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APPLIED PHYSICS REVIEWS—FOCUSED REVIEW

Schottky barriers in carbon nanotube-metal contacts

Johannes Svensson; Eleanor E. B. Campbell

J. Appl. Phys. 110, 111101 (2011) https://doi.org/10.1063/1.3664139

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ARTICLES

Lasers, Optics, and Optoelectronics

Pressure effect on the Fermi resonance doublets of ν₁ ∼ ν₁₂ and ν₁+ν₆ ∼ ν₈ in pyridine

X. L. Jiang; M. Zhou; Z. W. Li; C. L. Sun; S. Q. Gao

J. Appl. Phys. 110, 113101 (2011) https://doi.org/10.1063/1.3662190

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Optical properties and thermal response of copper films induced by ultrashort-pulsed lasers

Yunpeng Ren; J. K. Chen; Yuwen Zhang

J. Appl. Phys. 110, 113102 (2011) https://doi.org/10.1063/1.3662897

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Study on characteristic parameters influencing laser-induced damage threshold of KH₂PO₄ crystal surface machined by single point diamond turning

Mingjun Chen; Mingquan Li; Jian Cheng; Wei Jiang; Jian Wang; Qiao Xu

J. Appl. Phys. 110, 113103 (2011) https://doi.org/10.1063/1.3664692

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Influence of temperature on dynamics of birefringence switching in photochromic nematic phase

Jaroslaw Mysliwiec; Maciej Czajkowski; Stanislaw Bartkiewicz; Krystian Zygadlo; Zbigniew Galewski; Bouchta Sahraoui

J. Appl. Phys. 110, 113104 (2011) https://doi.org/10.1063/1.3665123

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Absorption enhancement analysis of crystalline Si thin film solar cells based on broadband antireflection nanocone grating

R. Y. Zhang (张瑞英); B. Shao (邵彪); J. R. Dong (董建荣); J. C. Zhang (张金仓); H. Yang (杨辉)

J. Appl. Phys. 110, 113105 (2011) https://doi.org/10.1063/1.3662915

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Bis-EH-PFDTBT:PCBM solar cells: A compositional, thickness, and light-dependent study

Anna Calabrese; Giuliana Schimperna; Riccardo Po; Teketel Yohannes; Siraye E. Debebe; Francesca Tinti; Nadia Camaioni

J. Appl. Phys. 110, 113106 (2011) https://doi.org/10.1063/1.3665126

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Near-infrared down-conversion in rare-earth-doped chloro-sulfide glass GeS₂–Ga₂S₃–CsCl: Er, Yb

Bo Fan; Céline Point; Jean-Luc Adam; Xianghua Zhang; Xianping Fan; Hongli Ma

J. Appl. Phys. 110, 113107 (2011) https://doi.org/10.1063/1.3665638

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Hot carriers relaxation in highly excited polar semiconductors: Hot phonons versus phonon–plasmon coupling

Eric Tea; Hani Hamzeh; Frédéric Aniel

J. Appl. Phys. 110, 113108 (2011) https://doi.org/10.1063/1.3665218

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Compact coupling of light from conventional photonic wire to slow light waveguides

Kadir Üstün; Hamza Kurt

J. Appl. Phys. 110, 113109 (2011) https://doi.org/10.1063/1.3665878

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Improvement in spontaneous emission rates for InGaN quantum wells on ternary InGaN substrate for light-emitting diodes

Jing Zhang; Nelson Tansu

J. Appl. Phys. 110, 113110 (2011) https://doi.org/10.1063/1.3668117

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Thickness effect on laser-induced-damage threshold of indium-tin oxide films at 1064 nm

Haifeng Wang; Zhimeng Huang; Dayong Zhang; Fei Luo; Lixian Huang; Yanglong Li; Yongquan Luo; Weiping Wang; Xiangjie Zhao

J. Appl. Phys. 110, 113111 (2011) https://doi.org/10.1063/1.3665715

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Time-resolved femtosecond optical characterization of multi-photon absorption in high-pressure-grown Al_0.86Ga_0.14N single crystals

Jie Zhang; Andrey Belousov; Janusz Karpiński; Bertram Batlogg; Gary Wicks; Roman Sobolewski

J. Appl. Phys. 110, 113112 (2011) https://doi.org/10.1063/1.3665645

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Downconversion from visible to near infrared through multi-wavelength excitation in Er³⁺/Yb³⁺ co-doped NaYF₄ nanocrystals

Sai Xu; Wen Xu; Biao Dong; Xue Bai; Hongwei Song

J. Appl. Phys. 110, 113113 (2011) https://doi.org/10.1063/1.3666068

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Polariton enhanced infrared reflection of epitaxial graphene

B. K. Daas; K. M. Daniels; T. S. Sudarshan; M. V. S. Chandrashekhar

J. Appl. Phys. 110, 113114 (2011) https://doi.org/10.1063/1.3666069

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Plasmas and Electrical Discharges

Forcing mechanisms of dielectric barrier discharge plasma actuators at carrier frequency of 625 Hz

M. Kotsonis; S. Ghaemi

J. Appl. Phys. 110, 113301 (2011) https://doi.org/10.1063/1.3664695

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Analysis of pulsed high-density HBr and Cl₂ plasmas: Impact of the pulsing parameters on the radical densities

P. Bodart; M. Brihoum; G. Cunge; O. Joubert; N. Sadeghi

J. Appl. Phys. 110, 113302 (2011) https://doi.org/10.1063/1.3663443

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Langmuir probe diagnostics of electron energy distributions with optical emission spectroscopy in capacitively coupled rf discharge in nitrogen

E. Abdel-Fattah; M. Bazavan; H. Sugai

J. Appl. Phys. 110, 113303 (2011) https://doi.org/10.1063/1.3664858

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Electron density measurements in a pulse-repetitive microwave discharge in air

M. Nikolić; S. Popović; L. Vušković; G. C. Herring; R. J. Exton

J. Appl. Phys. 110, 113304 (2011) https://doi.org/10.1063/1.3665195

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Effects of radiofrequency on dust particle dynamics in a plasma reactor

C. Horn; M. Davoudabadi; B. Shotorban

J. Appl. Phys. 110, 113305 (2011) https://doi.org/10.1063/1.3664842

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Physics and modelling of microwave streamers at atmospheric pressure

Bhaskar Chaudhury; Jean-Pierre Boeuf; Guo-Qiang Zhu; Olivier Pascal

J. Appl. Phys. 110, 113306 (2011) https://doi.org/10.1063/1.3665202

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Structural, Mechanical, Thermodynamic, and Optical Properties of Condensed Matter

Strain-compensation measurement and simulation of InGaAs/GaAsP multiple quantum wells by metal organic vapor phase epitaxy using wafer-curvature

ShaoJun Ma; Hassanet Sodabanlu; Kentaroh Watanabe; Masakazu Sugiyama; Yoshiaki Nakano

