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APPLIED PHYSICS REVIEWS—FOCUSED REVIEW

Critical assessment of the issues in the modeling of ablation and plasma expansion processes in the pulsed laser deposition of metals

Deepak Marla; Upendra V. Bhandarkar; Suhas S. Joshi

J. Appl. Phys. 109, 021101 (2011) https://doi.org/10.1063/1.3537838

Abstract

View articletitled, Critical assessment of the issues in the modeling of ablation and plasma expansion processes in the pulsed laser deposition of metals

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ARTICLES

Lasers, Optics, and Optoelectronics

Some consequences of experiments with a plasmonic quantum eraser for plasmon tomography

L. Grave de Peralta; R. Lopez-Boada; A. Ruiz-Columbié; S. Park; A. A. Bernussi

J. Appl. Phys. 109, 023101 (2011) https://doi.org/10.1063/1.3533730

Abstract

View articletitled, Some consequences of experiments with a plasmonic quantum eraser for plasmon tomography

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Pd nanoparticles formation by femtosecond laser irradiation and the nonlinear optical properties at 532 nm using nanosecond laser pulses

Guanghua Fan; Shiliang Qu; Qiang Wang; Chongjun Zhao; Lei Zhang; Zhongguo Li

J. Appl. Phys. 109, 023102 (2011) https://doi.org/10.1063/1.3533738

Abstract

View articletitled, Pd nanoparticles formation by femtosecond laser irradiation and the nonlinear optical properties at 532 nm using nanosecond laser pulses

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Tight-binding analysis of coupling effects in metamaterials

Hao Xu; Qiong He; Shiyi Xiao; Bin Xi; Jiaming Hao; Lei Zhou

J. Appl. Phys. 109, 023103 (2011) https://doi.org/10.1063/1.3533948

Abstract

View articletitled, Tight-binding analysis of coupling effects in metamaterials

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Plasmonic metamaterials for ultrasensitive refractive index sensing at near infrared

Yang Gu; Qiuze Li; Jie Xiao; Kedi Wu; Guo Ping Wang

J. Appl. Phys. 109, 023104 (2011) https://doi.org/10.1063/1.3533953

Abstract

View articletitled, Plasmonic metamaterials for ultrasensitive refractive index sensing at near infrared

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Electron spin relaxation in intrinsic bulk InP semiconductor

Hong Ma; Zuanming Jin; Lihua Wang; Guohong Ma

J. Appl. Phys. 109, 023105 (2011) https://doi.org/10.1063/1.3533965

Abstract

View articletitled, Electron spin relaxation in intrinsic bulk InP semiconductor

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Enhanced photorefractivity in a polymeric composite photosensitized with carbon nanotubes grafted to a photoconductive polymer

Naveen K. Lingam; Sonali Kalghatgi; Jeffrey G. Winiarz

J. Appl. Phys. 109, 023106 (2011) https://doi.org/10.1063/1.3530583

Abstract

View articletitled, Enhanced photorefractivity in a polymeric composite photosensitized with carbon nanotubes grafted to a photoconductive polymer

Supplementary Material

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Air-spaced GaN nanopillar photonic band gap structures patterned by nanosphere lithography

K. H. Li; H. W. Choi

J. Appl. Phys. 109, 023107 (2011) https://doi.org/10.1063/1.3531972

Abstract

View articletitled, Air-spaced GaN nanopillar photonic band gap structures patterned by nanosphere lithography

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Sellmeier and thermo-optic dispersion formulas for ${CsTiOAsO}_{4}$

Takuya Mikami; Takayuki Okamoto; Kiyoshi Kato

J. Appl. Phys. 109, 023108 (2011) https://doi.org/10.1063/1.3525800

Abstract

View articletitled, Sellmeier and thermo-optic dispersion formulas for <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mrow><mtext>CsTiOAsO</mtext></mrow><mn>4</mn></msub></mrow></math>

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Ab initio study of the bandgap engineering of ${Al}_{1 - x} {Ga}_{x} N$ for optoelectronic applications

