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Mechanically tunable metasurface with large gamut of color: Lateral hybrid system
Thickness-scaling phonon resonance: A systematic study of hexagonal boron nitride from monolayers to bulk crystals
Quasi-periodic Andreev reflection in topological nodal-line semimetal–superconductor junctions
Photoexcited carrier dynamics in semi-insulating 4H-SiC by Raman spectroscopy
Issues
PERSPECTIVES
Process engineering of GaN power devices via selective-area p-type doping with ion implantation and ultra-high-pressure annealing
Tetsu Kachi; Tetsuo Narita; Hideki Sakurai; Maciej Matys; Keita Kataoka; Kazufumi Hirukawa; Kensuke Sumida; Masahiro Horita; Nobuyuki Ikarashi; Kacper Sierakowski; Michal Bockowski; Jun Suda
J. Appl. Phys. 132, 130901 (2022)
https://doi.org/10.1063/5.0107921
ARTICLES
Photonics, Plasmonics, Lasers, Optical Materials and Phenomena
Mechanically tunable metasurface with large gamut of color: Lateral hybrid system
J. Appl. Phys. 132, 133102 (2022)
https://doi.org/10.1063/5.0115964
A dual-broadband dual-function polarization converter based on reflective metasurface
J. Appl. Phys. 132, 133103 (2022)
https://doi.org/10.1063/5.0106861
Weak and strong coupling regimes in a topological photonic crystal bowtie cavity
J. Appl. Phys. 132, 133104 (2022)
https://doi.org/10.1063/5.0105397
Magnetism, Spintronics, and Superconductivity
Spin pumping in nanolayers of WS2/Co2FeAl heterostructures: Large spin mixing conductance and spin transparency
Soumyarup Hait; Nanhe Kumar Gupta; Nikita Sharma; Lalit Pandey; Nakul Kumar; Vineet Barwal; Prabhat Kumar; Sujeet Chaudhary
J. Appl. Phys. 132, 133901 (2022)
https://doi.org/10.1063/5.0107655
Magnetic field driven dynamics in twisted bilayer artificial spin ice at superlattice angles
J. Appl. Phys. 132, 133902 (2022)
https://doi.org/10.1063/5.0118078
Magnetization dynamics and spin pumping in Heusler compound Co2FeSi interfaced with MoS2
J. Appl. Phys. 132, 133905 (2022)
https://doi.org/10.1063/5.0098751
Dielectrics, Ferroelectrics, and Multiferroics
Toward accurate ferroelectric polarization estimation in nanoscopic systems
J. Appl. Phys. 132, 134101 (2022)
https://doi.org/10.1063/5.0102920
Physics of Nanoscale and Low-Dimensional Systems
Fermi energy dependence of ultrafast photoluminescence from graphene
J. Appl. Phys. 132, 134301 (2022)
https://doi.org/10.1063/5.0092558
Thickness-scaling phonon resonance: A systematic study of hexagonal boron nitride from monolayers to bulk crystals
In Special Collection:
2022 Early Career Investigator Selection
Xiaojie Jiang; Mingyuan Chen; Jiahan Li; Parvin Fathi-Hafshejani; Jialiang Shen; Yiming Jin; Wei Cai; Masoud Mahjouri-Samani; James H. Edgar; Siyuan Dai
J. Appl. Phys. 132, 134302 (2022)
https://doi.org/10.1063/5.0094039
Quasi-periodic Andreev reflection in topological nodal-line semimetal–superconductor junctions
J. Appl. Phys. 132, 134303 (2022)
https://doi.org/10.1063/5.0102989
Quantum Physics and Technology
Micro-machined deep silicon atomic vapor cells
J. Appl. Phys. 132, 134401 (2022)
https://doi.org/10.1063/5.0114762
Physics of Devices and Sensors
Soft Matter, Fluids, and Biophysics
Rotational acoustofluidic fields induced by cross structures with asymmetric radiation surface arrangements
In Special Collection:
Multiphysics of Microfluidics and Nanofluidics
J. Appl. Phys. 132, 134701 (2022)
https://doi.org/10.1063/5.0104386