J. Appl. Phys. 110, 113501 (2011) https://doi.org/10.1063/1.3663309

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X-ray reciprocal space mapping of dislocation-mediated strain relaxation during InGaAs/GaAs(001) epitaxial growth

Takuo Sasaki; Hidetoshi Suzuki; Masamitu Takahasi; Yoshio Ohshita; Itaru Kamiya; Masafumi Yamaguchi

J. Appl. Phys. 110, 113502 (2011) https://doi.org/10.1063/1.3664832

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Quantum cutting mechanism in Tb³⁺-Yb³⁺ co-doped oxyfluoride glass

Qianqian Duan; Feng Qin; Dan Wang; Wei Xu; Jianmin Cheng; Zhiguo Zhang; Wenwu Cao

J. Appl. Phys. 110, 113503 (2011) https://doi.org/10.1063/1.3662916

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Raman spectrometry study of phase stability and phonon anharmonicity of Al₃BC₃ at elevated temperatures and high pressures

Huimin Xiang; Fangzhi Li; Jingjing Li; Jiemin Wang; Xiaohui Wang; Jingyang Wang; Yanchun Zhou

J. Appl. Phys. 110, 113504 (2011) https://doi.org/10.1063/1.3665197

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A unified approach for extracting strength information from nonsimple compression waves. Part I: Thermodynamics and numerical implementation

Bryan W. Reed; James S. Stolken; Roger W. Minich; Mukul Kumar

J. Appl. Phys. 110, 113505 (2011) https://doi.org/10.1063/1.3653821

Abstract

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A unified approach for extracting strength information from nonsimple compression waves. Part II. Experiment and comparison with simulation

Bryan W. Reed; J. Reed Patterson; Damian C. Swift; James S. Stolken; Roger W. Minich; Mukul Kumar

J. Appl. Phys. 110, 113506 (2011) https://doi.org/10.1063/1.3662173

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Size effects on the fatigue behavior of bulk metallic glasses

G. Y. Wang; P. K. Liaw; Y. Yokoyama; A. Inoue

J. Appl. Phys. 110, 113507 (2011) https://doi.org/10.1063/1.3664846

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Optical properties of KCl:Sn²⁺ phosphors synthesized from aqueous KCl/SnCl₂ solutions

Jun-ichi Nara; Sadao Adachi

J. Appl. Phys. 110, 113508 (2011) https://doi.org/10.1063/1.3664916

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Thermal diffusion of nitrogen into ZnO film deposited on InN/sapphire substrate by metal organic chemical vapor deposition

K. Shi; P. F. Zhang; H. Y. Wei; C. M. Jiao; P. Jin; X. L. Liu; S. Y. Yang; Q. S. Zhu; Z. G. Wang

J. Appl. Phys. 110, 113509 (2011) https://doi.org/10.1063/1.3665203

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On the accuracy of classical and long wavelength approximations for phonon transport in graphene

Dhruv Singh; Jayathi Y. Murthy; Timothy S. Fisher

J. Appl. Phys. 110, 113510 (2011) https://doi.org/10.1063/1.3665226

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One-dimensional phonon effects in direct molecular dynamics method for thermal conductivity determination

L. Hu; W. J. Evans; P. Keblinski

J. Appl. Phys. 110, 113511 (2011) https://doi.org/10.1063/1.3660234

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The effect of crystallite size and stress condition on the equation of state of nanocrystalline MgO

H. Marquardt; S. Speziale; K. Marquardt; H. J. Reichmann; Z. Konôpková; W. Morgenroth; H.-P. Liermann

J. Appl. Phys. 110, 113512 (2011) https://doi.org/10.1063/1.3662491

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Photoacoustic determination of the speed of sound in single crystal cyclotrimethylene trinitramine at acoustic frequencies from 0.5 to 15 GHz

Jeremy A. Johnson; Kara J. Manke; David G. Veysset; A. A. Maznev; Kyle J. Ramos; Daniel E. Hooks; Keith A. Nelson

J. Appl. Phys. 110, 113513 (2011) https://doi.org/10.1063/1.3667291

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Temperature-controlled epitaxy of In_xGa_1-_xN alloys and their band gap bowing

S. T. Liu; X. Q. Wang; G. Chen; Y. W. Zhang; L. Feng; C. C. Huang; F. J. Xu; N. Tang; L. W. Sang; M. Sumiya; B. Shen

J. Appl. Phys. 110, 113514 (2011) https://doi.org/10.1063/1.3668111

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Role of oxygen on microstructure and thermoelectric properties of silicon nanocomposites

G. Schierning; R. Theissmann; N. Stein; N. Petermann; A. Becker; M. Engenhorst; V. Kessler; M. Geller; A. Beckel; H. Wiggers; R. Schmechel

J. Appl. Phys. 110, 113515 (2011) https://doi.org/10.1063/1.3658021

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Sublattice-specific ordering of ZnO layers during the heteroepitaxial growth at different temperatures

A. Redondo-Cubero; M. Vinnichenko; M. Krause; A. Mücklich; E. Muñoz; A. Kolitsch; R. Gago

J. Appl. Phys. 110, 113516 (2011) https://doi.org/10.1063/1.3665204

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The dynamical process of the phase transition from $V O_{2}$ (M) to $V O_{2}$ (R)

B. Y. Qu; H. Y. He; B. C. Pan

J. Appl. Phys. 110, 113517 (2011) https://doi.org/10.1063/1.3665640

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Direct and indirect excitation of Nd³⁺ ions sensitized by Si nanocrystals embedded in a SiO₂ thin film

E. Steveler; H. Rinnert; M. Vergnat

J. Appl. Phys. 110, 113518 (2011) https://doi.org/10.1063/1.3667286

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Dynamics of solidification in Al thin films measured using a nanocalorimeter

P. Swaminathan; D. A. LaVan; T. P. Weihs

J. Appl. Phys. 110, 113519 (2011) https://doi.org/10.1063/1.3668128

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Large bandgaps of two-dimensional phononic crystals with cross-like holes

Yan-Feng Wang; Yue-Sheng Wang; Xiao-Xing Su

J. Appl. Phys. 110, 113520 (2011) https://doi.org/10.1063/1.3665205

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Post-growth annealing induced change of conductivity in As-doped ZnO grown by radio frequency magnetron sputtering

C. K. To; B. Yang; S. C. Su; C. C. Ling; C. D. Beling; S. Fung

J. Appl. Phys. 110, 113521 (2011) https://doi.org/10.1063/1.3665713

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Ultraviolet-vacuum ultraviolet photoluminescence and x ray radioluminescence of Ce³⁺-doped Ba₃MgSi₂O₈

Xuemei Ding; Hongbin Liang; Dejian Hou; Qiang Su; Pieter Dorenbos; Shuaishuai Sun; Ye Tao

J. Appl. Phys. 110, 113522 (2011) https://doi.org/10.1063/1.3668103

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Pressure distribution in a quasi-hydrostatic pressure medium: A finite element analysis