B. Amin; Iftikhar Ahmad; M. Maqbool; S. Goumri-Said; R. Ahmad

J. Appl. Phys. 109, 023109 (2011) https://doi.org/10.1063/1.3531996

Abstract

View articletitled, Ab initio study of the bandgap engineering of <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mrow><mtext>Al</mtext></mrow><mrow><mn>1</mn><mo>−</mo><mtext>x</mtext></mrow></msub><msub><mrow><mtext>Ga</mtext></mrow><mtext>x</mtext></msub><mtext>N</mtext></mrow></math> for optoelectronic applications

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Effect of deoxyribonucleic acid on nonlinear optical properties of Rhodamine 6G-polyvinyl alcohol solution

B. Nithyaja; H. Misha; P. Radhakrishnan; V. P. N. Nampoori

J. Appl. Phys. 109, 023110 (2011) https://doi.org/10.1063/1.3520657

Abstract

View articletitled, Effect of deoxyribonucleic acid on nonlinear optical properties of Rhodamine 6G-polyvinyl alcohol solution

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Angle insensitive enhancement of organic solar cells using metallic gratings

Aimi Abass; Honghui Shen; Peter Bienstman; Bjorn Maes

J. Appl. Phys. 109, 023111 (2011) https://doi.org/10.1063/1.3533980

Abstract

View articletitled, Angle insensitive enhancement of organic solar cells using metallic gratings

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Deep-ultraviolet light excites surface plasmon for the enhancement of photoelectron emission

Yusuke Watanabe; Wataru Inami; Yoshimasa Kawata

J. Appl. Phys. 109, 023112 (2011) https://doi.org/10.1063/1.3537823

Abstract

View articletitled, Deep-ultraviolet light excites surface plasmon for the enhancement of photoelectron emission

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Nonsaturable absorption in alumino-silicate bismuth-doped fibers

A. V. Kir’yanov; V. V. Dvoyrin; V. M. Mashinsky; Yu. O. Barmenkov; E. M. Dianov

J. Appl. Phys. 109, 023113 (2011) https://doi.org/10.1063/1.3532049

Abstract

View articletitled, Nonsaturable absorption in alumino-silicate bismuth-doped fibers

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Low dark current metal-semiconductor-metal ultraviolet photodetectors based on sol-gel-derived ${TiO}_{2}$ films

Yannan Xie; Huolin Huang; Weifeng Yang; Zhengyun Wu

J. Appl. Phys. 109, 023114 (2011) https://doi.org/10.1063/1.3537918

Abstract

View articletitled, Low dark current metal-semiconductor-metal ultraviolet photodetectors based on sol-gel-derived <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mrow><mtext>TiO</mtext></mrow><mn>2</mn></msub></mrow></math> films

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Experimental evidence of resonant effective permittivity in a dielectric metamaterial

T. Lepetit; É. Akmansoy; J.-P. Ganne

J. Appl. Phys. 109, 023115 (2011) https://doi.org/10.1063/1.3537920

Abstract

View articletitled, Experimental evidence of resonant effective permittivity in a dielectric metamaterial

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Plasmas and Electrical Discharges

Microwave $N_{2} - Ar$ plasma torch. I. Modeling

J. Henriques; E. Tatarova; C. M. Ferreira

J. Appl. Phys. 109, 023301 (2011) https://doi.org/10.1063/1.3532055

Abstract

View articletitled, Microwave <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mtext>N</mtext><mn>2</mn></msub><mo>–</mo><mtext>Ar</mtext></mrow></math> plasma torch. I. Modeling

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Microwave $N_{2} - Ar$ plasma torch. II. Experiment and comparison with theory

J. Henriques; E. Tatarova; F. M. Dias; C. M. Ferreira

J. Appl. Phys. 109, 023302 (2011) https://doi.org/10.1063/1.3532056

Abstract

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Ultrananocrystalline diamond film deposition by direct-current plasma assisted chemical vapor deposition using hydrogen-rich precursor gas in the absence of the positive column

Hak-Joo Lee; Hyeongtag Jeon; Wook-Seong Lee

J. Appl. Phys. 109, 023303 (2011) https://doi.org/10.1063/1.3533764

Abstract

View articletitled, Ultrananocrystalline diamond film deposition by direct-current plasma assisted chemical vapor deposition using hydrogen-rich precursor gas in the absence of the positive column