Physics of Materials, Including Electrical, Thermal, Mechanical and Other Properties
A network mechanics method to study the mechanism of the large-deformation fracture of elastomers
J. Appl. Phys. 132, 135101 (2022)
https://doi.org/10.1063/5.0106445
Tailoring small-scale plasticity of nanotwined-copper micropillars via microstructures
J. Appl. Phys. 132, 135102 (2022)
https://doi.org/10.1063/5.0107552
Linear magnetoresistance in textured Bi1−xSbx ribbons prepared by melt spinning method
J. Appl. Phys. 132, 135103 (2022)
https://doi.org/10.1063/5.0112457
Radiation-induced conductivity in polystyrene at extremely low (79 K) temperature
J. Appl. Phys. 132, 135105 (2022)
https://doi.org/10.1063/5.0106159
Switchable multifunctional knob elastic metasurface for arbitrary modulation of flexural waves
J. Appl. Phys. 132, 135107 (2022)
https://doi.org/10.1063/5.0102207
Molecular dynamics simulations to understand the mechanical behavior of functional gradient nano-gyroid structures
In Special Collection:
2022 Early Career Investigator Selection
J. Appl. Phys. 132, 135109 (2022)
https://doi.org/10.1063/5.0102297
Composition-dependent phase transformation path involving 4O martensite in Ni–Mn–Sn magnetic shape memory alloys
Yansong Li; Jing Bai; Shaodong Sun; Miao Jin; Yu Zhang; Xinzeng Liang; Jianglong Gu; Yudong Zhang; Claude Esling; Xiang Zhao; Liang Zuo
J. Appl. Phys. 132, 135110 (2022)
https://doi.org/10.1063/5.0107783
A first-principles investigation of point defect structure and energetics in ThO2
J. Appl. Phys. 132, 135111 (2022)
https://doi.org/10.1063/5.0087369
Thermoelectric properties of Rashba compounds KSnX (X = Sb, Bi)
J. Appl. Phys. 132, 135112 (2022)
https://doi.org/10.1063/5.0101083
Thin Films, Interfaces, and Surfaces
High-performance multiple-doped In2O3 transparent conductive oxide films in near-infrared light region
J. Appl. Phys. 132, 135301 (2022)
https://doi.org/10.1063/5.0103270
Interfacial band parameters of ultrathin ALD–Al2O3, ALD–HfO2, and PEALD–AlN/ALD–Al2O3 on c-plane, Ga-face GaN through XPS measurements
Jiarui Gong; Zheyang Zheng; Daniel Vincent; Jie Zhou; Jisoo Kim; Donghyeok Kim; Tien Khee Ng; Boon S. Ooi; Kevin J. Chen; Zhenqiang Ma
J. Appl. Phys. 132, 135302 (2022)
https://doi.org/10.1063/5.0106485
Physics of Semiconductors
Effects of Er atoms on graphitization process and structural defects for epitaxial graphene
J. Appl. Phys. 132, 135701 (2022)
https://doi.org/10.1063/5.0096174
Photoexcited carrier dynamics in semi-insulating 4H-SiC by Raman spectroscopy
J. Appl. Phys. 132, 135702 (2022)
https://doi.org/10.1063/5.0108903
New properties of boron-oxygen dimer defect in boron-doped Czochralski silicon
In Special Collection:
Special Collection Recognizing Women in Applied Physics
J. Appl. Phys. 132, 135703 (2022)
https://doi.org/10.1063/5.0114809
ERRATA
Erratum: “A model of TaOx threshold switching memristor for neuromorphic computing” [J. Appl. Phys. 132, 064904 (2022)]
Xing Li; Zhe Feng; Jianxun Zou; Xu Wang; Guyue Hu; Feifei Wang; Cheng Ding; Yunlai Zhu; Fei Yang; Zuheng Wu; Yuehua Dai
J. Appl. Phys. 132, 139902 (2022)
https://doi.org/10.1063/5.0123486
A step-by-step guide to perform x-ray photoelectron spectroscopy
Grzegorz Greczynski, Lars Hultman
Piezoelectric thin films and their applications in MEMS: A review
Jinpeng Liu, Hua Tan, et al.
Tutorial: Simulating modern magnetic material systems in mumax3
Jonas J. Joos, Pedram Bassirian, et al.