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XeO* production through collisional electronic energy transfer from two‐photon excited Xe atoms
J. Appl. Phys. 49, 2219–2223 (1978)
https://doi.org/10.1063/1.325127
The fundamental solution in the theory of eddy currents and forces for conductors in steady motion
J. Appl. Phys. 49, 2241–2249 (1978)
https://doi.org/10.1063/1.325130
High‐power photopreionization‐stabilized carbon dioxide waveguide lasers operating at gas pressures of up to 13 atm
J. Appl. Phys. 49, 2250–2253 (1978)
https://doi.org/10.1063/1.325131
Optimal timing and power enhancement observed in a double‐pulse fast‐discharge‐driven XeF laser
J. Appl. Phys. 49, 2262–2264 (1978)
https://doi.org/10.1063/1.325133
The Faraday effect in Hg1−xCdxTe at CO2 laser wavelengths
J. Appl. Phys. 49, 2265–2267 (1978)
https://doi.org/10.1063/1.325109
A passive nonresonant technique for pulse contrast enhancement and gain isolation
J. Appl. Phys. 49, 2268–2276 (1978)
https://doi.org/10.1063/1.325110
Nd : Y2O3 single‐crystal fiber laser: Room‐temperature cw operation at 1.07‐ and 1.35‐μm wavelength
J. Appl. Phys. 49, 2281–2287 (1978)
https://doi.org/10.1063/1.325112
Study of the surface acoustic wave properties of lead molybdate
J. Appl. Phys. 49, 2306–2312 (1978)
https://doi.org/10.1063/1.325115
Acoustic‐wave absorption/amplification in nonparabolic degenerate semiconductors
J. Appl. Phys. 49, 2323–2327 (1978)
https://doi.org/10.1063/1.325117
Aerosol impactors: A study of a fluid jet impinging upon a void
J. Appl. Phys. 49, 2339–2345 (1978)
https://doi.org/10.1063/1.325120
Intense relativistic electron‐beam trajectories and their effect on beam heating of toroidally confined plasma
J. Appl. Phys. 49, 2357–2364 (1978)
https://doi.org/10.1063/1.325123
Electrode surface field and preionization effects on the spatial distribution of arcs in CO2 laser discharges
J. Appl. Phys. 49, 2376–2379 (1978)
https://doi.org/10.1063/1.325125
Transverse self‐focusing and filamentation of a laser beam in a magnetoplasma
J. Appl. Phys. 49, 2396–2400 (1978)
https://doi.org/10.1063/1.325134
Resistance changes induced by electron‐spin resonance in ion‐implanted Si : P system
J. Appl. Phys. 49, 2401–2406 (1978)
https://doi.org/10.1063/1.325081
The microstructural location of the intergranular metal‐oxide phase in a zinc oxide varistor
J. Appl. Phys. 49, 2407–2411 (1978)
https://doi.org/10.1063/1.325135
Thermal stresses and cracking resistance of dielectric films (SiN, Si3N4, and SiO2) on Si substrates
J. Appl. Phys. 49, 2423–2426 (1978)
https://doi.org/10.1063/1.325084
Approximating the transient response of double‐heterojunction devices
J. Appl. Phys. 49, 2435–2438 (1978)
https://doi.org/10.1063/1.325086
A ’’photocurrent‐inversion effect’’ of sintered AgBr microcrystals at room temperature
J. Appl. Phys. 49, 2439–2442 (1978)
https://doi.org/10.1063/1.325087
Doubled‐layered polycrystalline cadmium sulfide on lithium niobate
J. Appl. Phys. 49, 2443–2448 (1978)
https://doi.org/10.1063/1.325088
In‐plane susceptibility of amorphous ferrimagnetic films near the compensation point
J. Appl. Phys. 49, 2461–2465 (1978)
https://doi.org/10.1063/1.325092
Anisotropy field of small magnetic particles as measured by resonance
J. Appl. Phys. 49, 2466–2469 (1978)
https://doi.org/10.1063/1.325093
The nucleation of magnetic domains during the hcp to fcc phase transition in cobalt
J. Appl. Phys. 49, 2470–2472 (1978)
https://doi.org/10.1063/1.325094
Dielectric breakdown in electrically stressed thin films of thermal SiO2
J. Appl. Phys. 49, 2478–2489 (1978)
https://doi.org/10.1063/1.325096
Thermal depolarization current study of polystyrene composites containing mica flakes
J. Appl. Phys. 49, 2490–2493 (1978)
https://doi.org/10.1063/1.325097
Optical absorption and photoconductivity in thermally grown SiO2 films
J. Appl. Phys. 49, 2499–2502 (1978)
https://doi.org/10.1063/1.325099
Explanation of up‐conversion and optical storage in CdS: Spatially modulated band structure
J. Appl. Phys. 49, 2508–2512 (1978)
https://doi.org/10.1063/1.325101
Oxygen pressure dependence of the retrogrowth of oxidation‐induced stacking faults in (100) silicon
J. Appl. Phys. 49, 2513–2516 (1978)
https://doi.org/10.1063/1.325102
A simple method for growing V3Si single crystals
J. Appl. Phys. 49, 2523–2525 (1978)
https://doi.org/10.1063/1.325104
Closed‐form calculation of the transient behavior of (Al,Ga)As double‐heterojunction LED’s
J. Appl. Phys. 49, 2543–2545 (1978)
https://doi.org/10.1063/1.325108
Single thin‐active‐layer visible‐spectrum In1−xGaxP1−zAsz heterostructure lasers
J. Appl. Phys. 49, 2551–2556 (1978)
https://doi.org/10.1063/1.325062
Lattice location of Te in laser‐annealed Te‐implanted silicon
J. Appl. Phys. 49, 2569–2571 (1978)
https://doi.org/10.1063/1.325068
Correlation between lattice damage and electrical activation of phosphorus‐implanted silicon
J. Appl. Phys. 49, 2573–2575 (1978)
https://doi.org/10.1063/1.325070
Reflection of a Gaussian ultrasonic beam from Al2O3 layer–stainless steel in water at the Rayleigh angle
J. Appl. Phys. 49, 2576–2577 (1978)
https://doi.org/10.1063/1.325071
Profile of the carrier lifetimes in illuminated GaAs as a function of depth
J. Appl. Phys. 49, 2578–2580 (1978)
https://doi.org/10.1063/1.325072
Radiation dose at the silicon‐sapphire interface due to electron‐beam aluminization
J. Appl. Phys. 49, 2586–2588 (1978)
https://doi.org/10.1063/1.325075
Transferred‐electron photoemission to 1.65 μm from InGaAs
J. Appl. Phys. 49, 2591–2592 (1978)
https://doi.org/10.1063/1.325077
A step-by-step guide to perform x-ray photoelectron spectroscopy
Grzegorz Greczynski, Lars Hultman
Scaling effects on the microstructure and thermomechanical response of through silicon vias (TSVs)
Shuhang Lyu, Thomas Beechem, et al.