Skip Nav Destination
Issues
Theoretical analysis of liquid immersion development in electrophotography
J. Appl. Phys. 50, 6583–6593 (1979)
https://doi.org/10.1063/1.325907
The effect of added hydrogen on the rf discharge chemistry of CF4, CF3H, and C2F6
J. Appl. Phys. 50, 6594–6599 (1979)
https://doi.org/10.1063/1.325908
Radiative‐transfer theory for the remote sensing of layered random media
J. Appl. Phys. 50, 6600–6604 (1979)
https://doi.org/10.1063/1.325909
Analysis of the thermal lensing effect for an optically thick sample—A revised model
J. Appl. Phys. 50, 6609–6615 (1979)
https://doi.org/10.1063/1.325911
Experimental properties of injection lasers. VII. Narrow stripe lasers with rigid waveguide
J. Appl. Phys. 50, 6621–6629 (1979)
https://doi.org/10.1063/1.325913
Experimental properties of injection lasers: VIII. Narrow stripe lasers with induced waveguide
J. Appl. Phys. 50, 6630–6642 (1979)
https://doi.org/10.1063/1.325914
TEM observation of catastrophically degraded Ga1−xAlxAs double‐heterostructure lasers
J. Appl. Phys. 50, 6643–6647 (1979)
https://doi.org/10.1063/1.325894
HCl pulsed chemical laser: An experimental study and modeling
J. Appl. Phys. 50, 6648–6655 (1979)
https://doi.org/10.1063/1.325895
Mode coupling between slab‐type optical waveguides via dichroic absorption of M centers
J. Appl. Phys. 50, 6688–6690 (1979)
https://doi.org/10.1063/1.325900
A large‐aperture electro‐optic diffraction modulator
J. Appl. Phys. 50, 6691–6693 (1979)
https://doi.org/10.1063/1.325901
Thin‐film optical waveguide polarizer using semiconducting cadmium sulphide
J. Appl. Phys. 50, 6694–6696 (1979)
https://doi.org/10.1063/1.325815
Power flow and energy distribution of magnetostatic bulk waves—In dielectric‐layered structure
J. Appl. Phys. 50, 6697–6699 (1979)
https://doi.org/10.1063/1.325902
Self‐sustained oscillations in (AlGa)As oxide‐defined stripe lasers
J. Appl. Phys. 50, 6700–6706 (1979)
https://doi.org/10.1063/1.325903
Laser performance of a glass‐clad LiNdP4O12 rectangular waveguide
J. Appl. Phys. 50, 6707–6712 (1979)
https://doi.org/10.1063/1.325904
Surface‐wave reflection phenomena at interfaces on y‐z LiNbO3
J. Appl. Phys. 50, 6719–6728 (1979)
https://doi.org/10.1063/1.325906
Acousto‐optic measurement of bulk wave generation by interdigital transducers excited at SAW resonance
J. Appl. Phys. 50, 6729–6732 (1979)
https://doi.org/10.1063/1.325915
Acoustic harmonic generation due to fatigue damage in high‐strength aluminum
J. Appl. Phys. 50, 6737–6741 (1979)
https://doi.org/10.1063/1.325917
Acoustic emission from gallium arsenide single crystals during deformation
J. Appl. Phys. 50, 6745–6750 (1979)
https://doi.org/10.1063/1.325919
The equivalent circuit of a step discontinuity in surface acoustic wave metallic gratings
J. Appl. Phys. 50, 6751–6753 (1979)
https://doi.org/10.1063/1.325868
Variational principles and bounds for the conductance of a heterogeneous locally anisotropic body
J. Appl. Phys. 50, 6754–6760 (1979)
https://doi.org/10.1063/1.325869
Shock profiles caused by different end conditions in one‐dimensional quiescent lattices
J. Appl. Phys. 50, 6767–6772 (1979)
https://doi.org/10.1063/1.325871
Planar and cylindrical jet streaming of water and of molten Fe40Ni40B20 alloy
