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Volume 126, Issue 3

21 July 2019

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ISSN 0021-8979

EISSN 1089-7550

In this Issue

ARTICLES
ERRATA

ARTICLES

Photonics, Plasmonics, Photovoltaics, Lasers, Optical Materials and Phenomena

High performance In_0.83Ga_0.17As SWIR photodiode passivated by Al₂O₃/SiN_x stacks with low-stress SiN_x films

Luhong Wan; Gaoqi Cao; Xiumei Shao; Shuangyan Deng; Jifeng Cheng; Yi Gu; Xue Li

J. Appl. Phys. 126, 033101 (2019) https://doi.org/10.1063/1.5090393

Abstract

View articletitled, High performance In0.83Ga0.17As SWIR photodiode passivated by Al2O3/SiNx stacks with low-stress SiNx films

Supplementary Material

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Integrated photonics for low transverse emittance, ultrafast negative electron affinity GaAs photoemitters

L. Blankemeier; F. Rezaeifar; A. Garg; R. Kapadia

J. Appl. Phys. 126, 033102 (2019) https://doi.org/10.1063/1.5093938

Abstract

View articletitled, Integrated photonics for low transverse emittance, ultrafast negative electron affinity GaAs photoemitters

Supplementary Material

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Exciton dynamics as a function of excitation intensity and double-pulse excitation in cyanine molecule thin films: Toward low-power optical switches

Osamu Kojima; Junpei Nagauchi; Takashi Kita

J. Appl. Phys. 126, 033103 (2019) https://doi.org/10.1063/1.5090831

Abstract

View articletitled, Exciton dynamics as a function of excitation intensity and double-pulse excitation in cyanine molecule thin films: Toward low-power optical switches

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Role of the absorption on the spin-orbit interactions of light with Si nano-particles

In Special Collection: Dielectric Nanoresonators and Metamaterials

Jorge Olmos-Trigo; Cristina Sanz-Fernández; Diego R. Abujetas; Aitzol García-Etxarri; Gabriel Molina-Terriza; José A. Sánchez-Gil; F. Sebastián Bergeret; Juan José Sáenz

J. Appl. Phys. 126, 033104 (2019) https://doi.org/10.1063/1.5095467

Abstract

View articletitled, Role of the absorption on the spin-orbit interactions of light with Si nano-particles

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Tunnel junction I(V) characteristics: Review and a new model for p-n homojunctions

N. Moulin; M. Amara; F. Mandorlo; M. Lemiti

J. Appl. Phys. 126, 033105 (2019) https://doi.org/10.1063/1.5104314

Abstract

View articletitled, Tunnel junction I(V) characteristics: Review and a new model for p-n homojunctions

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Dielectrics, Ferroelectrics, and Multiferroics

Effect of stresses on the dielectric and piezoelectric properties of Pb(Zr_0.52Ti_0.48)O₃ thin films

K. Coleman; J. Walker; T. Beechem; S. Trolier-McKinstry

J. Appl. Phys. 126, 034101 (2019) https://doi.org/10.1063/1.5095765

Abstract

View articletitled, Effect of stresses on the dielectric and piezoelectric properties of Pb(Zr0.52Ti0.48)O3 thin films

Supplementary Material

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CHORUS

Comparison of atomic layer deposited Al₂O₃ and (Ta₂O₅)_0.12(Al₂O₃)_0.88 gate dielectrics on the characteristics of GaN-capped AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors

T. Partida-Manzanera; Z. H. Zaidi; J. W. Roberts; S. B. Dolmanan; K. B. Lee; P. A. Houston; P. R. Chalker; S. Tripathy; R. J. Potter

J. Appl. Phys. 126, 034102 (2019) https://doi.org/10.1063/1.5049220

Abstract

View articletitled, Comparison of atomic layer deposited Al2O3 and (Ta2O5)0.12(Al2O3)0.88 gate dielectrics on the characteristics of GaN-capped AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors

Supplementary Material

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Physics of Nanoscale, Mesoscale, and Low-Dimensional Systems

Numerical simulation of the bubble dynamics in a bifurcated micro-channel using the lattice Boltzmann method

Qin Lou; Tao Li; Mo Yang

J. Appl. Phys. 126, 034301 (2019) https://doi.org/10.1063/1.5109006

Abstract

View articletitled, Numerical simulation of the bubble dynamics in a bifurcated micro-channel using the lattice Boltzmann method

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Thermal effects on laser-assisted field evaporation from a Si surface: A real-time first-principles study

Kazuki Uchida; Yasumitsu Suzuki; Kazuyuki Watanabe

J. Appl. Phys. 126, 034302 (2019) https://doi.org/10.1063/1.5090949

Abstract

View articletitled, Thermal effects on laser-assisted field evaporation from a Si surface: A real-time first-principles study

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Emerging, Interdisciplinary, and Other Fields of Applied Physics

Fe-intercalated few layers reduced graphene oxide: A unique material for supercapacitor applications

Milon Miah; Tapas Kumar Mondal; Shatabda Bhattacharya; Shyamal K. Saha

J. Appl. Phys. 126, 034901 (2019) https://doi.org/10.1063/1.5100815

Abstract

View articletitled, Fe-intercalated few layers reduced graphene oxide: A unique material for supercapacitor applications

Supplementary Material

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Acoustic birefringence via non-Eulerian metamaterials

Farzad Zangeneh-Nejad; Romain Fleury

J. Appl. Phys. 126, 034902 (2019) https://doi.org/10.1063/1.5090839

Abstract

View articletitled, Acoustic birefringence via non-Eulerian metamaterials

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Physics of Materials, Including Electrical, Thermal, Mechanical and Other Properties

First-principle investigation of the charge injection barriers of polyethylene and polytetrafluoroethylene oligomers

Xi Chen; Aixuan Zhao; Jiaming Li; Junbo Deng; Guanjun Zhang; Xuefeng Zhao

J. Appl. Phys. 126, 035101 (2019) https://doi.org/10.1063/1.5089863

Abstract

View articletitled, First-principle investigation of the charge injection barriers of polyethylene and polytetrafluoroethylene oligomers

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Tunability of localization length in naphthalene sulfonic acid doped polyaniline/nickel ferrite composite nanorods system

Madhumita Bhaumik; Arjun Maity; T. S. Mahule; V. V. Srinivasu

J. Appl. Phys. 126, 035102 (2019) https://doi.org/10.1063/1.5085161

Abstract

View articletitled, Tunability of localization length in naphthalene sulfonic acid doped polyaniline/nickel ferrite composite nanorods system

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Measurement of the temperature dependence of lattice deformations in silicon using Raman microscopy

S. Herold; J. Acker

J. Appl. Phys. 126, 035103 (2019) https://doi.org/10.1063/1.5090476

Abstract

View articletitled, Measurement of the temperature dependence of lattice deformations in silicon using Raman microscopy

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Reduction of interlayer friction between bilayer hexagonal boron nitride nanosheets induced by electron redistribution

Jing Zhang; Yongqing Bai; Lulu An; Bin Zhang; Junyan Zhang; Yuanlie Yu; Chun-Ming Wang

J. Appl. Phys. 126, 035104 (2019) https://doi.org/10.1063/1.5099392

Abstract

View articletitled, Reduction of interlayer friction between bilayer hexagonal boron nitride nanosheets induced by electron redistribution

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Atomistic modelling of diamond-type Si_xGe_yC_zSn_{1−x−y−z} crystals for realistic transmission electron microscopy image simulations

Leonard Jaillet; Cyril Guedj; Stephane Redon

J. Appl. Phys. 126, 035105 (2019) https://doi.org/10.1063/1.5099222

Abstract

View articletitled, Atomistic modelling of diamond-type SixGeyCzSn1−x−y−z crystals for realistic transmission electron microscopy image simulations

