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15 May 2012
ISSN 0021-8979
EISSN 1089-7550
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SPECIAL TOPIC: SELECTED PAPERS FROM THE 22ND INTERNATIONAL SYMPOSIUM ON INTEGRATED FUNCTIONALITIES, SAN JUAN, PUERTO RICO, JUNE 2010
Deposition of stress free c-axis oriented LiNbO3 thin film grown on (002) ZnO coated Si substrate
J. Appl. Phys. 111, 102803 (2012)
https://doi.org/10.1063/1.4714664
Structural and magnetic properties of N doped ZnO thin films
J. Appl. Phys. 111, 102805 (2012)
https://doi.org/10.1063/1.4714686
ZnO nanowire based visible-transparent ultraviolet detectors on polymer substrates
J. Appl. Phys. 111, 102806 (2012)
https://doi.org/10.1063/1.4714698
Threshold resistive and capacitive switching behavior in binary amorphous GeSe
J. Appl. Phys. 111, 102807 (2012)
https://doi.org/10.1063/1.4714705
Materials for phase-change memory with elevated temperature stability
J. Appl. Phys. 111, 102808 (2012)
https://doi.org/10.1063/1.4714711
Dielectric properties and electrical conduction of high-k LaGdO3 ceramics
J. Appl. Phys. 111, 102811 (2012)
https://doi.org/10.1063/1.4714721
Determination of maximum power transfer conditions of bimorph piezoelectric energy harvesters
J. Appl. Phys. 111, 102812 (2012)
https://doi.org/10.1063/1.4714644
Preface
ARTICLES
Lasers, Optics, and Optoelectronics
Inhomogeneous nanostructured honeycomb optical media for enhanced cathodo- and under-x-ray luminescence
N. V. Gaponenko; V. S. Kortov; M. V. Rudenko; V. A. Pustovarov; S. V. Zvonarev; A. I. Slesarev; I. S. Molchan; G. E. Thompson; L. S. Khoroshko; S. Ya. Prislopskii
J. Appl. Phys. 111, 103101 (2012)
https://doi.org/10.1063/1.4717740
Plasmonic dispersion engineering of coupled metal nanoparticle-film systems
J. Appl. Phys. 111, 103102 (2012)
https://doi.org/10.1063/1.4717763
Highly stable charge generation layers using caesium phosphate as n-dopants and inserting interlayers
J. Appl. Phys. 111, 103107 (2012)
https://doi.org/10.1063/1.4720064
Zinc oxide micro-spheres with faceted surfaces produced by laser ablation of zinc targets
J. Appl. Phys. 111, 103108 (2012)
https://doi.org/10.1063/1.4720073
Enhanced entanglement between a movable mirror and a cavity field assisted by two-level atoms
J. Appl. Phys. 111, 103109 (2012)
https://doi.org/10.1063/1.4719075
First-principles analysis of structural and opto-electronic properties of indium tin oxide
J. Appl. Phys. 111, 103110 (2012)
https://doi.org/10.1063/1.4719980
Enhancing performance of polymer-based microlasers by a pedestal geometry
J. Appl. Phys. 111, 103116 (2012)
https://doi.org/10.1063/1.4720474
Structural modifications of zinc phthalocyanine thin films for organic photovoltaic applications
J. Appl. Phys. 111, 103117 (2012)
https://doi.org/10.1063/1.4721409
Adaptive properties of a liquid crystal cell with a microlens-profiled aligning surface
J. Appl. Phys. 111, 103118 (2012)
https://doi.org/10.1063/1.4721645
Optimal design of quarter-wave plate with wideband and wide viewing angle for three-dimensional liquid crystal display
Wan Seok Kang; Byung-June Mun; Gi-Dong Lee; Joun Ho Lee; Byeong Koo Kim; Hyun Chul Choi; Young Jin Lim; Seung Hee Lee
J. Appl. Phys. 111, 103119 (2012)
https://doi.org/10.1063/1.4723819
Effects of lateral current injection in GaN multi-quantum well light-emitting diodes