J. Appl. Phys. 50, 6773–6778 (1979)
https://doi.org/10.1063/1.325872
Correlation of the glass transition and the pressure dependence of viscosity in liquids
J. Appl. Phys. 50, 6779–6783 (1979)
https://doi.org/10.1063/1.325873
Evidence of nonlinear processes from x‐ray spectra of CO2 laser‐irradiated targets
J. Appl. Phys. 50, 6784–6788 (1979)
https://doi.org/10.1063/1.325874
Dielectric properties for SF6 and SF6 mixtures predicted from basic data
J. Appl. Phys. 50, 6789–6796 (1979)
https://doi.org/10.1063/1.325814
Experimental study on the onset of positive corona in atmospheric air
J. Appl. Phys. 50, 6797–6805 (1979)
https://doi.org/10.1063/1.325875
Backscattering of a laser beam from electrostatic waves in a magnetized plasma
J. Appl. Phys. 50, 6811–6816 (1979)
https://doi.org/10.1063/1.325877
Burn‐through of thin aluminum foils by laser‐driven ablation
J. Appl. Phys. 50, 6817–6821 (1979)
https://doi.org/10.1063/1.325878
Experimental study of CO2‐laser‐induced air breakdown over long distances
J. Appl. Phys. 50, 6822–6825 (1979)
https://doi.org/10.1063/1.325879
Lattice defects in silicon doped by neutron transmutation
J. Appl. Phys. 50, 6838–6844 (1979)
https://doi.org/10.1063/1.325883
Deep‐level transient spectroscopy studies of Ni‐ and Zn‐diffused vapor‐phase‐epitaxy n‐GaAs
J. Appl. Phys. 50, 6845–6859 (1979)
https://doi.org/10.1063/1.325884
Observation of small defects in silicon crystal by diffuse x‐ray scattering
J. Appl. Phys. 50, 6860–6864 (1979)
https://doi.org/10.1063/1.325885
The identification of key variables in the solid phase epitaxial growth of silicon
J. Appl. Phys. 50, 6865–6869 (1979)
https://doi.org/10.1063/1.325886
Intrinsic limitations of doping diamonds by heavy‐ion implantation
J. Appl. Phys. 50, 6870–6872 (1979)
https://doi.org/10.1063/1.325887
Isothermal LPE growth of thin graded band‐gap AlxGa1−xAs layers
J. Appl. Phys. 50, 6902–6906 (1979)
https://doi.org/10.1063/1.325892
Freedericksz transition and anchoring effects of a nematic liquid crystal for general configurations
J. Appl. Phys. 50, 6907–6909 (1979)
https://doi.org/10.1063/1.325893
Aluminum‐silicide reactions. I. Diffusion, compound formation, and microstructure
J. Appl. Phys. 50, 6915–6922 (1979)
https://doi.org/10.1063/1.325843
X‐ray total‐external‐reflection–Bragg diffraction: A structural study of the GaAs‐Al interface
J. Appl. Phys. 50, 6927–6933 (1979)
https://doi.org/10.1063/1.325845
AES observation of electron‐beam‐induced layer formation on ZnS in the presence of water vapor
J. Appl. Phys. 50, 6934–6937 (1979)
https://doi.org/10.1063/1.325846
Morphology and crystallography of CdS‐CdTe double layers on various GaAs surfaces
J. Appl. Phys. 50, 6938–6941 (1979)
https://doi.org/10.1063/1.325847
Application of the current noise technique to the investigation on dislocations in metals during plastic deformation
J. Appl. Phys. 50, 6948–6955 (1979)
https://doi.org/10.1063/1.325849
Time dependence of depletion region formation in phosphorus‐doped silicon MOS devices at cryogenic temperatures
J. Appl. Phys. 50, 6962–6968 (1979)
https://doi.org/10.1063/1.325851
Ultrasonic parametric amplification effects: Contributions of the nonlinear material coefficients
