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Issues
December 1972
ISSN 0021-8979
EISSN 1089-7550
In this Issue
Scattering of a transverse elastic wave by an elastic sphere in a solid medium
J. Appl. Phys. 43, 4853–4861 (1972)
https://doi.org/10.1063/1.1661037
Effect of nitrogen on the electrical and structural properties of triode‐sputtered tantalum films
J. Appl. Phys. 43, 4865–4871 (1972)
https://doi.org/10.1063/1.1661039
Diffusion measurements in thin films utilizing work function changes: Cr into Au
J. Appl. Phys. 43, 4900–4907 (1972)
https://doi.org/10.1063/1.1661043
Ferroelectric and optical properties of Pb5Ge3O11 and its isomorphous compound Pb5Ge2SiO11
J. Appl. Phys. 43, 4907–4915 (1972)
https://doi.org/10.1063/1.1661044
Proton irradiation at 30°K and isochronal annealing of reactively sputtered Ta thin‐film resistors
J. Appl. Phys. 43, 4915–4921 (1972)
https://doi.org/10.1063/1.1661045
Spall fracture in aluminum monocrystals: a dislocation‐dynamics approach
J. Appl. Phys. 43, 4922–4927 (1972)
https://doi.org/10.1063/1.1661046
Expansion, crazing and exfoliation of lithium niobate on ion bombardment and comparison results for sapphire
J. Appl. Phys. 43, 4927–4933 (1972)
https://doi.org/10.1063/1.1661047
Electro‐optic properties of ferroelectric 5PbO · 3GeO2 single crystal
J. Appl. Phys. 43, 4933–4936 (1972)
https://doi.org/10.1063/1.1661048
Martensitic pretransformation phenomena in the Au‐47.5 at.% Cd and the Fe‐29.7 at.% Ni alloys
J. Appl. Phys. 43, 4944–4950 (1972)
https://doi.org/10.1063/1.1661051
Phenomenological theory of antiferroelectricity and ferroelectricity applied to NaNbO3 and the system KNbO3–NaNbO3
J. Appl. Phys. 43, 4951–4956 (1972)
https://doi.org/10.1063/1.1661052
Acoustoelectric interaction in degenerately doped piezoelectric semiconductors
J. Appl. Phys. 43, 4957–4963 (1972)
https://doi.org/10.1063/1.1661053
Positive‐ion bombardment of substrates in rf diode glow discharge sputtering
J. Appl. Phys. 43, 4965–4971 (1972)
https://doi.org/10.1063/1.1661054
Growth of electromagnetic waves on the surface of a negative differential conductance material
J. Appl. Phys. 43, 4981–4988 (1972)
https://doi.org/10.1063/1.1661057
A field‐emission illumination system using a new optical configuration
J. Appl. Phys. 43, 4989–4996 (1972)
https://doi.org/10.1063/1.1661058
Diffraction of electromagnetic plane wave by an infinite slit embedded in an anisotropic plasma
J. Appl. Phys. 43, 4996–5001 (1972)
https://doi.org/10.1063/1.1661059
Electrical measurements in silicon under shock‐wave compression
J. Appl. Phys. 43, 5007–5012 (1972)
https://doi.org/10.1063/1.1661061
Densities of complexed and uncomplexed molecules in amorphous films of trinitrofluorenone and poly‐n‐vinylcarbazole
J. Appl. Phys. 43, 5028–5033 (1972)
https://doi.org/10.1063/1.1661064
Drift mobilities in amorphous charge‐transfer complexes of trinitrofluorenone and poly‐n‐vinylcarbazole
J. Appl. Phys. 43, 5033–5040 (1972)
https://doi.org/10.1063/1.1661065
I‐V characteristics of MOS capacitors with polycrystalline silicon field plates
J. Appl. Phys. 43, 5041–5044 (1972)
https://doi.org/10.1063/1.1661066
Theoretical tunneling current characteristics of the SIS (semiconductor‐insulator‐semiconductor) diode
J. Appl. Phys. 43, 5051–5061 (1972)
