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7 January 2014
ISSN 0021-8979
EISSN 1089-7550
In this Issue
Announcement for Invited Papers from the 27th International Conference on Defects in Semiconductors, July 2013
INVITED PAPERS FROM THE 27TH INTERNATIONAL CONFERENCE ON DEFECTS IN SEMICONDUCTORS, JULY 2013
Contrasting the experimental properties of hydrogen in SnO2, In2O3, and TiO2
J. Appl. Phys. 115, 012001 (2014)
https://doi.org/10.1063/1.4837955
Defects in highly conductive ZnO for transparent electrodes and plasmonics
J. Appl. Phys. 115, 012002 (2014)
https://doi.org/10.1063/1.4837956
Similarity of Stranski-Krastanow growth of Ge/Si and SiGe/Si (001)
J. Appl. Phys. 115, 012003 (2014)
https://doi.org/10.1063/1.4837975
Donor levels of the divacancy-oxygen defect in silicon
J. Appl. Phys. 115, 012004 (2014)
https://doi.org/10.1063/1.4837995
Formation of carbon vacancy in 4H silicon carbide during high-temperature processing
J. Appl. Phys. 115, 012005 (2014)
https://doi.org/10.1063/1.4837996
On the capability of deep level transient spectroscopy for characterizing multi-crystalline silicon
J. Appl. Phys. 115, 012006 (2014)
https://doi.org/10.1063/1.4837997
On the low carrier lifetime edge zone in multicrystalline silicon ingots
J. Appl. Phys. 115, 012007 (2014)
https://doi.org/10.1063/1.4837998
Effect of low-temperature annealing on the electronic- and band-structures of (Ga,Mn)As epitaxial layers
J. Appl. Phys. 115, 012009 (2014)
https://doi.org/10.1063/1.4838036
Temperature dependence of defect-related photoluminescence in III-V and II-VI semiconductors
J. Appl. Phys. 115, 012010 (2014)
https://doi.org/10.1063/1.4838038
Hydrogen effects in dilute III-N-V alloys: From defect engineering to nanostructuring
J. Appl. Phys. 115, 012011 (2014)
https://doi.org/10.1063/1.4838056
Effects of hole localization on limiting p-type conductivity in oxide and nitride semiconductors
J. Appl. Phys. 115, 012014 (2014)
https://doi.org/10.1063/1.4838075
Preface
ARTICLES
Lasers, Optics, and Optoelectronics
Characterization of 2.3 μm GaInAsSb-based vertical-cavity surface-emitting laser structures using photo-modulated reflectance
G. M. T. Chai; T. J. C. Hosea; N. E. Fox; K. Hild; A. B. Ikyo; I. P. Marko; S. J. Sweeney; A. Bachmann; S. Arafin; M.-C. Amann
J. Appl. Phys. 115, 013102 (2014)
https://doi.org/10.1063/1.4861146
Study of gain and photoresponse characteristics for back-illuminated separate absorption and multiplication GaN avalanche photodiodes
Xiaodong Wang; Weida Hu; Ming Pan; Liwei Hou; Wei Xie; Jintong Xu; Xiangyang Li; Xiaoshuang Chen; Wei Lu
J. Appl. Phys. 115, 013103 (2014)
https://doi.org/10.1063/1.4861148
Plasmas and Electrical Discharges
Structural, Mechanical, Thermodynamic, and Optical Properties of Condensed Matter
Direct band gap optical emission from Ge islands grown on relaxed Si0.5Ge0.5/Si (100) substrate
J. Appl. Phys. 115, 013502 (2014)
https://doi.org/10.1063/1.4859599
Ignition characteristics of laser-ablated aluminum at shock pressures up to 2 GPa
J. Appl. Phys. 115, 013503 (2014)
https://doi.org/10.1063/1.4861153
Bauschinger effect in thin metal films: Discrete dislocation dynamics study
J. Appl. Phys. 115, 013507 (2014)
https://doi.org/10.1063/1.4861147
Electronic Structure and Transport
Electrical switching in a Fe-thiacrown molecular device
J. Appl. Phys. 115, 013702 (2014)
https://doi.org/10.1063/1.4859755
Electronic and optical properties of Ga3−xIn5+xSn2O16: An experimental and theoretical study
J. Appl. Phys. 115, 013703 (2014)
https://doi.org/10.1063/1.4861130
Phosphorus-doping-induced rectifying behavior in armchair graphene nanoribbons devices
J. Appl. Phys. 115, 013705 (2014)
https://doi.org/10.1063/1.4861176
