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Terahertz field confinement and enhancement in various sub-wavelength structures
J. Appl. Phys. 126, 120901 (2019)
https://doi.org/10.1063/1.5110046
ARTICLES
Photonics, Plasmonics, Photovoltaics, Lasers, Optical Materials and Phenomena
Investigation of plasmon-induced transparency and reflection in patterned graphene metamaterial
J. Appl. Phys. 126, 123101 (2019)
https://doi.org/10.1063/1.5113669
Nanoscale characterization of photonic metasurface made of lens-like SiGe Mie-resonators formed on Si (100) substrate
In Special Collection:
Dielectric Nanoresonators and Metamaterials
J. Appl. Phys. 126, 123102 (2019)
https://doi.org/10.1063/1.5103179
Electrical Discharges, Plasmas, and Plasma-Surface Interactions
Effects of the extraction voltage on the beam divergence for a H− ion source
J. Appl. Phys. 126, 123303 (2019)
https://doi.org/10.1063/1.5116413
Magnetism, Spintronics, and Superconductivity
Spin-glass features at multiple temperatures and transport anomalies in Tb4PtAl
J. Appl. Phys. 126, 123906 (2019)
https://doi.org/10.1063/1.5121293
Dielectrics, Ferroelectrics, and Multiferroics
Structure and domain wall dynamics in lead-free KNN-based ceramics
J. Appl. Phys. 126, 124101 (2019)
https://doi.org/10.1063/1.5119738
Morphotropic phase boundary-like properties in a ferroelectric-paraelectric nanocomposite
J. Appl. Phys. 126, 124102 (2019)
https://doi.org/10.1063/1.5113623
Physics of Nanoscale, Mesoscale, and Low-Dimensional Systems
Phonon-assisted cyclotron resonance in Pöschl-Teller quantum well
J. Appl. Phys. 126, 124301 (2019)
https://doi.org/10.1063/1.5103187
Depth-sensing using AFM contact-resonance imaging and spectroscopy at the nanoscale
J. Appl. Phys. 126, 124302 (2019)
https://doi.org/10.1063/1.5113567
Non-destructive characterization of thin layer resonant tunneling diodes
In Special Collection:
Highly Mismatched Semiconductors Alloys: from Atoms to Devices
Răzvan Baba; Kristof J. P. Jacobs; Brett A. Harrison; Ben J. Stevens; Toshikazu Mukai; Richard A. Hogg
J. Appl. Phys. 126, 124304 (2019)
https://doi.org/10.1063/1.5113585
Nonreciprocity and thermoelectric performance in a double-dot Aharonov–Bohm interferometer
J. Appl. Phys. 126, 124305 (2019)
https://doi.org/10.1063/1.5111181
Modeling ballistic phonon transport from a cylindrical electron beam heat source
J. Appl. Phys. 126, 124306 (2019)
https://doi.org/10.1063/1.5115165
Compositional accuracy in atom probe tomography analyses performed on III-N light emitting diodes
E. Di Russo; N. Cherkashin; M. Korytov; A. E. Nikolaev; A. V. Sakharov; A. F. Tsatsulnikov; B. Bonef; I. Blum; J. Houard; G. Da Costa; D. Blavette; L. Rigutti
J. Appl. Phys. 126, 124307 (2019)
https://doi.org/10.1063/1.5113799
Radioactively driven colloids: A special case of anomalous diffusion
J. Appl. Phys. 126, 124308 (2019)
https://doi.org/10.1063/1.5116220
Physics of Devices and Sensors
Conduction mechanisms in ZnO nanowires based Schottky diode grown under an electric field
J. Appl. Phys. 126, 124501 (2019)
https://doi.org/10.1063/1.5117171
Subpicotesla scalar atomic magnetometer with a microfabricated cell
J. Appl. Phys. 126, 124503 (2019)
https://doi.org/10.1063/1.5113520
Applied Biophysics
Emerging, Interdisciplinary, and Other Fields of Applied Physics
Fundamentals of three-dimensional Yb-fiber Nd:YAG laser machining of structural bone
J. Appl. Phys. 126, 124901 (2019)
https://doi.org/10.1063/1.5117145