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Structural, Mechanical, Thermodynamic, and Optical Properties of Condensed Matter

Atomic scale evidence of the suppression of boron clustering in implanted silicon by carbon coimplantation

T. Philippe; S. Duguay; D. Mathiot; D. Blavette

J. Appl. Phys. 109, 023501 (2011) https://doi.org/10.1063/1.3533416

Abstract

View articletitled, Atomic scale evidence of the suppression of boron clustering in implanted silicon by carbon coimplantation

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Effective coordination concept applied for phase change ${(GeTe)}_{m} {({Sb}_{2} {Te}_{3})}_{n}$ compounds

Juarez L. F. Da Silva

J. Appl. Phys. 109, 023502 (2011) https://doi.org/10.1063/1.3533422

Abstract

View articletitled, Effective coordination concept applied for phase change <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mrow><mrow><mo>(</mo><mrow><mtext>GeTe</mtext></mrow><mo>)</mo></mrow></mrow><mi>m</mi></msub><msub><mrow><mrow><mo>(</mo><mrow><msub><mrow><mtext>Sb</mtext></mrow><mn>2</mn></msub><msub><mrow><mtext>Te</mtext></mrow><mn>3</mn></msub></mrow><mo>)</mo></mrow></mrow><mi>n</mi></msub></mrow></math> compounds

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Thermal and shock induced modification inside a silica glass by focused femtosecond laser pulse

Masaaki Sakakura; Masahide Terazima; Yasuhiko Shimotsuma; Kiyotaka Miura; Kazuyuki Hirao

J. Appl. Phys. 109, 023503 (2011) https://doi.org/10.1063/1.3533431

Abstract

View articletitled, Thermal and shock induced modification inside a silica glass by focused femtosecond laser pulse

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Thermodynamic and mechanical stabilities of $γ^{'} {-Ir}_{3} (Al, W)$

Chao Jiang; Yong Du

J. Appl. Phys. 109, 023504 (2011) https://doi.org/10.1063/1.3533772

Abstract

View articletitled, Thermodynamic and mechanical stabilities of <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msup><mi>γ</mi><mo>′</mo></msup><msub><mrow><mtext>-Ir</mtext></mrow><mn>3</mn></msub><mrow><mo>(</mo><mrow><mtext>Al</mtext><mo>,</mo><mtext>W</mtext></mrow><mo>)</mo></mrow></mrow></math>

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Stability in the memory state of the silica nanoparticle-doped hybrid aligned nematic device

Chi-Yen Huang; Jian-Hong Chen; Chia-Ting Hsieh; Heng-Cheng Song; Yu-Wu Wang; Lance Horng; Ching-Jui Tian; Shug-June Hwang

J. Appl. Phys. 109, 023505 (2011) https://doi.org/10.1063/1.3531993

Abstract

View articletitled, Stability in the memory state of the silica nanoparticle-doped hybrid aligned nematic device

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Systematic study of sensitized ${LaF}_{3} : {Eu}^{3 +}$ nanoparticles

S. Janssens; G. V. M. Williams; D. Clarke

J. Appl. Phys. 109, 023506 (2011) https://doi.org/10.1063/1.3531994

Abstract

View articletitled, Systematic study of sensitized <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mrow><mtext>LaF</mtext></mrow><mn>3</mn></msub><mo>:</mo><msup><mrow><mtext>Eu</mtext></mrow><mrow><mn>3</mn><mo>+</mo></mrow></msup></mrow></math> nanoparticles

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Mechanical properties and chemical bonding characteristics of ${Cr}_{7} C_{3}$ type multicomponent carbides

B. Xiao; J. Feng; C. T. Zhou; Y. H. Jiang; R. Zhou

J. Appl. Phys. 109, 023507 (2011) https://doi.org/10.1063/1.3532038

Abstract

View articletitled, Mechanical properties and chemical bonding characteristics of <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mrow><mtext>Cr</mtext></mrow><mn>7</mn></msub><msub><mtext>C</mtext><mn>3</mn></msub></mrow></math> type multicomponent carbides