J. Appl. Phys. 111, 103120 (2012)
https://doi.org/10.1063/1.4720584
Plasmonic absorption enhancement in organic solar cells by nano disks in a buffer layer
J. Appl. Phys. 111, 103121 (2012)
https://doi.org/10.1063/1.4722349
Plasmas and Electrical Discharges
Implementation of moiré-schlieren deflectometry on a small scale fast capillary plasma discharge
J. Appl. Phys. 111, 103301 (2012)
https://doi.org/10.1063/1.4719982
Energy and force prediction for a nanosecond pulsed dielectric barrier discharge actuator
J. Appl. Phys. 111, 103302 (2012)
https://doi.org/10.1063/1.4722202
Structural, Mechanical, Thermodynamic, and Optical Properties of Condensed Matter
A monoclinic-tetragonal ferroelectric phase transition in lead-free (K0.5Na0.5)NbO3-x%LiNbO3 solid solution
J. Appl. Phys. 111, 103503 (2012)
https://doi.org/10.1063/1.4716027
Z-scan study of nonlinear absorption in reduced LiNbO3 crystals
J. Appl. Phys. 111, 103504 (2012)
https://doi.org/10.1063/1.4716470
Spatially localized measurement of thermal conductivity using a hybrid photothermal technique
J. Appl. Phys. 111, 103505 (2012)
https://doi.org/10.1063/1.4716474
Phononic and structural response to strain in wurtzite-gallium nitride nanowires
J. Appl. Phys. 111, 103506 (2012)
https://doi.org/10.1063/1.4716476
Prediction of glass forming ability and glass forming range for electrodeposited binary Co-W alloys
J. Appl. Phys. 111, 103508 (2012)
https://doi.org/10.1063/1.4717723
The evolution of solid density within a thermal explosion. I. Proton radiography of pre-ignition expansion, material motion, and chemical decomposition
L. Smilowitz; B. F. Henson; J. J. Romero; B. W. Asay; A. Saunders; F. E. Merrill; C. L. Morris; K. Kwiatkowski; G. Grim; F. Mariam; C. L. Schwartz; G. Hogan; P. Nedrow; M. M. Murray; T. N. Thompson; C. Espinoza; D. Lewis; J. Bainbridge; W. McNeil; P. Rightley; M. Marr-Lyon
J. Appl. Phys. 111, 103515 (2012)
https://doi.org/10.1063/1.4711071
The evolution of solid density within a thermal explosion II. Dynamic proton radiography of cracking and solid consumption by burning
L. Smilowitz; B. F. Henson; J. J. Romero; B. W. Asay; A. Saunders; F. E. Merrill; C. L. Morris; K. Kwiatkowski; G. Grim; F. Mariam; C. L. Schwartz; G. Hogan; P. Nedrow; M. M. Murray; T. N. Thompson; C. Espinoza; D. Lewis; J. Bainbridge; W. McNeil; P. Rightley; M. Marr-Lyon
J. Appl. Phys. 111, 103516 (2012)
https://doi.org/10.1063/1.4711072
Atomic scale observation of phase separation and formation of silicon clusters in Hf higk- silicates
J. Appl. Phys. 111, 103519 (2012)
https://doi.org/10.1063/1.4718440
Formation of iron nitride thin films with Al and Ti additives
J. Appl. Phys. 111, 103520 (2012)
https://doi.org/10.1063/1.4718579
Dislocation climb in two-dimensional discrete dislocation dynamics
J. Appl. Phys. 111, 103522 (2012)
https://doi.org/10.1063/1.4718432
Glass polarization induced drift in microelectromechanical capacitor
J. Appl. Phys. 111, 103523 (2012)
https://doi.org/10.1063/1.4720378
Phase evolution and room-temperature photoluminescence in amorphous SiC alloy
J. Appl. Phys. 111, 103526 (2012)
https://doi.org/10.1063/1.4721412
Chemical and topological order in shear bands of Cu64Zr36 and Cu36Zr64 glasses
J. Appl. Phys. 111, 103527 (2012)
https://doi.org/10.1063/1.4717748
