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Tutorial: Novel properties of defects in semiconductors revealed by their
vibrational spectra
Sb-induced strain fluctuations in a strained layer superlattice of InAs/InAsSb
Electrically-inactive phosphorus re-distribution during low temperature annealing
Weakly strained highly mismatched BxIn1-xBVyAs1-y (BV = Sb, Bi) alloys
Acousto–defect interaction in irradiated and non-irradiated silicon n+–p structures
PERSPECTIVES
Perspective: Toward efficient GaN-based red light emitting diodes using europium doping
J. Appl. Phys. 123, 160901 (2018)
https://doi.org/10.1063/1.5010762
TUTORIALS
Tutorial: Junction spectroscopy techniques and deep-level defects in semiconductors
J. Appl. Phys. 123, 161559 (2018)
https://doi.org/10.1063/1.5011327
Tutorial: Novel properties of defects in semiconductors revealed by their
vibrational spectra
J. Appl. Phys. 123, 161561 (2018)
https://doi.org/10.1063/1.5011036
PREFACE
Preface to Special Topic: Defects in Semiconductors
J. Appl. Phys. 123, 161301 (2018)
https://doi.org/10.1063/1.5036660
SPECIAL TOPIC: DEFECTS IN SEMICONDUCTORS
Dopant-driven enhancements in the optoelectronic properties of laser ablated ZnO: Ga thin films
J. Appl. Phys. 123, 161401 (2018)
https://doi.org/10.1063/1.5003686
Kinetics of cluster-related defects in silicon sensors irradiated with monoenergetic electrons
J. Appl. Phys. 123, 161402 (2018)
https://doi.org/10.1063/1.5011372
Suppression of Na interstitials in Na-F codoped ZnO
J. Appl. Phys. 123, 161403 (2018)
https://doi.org/10.1063/1.5003475
Quantitative analysis of the persistent photoconductivity effect in Cu(In,Ga)Se2
J. Appl. Phys. 123, 161404 (2018)
https://doi.org/10.1063/1.5011430
The trap states in lightly Mg-doped GaN grown by MOVPE on a freestanding GaN substrate
J. Appl. Phys. 123, 161405 (2018)
https://doi.org/10.1063/1.5010849
Growth and optical characteristics of Tm-doped AlGaN layer grown by organometallic vapor phase epitaxy
J. Appl. Phys. 123, 161406 (2018)
https://doi.org/10.1063/1.5011303
Vanadium substitution: A simple and economic way to improve UV sensing in ZnO
J. Appl. Phys. 123, 161407 (2018)
https://doi.org/10.1063/1.5012877
Deep level defects in Ge-doped (010) β-Ga2O3 layers grown by plasma-assisted molecular beam epitaxy
J. Appl. Phys. 123, 161410 (2018)
https://doi.org/10.1063/1.5010608
Microwave assisted scalable synthesis of titanium ferrite nanomaterials
J. Appl. Phys. 123, 161411 (2018)
https://doi.org/10.1063/1.5008733
Defects controlling electrical and optical properties of electrodeposited Bi doped Cu2O
J. Appl. Phys. 123, 161412 (2018)
https://doi.org/10.1063/1.5007052
The origins and properties of intrinsic nonradiative recombination centers in wide bandgap GaN and AlGaN
J. Appl. Phys. 123, 161413 (2018)
https://doi.org/10.1063/1.5012994
Theoretical study of native point defects in strained-layer superlattice systems
J. Appl. Phys. 123, 161414 (2018)
https://doi.org/10.1063/1.5004176
Lifetime degradation of n-type Czochralski silicon after hydrogenation
J. Appl. Phys. 123, 161415 (2018)
https://doi.org/10.1063/1.5011351
Effect of edge defects on band structure of zigzag graphene nanoribbons
J. Appl. Phys. 123, 161416 (2018)
https://doi.org/10.1063/1.5011310
Defect properties of InGaAsN layers grown as sub-monolayer digital alloys by molecular beam epitaxy
J. Appl. Phys. 123, 161418 (2018)
https://doi.org/10.1063/1.5011371
Theoretical insights into the minority carrier lifetime of doped Si—A computational study
J. Appl. Phys. 123, 161420 (2018)
https://doi.org/10.1063/1.5010045
Structural, electronic, and optical properties of the C-C complex in bulk silicon from first principles
J. Appl. Phys. 123, 161421 (2018)
https://doi.org/10.1063/1.5010269
Suppression in the electrical hysteresis by using CaF2 dielectric layer for p-GaN MIS capacitors
J. Appl. Phys. 123, 161423 (2018)
https://doi.org/10.1063/1.5010952
Intrinsic luminescence and core structure of freshly introduced a-screw dislocations in n-GaN
J. Appl. Phys. 123, 161427 (2018)
https://doi.org/10.1063/1.5011368
Improved spatial resolution of luminescence images acquired with a silicon line scanning camera
J. Appl. Phys. 123, 161501 (2018)
https://doi.org/10.1063/1.4986803
First-principles study of native defects in bulk Sm2CuO4 and its (001) surface structure
J. Appl. Phys. 123, 161504 (2018)
https://doi.org/10.1063/1.4989482
Oxygen vacancy chain and conductive filament formation in hafnia
J. Appl. Phys. 123, 161505 (2018)
https://doi.org/10.1063/1.4989621
Diffusivity of the interstitial hydrogen shallow donor in In2O3
J. Appl. Phys. 123, 161506 (2018)
https://doi.org/10.1063/1.4995593
Investigation of thermal and optical properties on polysilicon by the photothermal deflection technique
J. Appl. Phys. 123, 161508 (2018)
https://doi.org/10.1063/1.4986514
Electronic structure and x-ray spectroscopy of Cu2MnAl1–xGax
J. Appl. Phys. 123, 161509 (2018)
https://doi.org/10.1063/1.4996650
Defect pair formation in fluorine and nitrogen codoped TiO2
J. Appl. Phys. 123, 161510 (2018)
https://doi.org/10.1063/1.5000025
Negative differential resistance observation in complex convoluted fullerene junctions
J. Appl. Phys. 123, 161511 (2018)
https://doi.org/10.1063/1.4985796
Optimization of the defects and the nonradiative lifetime of GaAs/AlGaAs double heterostructures
J. Appl. Phys. 123, 161512 (2018)
https://doi.org/10.1063/1.4986297
Electrically detected magnetic resonance of carbon dangling bonds at the Si-face 4H-SiC/SiO2 interface
J. Appl. Phys. 123, 161514 (2018)
https://doi.org/10.1063/1.4985856
Self-diffusion in single crystalline silicon nanowires
J. Appl. Phys. 123, 161515 (2018)
https://doi.org/10.1063/1.4996987
Thermodynamic, electronic, and magnetic properties of intrinsic vacancy defects in antiperovskite Ca3SnO
J. Appl. Phys. 123, 161516 (2018)
https://doi.org/10.1063/1.4994998
Neutral beam and ICP etching of HKMG MOS capacitors: Observations and a plasma-induced damage model
J. Appl. Phys. 123, 161517 (2018)
https://doi.org/10.1063/1.4985852
Intrinsic point defects in off-stoichiometric Cu2ZnSnSe4: A neutron diffraction study
J. Appl. Phys. 123, 161519 (2018)
https://doi.org/10.1063/1.4997402
Thermal quenching of the yellow luminescence in GaN
J. Appl. Phys. 123, 161520 (2018)
https://doi.org/10.1063/1.4995275
Sb-induced strain fluctuations in a strained layer superlattice of InAs/InAsSb
J. Appl. Phys. 123, 161521 (2018)
https://doi.org/10.1063/1.4993673
Surface acceptor states in MBE-grown CdTe layers
J. Appl. Phys. 123, 161522 (2018)
https://doi.org/10.1063/1.4986157
Comprehensive electrical analysis of metal/Al2O3/O-terminated diamond capacitance
J. Appl. Phys. 123, 161523 (2018)
https://doi.org/10.1063/1.4996114
Sb-related defects in Sb-doped ZnO thin film grown by pulsed laser deposition
J. Appl. Phys. 123, 161525 (2018)
https://doi.org/10.1063/1.4997510
Thermodynamic modelling of fast dopant diffusion in Si
J. Appl. Phys. 123, 161527 (2018)
https://doi.org/10.1063/1.5001755
Identification of F impurities in F-doped ZnO by synchrotron X-ray absorption near edge structures
J. Appl. Phys. 123, 161528 (2018)
https://doi.org/10.1063/1.4997356
Origin of large dark current increase in InGaAs/InP avalanche photodiode
J. Appl. Phys. 123, 161530 (2018)
https://doi.org/10.1063/1.4999646
GaAsP/InGaP HBTs grown epitaxially on Si substrates: Effect of dislocation density on DC current gain
J. Appl. Phys. 123, 161532 (2018)
https://doi.org/10.1063/1.5001038
Engineering of electronic properties of single layer graphene by swift heavy ion irradiation
J. Appl. Phys. 123, 161533 (2018)
https://doi.org/10.1063/1.4991990
Electrical properties of metal/Al2O3/In0.53Ga0.47As capacitors grown on InP
J. Appl. Phys. 123, 161534 (2018)
https://doi.org/10.1063/1.5007920
Electrically-inactive phosphorus re-distribution during low temperature annealing
J. Appl. Phys. 123, 161535 (2018)
https://doi.org/10.1063/1.5002627
Thermally stimulated capacitance in gamma irradiated epitaxial 4H-SiC Schottky barrier diodes
J. Appl. Phys. 123, 161536 (2018)
https://doi.org/10.1063/1.5003068
Oxygen vibrational modes in ZnS1−xOx alloys
J. Appl. Phys. 123, 161537 (2018)
https://doi.org/10.1063/1.4998748
Blocking germanium diffusion inside silicon dioxide using a co-implanted silicon barrier
J. Appl. Phys. 123, 161540 (2018)
https://doi.org/10.1063/1.5002693
Blue emission in photoluminescence spectra of the red phosphor CaAlSiN3:Eu2+ at low Eu2+ concentration
J. Appl. Phys. 123, 161542 (2018)
https://doi.org/10.1063/1.5004481
Recombination properties of dislocations in GaN
J. Appl. Phys. 123, 161543 (2018)
https://doi.org/10.1063/1.4995580
The role of hydrogen and oxygen in the persistent photoconductivity of strontium titanate
J. Appl. Phys. 123, 161545 (2018)
https://doi.org/10.1063/1.5009596
Fibrous structure in GaSb surfaces irradiated with fast Cu cluster ions
J. Appl. Phys. 123, 161548 (2018)
https://doi.org/10.1063/1.5002084
Spectroscopic study of native defects in the semiconductor to metal phase transition in V2O5 nanostructure
J. Appl. Phys. 123, 161550 (2018)
https://doi.org/10.1063/1.5011112
Density of bunched threading dislocations in epitaxial GaN layers as determined using X-ray diffraction
J. Appl. Phys. 123, 161552 (2018)
https://doi.org/10.1063/1.5009521
3D analysis of semiconductor devices: A combination of 3D imaging and 3D elemental analysis
J. Appl. Phys. 123, 161554 (2018)
https://doi.org/10.1063/1.5010186
Optically reversible electrical soft-breakdown in wide-bandgap oxides—A factorial study
J. Appl. Phys. 123, 161555 (2018)
https://doi.org/10.1063/1.5002606
Enhanced vibronic interaction caused by local lattice symmetry lowering in the (Fe, Mg)As2 ternary system
J. Appl. Phys. 123, 161557 (2018)
https://doi.org/10.1063/1.5010728
The effect of stoichiometry on Cu-Zn ordering kinetics in Cu2ZnSnS4 thin films
J. Appl. Phys. 123, 161558 (2018)
https://doi.org/10.1063/1.5010081
Mechanism of Na accumulation at extended defects in Si from first-principles
J. Appl. Phys. 123, 161560 (2018)
https://doi.org/10.1063/1.5003385
Weakly strained highly mismatched BxIn1-xBVyAs1-y (BV = Sb, Bi) alloys
J. Appl. Phys. 123, 161564 (2018)
https://doi.org/10.1063/1.4999718
Defects induced by solid state reactions at the tungsten-silicon carbide interface
J. Appl. Phys. 123, 161565 (2018)
https://doi.org/10.1063/1.5011242
Magnetic phase change in Mn-doped ZnSnAs2 thin films depending on Mn concentration
J. Appl. Phys. 123, 161566 (2018)
https://doi.org/10.1063/1.5007799
Electrodeposited Cu2O doped with Cl: Electrical and optical properties
J. Appl. Phys. 123, 161567 (2018)
https://doi.org/10.1063/1.5004782
Defect-induced instability mechanisms of sputtered amorphous indium tin zinc oxide thin-film transistors
J. Appl. Phys. 123, 161568 (2018)
https://doi.org/10.1063/1.5004148
Preferential nucleation, guiding, and blocking of self-propelled droplets by dislocations
J. Appl. Phys. 123, 161570 (2018)
https://doi.org/10.1063/1.5008784
Optical studies of native defects in π-conjugated donor–acceptor copolymers
J. Appl. Phys. 123, 161571 (2018)
https://doi.org/10.1063/1.5012995
Influence of annealing atmosphere on formation of electrically-active defects in rutile TiO2
J. Appl. Phys. 123, 161572 (2018)
https://doi.org/10.1063/1.5011136
Acousto–defect interaction in irradiated and non-irradiated silicon n+–p structures
J. Appl. Phys. 123, 161573 (2018)
https://doi.org/10.1063/1.5001123
First-principles study of giant thermoelectric power in incommensurate TlInSe2
J. Appl. Phys. 123, 161575 (2018)
https://doi.org/10.1063/1.5011337
Effect of electron injection on defect reactions in irradiated silicon containing boron, carbon, and oxygen
J. Appl. Phys. 123, 161576 (2018)
https://doi.org/10.1063/1.5010965
p-type doping efficiency in CdTe: Influence of second phase formation
J. Appl. Phys. 123, 161579 (2018)
https://doi.org/10.1063/1.5002144
Electron spin resonance study of surface and oxide interface spin-triplet centers on (100) silicon wafers
J. Appl. Phys. 123, 161582 (2018)
https://doi.org/10.1063/1.5010816
Piezospectroscopy and first-principles calculations of the nitrogen-vacancy center in gallium arsenide
J. Appl. Phys. 123, 161583 (2018)
https://doi.org/10.1063/1.5011302
Electronic structure, defect formation energy, and photovoltaic properties of wurtzite-derived CuGaO2
J. Appl. Phys. 123, 161584 (2018)
https://doi.org/10.1063/1.5011087
Computational study of the absorption spectrum of defected ZnS nanoparticles
J. Appl. Phys. 123, 161587 (2018)
https://doi.org/10.1063/1.5005589
Structural and electronic properties of isovalent boron atoms in GaAs
J. Appl. Phys. 123, 161589 (2018)
https://doi.org/10.1063/1.5011166
Electron spin resonance identification di-carbon-related centers in irradiated silicon
J. Appl. Phys. 123, 161592 (2018)
https://doi.org/10.1063/1.5010234
