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Ab initio calculations of the deformation of polyethylene
J. Appl. Phys. 50, 6047–6051 (1979)
https://doi.org/10.1063/1.325723
Modeling of tensile properties of polymer blends: PPO/poly(styrene‐co‐p‐chlorostyrene)
J. Appl. Phys. 50, 6052–6060 (1979)
https://doi.org/10.1063/1.325793
Viscoelastic properties of entangled polymers: Ternary blends of monodisperse homopolymers
J. Appl. Phys. 50, 6077–6082 (1979)
https://doi.org/10.1063/1.325797
Electronic energy‐band structure of trans‐polyacetylene: EHCO and MNDO studies
J. Appl. Phys. 50, 6088–6090 (1979)
https://doi.org/10.1063/1.325776
Piezoelectricity in β‐phase poly(vinylidene fluoride) having a ’’single‐crystal’’ orientation
J. Appl. Phys. 50, 6091–6094 (1979)
https://doi.org/10.1063/1.325777
Piezoelectric activity and field‐induced crystal structure transitions in poled poly(vinylidene fluoride) films
J. Appl. Phys. 50, 6095–6100 (1979)
https://doi.org/10.1063/1.325778
The dependence of the piezoelectric response of poly(vinylidene fluoride) on phase‐I volume fraction
J. Appl. Phys. 50, 6101–6105 (1979)
https://doi.org/10.1063/1.325779
An infrared study of phase‐III poly(vinylidene fluoride)
J. Appl. Phys. 50, 6106–6112 (1979)
https://doi.org/10.1063/1.325780
Design of complex electron lenses consisting of two double cylinders
J. Appl. Phys. 50, 6123–6128 (1979)
https://doi.org/10.1063/1.325784
Attenuation characteristics of a high‐power CO2 laser by an air discharge plasma column
J. Appl. Phys. 50, 6159–6161 (1979)
https://doi.org/10.1063/1.325791
Laser system for boring and sampling in coated‐particle fuel
J. Appl. Phys. 50, 6162–6167 (1979)
https://doi.org/10.1063/1.325799
Ti diffusion in Ti : LiNbO3 planar and channel optical waveguides
J. Appl. Phys. 50, 6175–6182 (1979)
https://doi.org/10.1063/1.325801
A calculation of particle size distributions in the break‐up of shaped charge jets
J. Appl. Phys. 50, 6190–6195 (1979)
https://doi.org/10.1063/1.325751
Measurement of Townsend ionization coefficients and the breakdown potentials for the Penning mixtures of Ne and Kr
J. Appl. Phys. 50, 6207–6210 (1979)
https://doi.org/10.1063/1.325754
Growth of a Gaussian ripple on a uniform‐plane wave front in plasmas
J. Appl. Phys. 50, 6214–6221 (1979)
https://doi.org/10.1063/1.325756
Deposition of crystals from the plasmas of ZrO2, HfO2, ThO2, and CeO2
J. Appl. Phys. 50, 6222–6229 (1979)
https://doi.org/10.1063/1.325757
Coherent curvature radiation from an electron beam rotating in a plasma
J. Appl. Phys. 50, 6241–6246 (1979)
https://doi.org/10.1063/1.325759
EPR determination of the concentration of chromium charge states in semi‐insulating GaAs : Cr
J. Appl. Phys. 50, 6251–6252 (1979)
https://doi.org/10.1063/1.325761
Anomalous carrier tail generation mechanism in BF+2 ion‐implanted layers of silicon
J. Appl. Phys. 50, 6257–6261 (1979)
https://doi.org/10.1063/1.325763
An x‐ray diffraction study on the microstructure of vapor‐deposited fcc lead films: normal and oblique incidences
J. Appl. Phys. 50, 6262–6266 (1979)
https://doi.org/10.1063/1.325764
Effects of hydrostatic pressure up to 25 kbars on zinc oxide varistors—Static loading
J. Appl. Phys. 50, 6283–6289 (1979)
https://doi.org/10.1063/1.325767
Hashin‐Shtrikman bounds on the effective elastic moduli of polycrystals with orthorhombic symmetry
J. Appl. Phys. 50, 6290–6295 (1979)
https://doi.org/10.1063/1.325768
Oscillatory‐to‐nonoscillatory transition due to external noise in a parametric oscillator
J. Appl. Phys. 50, 6296–6302 (1979)
https://doi.org/10.1063/1.325769
XPS observation of Fe1−xO at temperatures between 25 and 800 °C
J. Appl. Phys. 50, 6303–6308 (1979)
https://doi.org/10.1063/1.325770
Frequency variations in quartz crystal resonators due to internal dissipation
J. Appl. Phys. 50, 6309–6315 (1979)
https://doi.org/10.1063/1.325771
