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Absolute linear thermal‐expansion measurements on copper and aluminum from 5 to 320 K
J. Appl. Phys. 48, 853–864 (1977)
https://doi.org/10.1063/1.323746
Linear thermal expansion measurements on silicon from 6 to 340 K
J. Appl. Phys. 48, 865–868 (1977)
https://doi.org/10.1063/1.323747
Observation of ultrasonic surface waves on plane and cylindrical solids by optical methods
J. Appl. Phys. 48, 869–875 (1977)
https://doi.org/10.1063/1.323748
Enhanced elastic modulus in composition‐modulated gold‐nickel and copper‐palladium foils
J. Appl. Phys. 48, 876–879 (1977)
https://doi.org/10.1063/1.323749
Effect of temperature on irradiation‐induced dislocation loops in copper
J. Appl. Phys. 48, 880–886 (1977)
https://doi.org/10.1063/1.323750
Berlinite, a temperature‐compensated material for surface acoustic wave applications
J. Appl. Phys. 48, 887–892 (1977)
https://doi.org/10.1063/1.323703
Range profiles of 100–400‐keV deuterons in nickel: Experiment and computer simulation
J. Appl. Phys. 48, 893–897 (1977)
https://doi.org/10.1063/1.323704
Location of positive charges in SiO2 films on Si generated by vuv photons, x rays, and high‐field stressing
J. Appl. Phys. 48, 898–906 (1977)
https://doi.org/10.1063/1.323705
Dependence of residual damage on temperature during Ar+ sputter cleaning of silicon
J. Appl. Phys. 48, 907–913 (1977)
https://doi.org/10.1063/1.323706
Heterostructure by solid‐phase epitaxy in the Si 〈111〉/Pd/Si (amorphous) system
J. Appl. Phys. 48, 917–919 (1977)
https://doi.org/10.1063/1.323708
Trapping of hydrogen isotopes in molybdenum and niobium predamaged by ion implantation
J. Appl. Phys. 48, 920–926 (1977)
https://doi.org/10.1063/1.323709
Size considerations in the design of cells for photoacoustic spectroscopy
J. Appl. Phys. 48, 927–933 (1977)
https://doi.org/10.1063/1.323710
Nonlinear elastic interactions between acoustic bulk and surface waves
J. Appl. Phys. 48, 934–939 (1977)
https://doi.org/10.1063/1.323711
The electric strength of hexane vapor and liquid in the critical region
J. Appl. Phys. 48, 943–950 (1977)
https://doi.org/10.1063/1.323713
Preparation and properties of ferroelectric PLZT thin films by rf sputtering
J. Appl. Phys. 48, 951–953 (1977)
https://doi.org/10.1063/1.323714
Rare‐earth dihydride compounds: Lattice thermal expansion and investigation of the thermal dissociation
J. Appl. Phys. 48, 964–968 (1977)
https://doi.org/10.1063/1.323717
Surface acoutic wave velocity dispersion induced by radiative absorption
J. Appl. Phys. 48, 969–977 (1977)
https://doi.org/10.1063/1.323718
Strength of MgO and NaCl polycrystals to confining pressures of 250 kbar at 25 °C
J. Appl. Phys. 48, 978–985 (1977)
https://doi.org/10.1063/1.323719
Reflection and bulk‐wave conversion of Rayleigh wave at a single shallow groove
J. Appl. Phys. 48, 994–1003 (1977)
https://doi.org/10.1063/1.323721
Analysis for the electromagnetic fields of a dipole located within a metal‐cased borehole
J. Appl. Phys. 48, 1009–1012 (1977)
https://doi.org/10.1063/1.323799
On the electrostatic problem consisting of a charged nonconducting disk and a metal sphere
J. Appl. Phys. 48, 1013–1019 (1977)
https://doi.org/10.1063/1.323800
Magnetic field perturbations due to a hole in a conducting wall near a time changing magnetic field
J. Appl. Phys. 48, 1032–1035 (1977)
https://doi.org/10.1063/1.323724
Fields and forces of a macroscopic sphere above a ground plane in a sinusoidally varying electric field
J. Appl. Phys. 48, 1036–1040 (1977)
https://doi.org/10.1063/1.323803
Angular scattering in charge‐exchanging beams: Implications for neutral beam formation via negative ions
J. Appl. Phys. 48, 1041–1046 (1977)
https://doi.org/10.1063/1.323804
Implosion dynamics of a hemispherical target irradiated by an intense relativistic electron beam
J. Appl. Phys. 48, 1047–1053 (1977)
https://doi.org/10.1063/1.323778
VUV emission from high‐intensity focused REB discharges into aluminum targets
J. Appl. Phys. 48, 1058–1060 (1977)
https://doi.org/10.1063/1.323780
Propagation of an unneutralized intense relativistic electron beam in a magnetic field
J. Appl. Phys. 48, 1061–1069 (1977)
https://doi.org/10.1063/1.323781
Steady‐state self‐focusing and filamentation of whistlers in a plasma