Supplementary Material

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Effects of metal silicide inclusion interface and shape on thermal transport in silicon nanocomposites

In Special Collection: Advanced Thermoelectrics

Laia Ferrer-Argemi; Ziqi Yu; Jaeho Lee

J. Appl. Phys. 126, 035106 (2019) https://doi.org/10.1063/1.5099507

Abstract

View articletitled, Effects of metal silicide inclusion interface and shape on thermal transport in silicon nanocomposites

Supplementary Material

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CHORUS

Tunable elastic metamaterials using rotatable coupled dual-beam resonators

Xu-Feng Lv; Kuo-Chih Chuang; Alper Erturk

J. Appl. Phys. 126, 035107 (2019) https://doi.org/10.1063/1.5099324

Abstract

View articletitled, Tunable elastic metamaterials using rotatable coupled dual-beam resonators

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Intrinsic current overshoot during thermal-runaway threshold switching events in TaO_x devices

Jonathan M. Goodwill; Marek Skowronski

J. Appl. Phys. 126, 035108 (2019) https://doi.org/10.1063/1.5087560

Abstract

View articletitled, Intrinsic current overshoot during thermal-runaway threshold switching events in TaOx devices

Supplementary Material

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CHORUS

Optimal band gap for improved thermoelectric performance of two-dimensional Dirac materials

Eddwi H. Hasdeo; Lukas P. A. Krisna; Muhammad Y. Hanna; Bobby E. Gunara; Nguyen T. Hung; Ahmad R. T. Nugraha

J. Appl. Phys. 126, 035109 (2019) https://doi.org/10.1063/1.5100985

Abstract

View articletitled, Optimal band gap for improved thermoelectric performance of two-dimensional Dirac materials

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Using pressure to probe thermodynamic anomalies in tetrahedrally-bonded materials

Jihui Nie; Sylwester Porowski; Pawel Keblinski

J. Appl. Phys. 126, 035110 (2019) https://doi.org/10.1063/1.5097626

Abstract

View articletitled, Using pressure to probe thermodynamic anomalies in tetrahedrally-bonded materials

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Thin Films, Interfaces, and Surfaces

Tuning of electronic and magnetic properties of multifunctional r-GO-ATA-Fe₂O₃-composites for magnetic resonance imaging (MRI) contrast agent

In Special Collection: Magnetic and Plasmonic Nanoparticles for Biomedical Devices

David O. Idisi; J. A. Oke; Sweety Sarma; S. J. Moloi; Sekhar C. Ray; W. F. Pong; André M. Strydom

J. Appl. Phys. 126, 035301 (2019) https://doi.org/10.1063/1.5099892

Abstract

View articletitled, Tuning of electronic and magnetic properties of multifunctional r-GO-ATA-Fe2O3-composites for magnetic resonance imaging (MRI) contrast agent

Supplementary Material

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Drop deposition affected by electrowetting in direct ink writing process

J.-M. Löwe; J. Plog; Y. Jiang; Y. Pan; A. L. Yarin

J. Appl. Phys. 126, 035302 (2019) https://doi.org/10.1063/1.5109385

Abstract

View articletitled, Drop deposition affected by electrowetting in direct ink writing process

Supplementary Material

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CHORUS

Defects, conductivity and photoconductivity in Ar⁺ bombarded KTaO $_{3}$

Ruchi Tomar; Neha Wadehra; Shelender Kumar; Ananth Venkatesan; D. D. Sarma; Denis Maryenko; S. Chakraverty

J. Appl. Phys. 126, 035303 (2019) https://doi.org/10.1063/1.5099546

Abstract

View articletitled, Defects, conductivity and photoconductivity in Ar+ bombarded KTaO<math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mrow></mrow><mn>3</mn></msub></math>

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Insights into the interfacial bonding strength of TiB/Ti: A first principles study

