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Issues
May 1968
ISSN 0021-8979
EISSN 1089-7550
SPECIAL SECTION ON APPLIED SUPERCONDUCTIVITY
PHYSICS REVIEWS
Tunneling and Weak‐Link Superconductor Phenomena Having Potential Device Applications
J. Appl. Phys. 39, 2503–2508 (1968)
https://doi.org/10.1063/1.1656597
MAGNET MATERIALS
Fully Stabilized Superconducting Strip for the Argonne and Brookhaven Bubble Chambers
J. Appl. Phys. 39, 2518–2523 (1968)
https://doi.org/10.1063/1.1656605
Superconductivity Critical Current Densities in Ti–V Alloys
J. Appl. Phys. 39, 2524–2528 (1968)
https://doi.org/10.1063/1.1656606
Mechanical and Electrical Properties of Diffusion‐Processed Nb3Sn‐Copper‐Stainless Steel Composite Conductors
J. Appl. Phys. 39, 2533–2537 (1968)
https://doi.org/10.1063/1.1656610
Angular Dependence of Critical Currents in Plasma‐Plated Nb3Sn Strip Superconductors
J. Appl. Phys. 39, 2537 (1968)
https://doi.org/10.1063/1.1656611
PHENOMENA
Parallel and Perpendicular Magnetic Transitions of Films and Foils of Pb and Sn
J. Appl. Phys. 39, 2560 (1968)
https://doi.org/10.1063/1.1656615
COMPUTER DEVICES
Cryoelectric Content‐Addressable Memories using Flux‐Shuttling Nondestructive Readout
J. Appl. Phys. 39, 2579–2585 (1968)
https://doi.org/10.1063/1.1656620
PHENOMENA AND DEVICES
Frequency and Time‐Domain Analysis of a Superconductive Coaxial Line Using the Two‐Fluid Model
J. Appl. Phys. 39, 2592–2596 (1968)
https://doi.org/10.1063/1.1656626
Some Rate‐Dependent Aspects of Flux Jumping in Nb‐25% Zr Tubes
J. Appl. Phys. 39, 2597 (1968)
https://doi.org/10.1063/1.1656627
Measurement of the Surface Resistance of Superconducting Lead at 2.868 GHz
J. Appl. Phys. 39, 2606–2609 (1968)
https://doi.org/10.1063/1.1656630
The Pinning Potential and High‐Frequency Studies of Type‐II Superconductors
J. Appl. Phys. 39, 2617–2621 (1968)
https://doi.org/10.1063/1.1656632
HIGH‐FIELD MAGNETS. 1
Progress in Superconducting Beam Handling and Accelerator Structures Since November 1966
J. Appl. Phys. 39, 2633 (1968)
https://doi.org/10.1063/1.1656639
HIGH‐FIELD MAGNETS. 2
The Design of an 88‐kG, 20‐in.‐Bore Superconducting Magnet System
J. Appl. Phys. 39, 2641 (1968)
https://doi.org/10.1063/1.1656643
Results of Tests on Models for an 88‐kG, 51‐cm‐Bore‐Diameter Solenoid
J. Appl. Phys. 39, 2641–2646 (1968)
https://doi.org/10.1063/1.1656644
Problems in Designing Nonaxisymmetrical Superconducting Magnet Systems
J. Appl. Phys. 39, 2647–2651 (1968)
https://doi.org/10.1063/1.1656645
The Stabilization of High‐Current‐Density High‐Field Superconductive Magnets
J. Appl. Phys. 39, 2652 (1968)
https://doi.org/10.1063/1.1656646
JOSEPHSON AND RF DEVICES
Frequency Conversion Using Weak Multiply Connected Josephson Junctions
J. Appl. Phys. 39, 2683–2685 (1968)
https://doi.org/10.1063/1.1656653
REGULAR ARTICLES
Internal Field Distribution in Keepered and Nonkeepered Permalloy Film Memories
J. Appl. Phys. 39, 2704–2710 (1968)
https://doi.org/10.1063/1.1656657
Standing‐Spin‐Wave Modulation of the Reflected Microwave Power in YIG
J. Appl. Phys. 39, 2719–2722 (1968)
https://doi.org/10.1063/1.1656659
Transient Interference Studies of Passively Q‐Switched Ruby‐Laser Emission
J. Appl. Phys. 39, 2723–2730 (1968)
https://doi.org/10.1063/1.1656660
Magnetostatic Mode Propagation in Axially Magnetized YIG Rods Containing a Turning Point
J. Appl. Phys. 39, 2731–2734 (1968)
https://doi.org/10.1063/1.1656661
Effects of Dislocation Motion on the Ultrasonic Attenuation in Potassium and Gold at Low Temperatures
J. Appl. Phys. 39, 2744–2746 (1968)
https://doi.org/10.1063/1.1656664
Preparation of Efficient Electroluminescent Diodes from p‐on‐n Liquid‐Phase Epitaxial Layers of GaP
J. Appl. Phys. 39, 2747–2749 (1968)
https://doi.org/10.1063/1.1656665