Nanometer-size anisotropy of injection-molded polymer micro-cantilever arrays
J. Appl. Phys. 111, 103530 (2012)
https://doi.org/10.1063/1.4720942
A high-pressure far- and mid-infrared study of 1,1-diamino-2,2-dinitroethylene
J. Appl. Phys. 111, 103534 (2012)
https://doi.org/10.1063/1.4722350
Thermal expansions of Ln2Zr2O7 (Ln = La, Nd, Sm, and Gd) pyrochlore
J. Appl. Phys. 111, 103535 (2012)
https://doi.org/10.1063/1.4722174
Electronic Structure and Transport
Surface-induced truly half-metallicity in VTe with rocksalt structure from first-principles calculations
J. Appl. Phys. 111, 103703 (2012)
https://doi.org/10.1063/1.4717730
Enhancing hole mobility in III-V semiconductors
J. Appl. Phys. 111, 103706 (2012)
https://doi.org/10.1063/1.4718381
Terahertz emission induced by optical beating in nanometer-length field-effect transistors
P. Nouvel; J. Torres; S. Blin; H. Marinchio; T. Laurent; C. Palermo; L. Varani; P. Shiktorov; E. Starikov; V. Gruzinskis; F. Teppe; Y. Roelens; A. Shchepetov; S. Bollaert
J. Appl. Phys. 111, 103707 (2012)
https://doi.org/10.1063/1.4718445
Density functional theory analysis of dopants in cupric oxide
J. Appl. Phys. 111, 103708 (2012)
https://doi.org/10.1063/1.4719059
Enhanced thermoelectric figure-of-merit ZT for hole-doped Bi2Sr2Co2Oy through Pb substitution
J. Appl. Phys. 111, 103709 (2012)
https://doi.org/10.1063/1.4720075
A numerical study of carrier impact ionization in AlxGa1−xN
J. Appl. Phys. 111, 103711 (2012)
https://doi.org/10.1063/1.4719967
Lattice mismatch and crystallographic tilt induced by high-dose ion-implantation into 4H-SiC
J. Appl. Phys. 111, 103715 (2012)
https://doi.org/10.1063/1.4720435
Spin splitting in bulk wurtzite AlN under biaxial strain
J. Appl. Phys. 111, 103716 (2012)
https://doi.org/10.1063/1.4720469
Fano-type resonance through a time-periodic potential in graphene
J. Appl. Phys. 111, 103717 (2012)
https://doi.org/10.1063/1.4721653
Long range lateral migration of intrinsic point defects in n-type 4H-SiC
J. Appl. Phys. 111, 103719 (2012)
https://doi.org/10.1063/1.4716181
Cathodoluminescence insights into the ionic disorder of photocatalytic anatase films
J. Appl. Phys. 111, 103720 (2012)
https://doi.org/10.1063/1.4720466
Magnetism and Superconductivity
Thermal spin pumping and magnon-phonon-mediated spin-Seebeck effect
K. Uchida; T. Ota; H. Adachi; J. Xiao; T. Nonaka; Y. Kajiwara; G. E. W. Bauer; S. Maekawa; E. Saitoh
J. Appl. Phys. 111, 103903 (2012)
https://doi.org/10.1063/1.4716012
The role of 4f-electron on spin reorientation transition of NdFeO3: A first principle study
J. Appl. Phys. 111, 103905 (2012)
https://doi.org/10.1063/1.4716187
Comparison of bit-patterned media fabricated by methods of direct deposition and ion-milling of cobalt/palladium multilayers
Naganivetha Thiyagarajah; Tianli Huang; Yunjie Chen; Huigao Duan; Debra L. Y. Song; Siang Huei Leong; Joel K. W. Yang; Vivian Ng
J. Appl. Phys. 111, 103906 (2012)
https://doi.org/10.1063/1.4714547
An analytical model of a ferrite-cored inductor used as an eddy current probe
J. Appl. Phys. 111, 103907 (2012)
https://doi.org/10.1063/1.4716189
Magnetization and magnetostriction of Terfenol-D near spin reorientation boundary
J. Appl. Phys. 111, 103908 (2012)
https://doi.org/10.1063/1.4718435
Sol-gel NiFe2O4 nanoparticles: Effect of the silica coating