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Optical and structural characterization of GaN thin films at different N to Ga flux ratios

Ahmed M. El-Naggar

J. Appl. Phys. 109, 023508 (2011) https://doi.org/10.1063/1.3534001

Abstract

View articletitled, Optical and structural characterization of GaN thin films at different N to Ga flux ratios

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Strain relief at the GaSb/GaAs interface versus substrate surface treatment and AlSb interlayers thickness

Y. Wang; P. Ruterana; L. Desplanque; S. El Kazzi; X. Wallart

J. Appl. Phys. 109, 023509 (2011) https://doi.org/10.1063/1.3532053

Abstract

View articletitled, Strain relief at the GaSb/GaAs interface versus substrate surface treatment and AlSb interlayers thickness

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Initial misfit dislocations in a graded heteroepitaxial layer

D. Sidoti; S. Xhurxhi; T. Kujofsa; S. Cheruku; J. P. Correa; B. Bertoli; P. B. Rago; E. N. Suarez; F. C. Jain; J. E. Ayers

J. Appl. Phys. 109, 023510 (2011) https://doi.org/10.1063/1.3533995

Abstract

View articletitled, Initial misfit dislocations in a graded heteroepitaxial layer

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X-ray characterization of Ge epitaxially grown on nanostructured Si(001) wafers

P. Zaumseil; Y. Yamamoto; A. Bauer; M. A. Schubert; T. Schroeder

J. Appl. Phys. 109, 023511 (2011) https://doi.org/10.1063/1.3537829

Abstract

View articletitled, X-ray characterization of Ge epitaxially grown on nanostructured Si(001) wafers

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Structure evolution of magnetron sputtered ${TiO}_{2}$ thin films

Stanislav Mráz; Jochen M. Schneider

J. Appl. Phys. 109, 023512 (2011) https://doi.org/10.1063/1.3536635

Abstract

View articletitled, Structure evolution of magnetron sputtered <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mrow><mtext>TiO</mtext></mrow><mn>2</mn></msub></mrow></math> thin films

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Formation and annealing of dislocation loops induced by nitrogen implantation of ZnO

Guillaume Perillat-Merceroz; Patrice Gergaud; Pascal Marotel; Stephane Brochen; Pierre-Henri Jouneau; Guy Feuillet

J. Appl. Phys. 109, 023513 (2011) https://doi.org/10.1063/1.3537917

Abstract

View articletitled, Formation and annealing of dislocation loops induced by nitrogen implantation of ZnO

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Effect of shock compression on wurtzite-type ZnMgS crystals

Tsutomu Mashimo; Emil Omurzak; Liliang Chen; Ryuichi Inoue; Chihiro Kawai

J. Appl. Phys. 109, 023514 (2011) https://doi.org/10.1063/1.3532045

Abstract

View articletitled, Effect of shock compression on wurtzite-type ZnMgS crystals

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Double step structure and meandering due to the many body interaction at GaN(0001) surface in N-rich conditions

Magdalena A. Załuska-Kotur; Filip Krzyżewski; Stanisław Krukowski

J. Appl. Phys. 109, 023515 (2011) https://doi.org/10.1063/1.3536516

Abstract

View articletitled, Double step structure and meandering due to the many body interaction at GaN(0001) surface in N-rich conditions

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Superhard $B_{2} C_{2} N_{2}$ compounds from first-principles calculations

Luo Xiaoguang; Li Luyan; Wang Weihua; Tian Yongjun

J. Appl. Phys. 109, 023516 (2011) https://doi.org/10.1063/1.3544070

Abstract

View articletitled, Superhard <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mtext>B</mtext><mn>2</mn></msub><msub><mtext>C</mtext><mn>2</mn></msub><msub><mtext>N</mtext><mn>2</mn></msub></mrow></math> compounds from first-principles calculations

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Structure and physical properties of ${Ge}_{x} {As}_{y} {Se}_{1 - x - y}$ glasses with the same mean coordination number of 2.5