Rui Fan; Qiwen Zheng; Yue Liu; Tongxiang Fan

J. Appl. Phys. 126, 035304 (2019) https://doi.org/10.1063/1.5109647

Abstract

View articletitled, Insights into the interfacial bonding strength of TiB/Ti: A first principles study

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Organic-Inorganic Systems, including Organic Electronics

Charge transport in an organic light emitting diode material measured using metal-insulator-semiconductor charge extraction by linearly increasing voltage with parameter variation

Mile Gao; Paul L. Burn; Almantas Pivrikas

J. Appl. Phys. 126, 035501 (2019) https://doi.org/10.1063/1.5100313

Abstract

View articletitled, Charge transport in an organic light emitting diode material measured using metal-insulator-semiconductor charge extraction by linearly increasing voltage with parameter variation

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Physics of Semiconductors

Electron scattering mechanisms in polycrystalline sputtered zinc tin oxynitride thin films

Dylan C. Hamilton; Elisabetta Arca; Jie Pan; Sebastian Siol; Matthew Young; Stephan Lany; Andriy Zakutayev

J. Appl. Phys. 126, 035701 (2019) https://doi.org/10.1063/1.5087408

Abstract

View articletitled, Electron scattering mechanisms in polycrystalline sputtered zinc tin oxynitride thin films

Supplementary Material

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CHORUS

Tin-based donors in SiSn alloys

L. Scheffler; S. Roesgaard; J. L. Hansen; A. Nylandsted Larsen; B. Julsgaard

J. Appl. Phys. 126, 035702 (2019) https://doi.org/10.1063/1.5099415

Abstract

View articletitled, Tin-based donors in SiSn alloys

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Band gap bowing for high In content InAlN films

Richard C. Cramer; Erin C. H. Kyle; James S. Speck

J. Appl. Phys. 126, 035703 (2019) https://doi.org/10.1063/1.5089671

Abstract

View articletitled, Band gap bowing for high In content InAlN films

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CHORUS

Charge carrier injection and transport in QLED layer with dynamic equilibrium of trapping/de-trapping carriers

Sun-Kyo Kim; Yong-Seog Kim

J. Appl. Phys. 126, 035704 (2019) https://doi.org/10.1063/1.5109089

Abstract

View articletitled, Charge carrier injection and transport in QLED layer with dynamic equilibrium of trapping/de-trapping carriers

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Topological and electrical properties of capped and annealed (0001) hydride vapor phase epitaxy GaN films on sapphire

Michael A. Derenge; Kenneth A. Jones

J. Appl. Phys. 126, 035705 (2019) https://doi.org/10.1063/1.5092437

Abstract

View articletitled, Topological and electrical properties of capped and annealed (0001) hydride vapor phase epitaxy GaN films on sapphire

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CHORUS

ERRATA

Erratum: “Voltage-input spintronic oscillator based on competing effect for extended oscillation regions” [J. Appl. Phys. 125, 183902 (2019)]

Zhifeng Zhu; Jiefang Deng; Xuanyao Fong; Gengchiau Liang

J. Appl. Phys. 126, 039901 (2019) https://doi.org/10.1063/1.5116611

Extract

View articletitled, Erratum: “Voltage-input spintronic oscillator based on competing effect for extended oscillation regions” [J. Appl. Phys. 125, 183902 (2019)]

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Issues

Cover Image

ARTICLES

Photonics, Plasmonics, Photovoltaics, Lasers, Optical Materials and Phenomena

Dielectrics, Ferroelectrics, and Multiferroics

Physics of Nanoscale, Mesoscale, and Low-Dimensional Systems

Emerging, Interdisciplinary, and Other Fields of Applied Physics

Physics of Materials, Including Electrical, Thermal, Mechanical and Other Properties

Thin Films, Interfaces, and Surfaces

Organic-Inorganic Systems, including Organic Electronics

Physics of Semiconductors

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