Silicide formation by high‐dose Si+‐ion implantation of Pd
J. Appl. Phys. 50, 6321–6327 (1979)
https://doi.org/10.1063/1.325773
Photoluminescence excitation spectra of AlxGa1−xP alloys
J. Appl. Phys. 50, 6344–6347 (1979)
https://doi.org/10.1063/1.325721
Formation, decomposition, and electrical transport properties of amorphous Hf‐Ni and Hf‐Co alloys
J. Appl. Phys. 50, 6348–6352 (1979)
https://doi.org/10.1063/1.325724
Photon recycling in Ga1−xAlxAs : Si graded‐band‐gap LED’s
J. Appl. Phys. 50, 6353–6362 (1979)
https://doi.org/10.1063/1.325725
Thermoelectric power of Nd1−xLax and Ce1−xLax alloys
J. Appl. Phys. 50, 6363–6365 (1979)
https://doi.org/10.1063/1.325726
Electron trapping in SiO2 at 295 and 77 °K
J. Appl. Phys. 50, 6366–6372 (1979)
https://doi.org/10.1063/1.325727
Deep‐state‐controlled minority‐carrier lifetime in n‐type gallium phosphide
J. Appl. Phys. 50, 6373–6385 (1979)
https://doi.org/10.1063/1.325728
Electrical properties of ion‐implanted layers in Hg0.79Cd0.21Te
J. Appl. Phys. 50, 6386–6389 (1979)
https://doi.org/10.1063/1.325729
Growth and electrical properties of sputter‐deposited single‐crystal GaSb films on GaAs substrates
J. Appl. Phys. 50, 6396–6405 (1979)
https://doi.org/10.1063/1.325722
Analysis of capacitance‐voltage measurements on heat‐treated Cu2−xS/CdS heterojunctions
J. Appl. Phys. 50, 6406–6412 (1979)
https://doi.org/10.1063/1.325731
A breakdown‐initiated negative‐resistance device with MOST‐transistor structure
J. Appl. Phys. 50, 6421–6422 (1979)
https://doi.org/10.1063/1.325734
Effects of plastic deformation on the superconducting specific‐heat transition of niobium
J. Appl. Phys. 50, 6423–6436 (1979)
https://doi.org/10.1063/1.325735
Properties of niobium superconducting bridges prepared by electron‐beam lithography and ion implantation
J. Appl. Phys. 50, 6437–6442 (1979)
https://doi.org/10.1063/1.325736
Magnetic properties and hyperfine interactions in the β‴ phase of potassium ferrite
J. Appl. Phys. 50, 6455–6458 (1979)
https://doi.org/10.1063/1.325739
ESR study of NiFe2O4 precipitation process from silicate glasses
J. Appl. Phys. 50, 6469–6474 (1979)
https://doi.org/10.1063/1.325741
Analysis of thermally stimulated currents using activation energy spectra
J. Appl. Phys. 50, 6475–6479 (1979)
https://doi.org/10.1063/1.325742
Laser‐emission cross sections of MeNdP4O12 (Me=Li, Na, K) crystals
J. Appl. Phys. 50, 6492–6499 (1979)
https://doi.org/10.1063/1.325744
Absolute measurement of low‐energy H0 fluxes by a secondary emission detector
J. Appl. Phys. 50, 6516–6519 (1979)
https://doi.org/10.1063/1.325747
Deposited profiles and homogeneous alloys from a hexagonal array of point sources
J. Appl. Phys. 50, 6520–6523 (1979)
https://doi.org/10.1063/1.325748
The development of a self‐contained instant‐display erasable electrophoretic x‐ray imager
J. Appl. Phys. 50, 6534–6542 (1979)
https://doi.org/10.1063/1.325711
LiBixNd1−xP4O12 waveguide laser layer epitaxially grown on LiNdP4O12 substrate
J. Appl. Phys. 50, 6546–6548 (1979)
https://doi.org/10.1063/1.325713
Comments on ’’The Anderson-Grüneisen parameter for 16 crystals of cubic symmetry’’
J. Appl. Phys. 50, 6551 (1979)
https://doi.org/10.1063/1.325715
Extension of thin‐film calculations for films having unlike surface properties
J. Appl. Phys. 50, 6556–6561 (1979)
https://doi.org/10.1063/1.325717
Growth of polymer films on compound semiconductors and dry etching process
J. Appl. Phys. 50, 6567–6569 (1979)
https://doi.org/10.1063/1.325720
A step-by-step guide to perform x-ray photoelectron spectroscopy
Grzegorz Greczynski, Lars Hultman
Elastic moduli and thermal conductivity of quantum materials at finite temperature
Dylan A. Folkner, Zekun Chen, et al.
Distinct deformation mechanisms of silicate glasses under nanoindentation: The critical role of structure
Ziming Yan, Ranran Lu, et al.