J. Appl. Phys. 111, 103911 (2012)
https://doi.org/10.1063/1.4720079
Study of generalized magneto-optical ellipsometry measurement reliability
J. Appl. Phys. 111, 103912 (2012)
https://doi.org/10.1063/1.4720471
L1-FePt based exchange coupled composite films with soft [Co/Ni]N multilayers
J. Appl. Phys. 111, 103916 (2012)
https://doi.org/10.1063/1.4718580
Dielectrics and Ferroelectricity
Lattice dynamics and broad-band dielectric properties of the KTaO3 ceramics
Sebastjan Glinšek; Dmitry Nuzhnyy; Jan Petzelt; Barbara Malič; Stanislav Kamba; Viktor Bovtun; Martin Kempa; Volodymyr Skoromets; Petr Kužel; Ivan Gregora; Marija Kosec
J. Appl. Phys. 111, 104101 (2012)
https://doi.org/10.1063/1.4714545
Coexistence of unipolar and bipolar resistive switching in BiFeO3 and Bi0.8Ca0.2FeO3 films
J. Appl. Phys. 111, 104103 (2012)
https://doi.org/10.1063/1.4716867
Observation of strong magnetoelectric effects in Ba0.7Sr0.3TiO3/La0.7Sr0.3MnO3 thin film heterostructures
J. Appl. Phys. 111, 104104 (2012)
https://doi.org/10.1063/1.4717727
Resolved E-symmetry zone-centre phonons in LiTaO3 and LiNbO3
J. Appl. Phys. 111, 104105 (2012)
https://doi.org/10.1063/1.4716001
Electrical properties of (110) epitaxial lead-free ferroelectric Na0.5Bi0.5TiO3 thin films grown by pulsed laser deposition: Macroscopic and nanoscale data
M. Bousquet; J.-R. Duclère; B. Gautier; A. Boulle; A. Wu; S. Députier; D. Fasquelle; F. Rémondière; D. Albertini; C. Champeaux; P. Marchet; M. Guilloux-Viry; P. Vilarinho
J. Appl. Phys. 111, 104106 (2012)
https://doi.org/10.1063/1.4716177
The structural, dielectric, elastic, and piezoelectric properties of KNbO3 from first-principles methods
J. Appl. Phys. 111, 104107 (2012)
https://doi.org/10.1063/1.4712052
Dielectric and piezoelectric activities in (1−x)Pb(Mg1/3Nb2/3)O3−xPbTiO3 single crystals from 5 K to 300 K
J. Appl. Phys. 111, 104108 (2012)
https://doi.org/10.1063/1.4716031
Effect of oxygen vacancy on the dielectric relaxation of BaTiO3 thin films in a quenched state
J. Appl. Phys. 111, 104109 (2012)
https://doi.org/10.1063/1.4717758
Bright upconversion luminescence and increased Tc in CaBi2Ta2O9:Er high temperature piezoelectric ceramics
J. Appl. Phys. 111, 104111 (2012)
https://doi.org/10.1063/1.4720578
Admittance and subthreshold characteristics of atomic-layer-deposition Al2O3 on In0.53Ga0.47As in surface and buried channel flatband metal-oxide-semiconductor field effect transistors
G. W. Paterson; S. J. Bentley; M. C. Holland; I. G. Thayne; J. Ahn; R. D. Long; P. C. McIntyre; A. R. Long
J. Appl. Phys. 111, 104112 (2012)
https://doi.org/10.1063/1.4720940
Polarization of poly(vinylidene fluoride) and poly(vinylidene fluoride-trifluoroethylene) thin films revealed by emission spectroscopy with computational simulation during phase transition
Vladimir S. Bystrov; Ekaterina V. Paramonova; Yuri Dekhtyar; Robert C. Pullar; Aleksey Katashev; Natalie Polyaka; Anna V. Bystrova; Alla V. Sapronova; Vladimir M. Fridkin; Herbert Kliem; Andrei L. Kholkin
J. Appl. Phys. 111, 104113 (2012)
https://doi.org/10.1063/1.4721373
Study on α-β quartz phase transition and its effect on dielectric properties
J. Appl. Phys. 111, 104116 (2012)
https://doi.org/10.1063/1.4722217
Coexistence of ferroelectric vortex domains and charged domain walls in epitaxial BiFeO3 film on (110)O GdScO3 substrate
