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2D group 6 transition metal dichalcogenides toward wearable electronics and optoelectronics
Quantitative thermal measurement by the use of scanning thermal microscope and resistive thermal probes
Kinetic sheath in presence of multiple positive ions, negative ions, and particle wall emission
Giant reversible magnetocaloric effect in antiferromagnetic rare-earth cobaltite GdCoO3
Thermal transport properties of GaN with biaxial strain and electron-phonon coupling
Measurement of the refractive index of an Er3+:YAG crystal melt
Thermal transport across nanoscale damage profile in sapphire irradiated by swift heavy ions
PERSPECTIVES
Thin film metallic glasses: Properties, applications and future
J. Appl. Phys. 127, 030901 (2020)
https://doi.org/10.1063/1.5122884
2D group 6 transition metal dichalcogenides toward wearable electronics and optoelectronics
J. Appl. Phys. 127, 030902 (2020)
https://doi.org/10.1063/1.5140795
TUTORIALS
Uni-traveling-carrier photodiodes
J. Appl. Phys. 127, 031101 (2020)
https://doi.org/10.1063/1.5128444
Quantitative thermal measurement by the use of scanning thermal microscope and resistive thermal probes
J. Appl. Phys. 127, 031103 (2020)
https://doi.org/10.1063/1.5125062
ARTICLES
Photonics, Plasmonics, Photovoltaics, Lasers, Optical Materials and Phenomena
Defect engineering for high quality InP epitaxially grown on on-axis (001) Si
In Special Collection:
Defects in Semiconductors 2020
J. Appl. Phys. 127, 033102 (2020)
https://doi.org/10.1063/1.5127030
Effects of copper doping of vanadium dioxide films on DC and terahertz conductivity
In Special Collection:
Advances in Terahertz Solid-State Physics and Devices
J. Appl. Phys. 127, 033103 (2020)
https://doi.org/10.1063/1.5048472
Conductor-backed dielectric metasurface thermal emitters for mid-infrared spectroscopy
J. Appl. Phys. 127, 033105 (2020)
https://doi.org/10.1063/1.5125652
Electrical Discharges, Plasmas, and Plasma-Surface Interactions
Active control of thermoacoustic instability using microsecond plasma discharge
J. Appl. Phys. 127, 033301 (2020)
https://doi.org/10.1063/1.5129722
Kinetic sheath in presence of multiple positive ions, negative ions, and particle wall emission
J. Appl. Phys. 127, 033302 (2020)
https://doi.org/10.1063/1.5132596
Magnetism, Spintronics, and Superconductivity
Disorder and critical current variability in Josephson junctions
J. Appl. Phys. 127, 033901 (2020)
https://doi.org/10.1063/1.5125765
Backward volume vs Damon–Eshbach: A traveling spin wave spectroscopy comparison
J. Appl. Phys. 127, 033902 (2020)
https://doi.org/10.1063/1.5125751
Theoretical study of strain induced magnetic transition of single-layer CrTe3
J. Appl. Phys. 127, 033903 (2020)
https://doi.org/10.1063/1.5126246
Giant reversible magnetocaloric effect in antiferromagnetic rare-earth cobaltite GdCoO3
J. Appl. Phys. 127, 033904 (2020)
https://doi.org/10.1063/1.5132864
Magnetic properties, magnetocaloric effect and refrigeration performance in RE60Al20Ni20 (RE = Tm, Er and Ho) amorphous ribbons
In Special Collection:
Multicalorics
J. Appl. Phys. 127, 033905 (2020)
https://doi.org/10.1063/1.5140765
Dielectrics, Ferroelectrics, and Multiferroics
Mechanically tuned conductivity at individual grain boundaries in polycrystalline ZnO varistor ceramics
J. Appl. Phys. 127, 034101 (2020)
https://doi.org/10.1063/1.5131003
Investigation of AFM-based machining of ferroelectric thin films at the nanoscale
J. Appl. Phys. 127, 034103 (2020)
https://doi.org/10.1063/1.5133018
