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Issues
August 1969
ISSN 0021-8979
EISSN 1089-7550
In this Issue
Growth and Characterization of Spinel Single Crystals for Substrate Use in Integrated Electronics
J. Appl. Phys. 40, 3433–3444 (1969)
https://doi.org/10.1063/1.1658216
Dielectric Breakdown in Thin Evaporated Films of CaF2, MgF2, NaF, and LiF
J. Appl. Phys. 40, 3491–3498 (1969)
https://doi.org/10.1063/1.1658225
Effects of Explosive Loading on the Structure of a Magnesium Single Crystal
J. Appl. Phys. 40, 3499–3504 (1969)
https://doi.org/10.1063/1.1658226
Effect of Alpha Irradiation on the X‐Ray Diffraction Profiles of Silicon Single Crystals
J. Appl. Phys. 40, 3505–3509 (1969)
https://doi.org/10.1063/1.1658227
Plasma‐Filled Waveguide with Axial Magnetization. I. Variational Determination of Normal Modes
J. Appl. Phys. 40, 3532–3538 (1969)
https://doi.org/10.1063/1.1658232
Plasma‐Filled Waveguide with Axial Magnetization. II. Scattering by a Section of Finite Length
J. Appl. Phys. 40, 3538–3544 (1969)
https://doi.org/10.1063/1.1658233
Elevated Pressure Study of the Effect of Different Donors on Electron Transfer in n‐GaAs
J. Appl. Phys. 40, 3554–3555 (1969)
https://doi.org/10.1063/1.1658237
Superconductivity in Niobium Containing Ferromagnetic Gadolinium or Paramagnetic Yttrium Dispersions
J. Appl. Phys. 40, 3582–3587 (1969)
https://doi.org/10.1063/1.1658241
Effect of Substrate Imperfections on GaAs Injection Lasers Prepared by Liquid‐Phase Epitaxy
J. Appl. Phys. 40, 3587–3597 (1969)
https://doi.org/10.1063/1.1658242
Effect of Inhomogeneity on Magnetic Properties, X‐Ray Diffraction and 31P NMR Linewidths in UP1−xSx Powders
J. Appl. Phys. 40, 3621–3625 (1969)
https://doi.org/10.1063/1.1658247
Orientation Dependence of Dislocation Damping in Hexagonal Metals
J. Appl. Phys. 40, 3632–3641 (1969)
https://doi.org/10.1063/1.1658249
Experimental Investigation on the Blurring of Spatial Moiré Fringes
J. Appl. Phys. 40, 3642–3649 (1969)
https://doi.org/10.1063/1.1658250
Determination of the Low‐Frequency Electro‐optic Coefficients of NaNO2
J. Appl. Phys. 40, 3656–3658 (1969)
https://doi.org/10.1063/1.1658252
Optical Activity and Birefringence Associated with Elastic and Plastic Deformation of the Alkali Halides
J. Appl. Phys. 40, 3659–3661 (1969)
https://doi.org/10.1063/1.1658253
Continuum Electrostatic Probe Theory for Large Sheaths on Spheres and Cylinders
J. Appl. Phys. 40, 3668–3673 (1969)
https://doi.org/10.1063/1.1658255
Characteristics of Rotationally Stabilized Long Plasma Arcs in a Chamber
J. Appl. Phys. 40, 3687–3693 (1969)
https://doi.org/10.1063/1.1658258
Length Change of Copper and Aluminum after Electron Irradiation
J. Appl. Phys. 40, 3694–3702 (1969)
https://doi.org/10.1063/1.1658259
Electrical Behavior of Group III and V Implanted Dopants in Silicon
J. Appl. Phys. 40, 3702–3719 (1969)
https://doi.org/10.1063/1.1658260
Electrical and Optical Properties of n‐Type Si‐Compensated GaAs Prepared by Liquid‐Phase Epitaxy
J. Appl. Phys. 40, 3720–3725 (1969)
https://doi.org/10.1063/1.1658261
Surface State and Interface Effects on the Capacitance‐Voltage Relationship in Schottky Barriers
J. Appl. Phys. 40, 3726–3730 (1969)
https://doi.org/10.1063/1.1658262
Measurement of Diffusion Lengths in p‐Type Gallium Arsenide by Electron Beam Excitation
J. Appl. Phys. 40, 3745–3750 (1969)
https://doi.org/10.1063/1.1658265
Stresses in Heteroepitaxial Layers: GaAs1−xPx on GaAs
J. Appl. Phys. 40, 3754–3758 (1969)
https://doi.org/10.1063/1.1658267
Correlation between Surface Structure and Surface States at the Clean Germanium (111) Surface
J. Appl. Phys. 40, 3758–3765 (1969)
https://doi.org/10.1063/1.1658268
Measurement of Elastic and Plastic Unloading Wave Profiles in 2024‐T4 Aluminum Alloy
J. Appl. Phys. 40, 3776–3780 (1969)
https://doi.org/10.1063/1.1658271
Determination of Release Adiabats and Recentered Hugoniot Curves by Shock Reverberation Techniques
J. Appl. Phys. 40, 3786–3795 (1969)
https://doi.org/10.1063/1.1658273
Shock Deformation of Inconel 600 Alloy: Effect of Fine Coherent Precipitates on Explosive‐Shock Hardening
J. Appl. Phys. 40, 3796–3802 (1969)
https://doi.org/10.1063/1.1658274
Effect of Humidity on the Surface Oxidation of UC Single Crystals at Room Temperature
J. Appl. Phys. 40, 3819–3824 (1969)
https://doi.org/10.1063/1.1658277
Effect of Temperature on the Work‐Function Minimum of Cesiated Tungsten Surfaces
J. Appl. Phys. 40, 3825–3827 (1969)
https://doi.org/10.1063/1.1658278
Thermal Oxidation of Sputtered Tantalum Thin Films between 100° and 525°C
J. Appl. Phys. 40, 3828–3835 (1969)
https://doi.org/10.1063/1.1658279
Gamma Response of Semi‐insulating Material in the Presence of Trapping and Detrapping
J. Appl. Phys. 40, 3838–3854 (1969)
https://doi.org/10.1063/1.1658281
COMMUNICATIONS
In Situ Electron‐Microscopic Observation of Epitaxial Growth of PbS and PbSe on MgO
J. Appl. Phys. 40, 3857–3859 (1969)
https://doi.org/10.1063/1.1658284
Reply to ``Comment on `Competition Between Random and Preferred Ejection in High‐Yield Mercury‐Ion Sputtering' ''
J. Appl. Phys. 40, 3859–3860 (1969)
https://doi.org/10.1063/1.1658286
Frequency Shift at 3.39 μ Due to Competition by 6328‐Å Laser Radiation
J. Appl. Phys. 40, 3860–3862 (1969)
https://doi.org/10.1063/1.1658287
Hysteretic Shifting of the Maximum Critical Transport Current in Superconducting Lead
J. Appl. Phys. 40, 3862–3863 (1969)
https://doi.org/10.1063/1.1658288
A step-by-step guide to perform x-ray photoelectron spectroscopy
Grzegorz Greczynski, Lars Hultman
Piezoelectric thin films and their applications in MEMS: A review
Jinpeng Liu, Hua Tan, et al.
Tutorial: Simulating modern magnetic material systems in mumax3
Jonas J. Joos, Pedram Bassirian, et al.