Yajun Qi; Zuhuang Chen; Chuanwei Huang; Lihua Wang; Xiaodong Han; Junling Wang; Ping Yang; Thirumany Sritharan; Lang Chen
J. Appl. Phys. 111, 104117 (2012)
https://doi.org/10.1063/1.4722253
Nanoscale Science and Design
Observation of band alignment transition in InAs/GaAsSb quantum dots by photoluminescence
J. Appl. Phys. 111, 104302 (2012)
https://doi.org/10.1063/1.4717766
Unstable kinetic roughening during the island coalescence stage of sputtered tantalum films
J. Appl. Phys. 111, 104303 (2012)
https://doi.org/10.1063/1.4707955
Optical transitions of InAs/GaAs quantum dot under annealing process
J. Appl. Phys. 111, 104304 (2012)
https://doi.org/10.1063/1.4717952
Growth of metal and metal oxide nanowires driven by the stress-induced migration
J. Appl. Phys. 111, 104305 (2012)
https://doi.org/10.1063/1.4718436
Electrical and photoresponse properties of Co3O4 nanowires
Binni Varghese; Bablu Mukherjee; K. R. G. Karthik; K. B. Jinesh; S. G. Mhaisalkar; Eng Soon Tok; Chorng Haur Sow
J. Appl. Phys. 111, 104306 (2012)
https://doi.org/10.1063/1.4712497
Observation and modeling of polycrystalline grain formation in Ge2Sb2Te5
Geoffrey W. Burr; Pierre Tchoulfian; Teya Topuria; Clemens Nyffeler; Kumar Virwani; Alvaro Padilla; Robert M. Shelby; Mona Eskandari; Bryan Jackson; Bong-Sub Lee
J. Appl. Phys. 111, 104308 (2012)
https://doi.org/10.1063/1.4718574
Shape evolution in glancing angle deposition of arranged Germanium nanocolumns
J. Appl. Phys. 111, 104309 (2012)
https://doi.org/10.1063/1.4719978
Efros-Shklovskii variable range hopping transport in nanocluster metallic films
J. Appl. Phys. 111, 104318 (2012)
https://doi.org/10.1063/1.4716006
Nano scale phase separation in Au-Ge system on ultra clean Si(100) surfaces
J. Appl. Phys. 111, 104319 (2012)
https://doi.org/10.1063/1.4721666
Enhanced magneto-thermoelectric power factor of a 70 nm Ni-nanowire
J. Appl. Phys. 111, 104320 (2012)
https://doi.org/10.1063/1.4721896
Grain boundary effects on defect production and mechanical properties of irradiated nanocrystalline SiC
J. Appl. Phys. 111, 104322 (2012)
https://doi.org/10.1063/1.4723648
Structural and electrical studies of ultrathin layers with Si0.7Ge0.3 nanocrystals confined in a SiGe/SiO2 superlattice
E. M. F. Vieira; J. Martín-Sánchez; A. G. Rolo; A. Parisini; M. Buljan; I. Capan; E. Alves; N. P. Barradas; O. Conde; S. Bernstorff; A. Chahboun; S. Levichev; M. J. M. Gomes
J. Appl. Phys. 111, 104323 (2012)
https://doi.org/10.1063/1.4722278
Device Physics
High-output-power densities from molecular beam epitaxy grown n- and p-type PbTeSe-based thermoelectrics via improved contact metallization
W. G. Goodhue; R. E. Reeder; C. J. Vineis; S. D. Calawa; H. M. Dauplaise; S. Vangala; M. P. Walsh; T. C. Harman
J. Appl. Phys. 111, 104501 (2012)
https://doi.org/10.1063/1.4712425
Phase transition behavior in microcantilevers coated with M1-phase VO2 and M2-phase VO2:Cr thin films
J. Appl. Phys. 111, 104502 (2012)
https://doi.org/10.1063/1.4716191
Localized mid-gap-states limited reverse current of diamond Schottky diodes
J. Appl. Phys. 111, 104503 (2012)
https://doi.org/10.1063/1.4712437
High mobility In0.53Ga0.47As quantum-well metal oxide semiconductor field effect transistor structures
J. Appl. Phys. 111, 104511 (2012)
https://doi.org/10.1063/1.4721328