Magnetism and Superconductivity
Effect of superconducting spacer layer thickness on magneto-transport and magnetic properties of La0.7Sr0.3MnO3/YBa2Cu3O7/La0.7Sr0.3MnO3 heterostructures
Minaxi Sharma; Pankaj K. Pandey; K. K. Sharma; Ravi Kumar; R. J. Choudhary; D. Venkateshwarlu; V. Ganesan
J. Appl. Phys. 115, 013901 (2014)
https://doi.org/10.1063/1.4861139
Superconducting and magneto-transport properties of BiS2 based superconductor PrO1-xFxBiS2 (x = 0 to 0.9)
J. Appl. Phys. 115, 013902 (2014)
https://doi.org/10.1063/1.4859535
Magnetic susceptibility measurement of solid oxygen at pressures up to 3.3 GPa
J. Appl. Phys. 115, 013903 (2014)
https://doi.org/10.1063/1.4859597
Enhanced ferromagnetic properties in Ho and Ni co-doped BiFeO3 ceramics
J. Appl. Phys. 115, 013904 (2014)
https://doi.org/10.1063/1.4860296
Thermal stability and magnetism of Co and Fe ultrathin films on faceted Pd/W{112} surface
J. Appl. Phys. 115, 013905 (2014)
https://doi.org/10.1063/1.4861138
Exchange bias effect in BiFeO3-NiO nanocomposite
Kaushik Chakrabarti; Babusona Sarkar; Vishal Dev Ashok; Kajari Das; Sheli Sinha Chaudhuri; Amitava Mitra; S. K. De
J. Appl. Phys. 115, 013906 (2014)
https://doi.org/10.1063/1.4861140
Low energy C+ ion embedment induced structural disorder in L1 FePt
J. Appl. Phys. 115, 013907 (2014)
https://doi.org/10.1063/1.4860295
Propagating and reflecting of spin wave in permalloy nanostrip with 360° domain wall
J. Appl. Phys. 115, 013908 (2014)
https://doi.org/10.1063/1.4861154
Magneto-elastic and magnetic domain properties of Fe81Ga19/Si(100) films
J. Appl. Phys. 115, 013909 (2014)
https://doi.org/10.1063/1.4861160
Dielectrics and Ferroelectricity
Dielectric strength of voidless BaTiO3 films with nano-scale grains fabricated by aerosol deposition
J. Appl. Phys. 115, 014101 (2014)
https://doi.org/10.1063/1.4851675
Ferroelectric photovoltaic properties of Ce and Mn codoped BiFeO3 thin film
J. Appl. Phys. 115, 014102 (2014)
https://doi.org/10.1063/1.4859575
Degradation characteristics of metal/Al2O3/n-InGaAs capacitors
J. Appl. Phys. 115, 014106 (2014)
https://doi.org/10.1063/1.4861033
Nanoscale Science and Design
Electric field induced modification of magnetic properties in Co2Si2 multilayers
J. Appl. Phys. 115, 014301 (2014)
https://doi.org/10.1063/1.4859596
Photocapacitance study of type-II GaSb/GaAs quantum ring solar cells
J. Appl. Phys. 115, 014302 (2014)
https://doi.org/10.1063/1.4861129
Structural characterization of ion-vapor deposited hydrogenated amorphous carbon coatings by solid state 13C nuclear magnetic resonance
Jiao Xu (佼 许); Sadayuki Watanabe (禎之 渡邊); Hideo Hayashi (英男 林); Masahiro Kawaguchi (雅弘 川口); Takahisa Kato (孝久 加藤)
J. Appl. Phys. 115, 014303 (2014)
https://doi.org/10.1063/1.4858407
Achieving an H-induced transparent state in 200 nm thick Mg–Ti film by amorphization
Fang Fang; Qiyang Zhao; Wangyang Wu; Jiameng Qiu; Yun Song; Xiaoli Cui; Dalin Sun; Liuzhang Ouyang; Min Zhu
J. Appl. Phys. 115, 014304 (2014)
https://doi.org/10.1063/1.4858429
Optical properties of titanium dioxide nanotube arrays
J. Appl. Phys. 115, 014306 (2014)
https://doi.org/10.1063/1.4847575
Device Physics
Simulations of table-top watt-class 1 THz radiation sources with two-section periodic structure
J. Appl. Phys. 115, 014503 (2014)
https://doi.org/10.1063/1.4861141
Interdisciplinary and General Physics
The importance of anharmonicity in thermal transport across solid-solid interfaces
J. Appl. Phys. 115, 014901 (2014)
https://doi.org/10.1063/1.4859555
ERRATA
A step-by-step guide to perform x-ray photoelectron spectroscopy
Grzegorz Greczynski, Lars Hultman
GaN-based power devices: Physics, reliability, and perspectives
Matteo Meneghini, Carlo De Santi, et al.