Optically detected ferromagnetic resonance in diverse ferromagnets via nitrogen vacancy centers in diamond
M. R. Page; B. A. McCullian; C. M. Purser; J. G. Schulze; T. M. Nakatani; C. S. Wolfe; J. R. Childress; M. E. McConney; B. M. Howe; P. C. Hammel; V. P. Bhallamudi
J. Appl. Phys. 126, 124902 (2019)
https://doi.org/10.1063/1.5083991
Physics of Materials, Including Electrical, Thermal, Mechanical and Other Properties
Measurement of the size of micrometric voids in dielectric media
J. Appl. Phys. 126, 125103 (2019)
https://doi.org/10.1063/1.5110258
Space-charge-induced Seebeck effect in solid dielectrics
In Special Collection:
Advanced Thermoelectrics
J. Appl. Phys. 126, 125106 (2019)
https://doi.org/10.1063/1.5117190
Magnon drag effect in Fe-Co alloys
In Special Collection:
Advanced Thermoelectrics
J. Appl. Phys. 126, 125107 (2019)
https://doi.org/10.1063/1.5117165
Large enhancement of thermoelectric performance of InTe compound by sintering and CuInTe2 doping
J. Appl. Phys. 126, 125108 (2019)
https://doi.org/10.1063/1.5117500
A model of hardness and fracture toughness of solids
In Special Collection:
Ultra-Hard Materials
J. Appl. Phys. 126, 125109 (2019)
https://doi.org/10.1063/1.5113622
Spinodal decomposition in (Ti, Zr)CoSb half-Heusler: A nanostructuring route toward high efficiency thermoelectric materials
In Special Collection:
Advanced Thermoelectrics
Nagendra S. Chauhan; Sivaiah Bathula; Bhasker Gahtori; Yury V. Kolen’ko; Radhey Shyam; N. K. Upadhyay; Ajay Dhar
J. Appl. Phys. 126, 125110 (2019)
https://doi.org/10.1063/1.5109091
Thermoelectric generator at optimal power with external and internal irreversibilities
J. Appl. Phys. 126, 125111 (2019)
https://doi.org/10.1063/1.5109464
Collective dynamics of capacitively coupled oscillators based on NbO2 memristors
J. Appl. Phys. 126, 125112 (2019)
https://doi.org/10.1063/1.5116777
Negative thermal expansion behavior in orthorhombic Sc2(MoO4)3 and Sc2(WO4)3
J. Appl. Phys. 126, 125114 (2019)
https://doi.org/10.1063/1.5115318
The structure and thermoelectric properties of tungsten bronze Ba6Ti2Nb8O30
In Special Collection:
Advanced Thermoelectrics
Dongting Jiang; Dursun Ekren; Feridoon Azough; Sarah J. Day; Kan Chen; Amit Mahajan; Demie M. Kepaptsoglou; Quentin M. Ramasse; Michael J. Reece; Robert Freer
J. Appl. Phys. 126, 125115 (2019)
https://doi.org/10.1063/1.5119962
The grain-size effect on thermal conductivity of uranium dioxide
J. Appl. Phys. 126, 125116 (2019)
https://doi.org/10.1063/1.5116372
Site discrimination and size effect of B-doping in Si nanocrystals by second-neighbor atom consideration
J. Appl. Phys. 126, 125117 (2019)
https://doi.org/10.1063/1.5110659
Effects of alloying elements and temperature on thermal conductivity of ferrite
J. Appl. Phys. 126, 125118 (2019)
https://doi.org/10.1063/1.5115441
Thin Films, Interfaces, and Surfaces
First-principles study of monolayer Be2C as an anode material for lithium-ion batteries
J. Appl. Phys. 126, 125302 (2019)
https://doi.org/10.1063/1.5110225
Ιn situ N2-NH3 plasma pre-treatment of silicon substrate enhances the initial growth and restricts the substrate oxidation during alumina ALD
Georgios P. Gakis; Hugues Vergnes; Fuccio Cristiano; Yann Tison; Constantin Vahlas; Brigitte Caussat; Andreas G. Boudouvis; Emmanuel Scheid
J. Appl. Phys. 126, 125305 (2019)
https://doi.org/10.1063/1.5113755
Study of TaN and TaN-Ta-TaN thin films as diffusion barriers in CeFe4Sb12 skutterudite
In Special Collection:
Advanced Thermoelectrics
J. Appl. Phys. 126, 125306 (2019)
https://doi.org/10.1063/1.5105385
Nano-to-micro diamond formation by nanosecond pulsed laser annealing
J. Appl. Phys. 126, 125307 (2019)
https://doi.org/10.1063/1.5118890
Organic-Inorganic Systems, including Organic Electronics
Role of device architecture and AlOX interlayer in organic Schottky diodes and their interpretation by analytical modeling
Nikita Kumari; Manish Pandey; Kengo Hamada; Daisuke Hirotani; Shuichi Nagamatsu; Shuzi Hayase; Shyam S. Pandey
J. Appl. Phys. 126, 125501 (2019)
https://doi.org/10.1063/1.5109083
Physics of Semiconductors
Some characteristics of elastic waves in a piezoelectric semiconductor plate
J. Appl. Phys. 126, 125701 (2019)
https://doi.org/10.1063/1.5116662
Electronic structure and transport in amorphous metal oxide and amorphous metal oxynitride semiconductors
J. Appl. Phys. 126, 125702 (2019)
https://doi.org/10.1063/1.5096042
A study of defect structures in Fe-alloyed ZnO: Morphology, magnetism, and hyperfine interactions
Valentin N. Ivanovski; Jelena Belošević-Čavor; Vladimir Rajić; Ana Umićević; Smilja Marković; Vladan Kusigerski; Miodrag Mitrić; Vasil Koteski
J. Appl. Phys. 126, 125703 (2019)
https://doi.org/10.1063/1.5095837
Interactions of intrinsic defects formed in ZnO and their contribution to electric conductivity
J. Appl. Phys. 126, 125704 (2019)
https://doi.org/10.1063/1.5120887
Theoretical correlation and effect of annealing on the photoresponse of vertically strain-coupled In0.5Ga0.5As/GaAs quantum dot heterostructures
Debiprasad Panda; Jhuma Saha; Debabrata Das; Sandeep M. Singh; Harshal Rawool; Subhananda Chakrabarti
J. Appl. Phys. 126, 125705 (2019)
https://doi.org/10.1063/1.5113528
A comparative study of epitaxial InGaAsBi/InP structures using Rutherford backscattering spectrometry, X-ray diffraction and photoluminescence techniques
In Special Collection:
Highly Mismatched Semiconductors Alloys: from Atoms to Devices
M. K. Sharpe; I. P. Marko; D. A. Duffy; J. England; E. Schneider; M. Kesaria; V. Fedorov; E. Clarke; C. H. Tan; S. J. Sweeney
J. Appl. Phys. 126, 125706 (2019)
https://doi.org/10.1063/1.5109653
Role of intrinsic and extrinsic defects in H implanted hydrothermally grown ZnO
In Special Collection:
Defects in Semiconductors 2020
J. Appl. Phys. 126, 125707 (2019)
https://doi.org/10.1063/1.5115597
Effects of InAlN underlayer on deep traps detected in near-UV InGaN/GaN single quantum well light-emitting diodes
In Special Collection:
Defects in Semiconductors 2020
A. Y. Polyakov; C. Haller; N. B. Smirnov; A. S. Shiko; I. V. Shchemerov; S. V. Chernykh; L. A. Alexanyan; P. B. Lagov; Yu. S. Pavlov; J.-F. Carlin; M. Mosca; R. Butté; N. Grandjean; S. J. Pearton
J. Appl. Phys. 126, 125708 (2019)
https://doi.org/10.1063/1.5122314
Electrically detected electron nuclear double resonance in 4H-SiC bipolar junction transistors
J. Appl. Phys. 126, 125709 (2019)
https://doi.org/10.1063/1.5108961
Physics of Matter under Extreme Conditions
Molecular dynamics simulations of silicon carbide nanowires under single-ion irradiation
J. Appl. Phys. 126, 125902 (2019)
https://doi.org/10.1063/1.5121873
Impulse coupling enhancement of aluminum targets under laser irradiation in a soft polymer confined geometry
C. Le Bras, E. Lescoute, et al.
A step-by-step guide to perform x-ray photoelectron spectroscopy
Grzegorz Greczynski, Lars Hultman
GaN-based power devices: Physics, reliability, and perspectives
Matteo Meneghini, Carlo De Santi, et al.