J. Appl. Phys. 50, 6969–6973 (1979)
https://doi.org/10.1063/1.325852
Size effects on the normal‐state resistance of long microbridges
J. Appl. Phys. 50, 6974–6977 (1979)
https://doi.org/10.1063/1.325853
The AI1−yBIyCIIIDVI2xEV I2(1−x) pentenary alloy system and its application to photovoltaic solar energy conversion
J. Appl. Phys. 50, 6978–6985 (1979)
https://doi.org/10.1063/1.325854
Studies of the effect of oxidation time and temperature on the Si‐SiO2 interface using Auger sputter profiling
J. Appl. Phys. 50, 7007–7014 (1979)
https://doi.org/10.1063/1.325858
Inhomogeneities of surface potential in the thermally grown Si‐SiO2 interface
J. Appl. Phys. 50, 7015–7019 (1979)
https://doi.org/10.1063/1.325859
Microstructure and Schottky barrier height of iridium silicides formed on silicon
J. Appl. Phys. 50, 7020–7029 (1979)
https://doi.org/10.1063/1.325860
Transmission electron microscopy of Au‐based Ohmic contacts to n‐AlxGa1−xAs
J. Appl. Phys. 50, 7030–7033 (1979)
https://doi.org/10.1063/1.325861
Control of dihydride bond density in reactive sputtered amorphous silicon
J. Appl. Phys. 50, 7034–7038 (1979)
https://doi.org/10.1063/1.325862
A new model of isothermal charge transport for negatively corona‐charged Teflon
J. Appl. Phys. 50, 7039–7043 (1979)
https://doi.org/10.1063/1.325863
ac loss of a multifilamentary superconducting composite in a transverse ac magnetic field with large amplitude
J. Appl. Phys. 50, 7044–7050 (1979)
https://doi.org/10.1063/1.325864
Fabrication of Nb‐NbOx‐Pb Josephson tunnel junctions using rf glow‐discharge oxidation
J. Appl. Phys. 50, 7051–7059 (1979)
https://doi.org/10.1063/1.325865
Flux distribution and hysteresis loss in a round superconducting wire for the complete range of flux penetration
J. Appl. Phys. 50, 7060–7066 (1979)
https://doi.org/10.1063/1.325866
Breathers and other exact solutions from Josephson’s equation in 2+1 dimensions
J. Appl. Phys. 50, 7067–7069 (1979)
https://doi.org/10.1063/1.325867
Basic Josephson tunnel parameters at microwave frequency—Strong temperature variations
J. Appl. Phys. 50, 7070–7081 (1979)
https://doi.org/10.1063/1.325812
Anomalous subsidiary absorption in single‐crystal YIG and evaluation of spin‐wave linewidth
J. Appl. Phys. 50, 7082–7088 (1979)
https://doi.org/10.1063/1.325816
Magnetic, surface, and corrosion properties of Ni‐Fe‐Pd thin films
J. Appl. Phys. 50, 7089–7092 (1979)
https://doi.org/10.1063/1.325817
Radial motion of unichiral magnetic bubbles with in‐plane field
J. Appl. Phys. 50, 7093–7101 (1979)
https://doi.org/10.1063/1.325813
Generation of dc and ac voltages by moving domain walls in ferromagnetic metals
J. Appl. Phys. 50, 7102–7107 (1979)
https://doi.org/10.1063/1.325818
The structure, magnetic characterization, and oxidation of colloidal iron dispersions
J. Appl. Phys. 50, 7108–7115 (1979)
https://doi.org/10.1063/1.325819
Magnetization reversal in Fe80B15Si5 metallic glass with large uniaxial magnetostrictive anisotropy
J. Appl. Phys. 50, 7116–7121 (1979)
https://doi.org/10.1063/1.325820
Magnetic hysteresis behavior and microstructure of severely cold‐worked and aged Co‐Fe‐Nb alloy
J. Appl. Phys. 50, 7122–7127 (1979)
https://doi.org/10.1063/1.325821