J. Appl. Phys. 48, 1078–1084 (1977)
https://doi.org/10.1063/1.323783
The characteristics of a medium current relativistic electron‐beam diode
J. Appl. Phys. 48, 1085–1093 (1977)
https://doi.org/10.1063/1.323784
Firing characteristics of a triggered vacuum gap employing a dielectric coated with a semiconducting layer
J. Appl. Phys. 48, 1101–1105 (1977)
https://doi.org/10.1063/1.323787
Kinetic theory of a spherical probe in a stationary collision‐dominated isothermal plasma
J. Appl. Phys. 48, 1106–1121 (1977)
https://doi.org/10.1063/1.323788
Volume, index‐of‐refraction, and stress changes in electron‐irradiated vitreous silica
J. Appl. Phys. 48, 1131–1138 (1977)
https://doi.org/10.1063/1.323791
On the crystallization of amorphous selenium films: Thermal effects and photoeffects
J. Appl. Phys. 48, 1139–1148 (1977)
https://doi.org/10.1063/1.323792
Long‐term degradation of GaAs‐Ga1−xAlxAs DH lasers due to facet erosion
J. Appl. Phys. 48, 1160–1162 (1977)
https://doi.org/10.1063/1.323796
Temporal stability of single‐line cw HF chemical laser with unstable resonator
J. Appl. Phys. 48, 1163–1165 (1977)
https://doi.org/10.1063/1.323751
Survival of cryogenic laser fusion fuel configurations in fluorescence energy
J. Appl. Phys. 48, 1176–1178 (1977)
https://doi.org/10.1063/1.323754
The excitation of anharmonic molecules for steady‐state and pulsed radiation
J. Appl. Phys. 48, 1195–1199 (1977)
https://doi.org/10.1063/1.323758
Luminescence and direct experimental observations of band‐structure effects in nitrogen‐doped GaxIn1−xP alloys
J. Appl. Phys. 48, 1200–1205 (1977)
https://doi.org/10.1063/1.323759
Relative dominance of bulk or surface absorption in highly transparent materials by transient methods
J. Appl. Phys. 48, 1217–1222 (1977)
https://doi.org/10.1063/1.323762
Laser fusion microballoon wall‐thickness measurements: A comparative study
J. Appl. Phys. 48, 1223–1228 (1977)
https://doi.org/10.1063/1.323763
Effects of low‐ionization gas additive along with uv photopreionization on CO2 TEA laser operation
J. Appl. Phys. 48, 1229–1239 (1977)
https://doi.org/10.1063/1.323764
A model relating electrical properties and impurity concentrations in semi‐insulating GaAs
J. Appl. Phys. 48, 1262–1267 (1977)
https://doi.org/10.1063/1.323769
Negative magnetoresistance in GaAs containing Mn or Ni acceptors
J. Appl. Phys. 48, 1268–1271 (1977)
https://doi.org/10.1063/1.323770
Beryllium doping and diffusion in molecular‐beam epitaxy of GaAs and AlxGa1−xAs
J. Appl. Phys. 48, 1278–1287 (1977)
https://doi.org/10.1063/1.323772
Interfacial recombination velocity determination in In 0.5Ga0.05P/GaAs
J. Appl. Phys. 48, 1288–1292 (1977)
https://doi.org/10.1063/1.323773
Temperature dependence of Jc in superconducting Nb3Ge
J. Appl. Phys. 48, 1293–1295 (1977)
https://doi.org/10.1063/1.323774
Position‐dependent flux pinning by proton‐irradiation damage in thick niobium samples
J. Appl. Phys. 48, 1296–1300 (1977)
https://doi.org/10.1063/1.323723
Heating effects in high‐frequency metallic Josephson devices: Voltage limit, bolometric mixing, and noise
J. Appl. Phys. 48, 1311–1320 (1977)
https://doi.org/10.1063/1.323776
Parametric amplification and oscillation at 36 GHz using a point‐contact Josephson junction
J. Appl. Phys. 48, 1321–1326 (1977)
https://doi.org/10.1063/1.323777
Production of uniform field gradients for magnetometers by means of current‐carrying strips
J. Appl. Phys. 48, 1338–1341 (1977)
https://doi.org/10.1063/1.323727
Origin of magnetization‐induced uniaxial anisotropy in evaporated Fe‐Co and Ni‐Co films
J. Appl. Phys. 48, 1355–1358 (1977)
https://doi.org/10.1063/1.323730
The statistical distribution of carrier number in electron avalanches in gases
J. Appl. Phys. 48, 1376–1377 (1977)
https://doi.org/10.1063/1.323739
Surface flicker noise in p‐n junction diodes at a high injection level
J. Appl. Phys. 48, 1380 (1977)
https://doi.org/10.1063/1.323741
A step-by-step guide to perform x-ray photoelectron spectroscopy
Grzegorz Greczynski, Lars Hultman
Celebrating notable advances in compound semiconductors: A tribute to Dr. Wladyslaw Walukiewicz
Kirstin Alberi, Junqiao Wu, et al.
GaN-based power devices: Physics, reliability, and perspectives
Matteo Meneghini, Carlo De Santi, et al.