Jacques Tempere; Isaac F. Silvera

J. Appl. Phys. 110, 113523 (2011) https://doi.org/10.1063/1.3665194

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The thermally-induced reaction of thin Ni films with Si: Effect of the substrate orientation

S. Gaudet; P. Desjardins; C. Lavoie

J. Appl. Phys. 110, 113524 (2011) https://doi.org/10.1063/1.3662110

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Sound absorption characteristics of aluminum foam with spherical cells

Yunjie Li; Xinfu Wang; Xingfu Wang; Yuelu Ren; Fusheng Han; Cuie Wen

J. Appl. Phys. 110, 113525 (2011) https://doi.org/10.1063/1.3665216

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Emission spectroscopy of divalent-cation-doped GaN photocatalysts

Takeshi Hirai; Takashi Harada; Shigeru Ikeda; Michio Matsumura; Nobuo Saito; Hiroshi Nishiyama; Yasunobu Inoue; Yoshiyuki Harada; Nobuhito Ohno; Kazuhiko Maeda; Jun Kubota; Kazunari Domen

J. Appl. Phys. 110, 113526 (2011) https://doi.org/10.1063/1.3665225

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Structural properties of fluorozirconate-based glass ceramics doped with multivalent europium

C. Paßlick; O. Müller; D. Lützenkirchen-Hecht; R. Frahm; J. A. Johnson; S. Schweizer

J. Appl. Phys. 110, 113527 (2011) https://doi.org/10.1063/1.3662148

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Extended x-ray absorption fine structure study of porous GaSb formed by ion implantation

P. Kluth; S. M. Kluth; B. Johannessen; C. J. Glover; G. J. Foran; M. C. Ridgway

J. Appl. Phys. 110, 113528 (2011) https://doi.org/10.1063/1.3665643

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Tunable superlattice in-plane thermal conductivity based on asperity sharpness at interfaces: Beyond Ziman’s model of specularity

Ali Rajabpour; S. M. Vaez Allaei; Yann Chalopin; Farshad Kowsary; Sebastian Volz

J. Appl. Phys. 110, 113529 (2011) https://doi.org/10.1063/1.3665408

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Electronic Structure and Transport

Direct-indirect crossover in Ga_xIn_1-xP alloys

K. Alberi; B. Fluegel; M. A. Steiner; R. France; W. Olavarria; A. Mascarenhas

J. Appl. Phys. 110, 113701 (2011) https://doi.org/10.1063/1.3663439

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Electronic and transport properties of achiral carbon nanotubes with di-vacancy pairs

Fenglan Hu; Jian Zhou

J. Appl. Phys. 110, 113702 (2011) https://doi.org/10.1063/1.3663440

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Base charge accumulation and push-out effects on nonlinearity of Type-I InP/InGaAs/InP and Type-I/II AlInP/GaAsSb/InP double heterojunction bipolar transistors

K. Y. (Donald) Cheng; H. Xu; M. E. Stuenkel; E. W. Iverson; C. C. Liao; K. W. Yang; M. Feng; K. Y. (Norman) Cheng

J. Appl. Phys. 110, 113703 (2011) https://doi.org/10.1063/1.3662152

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Hot phonon effect in Dyakonov-Perel spin relaxation: Ehrenreich’s variational approach

M. Idrish Miah

J. Appl. Phys. 110, 113704 (2011) https://doi.org/10.1063/1.3664838

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Hole spectra and conductance for quantum wire systems under Rashba spin-orbit interaction

R. Cuan; L. Diago-Cisneros

J. Appl. Phys. 110, 113705 (2011) https://doi.org/10.1063/1.3660213

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Structural and thermoelectric properties of BaRCo₄O₇ (R = Dy, Ho, Er, Tm, Yb, and Lu)

W. Wong-Ng; W. Xie; Y. Yan; G. Liu; J. Kaduk; E. Thomas; T. Tritt

J. Appl. Phys. 110, 113706 (2011) https://doi.org/10.1063/1.3663526

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Spectroscopic studies of iron and chromium in germanium

Y. Gurimskaya; D. Mathiot; A. Sellai; P. Kruszewski; L. Dobaczewski; A. Nylandsted Larsen; A. Mesli

J. Appl. Phys. 110, 113707 (2011) https://doi.org/10.1063/1.3664761

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Relating hysteresis and electrochemistry in graphene field effect transistors

Alina Veligura; Paul J. Zomer; Ivan J. Vera-Marun; Csaba Józsa; Pavlo I. Gordiichuk; Bart J. van Wees

J. Appl. Phys. 110, 113708 (2011) https://doi.org/10.1063/1.3665196

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Interlayer molecular diffusion and thermodynamic equilibrium in organic heterostructures on a metal electrode

P. Amsalem; A. Wilke; J. Frisch; J. Niederhausen; A. Vollmer; R. Rieger; K. Müllen; J. P. Rabe; N. Koch

J. Appl. Phys. 110, 113709 (2011) https://doi.org/10.1063/1.3662878

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Electron transport through the p-n junction of zigzag graphene nanoribbon with external transverse electric fields

Wen-Huan Zhu; Guo-Hui Ding

J. Appl. Phys. 110, 113710 (2011) https://doi.org/10.1063/1.3667175

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Surface photo-voltage effect on Cr/GaAs(100) studied by photoemission spectroscopy with the combination of synchrotron radiation and laser

Kazutoshi Takahashi; Sinji Tokudomi; Yusuke Nagata; Junpei Azuma; Masao Kamada

J. Appl. Phys. 110, 113711 (2011) https://doi.org/10.1063/1.3665214

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Dopant concentration imaging in crystalline silicon wafers by band-to-band photoluminescence

S. Y. Lim; S. P. Phang; T. Trupke; A. Cuevas; D. Macdonald

J. Appl. Phys. 110, 113712 (2011) https://doi.org/10.1063/1.3664859

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Electron mobility, Hall scattering factor, and sheet conductivity in AlGaN/AlN/GaN heterostructures

A. Asgari; S. Babanejad; L. Faraone

J. Appl. Phys. 110, 113713 (2011) https://doi.org/10.1063/1.3665124

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Effect of K doping on CuPc: C₆₀ heterojunctions

Chiu-Ping Cheng (鄭秋平); Wen-Yen Chen (陳文彥); Ching-Hsuan Wei (魏竟軒); Tun-Wen Pi (皮敦文)

J. Appl. Phys. 110, 113714 (2011) https://doi.org/10.1063/1.3665711

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Effects of matching conditions in effective-mass theory: Quantum wells, transmission, and metal-induced gap states

Walter A. Harrison

J. Appl. Phys. 110, 113715 (2011) https://doi.org/10.1063/1.3665716

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Transport and noise spectroscopy of MWCNT/HDPE composites with different nanotube concentrations

C. Barone; S. Pagano; H. C. Neitzert

J. Appl. Phys. 110, 113716 (2011) https://doi.org/10.1063/1.3666052

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Josephson Hall current in a noncentrosymmetric superconductor/ferromagnet/superconductor junction