https://doi.org/10.1063/1.1661069
Plasma parameters in gas discharges for positive‐column He–Se+ lasers
J. Appl. Phys. 43, 5064–5068 (1972)
https://doi.org/10.1063/1.1661071
High‐frequency electro‐optic prism deflector with application to optical demultiplexing and multiplexing
J. Appl. Phys. 43, 5078–5081 (1972)
https://doi.org/10.1063/1.1661074
Bragg diffraction by standing ultrasonic waves with application to optical demultiplexing
J. Appl. Phys. 43, 5081–5084 (1972)
https://doi.org/10.1063/1.1661075
Indirect, Γ8v‐X1c, band gap in GaAs1−xPx
J. Appl. Phys. 43, 5084–5090 (1972)
https://doi.org/10.1063/1.1661076
Normal‐mode analysis of anisotropic and gyrotropic thin‐film waveguides for integrated optics
J. Appl. Phys. 43, 5090–5097 (1972)
https://doi.org/10.1063/1.1661077
Evidence for a primarily nonradiative Si,O defect in GaP
J. Appl. Phys. 43, 5098–5101 (1972)
https://doi.org/10.1063/1.1661078
Millimeter‐wave investigation of electronic conduction in semiconducting III‐V compounds
J. Appl. Phys. 43, 5101–5109 (1972)
https://doi.org/10.1063/1.1661079
Refractive indices and electro‐optic coefficients of the eulitities Bi4Ge3O12 and Bi4Si3O12
J. Appl. Phys. 43, 5110–5111 (1972)
https://doi.org/10.1063/1.1661080
Magnesium‐doped GaAs and Alx Ga1−x As by molecular beam epitaxy
J. Appl. Phys. 43, 5118–5123 (1972)
https://doi.org/10.1063/1.1661082
Magnetophotoconductivity of semi‐insulating GaAs and its behavior upon electron bombardment
J. Appl. Phys. 43, 5131–5134 (1972)
https://doi.org/10.1063/1.1661084
Resonant enhancement of the recombination probability associated with isoelectronic trap states in semiconductor alloys: In1−xGaxP:N laser operation (77 °K) in the yellow‐green
C. B. Duke; D. L. Smith; G. G. Kleiman; H. M. Macksey; N. Holonyak, Jr.; R. D. Dupuis; J. C. Campbell
J. Appl. Phys. 43, 5134–5140 (1972)
https://doi.org/10.1063/1.1661085
Temperature and intensity dependence of photoconductivity in amorphous (GePbSn)0.5Te0.5 films
J. Appl. Phys. 43, 5142–5151 (1972)
https://doi.org/10.1063/1.1661087
Magnetic transitions in the insulator nickel squarate dihydrate, NiC4O4·2H2O
J. Appl. Phys. 43, 5155–5161 (1972)
https://doi.org/10.1063/1.1661089
Sensitivity of Josephson junctions in video detection of microwave and millimeter‐wave radiation
J. Appl. Phys. 43, 5161–5163 (1972)
https://doi.org/10.1063/1.1661090
Faraday induction and flux flow voltages in type‐II superconductors
J. Appl. Phys. 43, 5165–5174 (1972)
https://doi.org/10.1063/1.1661092
Structural and magnetic studies on DyFe2–DyAl2 and DyCo2–DyAl2
J. Appl. Phys. 43, 5174–5179 (1972)
https://doi.org/10.1063/1.1661093
Molecular image resolution in electron microscopy
J. Appl. Phys. 43, 5181–5189 (1972)
https://doi.org/10.1063/1.1661094
COMMUNICATIONS
Reflections from a plasma sphere and relationship between plasma frequency and the classical electron radius
J. Appl. Phys. 43, 5204–5205 (1972)
https://doi.org/10.1063/1.1661099
ERRATA
A step-by-step guide to perform x-ray photoelectron spectroscopy
Grzegorz Greczynski, Lars Hultman
GaN-based power devices: Physics, reliability, and perspectives
Matteo Meneghini, Carlo De Santi, et al.
Celebrating notable advances in compound semiconductors: A tribute to Dr. Wladyslaw Walukiewicz
Kirstin Alberi, Junqiao Wu, et al.