R. P. Wang; D. Bulla; Anita Smith; T. Wang; Barry Luther-Davies

J. Appl. Phys. 109, 023517 (2011) https://doi.org/10.1063/1.3544309

Abstract

View articletitled, Structure and physical properties of <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mrow><mtext>Ge</mtext></mrow><mtext>x</mtext></msub><msub><mrow><mtext>As</mtext></mrow><mtext>y</mtext></msub><msub><mrow><mtext>Se</mtext></mrow><mrow><mn>1</mn><mo>−</mo><mtext>x</mtext><mo>−</mo><mtext>y</mtext></mrow></msub></mrow></math> glasses with the same mean coordination number of 2.5

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Adhesion of tungsten carbide reinforced amorphous hydrocarbon thin films (WC/a-C:H) to steel substrates for tribological applications

R. D. Evans; P. J. Shiller; J. Y. Howe

J. Appl. Phys. 109, 023518 (2011) https://doi.org/10.1063/1.3544045

Abstract

View articletitled, Adhesion of tungsten carbide reinforced amorphous hydrocarbon thin films (WC/a-C:H) to steel substrates for tribological applications

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Chemistry of defect induced photoluminescence in chalcopyrites: The case of ${CuAlS}_{2}$

Leandro M. Liborio; Christine L. Bailey; Giuseppe Mallia; Stanko Tomić; Nicholas M. Harrison

J. Appl. Phys. 109, 023519 (2011) https://doi.org/10.1063/1.3544206

Abstract

View articletitled, Chemistry of defect induced photoluminescence in chalcopyrites: The case of <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mrow><mtext>CuAlS</mtext></mrow><mn>2</mn></msub></mrow></math>

Supplementary Material

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Electronic Structure and Transport

Charge injection barriers and chemical interaction at the $CdTe / {NbSe}_{2}$ interface

Matthäus A. Wolak; Sebastian Gutmann; Matthew Conrad; Martin M. Beerbom; Chris Ferekides; Rudy Schlaf

J. Appl. Phys. 109, 023701 (2011) https://doi.org/10.1063/1.3533424

Abstract

View articletitled, Charge injection barriers and chemical interaction at the <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mtext>CdTe</mtext><mo>/</mo><msub><mrow><mtext>NbSe</mtext></mrow><mn>2</mn></msub></mrow></math> interface

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High electron mobility due to sodium ions in the gate oxide of SiC-metal-oxide-semiconductor field-effect transistors

B. R. Tuttle; S. Dhar; S.-H. Ryu; X. Zhu; J. R. Williams; L. C. Feldman; S. T. Pantelides

J. Appl. Phys. 109, 023702 (2011) https://doi.org/10.1063/1.3533767

Abstract

View articletitled, High electron mobility due to sodium ions in the gate oxide of SiC-metal-oxide-semiconductor field-effect transistors

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Determination of satellite valley position in GaN emitter from photoexcited field emission investigations

M. Semenenko; O. Yilmazoglu; H. L. Hartnagel; D. Pavlidis

J. Appl. Phys. 109, 023703 (2011) https://doi.org/10.1063/1.3533770

Abstract

View articletitled, Determination of satellite valley position in GaN emitter from photoexcited field emission investigations

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Rashba-induced spin accumulation in a quantum wire with an impurity

Sha Zhang; Weijiang Gong; Guozhu Wei; An Du

J. Appl. Phys. 109, 023704 (2011) https://doi.org/10.1063/1.3532036

Abstract

View articletitled, Rashba-induced spin accumulation in a quantum wire with an impurity

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Three-dimensional extended Hückel theory-nonequilibrium Green’s function spin polarized transport model for Fe/MgO/Fe heterostructures

Tehseen Z. Raza; Jorge I. Cerdá; Hassan Raza

J. Appl. Phys. 109, 023705 (2011) https://doi.org/10.1063/1.3525703

Abstract

View articletitled, Three-dimensional extended Hückel theory-nonequilibrium Green’s function spin polarized transport model for Fe/MgO/Fe heterostructures

Supplementary Material

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Hot electrons in wurtzite indium nitride