Jun Wang; Lei Hao; Y. H. Yang; K. S. Chan

J. Appl. Phys. 110, 113717 (2011) https://doi.org/10.1063/1.3666055

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Non-universal behavior well above the percolation threshold and thermal properties of core-shell-magnetite-polymer fibers

Sesha Vempati; Jagadeesh Babu Veluru; Raghuraman G. Karunakaran; Dhamodharan Raghavachari; Natarajan T. Srinivasan

J. Appl. Phys. 110, 113718 (2011) https://doi.org/10.1063/1.3668890

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Supplementary Material

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Resistive transition, anomalous magnetocapacitance, and ferroelectric phenomena observed in charge ordered canted antiferromagnetic La_0.5Ba_0.5FeO₃ perovskite

Md G. Masud; Arijit Ghosh; B. K. Chaudhuri; K. Hsiao; H. D. Yang

J. Appl. Phys. 110, 113719 (2011) https://doi.org/10.1063/1.3665648

Abstract

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Spin dephasing in silicon germanium (Si_1−xGe_x) nanowires

Ashish Kumar; Md. Waseem Akram; Satya Gopal Dinda; Bahniman Ghosh

J. Appl. Phys. 110, 113720 (2011) https://doi.org/10.1063/1.3666022

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Anomalous transport and thermal properties of NiTi and with Cu and Fe-doped shape memory alloys near the martensitic transition

B. D. Ingale; W. C. Wei; P. C. Chang; Y. K. Kuo; S. K. Wu

J. Appl. Phys. 110, 113721 (2011) https://doi.org/10.1063/1.3666029

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Fe-spin reorientation in PrFeAsO: Evidences from resistivity and specific heat studies

D. Bhoi; P. Mandal; P. Choudhury; S. Pandya; V. Ganesan

J. Appl. Phys. 110, 113722 (2011) https://doi.org/10.1063/1.3666058

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Colossal enhancement in thermoelectric efficiency of weakly coupled double quantum dot system

Gagan Rajput; K. C. Sharma

J. Appl. Phys. 110, 113723 (2011) https://doi.org/10.1063/1.3662946

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Electronic structure of NiO layers grown on Al₂O₃ and SiO₂ using metallo-organic chemical vapour deposition

H. Y. Chou; M. Badylevich; V. V. Afanas’ev; M. Houssa; A. Stesmans; J. Meersschaut; L. Goux; J. A. Kittl; D. J. Wouters

J. Appl. Phys. 110, 113724 (2011) https://doi.org/10.1063/1.3658802

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Magnetism and Superconductivity

Spacer layer thickness dependence of exchange coupling in Co-enriched Co-Mn-Si/Cr/Co-Mn-Si epitaxial trilayers

S. Bosu; Y. Sakuraba; K. Saito; H. Wang; K. Takanashi

J. Appl. Phys. 110, 113901 (2011) https://doi.org/10.1063/1.3663362

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Loss of magnetization induced by doping in CeO₂ films

V. Fernandes; P. Schio; A. J. A. de Oliveira; W. H. Schreiner; J. Varalda; D. H. Mosca

J. Appl. Phys. 110, 113902 (2011) https://doi.org/10.1063/1.3664764

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Normal modes of coupled vortex gyration in two spatially separated magnetic nanodisks

Ki-Suk Lee; Hyunsung Jung; Dong-Soo Han; Sang-Koog Kim

J. Appl. Phys. 110, 113903 (2011) https://doi.org/10.1063/1.3662923

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Evaluation of the specific boundary resistance of superconducting/weakly ferromagnetic hybrids by critical temperature measurements

D. Mancusi; E. A. Ilyina; V. N. Kushnir; S. L. Prischepa; C. Cirillo; C. Attanasio

J. Appl. Phys. 110, 113904 (2011) https://doi.org/10.1063/1.3664748

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Increased grain boundary critical current density $J_{c}^{gb}$ by Pr-doping in pulsed laser–deposited Y_1−xPr_xBCO thin films

M. Irjala; H. Huhtinen; V. P. S. Awana; M. Falter; P. Paturi

J. Appl. Phys. 110, 113905 (2011) https://doi.org/10.1063/1.3664773

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Measurements and calculations of transport AC loss in second generation high temperature superconducting pancake coils

Weijia Yuan; T. A. Coombs; Jae-Ho Kim; Chul Han Kim; Jozef Kvitkovic; Sastry Pamidi

J. Appl. Phys. 110, 113906 (2011) https://doi.org/10.1063/1.3662174

Abstract

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Magnetic frustration and short-range ordering in cubic defect spinel MgMnO₃

M. S. Seehra; V. Singh; S. Thota

J. Appl. Phys. 110, 113907 (2011) https://doi.org/10.1063/1.3664910

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Spin-glass-like behavior and related properties of aluminum-based Al−Y−RE−Ni (RE=Gd, Dy) amorphous alloys

A. Chrobak; A. Ślebarski; G. Haneczok; B. Kotur

J. Appl. Phys. 110, 113908 (2011) https://doi.org/10.1063/1.3665035

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Magnetic properties and short-range structure analysis of granular cobalt silicon nitride multilayers

F. Jiménez-Villacorta; A. Espinosa; E. Céspedes; C. Prieto

J. Appl. Phys. 110, 113909 (2011) https://doi.org/10.1063/1.3665877

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A comparison of the growth modes of (100)- and (110)-oriented CrO₂ films through the calculation of surface and interface energies

K. B. Chetry; H. Sims; W. H. Butler; A. Gupta

J. Appl. Phys. 110, 113910 (2011) https://doi.org/10.1063/1.3664768

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Thermal exchange bias field drifts after 10 keV He ion bombardment: Storage temperature dependence and initial number of coupling sites

Christoph Schmidt; Tanja Weis; Dieter Engel; Arno Ehresmann

J. Appl. Phys. 110, 113911 (2011) https://doi.org/10.1063/1.3665198

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Size effects on gamma radiation response of magnetic properties of barium hexaferrite powders

John McCloy; Ravi Kukkadapu; Jarrod Crum; Brad Johnson; Tim Droubay

J. Appl. Phys. 110, 113912 (2011) https://doi.org/10.1063/1.3665769

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Enhanced low-field magnetoresistance in La_0.67Sr_0.33MnO₃:MgO composite films

M. Staruch; D. Hires; A. Chen; Z. Bi; H. Wang; M. Jain

J. Appl. Phys. 110, 113913 (2011) https://doi.org/10.1063/1.3665881

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Phase diagram and spin-glass phenomena in electron-doped La_1−xHf_xMnO₃ (0.05 ≤ x ≤ 0.3) manganite oxides

E. J. Guo; L. Wang; Z. P. Wu; L. Wang; H. B. Lu; K. J. Jin; J. Gao

J. Appl. Phys. 110, 113914 (2011) https://doi.org/10.1063/1.3666056

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Magnetocaloric effect and its implementation in critical behavior study of Mn₄FeGe₃₋_xSi_x intermetallic compounds