The Application of Electron‐Mirror Microscopy to the Examination of Biological Material
J. Appl. Phys. 39, 2756–2758 (1968)
https://doi.org/10.1063/1.1656667
The Voigt‐Reuss‐Hill (VRH) Approximation and the Elastic Moduli of Polycrystalline ZnO, TiO2 (Rutile), and α‐Al2O3
J. Appl. Phys. 39, 2777–2782 (1968)
https://doi.org/10.1063/1.1656672
Dislocations and their Relation to Irregularities in Zinc‐Diffused GaAsP p‐n Junctions
J. Appl. Phys. 39, 2783–2790 (1968)
https://doi.org/10.1063/1.1656673
The Stress to Move a Dislocation through a Solid Containing a Pileup of Dislocations
J. Appl. Phys. 39, 2790–2792 (1968)
https://doi.org/10.1063/1.1656674
Affected Volume and Temperature Rise During Discontinuous Slip at Low Temperatures
J. Appl. Phys. 39, 2793–2797 (1968)
https://doi.org/10.1063/1.1656675
Superconducting Properties of Reactively Sputtered Thin‐Film Ternary Nitrides, Nb–Ti–N and Nb–Zr–N
J. Appl. Phys. 39, 2797–2803 (1968)
https://doi.org/10.1063/1.1656676
Transient Currents in Semi‐Insulating CdTe Characteristic of Deep Traps
J. Appl. Phys. 39, 2818–2828 (1968)
https://doi.org/10.1063/1.1656679
Amplitude Dependence of Internal Friction and Shear Modulus of Boron Fibers
J. Appl. Phys. 39, 2839–2845 (1968)
https://doi.org/10.1063/1.1656681
Dependence of Yield Stress on Diameter and Density of Prismatic Dislocation Loops
J. Appl. Phys. 39, 2845–2850 (1968)
https://doi.org/10.1063/1.1656682
Determination of the Electromechanical Coupling Coefficient of Thin‐Film Cadmium Sulphide
J. Appl. Phys. 39, 2863–2868 (1968)
https://doi.org/10.1063/1.1656685
Anisotropy in the Electrical Resistivity of Vanadium Dioxide Single Crystals
J. Appl. Phys. 39, 2872–2874 (1968)
https://doi.org/10.1063/1.1656687
Bremsstrahlung Produced in Thick Aluminum and Iron Targets by 0.5 to 2.8 MeV Electrons
J. Appl. Phys. 39, 2881–2889 (1968)
https://doi.org/10.1063/1.1656689
Introduction Rates of Electrically Active Defects in n‐ and p‐Type Silicon by Electron and Neutron Irradiation
J. Appl. Phys. 39, 2890–2904 (1968)
https://doi.org/10.1063/1.1656690
Photoelectronic Evaluation of Electron Radiation Damage in CdS Crystals
J. Appl. Phys. 39, 2908–2914 (1968)
https://doi.org/10.1063/1.1656692
Injection‐Laser Far‐Field Patterns with Gaussian Profiles in the Junction Plane
J. Appl. Phys. 39, 2923–2926 (1968)
https://doi.org/10.1063/1.1656694
High‐Temperature Internal Friction and Transport Mechanisms in Sodium Silicate Glasses
J. Appl. Phys. 39, 2927–2931 (1968)
https://doi.org/10.1063/1.1656695
Use of the Faraday Effect to Determine Electron Concentrations and Concentration Profiles in n‐GaAs
J. Appl. Phys. 39, 2931–2936 (1968)
https://doi.org/10.1063/1.1656696
Observation of Parallel Arrays of Pure Edge Dislocations in Silicon
J. Appl. Phys. 39, 2937–2939 (1968)
https://doi.org/10.1063/1.1656697
A Novel Vapor‐Deposition Effect in Amorphous Substances, as an Artifact Source in Electron Microscopy
J. Appl. Phys. 39, 2943–2947 (1968)
https://doi.org/10.1063/1.1656699
COMMUNICATIONS
Efficient Green Electroluminescence from GaP p‐n Junctions Grown by Liquid‐Phase Epitaxy
J. Appl. Phys. 39, 2962–2963 (1968)
https://doi.org/10.1063/1.1656703
Epitaxial Films of Silicon on Sapphire Formed by Vacuum Evaporation and Their Electrical Properties
J. Appl. Phys. 39, 2969–2971 (1968)
https://doi.org/10.1063/1.1656708
Semiempirical Formulas for Thermal Expansion and Grüneisen Constants of Ionic Crystals
J. Appl. Phys. 39, 2973–2975 (1968)
https://doi.org/10.1063/1.1656711
ERRATUM
A step-by-step guide to perform x-ray photoelectron spectroscopy
Grzegorz Greczynski, Lars Hultman
Scaling effects on the microstructure and thermomechanical response of through silicon vias (TSVs)
Shuhang Lyu, Thomas Beechem, et al.