N. A. Masyukov; A. V. Dmitriev

J. Appl. Phys. 109, 023706 (2011) https://doi.org/10.1063/1.3533981

Abstract

View articletitled, Hot electrons in wurtzite indium nitride

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Effects of nitrogen incorporation on the electronic structure of rutile- ${TiO}_{2}$

J. W. Chai; M. Yang; Q. Chen; J. S. Pan; Z. Zhang; Y. P. Feng; S. J. Wang

J. Appl. Phys. 109, 023707 (2011) https://doi.org/10.1063/1.3532051

Abstract

View articletitled, Effects of nitrogen incorporation on the electronic structure of rutile-<math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mrow><mtext>TiO</mtext></mrow><mn>2</mn></msub></mrow></math>

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Electronic transport characterization of silicon wafers by combination of modulated free carrier absorption and photocarrier radiometry

Qiuping Huang; Bincheng Li

J. Appl. Phys. 109, 023708 (2011) https://doi.org/10.1063/1.3536620

Abstract

View articletitled, Electronic transport characterization of silicon wafers by combination of modulated free carrier absorption and photocarrier radiometry

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A semiquantitative approach to the impurity-band-related transport properties of GaMnAs nanolayers

E. J. R. de Oliveira; I. C. da Cunha Lima; E. Dias Cabral; M. A. Boselli

J. Appl. Phys. 109, 023709 (2011) https://doi.org/10.1063/1.3537746

Abstract

View articletitled, A semiquantitative approach to the impurity-band-related transport properties of GaMnAs nanolayers

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Study of field emission, electrical transport, and their correlation of individual single CuO nanowires

PengRui Shao; ShaoZhi Deng; Jun Chen; Jian Chen; NingSheng Xu

J. Appl. Phys. 109, 023710 (2011) https://doi.org/10.1063/1.3536478

Abstract

View articletitled, Study of field emission, electrical transport, and their correlation of individual single CuO nanowires

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Temperature dependence of carrier injection across organic heterojunctions

S. W. Tsang; Y. Tao; Z. H. Lu

J. Appl. Phys. 109, 023711 (2011) https://doi.org/10.1063/1.3536530

Abstract

View articletitled, Temperature dependence of carrier injection across organic heterojunctions

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Fabrication of iodine-doped pentacene thin films for organic thermoelectric devices

K. Hayashi; T. Shinano; Y. Miyazaki; T. Kajitani

J. Appl. Phys. 109, 023712 (2011) https://doi.org/10.1063/1.3537831

Abstract

View articletitled, Fabrication of iodine-doped pentacene thin films for organic thermoelectric devices

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Structural and electronic properties of hydrogenated polymorphous silicon films deposited at high rate

M. Y. Soro; M. E. Gueunier-Farret; J. P. Kleider

J. Appl. Phys. 109, 023713 (2011) https://doi.org/10.1063/1.3536474

Abstract

View articletitled, Structural and electronic properties of hydrogenated polymorphous silicon films deposited at high rate

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The effect of interface processing on the distribution of interfacial defect states and the C-V characteristics of III-V metal-oxide-semiconductor field effect transistors

Cheng-Wei Cheng (鄭政瑋); George Apostolopoulos; Eugene A. Fitzgerald

J. Appl. Phys. 109, 023714 (2011) https://doi.org/10.1063/1.3537915

Abstract

View articletitled, The effect of interface processing on the distribution of interfacial defect states and the C-V characteristics of III-V metal-oxide-semiconductor field effect transistors

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p-type silicon doping profiling using electrochemical anodization

Ahmed Gharbi; Boudjemaa Remaki; Aomar Halimaoui; Daniel Bensahel; Abdelkader Souifi

J. Appl. Phys. 109, 023715 (2011) https://doi.org/10.1063/1.3534005

Abstract

View articletitled, p-type silicon doping profiling using electrochemical anodization

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Electrical transport properties of the Si-doped cubic boron nitride thin films prepared by in situ cosputtering

J. Ying; X. W. Zhang; Z. G. Yin; H. R. Tan; S. G. Zhang; Y. M. Fan

J. Appl. Phys. 109, 023716 (2011) https://doi.org/10.1063/1.3544065

Abstract

View articletitled, Electrical transport properties of the Si-doped cubic boron nitride thin films prepared by in situ cosputtering