Madhumita Halder; S. M. Yusuf; A. K. Nigam

J. Appl. Phys. 110, 113915 (2011) https://doi.org/10.1063/1.3669390

Abstract

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Weak localization and antilocalization of hole carriers in degenerate p-Ge₁₋_xMn_xTe

S. T. Lim; L. Hui; J. F. Bi; K. L. Teo

J. Appl. Phys. 110, 113916 (2011) https://doi.org/10.1063/1.3669492

Abstract

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Organization of flux line system and voltage oscillations in superconducting MgB₂

A. Kiliç; M. Olutaş; K. Kiliç; A. Altinkok

J. Appl. Phys. 110, 113917 (2011) https://doi.org/10.1063/1.3665641

Abstract

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Positive magnetoresistance in granular magnetic films with perpendicular anisotropy

V. M. Kalita; A. A. Timopheev; A. F. Lozenko; S. M. Ryabchenko; A. V. Los; O. V. Stognei; A. V. Sitnikov

J. Appl. Phys. 110, 113918 (2011) https://doi.org/10.1063/1.3665685

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Convective solution transport — An improved technique for the growth of big crystals of the superconducting α-FeSe using KCl as solvent

S. M. Rao; B. H. Mok; M. C. Ling; C. T. Ke; T. K. Chen; I.-M. Tsai; Y.-L. Lin; H. L. Liu; C. L. Chen; F. C. Hsu; T. W. Huang; T. B. Wu; M. K. Wu

J. Appl. Phys. 110, 113919 (2011) https://doi.org/10.1063/1.3665714

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Supplementary Material

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Interface engineering using ferromagnetic nanoparticles for enhancing pinning in YBa₂Cu₃O₇₋_δ thin film

Alok K. Jha; Neeraj Khare; R. Pinto

J. Appl. Phys. 110, 113920 (2011) https://doi.org/10.1063/1.3665874

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Magnetic relaxation of a system of superparamagnetic particles weakly coupled by dipole-dipole interactions

Pierre-Michel Déjardin

J. Appl. Phys. 110, 113921 (2011) https://doi.org/10.1063/1.3665886

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Dielectrics and Ferroelectricity

Ferroelectric phase transition and low-temperature dielectric relaxations in Sr₄(La_1−xSm_x)₂Ti₄Nb₆O₃₀ ceramics

Xiao Li Zhu; Yang Bai; Xiao Qiang Liu; Xiang Ming Chen

J. Appl. Phys. 110, 114101 (2011) https://doi.org/10.1063/1.3664857

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Local density of trap states in SiO₂ and Si₃N₄ films studied by single electron tunneling force spectroscopy

Dustin Winslow; Clayton Williams

J. Appl. Phys. 110, 114102 (2011) https://doi.org/10.1063/1.3662145

Abstract

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Electronic structure of silicon oxynitride: Ab-initio and experimental study, comparison with silicon nitride

S. S. Nekrashevich; V. A. Gritsenko

J. Appl. Phys. 110, 114103 (2011) https://doi.org/10.1063/1.3653833

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Area dependent deep depletion behavior in the capacitance-voltage characteristics of metal-oxide-semiconductor structures with ultra-thin oxides

Kuan-Ming Chen; Jenn-Gwo Hwu

J. Appl. Phys. 110, 114104 (2011) https://doi.org/10.1063/1.3664767

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Structural, electronic, and dielectric properties of amorphous hafnium silicates

Tsung-Ju Chen; Chin-Lung Kuo

J. Appl. Phys. 110, 114105 (2011) https://doi.org/10.1063/1.3664780

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Modeling the switching kinetics in ferroelectrics

Herbert Kliem; Markus Kuehn

J. Appl. Phys. 110, 114106 (2011) https://doi.org/10.1063/1.3660680

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Dependence of optimized annealing temperature for tetragonal phase formation on the Si concentration of atomic-layer-deposited Hf-silicate film

Hyo Kyeom Kim; Hyung-Suk Jung; Jae Hyuck Jang; Jinho Park; Tae Joo Park; Seok-Hee Lee; Cheol Seong Hwang

J. Appl. Phys. 110, 114107 (2011) https://doi.org/10.1063/1.3665411

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Unification of three multiphonon trap-assisted tunneling mechanisms

Manhong Zhang; Zongliang Huo; Zhaoan Yu; Jing Liu; Ming Liu

J. Appl. Phys. 110, 114108 (2011) https://doi.org/10.1063/1.3662195

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Phase transitions in ferroelectric-paraelectric superlattices

A. P. Levanyuk; I. B. Misirlioglu

J. Appl. Phys. 110, 114109 (2011) https://doi.org/10.1063/1.3662197

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Oxygen deficiency and grain boundary-related giant relaxation in Ba(Zr,Ti)O₃ ceramics

Cristina E. Ciomaga; Maria T. Buscaglia; Vincenzo Buscaglia; Liliana Mitoseriu

J. Appl. Phys. 110, 114110 (2011) https://doi.org/10.1063/1.3664749

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Effect of strain and deadlayer on the polarization switching of ferroelectric thin film

Jie Wang; Yifan Xia; Long-Qing Chen; San-Qiang Shi

J. Appl. Phys. 110, 114111 (2011) https://doi.org/10.1063/1.3664913

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Structure, electrical and magnetic property investigations on dense Fe-doped hexagonal BaTiO₃

X. K. Wei; Y. T. Su; Y. Sui; Q. H. Zhang; Y. Yao; C. Q. Jin; R. C. Yu

J. Appl. Phys. 110, 114112 (2011) https://doi.org/10.1063/1.3658813

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Ferroelectricity in yttrium-doped hafnium oxide

J. Müller; U. Schröder; T. S. Böscke; I. Müller; U. Böttger; L. Wilde; J. Sundqvist; M. Lemberger; P. Kücher; T. Mikolajick; L. Frey

J. Appl. Phys. 110, 114113 (2011) https://doi.org/10.1063/1.3667205

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Origins of dielectric response and conductivity in (Bi_1−xNd_x)FeO₃ multiferroic ceramics

C.-S. Tu; W.-C. Yang; V. H. Schmidt; R. R. Chien

J. Appl. Phys. 110, 114114 (2011) https://doi.org/10.1063/1.3667204

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Broadening of metal-oxide-semiconductor admittance characteristics: Measurement, sources, and its effects on interface state density analyses

G. W. Paterson; M. C. Holland; I. G. Thayne; A. R. Long

J. Appl. Phys. 110, 114115 (2011) https://doi.org/10.1063/1.3665720

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Role of Pb(Zr_0.52Ti_0.48)O₃ substitution in multiferroic properties of polycrystalline BiFeO₃ thin films

F. Yan; T. J. Zhu; M. O. Lai; L. Lu

J. Appl. Phys. 110, 114116 (2011) https://doi.org/10.1063/1.3668123

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Forming-free resistive switching behaviors in Cr-embedded Ga₂O₃ thin film memories

