinear effects in the ferromagnetic resonance of spheres of Ba3Zn2Fe24O41
J. Appl. Phys. 51, 1857–1859 (1980)
https://doi.org/10.1063/1.327760
A step-by-step guide to perform x-ray photoelectron spectroscopy
Grzegorz Greczynski, Lars Hultman
Elastic moduli and thermal conductivity of quantum materials at finite temperature
Dylan A. Folkner, Zekun Chen, et al.
Distinct deformation mechanisms of silicate glasses under nanoindentation: The critical role of structure
Ziming Yan, Ranran Lu, et al.