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Ballistic transport in GaN/AlGaN resonant tunneling diodes

S. Sakr; E. Warde; M. Tchernycheva; F. H. Julien

J. Appl. Phys. 109, 023717 (2011) https://doi.org/10.1063/1.3533975

Abstract

View articletitled, Ballistic transport in GaN/AlGaN resonant tunneling diodes

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Investigation of oxygen-related defects and the electrical properties of atomic layer deposited ${HfO}_{2}$ films using electron energy-loss spectroscopy

Jae Hyuck Jang; Hyung-Suk Jung; Jeong Hwan Kim; Sang Young Lee; Cheol Seong Hwang; Miyoung Kim

J. Appl. Phys. 109, 023718 (2011) https://doi.org/10.1063/1.3544039

Abstract

View articletitled, Investigation of oxygen-related defects and the electrical properties of atomic layer deposited <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mrow><mtext>HfO</mtext></mrow><mn>2</mn></msub></mrow></math> films using electron energy-loss spectroscopy

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Low thermal conductivity and enhanced thermoelectric performance of Gd-filled skutterudites

Ruiheng Liu; Xihong Chen; Pengfei Qiu; Jinfeng Liu; Jiong Yang; Xiangyang Huang; Lidong Chen

J. Appl. Phys. 109, 023719 (2011) https://doi.org/10.1063/1.3533743

Abstract

View articletitled, Low thermal conductivity and enhanced thermoelectric performance of Gd-filled skutterudites

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Magnetism and Superconductivity

Unusual magnetization process of ${Gd}_{5} {Ge}_{4}$ ⁠: Effects of impurities of Gd

Z. W. Ouyang; Z. C. Xia; Y. C. Wang; G. H. Rao

J. Appl. Phys. 109, 023901 (2011) https://doi.org/10.1063/1.3531995

Abstract

View articletitled, Unusual magnetization process of <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mrow><mtext>Gd</mtext></mrow><mn>5</mn></msub><msub><mrow><mtext>Ge</mtext></mrow><mn>4</mn></msub></mrow></math>⁠: Effects of impurities of Gd

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Magnetic characterization of diluted magnetic semiconductor thin films

Jian-Jun Gu; Li-Hu Liu; Yun-Kai Qi; Qin Xu; Hai-Feng Zhang; Hui-Yuan Sun

J. Appl. Phys. 109, 023902 (2011) https://doi.org/10.1063/1.3532043

Abstract

View articletitled, Magnetic characterization of diluted magnetic semiconductor thin films

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Effect of impurity doping at the Mn-site on magnetocaloric effect in ${Pr}_{0.6} {Ca}_{0.4} {Mn}_{0.96} B_{0.04} O_{3}$ (⁠ $B = Al$ ⁠, Fe, Cr, Ni, Co, and Ru)

V. Suresh Kumar; R. Mahendiran

J. Appl. Phys. 109, 023903 (2011) https://doi.org/10.1063/1.3531987

Abstract

View articletitled, Effect of impurity doping at the Mn-site on magnetocaloric effect in <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mrow><mtext>Pr</mtext></mrow><mrow><mn>0.6</mn></mrow></msub><msub><mrow><mtext>Ca</mtext></mrow><mrow><mn>0.4</mn></mrow></msub><msub><mrow><mtext>Mn</mtext></mrow><mrow><mn>0.96</mn></mrow></msub><msub><mtext>B</mtext><mrow><mn>0.04</mn></mrow></msub><msub><mtext>O</mtext><mn>3</mn></msub></mrow></math> (⁠<math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mtext>B</mtext><mo>=</mo><mtext>Al</mtext></mrow></math>⁠, Fe, Cr, Ni, Co, and Ru)

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In-field $J_{c}$ improvement by oxygen-free pyrene gas diffusion into highly dense ${MgB}_{2}$ superconductor

M. Maeda; J. H. Kim; Y. Zhao; Y.-U. Heo; K. Takase; Y. Kubota; C. Moriyoshi; F. