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Issues
7 December 2016
ISSN 0021-8979
EISSN 1089-7550
In this Issue
ARTICLES
Photonics, Plasmonics, Photovoltaics, Lasers, Optical Materials and Phenomena
Exciton delocalization incorporated drift-diffusion model for bulk-heterojunction organic solar cells
J. Appl. Phys. 120, 213101 (2016)
https://doi.org/10.1063/1.4970958
Ramifications of codoping SrI2:Eu with isovalent and aliovalent impurities
J. Appl. Phys. 120, 213104 (2016)
https://doi.org/10.1063/1.4971180
Electrical Discharges, Plasmas, and Plasma-Surface Interactions
Theoretical analysis of 1D resonant tunneling behavior in ion-enhanced cold field and thermo-field emission
J. Appl. Phys. 120, 213301 (2016)
https://doi.org/10.1063/1.4971263
Modeling of reduced effective secondary electron emission yield from a velvet surface
J. Appl. Phys. 120, 213302 (2016)
https://doi.org/10.1063/1.4971337
Magnetism, Spintronics, and Superconductivity
Controlling energy transfer time between two coupled magnetic vortex-state disks
J. Appl. Phys. 120, 213901 (2016)
https://doi.org/10.1063/1.4971342
Dielectrics, Ferroelectrics, and Multiferroics
Polarization states and dielectric responses of elastically clamped ferroelectric nanocrystals
J. Appl. Phys. 120, 214103 (2016)
https://doi.org/10.1063/1.4969048
Effect of Nb and more Fe ions co-doping on the microstructures, magnetic, and piezoelectric properties of Aurivillius Bi5Ti3FeO15 phases
Chao Chen; Kun Song; Wei Bai; Jing Yang; Yuanyuan Zhang; Pinghua Xiang; Muyang Qin; Xiaodong Tang; Junhao Chu
J. Appl. Phys. 120, 214104 (2016)
https://doi.org/10.1063/1.4971256
Influence of 90° charged domain walls on the electrocaloric effect in PbTiO3 ferroelectric thin films
J. Appl. Phys. 120, 214105 (2016)
https://doi.org/10.1063/1.4971400
Structural transition and its effect in La, Zr co-substituted mono-domain BiFeO3
J. Appl. Phys. 120, 214106 (2016)
https://doi.org/10.1063/1.4969047
Physics of Nanoscale, Mesoscale, and Low-Dimensional Systems
Mechanism of stabilization and magnetization of impurity-doped zigzag graphene nanoribbons
J. Appl. Phys. 120, 214301 (2016)
https://doi.org/10.1063/1.4971175
Density and localized states' impact on amorphous carbon electron transport mechanisms
J. Appl. Phys. 120, 214303 (2016)
https://doi.org/10.1063/1.4971010
Smart viscoelastic and self-healing characteristics of graphene nano-gels
J. Appl. Phys. 120, 214304 (2016)
https://doi.org/10.1063/1.4971267
Physics of Devices and Sensors
Mode selection for electrostatic beam resonators based on motional resistance and quality factor
J. Appl. Phys. 120, 214501 (2016)
https://doi.org/10.1063/1.4971249
Emerging, Interdisciplinary, and Other Fields of Applied Physics
Physics of Materials, Including Electrical, Thermal, Mechanical and Other Properties
Charged vacancy diffusion in chromium oxide crystal: DFT and DFT+U predictions
J. Appl. Phys. 120, 215101 (2016)
https://doi.org/10.1063/1.4970882
Flow units perspective on elastic recovery under sharp contact loading in metallic glasses
J. Appl. Phys. 120, 215104 (2016)
https://doi.org/10.1063/1.4971405
SET and RESET states of As2Se3 doped GeTe4 bulk glasses probed by Raman spectroscopy
J. Appl. Phys. 120, 215105 (2016)
https://doi.org/10.1063/1.4971253
Correlation between AC and DC transport properties of Mn substituted cobalt ferrite
J. Appl. Phys. 120, 215106 (2016)
https://doi.org/10.1063/1.4968795
Thin Films, Interfaces, and Surfaces
Simultaneous ohmic contacts to p- and n-type 4H-SiC by phase segregation annealing of co-sputtered Pt-Ti
J. Appl. Phys. 120, 215301 (2016)
https://doi.org/10.1063/1.4968572
Resistance given by tiling grain surface with micro surface structures in polycrystalline metal oxide
J. Appl. Phys. 120, 215302 (2016)
https://doi.org/10.1063/1.4969045
Organic-Inorganic Systems, including Organic Electronics
Analysis of the PEDOT:PSS/Si nanowire hybrid solar cell with a tail state model
J. Appl. Phys. 120, 215501 (2016)
https://doi.org/10.1063/1.4970827
Charge transfer at organic-inorganic interfaces—Indoline layers on semiconductor substrates
J. Appl. Phys. 120, 215502 (2016)
https://doi.org/10.1063/1.4969041
Physics of Semiconductors
The study of ambipolar behavior in phosphorene field-effect transistors
J. Appl. Phys. 120, 215701 (2016)
https://doi.org/10.1063/1.4970851
Band gap engineering of ZnSnN2/ZnO (001) short-period superlattices via built-in electric field
J. Appl. Phys. 120, 215703 (2016)
https://doi.org/10.1063/1.4971176
Structural and electronic properties of wurtzite MgZnO and BeMgZnO alloys and their thermodynamic stability
J. Appl. Phys. 120, 215704 (2016)
https://doi.org/10.1063/1.4971177
The influence of capping layers on pore formation in Ge during ion implantation
J. Appl. Phys. 120, 215706 (2016)
https://doi.org/10.1063/1.4969051
First-principles study on native point defects of cubic cuprite Ag2O
J. Appl. Phys. 120, 215707 (2016)
https://doi.org/10.1063/1.4971764
A step-by-step guide to perform x-ray photoelectron spectroscopy
Grzegorz Greczynski, Lars Hultman
Selecting alternative metals for advanced interconnects
Jean-Philippe Soulié, Kiroubanand Sankaran, et al.
Explainable artificial intelligence for machine learning prediction of bandgap energies
Taichi Masuda, Katsuaki Tanabe