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Interfacial edge dislocations and dislocation walls in anisotropic two−phase media
J. Appl. Phys. 46, 5–10 (1975)
https://doi.org/10.1063/1.321369
Noncoaxial passing dislocation loops in ordered and disordered alloys
J. Appl. Phys. 46, 27–35 (1975)
https://doi.org/10.1063/1.321379
Composition dependence of stacking−fault parameter of binary and ternary copper systems
J. Appl. Phys. 46, 49–51 (1975)
https://doi.org/10.1063/1.321367
An improved method for measuring the order parameter in nematic liquid crystals
J. Appl. Phys. 46, 78–80 (1975)
https://doi.org/10.1063/1.321371
Further consideration of the track−interaction model for thermoluminescence in LiF(TLD−100)
J. Appl. Phys. 46, 81–88 (1975)
https://doi.org/10.1063/1.321372
Short−range order in Au−Fe radiation−enhanced diffusion and the effectiveness of 14−MeV neutrons
J. Appl. Phys. 46, 99–104 (1975)
https://doi.org/10.1063/1.321374
The origin of internal stress in low−voltage sputtered tungsten films
J. Appl. Phys. 46, 112–117 (1975)
https://doi.org/10.1063/1.322250
X−ray topography of defects produced after heat treatment of dislocation−free silicon containing oxygen
J. Appl. Phys. 46, 118–125 (1975)
https://doi.org/10.1063/1.321331
Study of electrode products emitted by vacuum arcs in form of molten metal particles
J. Appl. Phys. 46, 126–131 (1975)
https://doi.org/10.1063/1.321333
Momentum modulation of a free electron beam with a laser
J. Appl. Phys. 46, 132–137 (1975)
https://doi.org/10.1063/1.321334
Thermionic emission from negative electron affinity silicon
J. Appl. Phys. 46, 151–157 (1975)
https://doi.org/10.1063/1.321356
Electrical conductance and radiation of argon plasma containing condensing natural coal ash
J. Appl. Phys. 46, 178–182 (1975)
https://doi.org/10.1063/1.321314
Advances in the efficient generation of intense pulsed proton beams
J. Appl. Phys. 46, 187–192 (1975)
https://doi.org/10.1063/1.321316
External field effects on diffusion and solidification derived from the free−volume model
J. Appl. Phys. 46, 208–212 (1975)
https://doi.org/10.1063/1.321322
Electromechanical response of PZT 65/35 subjected to axial shock loading
J. Appl. Phys. 46, 222–229 (1975)
https://doi.org/10.1063/1.321325
Field effect conductance modulation in vacuum−evaporated amorphous silicon films
J. Appl. Phys. 46, 239–246 (1975)
https://doi.org/10.1063/1.321328
Longitudinal modes in distributed feedback lasers with external reflectors
J. Appl. Phys. 46, 247–249 (1975)
https://doi.org/10.1063/1.321329
Concentration dependence of the absorption coefficient for n− and p−type GaAs between 1.3 and 1.6 eV
J. Appl. Phys. 46, 250–257 (1975)
https://doi.org/10.1063/1.321330
Electro−optic light modulation in a planar zinc−blende−type crystal waveguide
J. Appl. Phys. 46, 260–265 (1975)
https://doi.org/10.1063/1.321376
Transient photostimulated charge transfer from a photoconductor to an insulating fluid
J. Appl. Phys. 46, 266–278 (1975)
https://doi.org/10.1063/1.321377
Electron avalanche breakdown by laser radiation in insulating crystals
J. Appl. Phys. 46, 279–291 (1975)
https://doi.org/10.1063/1.321378
Electrical conduction and dielectric breakdown in crystalline NiO and NiO(Li) films
J. Appl. Phys. 46, 310–316 (1975)
https://doi.org/10.1063/1.321336
Determination of transition probabilities through stimulated emission in rare gas ions
J. Appl. Phys. 46, 317–322 (1975)
https://doi.org/10.1063/1.321337
Behavior of carrier lifetime spectra (77 °K) in GaAs1−xPx
J. Appl. Phys. 46, 323–331 (1975)
https://doi.org/10.1063/1.321338
Nitrogen−implanted silicon. I. Damage annealing and lattice location
J. Appl. Phys. 46, 332–334 (1975)
https://doi.org/10.1063/1.321339
Modification of the particle−model theory of diffuse reflectance properties of powdered samples
J. Appl. Phys. 46, 344–349 (1975)
https://doi.org/10.1063/1.321341
Effect of intervalley transfer on microwave Faraday effect in n−GaSb
J. Appl. Phys. 46, 389–393 (1975)
https://doi.org/10.1063/1.321348
Cathodoluminescence of compositionally graded layers of GaAs1−xPx
J. Appl. Phys. 46, 394–401 (1975)
https://doi.org/10.1063/1.321349
Lorentz electron microscopy of domain walls in single−crystal evaporated iron films
J. Appl. Phys. 46, 416–421 (1975)
https://doi.org/10.1063/1.321352
Room−temperature cw Nd3+ : CeCl3 laser
J. Appl. Phys. 46, 436–438 (1975)
https://doi.org/10.1063/1.322252
Role of Ca++ impurities in the evaporation kinetics of NaCl and KCl crystals
J. Appl. Phys. 46, 441–442 (1975)
https://doi.org/10.1063/1.322254
Localized vibrational mode absorption of ion−implanted Be in ZnTe
J. Appl. Phys. 46, 446–448 (1975)
https://doi.org/10.1063/1.322257
High current efficiency accelerating lens system of field emission scanning electron microscope
J. Appl. Phys. 46, 454–456 (1975)
https://doi.org/10.1063/1.321358
Effect of target temperature on surface composition changes of Cu−Ni alloys during Ar ion bombardment
J. Appl. Phys. 46, 460–462 (1975)
https://doi.org/10.1063/1.321360
Addendum: Cross−sectional specimens for transmission electron microscopy
J. Appl. Phys. 46, 471 (1975)
https://doi.org/10.1063/1.321365
Erratum: Acousto−optic figure of merit of TeO2 for circularly polarized light
J. Appl. Phys. 46, 472 (1975)
https://doi.org/10.1063/1.322273
A step-by-step guide to perform x-ray photoelectron spectroscopy
Grzegorz Greczynski, Lars Hultman
Piezoelectric thin films and their applications in MEMS: A review
Jinpeng Liu, Hua Tan, et al.
Tutorial: Simulating modern magnetic material systems in mumax3
Jonas J. Joos, Pedram Bassirian, et al.