Dai-Ying Lee; Tseung-Yuen Tseng

J. Appl. Phys. 110, 114117 (2011) https://doi.org/10.1063/1.3665871

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Magnetic field modulated dielectric relaxation behavior of Pt/BiScO₃-PbTiO₃/La_0.7Sr_0.3MnO₃ heterostructure in metal-insulator transition region: An equivalent-circuit method

Junyu Zhu; Jing Yang; Wei Bai; Chungang Duan; Shuai Zhang; Genshui Wang; Xianlin Dong; Denis Remiens; Xiaodong Tang

J. Appl. Phys. 110, 114118 (2011) https://doi.org/10.1063/1.3667289

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Dielectric relaxation and alternating current conductivity of polyvinylidene fluoride doped with lanthanum chloride

A. Hassen; T. Hanafy; S. El-Sayed; A. Himanshu

J. Appl. Phys. 110, 114119 (2011) https://doi.org/10.1063/1.3669396

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Correlation between polarity distribution and piezoelectric response of solution-deposited Zn_1-xLi_xO films

Toshimi Nagase; Toshihiro Kamohara; Keiko Nishikubo; Satoru Fukamachi; Kazuhisa Shobu; Morito Akiyama

J. Appl. Phys. 110, 114120 (2011) https://doi.org/10.1063/1.3665636

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The effective properties of three-dimensional giant magnetostrictive composites

Yuanwen Gao; Juanjuan Zhang

J. Appl. Phys. 110, 114121 (2011) https://doi.org/10.1063/1.3666025

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Nanoscale Science and Design

Mechanical response of nanometer thick self-assembled monolayers on metallic substrates using classical nanoindentation

Leila Costelle; Pasi Jalkanen; Minna T. Räisänen; Liina Lind; Roman Nowak; Jyrki Räisänen

J. Appl. Phys. 110, 114301 (2011) https://doi.org/10.1063/1.3663363

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Reorganization of Au nanoparticle Langmuir-Blodgett films on wet chemically passivated Si(001) surfaces

Sarathi Kundu; J. K. Bal

J. Appl. Phys. 110, 114302 (2011) https://doi.org/10.1063/1.3664696

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Surface effects on the wrinkling of piezoelectric films on compliant substrates

Yuhang Li; Bo Fang; Jiazhong Zhang; Jizhou Song

J. Appl. Phys. 110, 114303 (2011) https://doi.org/10.1063/1.3664750

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Thermally oxidized formation of new Ge dots over as-grown Ge dots in the Si capping layer

Tian-Xiao Nie; Jin-Hui Lin; Zhi-Gang Chen; Yuan-Min Shao; Yue-Qin Wu; Xin-Ju Yang; Yong-Liang Fan; Zui-Min Jiang; Jin Zou

J. Appl. Phys. 110, 114304 (2011) https://doi.org/10.1063/1.3665398

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Excitation of discrete and continuous spectrum for a surface conductivity model of graphene

George W. Hanson; Alexander B. Yakovlev; Arash Mafi

J. Appl. Phys. 110, 114305 (2011) https://doi.org/10.1063/1.3662883

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Nanostructure model of thermal conductivity for high thermoelectric performance

S. J. Poon; K. Limtragool

J. Appl. Phys. 110, 114306 (2011) https://doi.org/10.1063/1.3662947

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Impact of adsorbed organic monolayers on vacuum electron tunneling contributions to electrical resistance at an asperity contact

D. Berman; M. J. Walker; C. D. Nordquist; J. Krim

J. Appl. Phys. 110, 114307 (2011) https://doi.org/10.1063/1.3664770

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Nanometer optomechanical transistor based on nanometer cavity optomechanics with a single quantum dot

Jin-Jin Li; Ka-Di Zhu

J. Appl. Phys. 110, 114308 (2011) https://doi.org/10.1063/1.3665650

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Shape and orientation effects on the ballistic phonon thermal properties of ultra-scaled Si nanowires

Abhijeet Paul; Mathieu Luisier; Gerhard Klimeck

J. Appl. Phys. 110, 114309 (2011) https://doi.org/10.1063/1.3662177

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Thermal energy transport model for macro-to-nanograin polycrystalline semiconductors

Martin Maldovan

J. Appl. Phys. 110, 114310 (2011) https://doi.org/10.1063/1.3665211

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Screened field enhancement factor for the floating sphere model of a carbon nanotube array

A. I. Zhbanov; E. G. Pogorelov; Yia-Chung Chang; Yong-Gu Lee

J. Appl. Phys. 110, 114311 (2011) https://doi.org/10.1063/1.3665390

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Thermally activated magnetization and resistance decay during near ambient temperature aging of Co nanoflakes in a confining semi-metallic environment

Gregory. G. Kenning; Christopher Heidt; Aaron Barnes; James Martin; Benjamin Grove; Michael Madden

J. Appl. Phys. 110, 114312 (2011) https://doi.org/10.1063/1.3662150

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Two-dimensional plasmonic nanosurface for photovoltaics

Alessia Polemi; Kevin L. Shuford

J. Appl. Phys. 110, 114313 (2011) https://doi.org/10.1063/1.3667194

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Heterodyne picosecond thermoreflectance applied to nanoscale thermal metrology

S. Dilhaire; G. Pernot; G. Calbris; J. M. Rampnoux; S. Grauby

J. Appl. Phys. 110, 114314 (2011) https://doi.org/10.1063/1.3665129

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Self-driven soft imaging in liquid by means of photothermal excitation

P. Paoletti; M. Basso; V. Pini; B. Tiribilli; M. Vassalli

J. Appl. Phys. 110, 114315 (2011) https://doi.org/10.1063/1.3665396

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Ferromagnetic ZnO nanocrystals and Al-induced defects

Chinmay Phadnis; Darshana Y. Inamdar; Igor Dubenko; Arjun Pathak; Naushad Ali; Shailaja Mahamuni

J. Appl. Phys. 110, 114316 (2011) https://doi.org/10.1063/1.3665637

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Size dependent bandgap of molecular beam epitaxy grown InN quantum dots measured by scanning tunneling spectroscopy

Mahesh Kumar; Mohana K. Rajpalke; Thirumaleshwara N. Bhat; Basanta Roul; A. T. Kalghatgi; S. B. Krupanidhi

J. Appl. Phys. 110, 114317 (2011) https://doi.org/10.1063/1.3665639

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Nanoshells as a high-pressure gauge analyzed to 200 GPa

Nick Van den Broeck; Katrijn Putteneers; Jacques Tempere; Isaac F. Silvera

J. Appl. Phys. 110, 114318 (2011) https://doi.org/10.1063/1.3665649

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Modulating emission from acceptor in donor-acceptor diblock copolymers by plasmon resonance energy transfer

Fan Kong; Xueqin Zhang; Xianzhong Lang; Baoping Lin; Yimin Yang; Teng Qiu

J. Appl. Phys. 110, 114319 (2011) https://doi.org/10.1063/1.3665722

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Linear and nonlinear intersubband optical properties of Si quantum dot embedded in oxide, nitride, and carbide matrix

Anchala; S. P. Purohit; K. C. Mathur

J. Appl. Phys. 110, 114320 (2011) https://doi.org/10.1063/1.3665687

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GaAs nanostructuring by self-organized stencil mask ion lithography

Z. Q. Zhang; D. Chiappe; A. Toma; C. Boragno; J. D. Guo; E. G. Wang; F. Buatier de Mongeot

J. Appl. Phys. 110, 114321 (2011) https://doi.org/10.1063/1.3665693

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Signature of strong ferromagnetism and optical properties of Co doped TiO₂ nanoparticles

Batakrushna Santara; Bappaditya Pal; P. K. Giri

J. Appl. Phys. 110, 114322 (2011) https://doi.org/10.1063/1.3665883

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Large piezoresistance of single silicon nano-needles induced by non-uniaxial strain

Zhiming Xiao; Juncong She; Shaozhi Deng; Ningsheng Xu

J. Appl. Phys. 110, 114323 (2011) https://doi.org/10.1063/1.3662917

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Device Physics

Vertical design of cubic GaN-based high electron mobility transistors

R. Granzner; E. Tschumak; M. Kittler; K. Tonisch; W. Jatal; J. Pezoldt; D. As; F. Schwierz

J. Appl. Phys. 110, 114501 (2011) https://doi.org/10.1063/1.3663364

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Capacitance study of inversion at the amorphous-crystalline interface of n-type silicon heterojunction solar cells

Jian V. Li; Richard S. Crandall; David L. Young; Matthew R. Page; Eugene Iwaniczko; Qi Wang

J. Appl. Phys. 110, 114502 (2011) https://doi.org/10.1063/1.3663433

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Effect of annealing time on bias stress and light-induced instabilities in amorphous indium–gallium–zinc-oxide thin-film transistors

Md Delwar Hossain Chowdhury; Sang Hyun Ryu; Piero Migliorato; Jin Jang

J. Appl. Phys. 110, 114503 (2011) https://doi.org/10.1063/1.3662869

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Mobility and Dit distributions for p-channel MOSFETs with HfO₂/LaGeO_x passivating layers on germanium

C. Andersson; M. J. Süess; D. J. Webb; C. Marchiori; M. Sousa; D. Caimi; H. Siegwart; J. Fompeyrine

J. Appl. Phys. 110, 114504 (2011) https://doi.org/10.1063/1.3660717

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InGaAs-based bow-tie diode for spectroscopic terahertz imaging

I. Kašalynas; R. Venckevičius; D. Seliuta; I. Grigelionis; G. Valušis

J. Appl. Phys. 110, 114505 (2011) https://doi.org/10.1063/1.3658017

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A transmission line model for the optical simulation of multilayer structures and its application for oblique illumination of an organic solar cell with anisotropic extinction coefficient

N. A. Stathopoulos; L. C. Palilis; S. R. Yesayan; S. P. Savaidis; M. Vasilopoulou; P. Argitis

J. Appl. Phys. 110, 114506 (2011) https://doi.org/10.1063/1.3662952

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An acoustic bending waveguide designed by graded sonic crystals

Liang-Yu Wu; Lien-Wen Chen

J. Appl. Phys. 110, 114507 (2011) https://doi.org/10.1063/1.3664856

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A study of the impact of dislocations on the thermoelectric properties of quantum wells in the Si/SiGe materials system

Jeremy R. Watling; Douglas J. Paul

J. Appl. Phys. 110, 114508 (2011) https://doi.org/10.1063/1.3665127

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Voltage modulated electro-luminescence spectroscopy to understand negative capacitance and the role of sub-bandgap states in light emitting devices

Kanika Bansal; Shouvik Datta

J. Appl. Phys. 110, 114509 (2011) https://doi.org/10.1063/1.3665128

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Magnetoelectric nonlinearity in magnetoelectric laminate sensors

Liangguo Shen; Menghui Li; Junqi Gao; Ying Shen; J. F. Li; D. Viehland; X. Zhuang; M. Lam Chok Sing; C. Cordier; S. Saez; C. Dolabdjian

J. Appl. Phys. 110, 114510 (2011) https://doi.org/10.1063/1.3665130

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Experimental evidence of direct contact formation for the current transport in silver thick film metallized silicon emitters

Enrique Cabrera; Sara Olibet; Joachim Glatz-Reichenbach; Radovan Kopecek; Daniel Reinke; Gunnar Schubert

J. Appl. Phys. 110, 114511 (2011) https://doi.org/10.1063/1.3665718

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A universal law to characterize ohmic contacts of small high electron mobility transistors

C. Chaubet; O. Couturaud; D. Mailly

J. Appl. Phys. 110, 114512 (2011) https://doi.org/10.1063/1.3662920

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Analytical model of the thin-film silicon-on-insulator tunneling field effect transistor

V. Dobrovolsky; F. Sizov

J. Appl. Phys. 110, 114513 (2011) https://doi.org/10.1063/1.3660795

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ON-state critical gate overdrive voltage for fluorine-implanted enhancement-mode AlGaN/GaN high electron mobility transistors

Chenyue Ma; Hongwei Chen; Chunhua Zhou; Sen Huang; Li Yuan; John Roberts; Kevin. J. Chen

J. Appl. Phys. 110, 114514 (2011) https://doi.org/10.1063/1.3664912

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Dielectrophoretic assembly and atomic force microscopy modification of reduced graphene oxide

Yu Zhang; Lianqing Liu; Ning Xi; Yuechao Wang; Zaili Dong; Uchechukwu C. Wejinya

J. Appl. Phys. 110, 114515 (2011) https://doi.org/10.1063/1.3665212

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A polarization independent liquid crystal phase modulation adopting surface pinning effect of polymer dispersed liquid crystals

Yi-Hsin Lin; Yu-Shih Tsou

J. Appl. Phys. 110, 114516 (2011) https://doi.org/10.1063/1.3666053

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Temperature dependent tuning of the flat band voltages of TiO₂/Si interfaces

F. Nasim; A. Ali; A. S. Bhatti; S. Naseem

J. Appl. Phys. 110, 114517 (2011) https://doi.org/10.1063/1.3665208

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Modulating resistive switching by diluted additive of poly(vinylpyrrolidone) in poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate)

J. Yang; F. Zeng; Z. S. Wang; C. Chen; G. Y. Wang; Y. S. Lin; F. Pan

J. Appl. Phys. 110, 114518 (2011) https://doi.org/10.1063/1.3666057

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Field confinement and quality factor of the multilayer cavity resonators

N. Yogesh; V. Subramanian

J. Appl. Phys. 110, 114519 (2011) https://doi.org/10.1063/1.3667292

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Crystallization properties and their drift dependence in phase-change memory studied with a micro-thermal stage

Chiyui Ahn; Byoungil Lee; Rakesh G. D. Jeyasingh; Mehdi Asheghi; G. A. M. Hurkx; Kenneth E. Goodson; H.-S. Philip Wong

J. Appl. Phys. 110, 114520 (2011) https://doi.org/10.1063/1.3667295

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Effect of the vertical composition gradient of active layer on the performance of bulk-heterojunction organic photovoltaic cell

Young Min Nam; June Huh; Won Ho Jo

J. Appl. Phys. 110, 114521 (2011) https://doi.org/10.1063/1.3666061

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Organic photodiodes on the base of cotton fibers/polymer composite

A. S. Zakirov; Sh. U. Yuldashev; H. D. Cho; J. C. Lee; T. W. Kang; A. T. Mamadalimov

J. Appl. Phys. 110, 114522 (2011) https://doi.org/10.1063/1.3668118

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Mach-Zehnder interferometric device for spin filtering in a GaAs/AlGaAs electron gas

Benjamin Santos; Ernesto Medina; Alexander López; Bertrand Berche

J. Appl. Phys. 110, 114523 (2011) https://doi.org/10.1063/1.3665702

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The significance of Debye length in disordered doped organic devices

Munira Raja; Bill Eccleston

J. Appl. Phys. 110, 114524 (2011) https://doi.org/10.1063/1.3666063

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Applied Biophysics

Behavior of peptides combining 1 alanine residue and 8 glycine residues on papain associated with structural fluctuations

Katsuhiko Nishiyama

J. Appl. Phys. 110, 114701 (2011) https://doi.org/10.1063/1.3665701

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Interdisciplinary and General Physics

Analytical and experimental study on the fluid structure interaction during air blast loading

Erheng Wang; Jefferson Wright; Arun Shukla

J. Appl. Phys. 110, 114901 (2011) https://doi.org/10.1063/1.3662948

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Subharmonic excitation in amplitude modulation atomic force microscopy in the presence of adsorbed water layers

Sergio Santos; Victor Barcons; Albert Verdaguer; Matteo Chiesa

J. Appl. Phys. 110, 114902 (2011) https://doi.org/10.1063/1.3663437

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About the internal pressure in cavities derived from implantation-induced blistering in semi-conductors

G. Parry; C. Coupeau; E. Dion; M.-L. David; J. Colin; J. Grilhé

J. Appl. Phys. 110, 114903 (2011) https://doi.org/10.1063/1.3664741

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Ionodeterioration of the silicon nanocrystal photoluminescence

J. Demarche; D. Barba; G. G. Ross; G. Terwagne

J. Appl. Phys. 110, 114904 (2011) https://doi.org/10.1063/1.3665034

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Electrical conductivity of platinum-implanted polymethylmethacrylate nanocomposite

M. C. Salvadori; F. S. Teixeira; M. Cattani; I. G. Brown

J. Appl. Phys. 110, 114905 (2011) https://doi.org/10.1063/1.3668096

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Impact of film thickness of organic semiconductor on off-state current of organic thin film transistors

M. Nurul Islam

J. Appl. Phys. 110, 114906 (2011) https://doi.org/10.1063/1.3663355

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Characterization of damage-induced magnetization for 304 austenitic stainless steel

Hongmei Li (李红梅); Zhenmao Chen (陈振茂); Yong Li (李勇)

J. Appl. Phys. 110, 114907 (2011) https://doi.org/10.1063/1.3667288

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Role of material properties and mesostructure on dynamic deformation and shear instability in Al-W granular composites

K. L. Olney; P. H. Chiu; C. W. Lee; V. F. Nesterenko; D. J. Benson

J. Appl. Phys. 110, 114908 (2011) https://doi.org/10.1063/1.3665644

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Electric field compensation and sensing with a single ion in a planar trap

S. Narayanan; N. Daniilidis; S. A. Möller; R. Clark; F. Ziesel; K. Singer; F. Schmidt-Kaler; H. Häffner

J. Appl. Phys. 110, 114909 (2011) https://doi.org/10.1063/1.3665647

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Epitaxial growth of Fe and MgO layers on GaAs (001): Microstructure and magnetic property

Kyung-Ho Kim; Hyung-jun Kim; Jae-Pyung Ahn; Seung-Cheol Lee; Sung Ok Won; Jun Woo Choi; Joonyeon Chang

J. Appl. Phys. 110, 114910 (2011) https://doi.org/10.1063/1.3665887

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Structure and morphology of an organic/inorganic multilayer stack: An x-ray reflectivity study

Alfred Neuhold; Stefanie Fladischer; Stefan Mitsche; Heinz-Georg Flesch; Armin Moser; Jiri Novak; Detlef M. Smilgies; Elke Kraker; Bernhard Lamprecht; Anja Haase; Werner Grogger; Roland Resel

J. Appl. Phys. 110, 114911 (2011) https://doi.org/10.1063/1.3667171

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ERRATA

Publisher’s Note: “Design of resonant-cavity-enhanced multi-band photodetectors” [J. Appl. Phys. 110, 043112 (2011)]

Yan-Feng Lao; Gamini Ariyawansa; A. G. Unil Perera

J. Appl. Phys. 110, 119901 (2011) https://doi.org/10.1063/1.3666229

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Publisher’s Note: “Effect of incomplete ionization for the description of highly aluminum-doped silicon” [J. Appl. Phys. 110, 024508 (2011)]

Marc Rüdiger; Michael Rauer; Christian Schmiga; Martin Hermle

J. Appl. Phys. 110, 119902 (2011) https://doi.org/10.1063/1.3659721

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Publisher’s Note: “Excitonic couplings and Stark effect in individual quantum dot molecules” [J. Appl. Phys. 110, 083511 (2011)]

A. Boyer de la Giroday; N. Sköld; I. Farrer; D. A. Ritchie; A. J. Shields

J. Appl. Phys. 110, 119903 (2011) https://doi.org/10.1063/1.3668127

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Publisher’s Note: “Investigation statistics of bipolar multilevel memristive mechanism and characterizations in a thin FeO_x transition layer of TiN/SiO₂/FeO_x/Fe structure” [J. Appl. Phys. 110, 053703 (2011)]

Yao-Feng Chang; Ting-Chang Chang; Chun-Yen Chang

J. Appl. Phys. 110, 119904 (2011) https://doi.org/10.1063/1.3668129

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Publisher’s Note: “Boron-deuterium complexes in diamond: How inhomogeneity leads to incorrect carrier type identification” [J. Appl. Phys. 110, 033718 (2011)]

A. Kumar; J. Pernot; F. Omnès; P. Muret; A. Traoré; L. Magaud; A. Deneuville; N. Habka; J. Barjon; F. Jomard; M. A. Pinault; J. Chevallier; C. Mer-Calfati; J. C. Arnault; P. Bergonzo

J. Appl. Phys. 110, 119905 (2011) https://doi.org/10.1063/1.3665435

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