Physics of Nanoscale and Low-Dimensional Systems, Including Atomic and Quantum Phenomena
Size control of GaN nanocrystals formed by ion implantation in thermally grown silicon dioxide
J. Appl. Phys. 127, 034302 (2020)
https://doi.org/10.1063/1.5132604
Photoinduced Hall effect and transport properties of irradiated 8-Pmmn borophene monolayer
J. Appl. Phys. 127, 034303 (2020)
https://doi.org/10.1063/1.5130025
Physics of Devices and Sensors
Air plasma sensor for the measurement of sound pressure using millimetric and micrometric discharges
J. Appl. Phys. 127, 034502 (2020)
https://doi.org/10.1063/1.5096222
Physics of Materials, Including Electrical, Thermal, Mechanical and Other Properties
Thermal transport properties of GaN with biaxial strain and electron-phonon coupling
J. Appl. Phys. 127, 035102 (2020)
https://doi.org/10.1063/1.5133105
Hard x-ray photoemission spectroscopy of rhenium substituted higher manganese silicides
J. Appl. Phys. 127, 035103 (2020)
https://doi.org/10.1063/1.5128185
Measurement of the refractive index of an Er3+:YAG crystal melt
J. Appl. Phys. 127, 035104 (2020)
https://doi.org/10.1063/1.5128088
Thermoelectric properties of Al substituted tetrahedrite
J. Appl. Phys. 127, 035105 (2020)
https://doi.org/10.1063/1.5128409
Computer modeling investigation of MgV2O4 for Mg-ion batteries
J. Appl. Phys. 127, 035106 (2020)
https://doi.org/10.1063/1.5139114
The calculation of magnetic domain and magnetostriction in stressed grain-oriented silicon steel
J. Appl. Phys. 127, 035107 (2020)
https://doi.org/10.1063/1.5134854
Thermal transport across nanoscale damage profile in sapphire irradiated by swift heavy ions
J. Appl. Phys. 127, 035108 (2020)
https://doi.org/10.1063/1.5126413
Thin Films, Interfaces, and Surfaces
A density functional theory study on the passivation mechanisms of hydrogenated Si/Al2O3 interfaces
J. Appl. Phys. 127, 035301 (2020)
https://doi.org/10.1063/1.5123492
Growth of Pr2Ir2O7 thin films using solid phase epitaxy
J. Appl. Phys. 127, 035303 (2020)
https://doi.org/10.1063/1.5128537
Organic-Inorganic Systems, including Organic Electronics
Physics of Semiconductors
Electronic transport characterization of B+ ion-implanted silicon wafers with nonlinear photocarrier radiometry
In Special Collection:
Defects in Semiconductors 2020
J. Appl. Phys. 127, 035701 (2020)
https://doi.org/10.1063/1.5133668
On the effect of structural disorders on the Urbach’s tails of ternary chalcopyrite semiconductors and related ordered defect compounds
In Special Collection:
Defects in Semiconductors 2020
J. Appl. Phys. 127, 035703 (2020)
https://doi.org/10.1063/1.5131636
Defect characterization of unannealed neutron transmutation doped silicon by means of deep temperature microwave detected photo induced current transient spectroscopy
In Special Collection:
Defects in Semiconductors 2020
J. Appl. Phys. 127, 035704 (2020)
https://doi.org/10.1063/1.5134663
Luminescence behavior of semipolar InGaN/GaN “bow-tie” structures on patterned Si substrates
In Special Collection:
Defects in Semiconductors 2020
J. Appl. Phys. 127, 035705 (2020)
https://doi.org/10.1063/1.5129049
Influence of uniaxial stress on phonon-assisted relaxation in bismuth-doped silicon
In Special Collection:
Defects in Semiconductors 2020
J. Appl. Phys. 127, 035706 (2020)
https://doi.org/10.1063/1.5134691
Physics of Matter under Extreme Conditions
Effects of temperature on the flow stress of aluminum in shock waves and rarefaction waves
J. Appl. Phys. 127, 035901 (2020)
https://doi.org/10.1063/1.5130703