Pyroelectric effects and discharge currents in polyethylene terephthalate (PET)
J. Appl. Phys. 50, 7128–7137 (1979)
https://doi.org/10.1063/1.325822
Phase measurements in the frequency domain photoacoustic spectroscopy of solids
J. Appl. Phys. 50, 7138–7146 (1979)
https://doi.org/10.1063/1.325823
Refractive index profiles and range distributions of silicon implanted with high‐energy nitrogen
J. Appl. Phys. 50, 7147–7155 (1979)
https://doi.org/10.1063/1.325824
Secondary emission and ion feedback in a straight semiconducting channel
J. Appl. Phys. 50, 7168–7176 (1979)
https://doi.org/10.1063/1.325827
Nitrogen isotope separation by multiphoton dissociation of methylamine
J. Appl. Phys. 50, 7177–7180 (1979)
https://doi.org/10.1063/1.325828
Time‐resolved spectrometry of in vivo firefly bioluminescence emissions
J. Appl. Phys. 50, 7181–7185 (1979)
https://doi.org/10.1063/1.325829
Hydriding and dehydriding kinetics of Mg in a Mg/Mg2Cu eutectic alloy: Pressure sweep method
J. Appl. Phys. 50, 7200–7209 (1979)
https://doi.org/10.1063/1.325832
A theoretical evaluation and optimization of the radiation resistance of gallium arsenide soar‐cell structures
J. Appl. Phys. 50, 7210–7219 (1979)
https://doi.org/10.1063/1.325833
Reflection and transmission in discontinuous cylindrical waveguides
J. Appl. Phys. 50, 7220–7227 (1979)
https://doi.org/10.1063/1.325834
New profiled silicon photodetector for improved short‐wavelength quantum efficiency
J. Appl. Phys. 50, 7228–7231 (1979)
https://doi.org/10.1063/1.325835
Extension of the theorem of orthogonality for piecewise continuous eigenfunctions
J. Appl. Phys. 50, 7235–7236 (1979)
https://doi.org/10.1063/1.325837
Elastoresistance‐coefficient measurements of p‐type silicon on sapphire
J. Appl. Phys. 50, 7240–7242 (1979)
https://doi.org/10.1063/1.325839
On the rate‐controlling step of copper diffusion/oxidation through gold
J. Appl. Phys. 50, 7243–7244 (1979)
https://doi.org/10.1063/1.325840
Recrystallization of vacuum‐deposited ultrathin CdS films by the H2S heat‐treatment process
J. Appl. Phys. 50, 7245–7246 (1979)
https://doi.org/10.1063/1.325841
Effect of hole injection on γ‐ray‐induced conduction in polystyrene and poly‐monochloro‐para‐xylylene
J. Appl. Phys. 50, 7247–7249 (1979)
https://doi.org/10.1063/1.325802
Supercurrent‐versus‐magnetic field characteristics of two‐dimensional Josephson tunnel junctions
J. Appl. Phys. 50, 7254–7255 (1979)
https://doi.org/10.1063/1.325804
Electrical activation process of phosphorus atoms with annealing for doped CVD poly‐Si
J. Appl. Phys. 50, 7256–7257 (1979)
https://doi.org/10.1063/1.325805
Infrared spectra of new acceptor levels in boron‐doped and gallium‐doped silicon
J. Appl. Phys. 50, 7258–7260 (1979)
https://doi.org/10.1063/1.325806
Recoil implantation and ion‐beam‐induced composition changes in alloys and compounds
J. Appl. Phys. 50, 7261–7263 (1979)
https://doi.org/10.1063/1.325807
A step-by-step guide to perform x-ray photoelectron spectroscopy
Grzegorz Greczynski, Lars Hultman
Elastic moduli and thermal conductivity of quantum materials at finite temperature
Dylan A. Folkner, Zekun Chen, et al.
Distinct deformation mechanisms of silicate glasses under nanoindentation: The critical role of structure
Ziming Yan, Ranran Lu, et al.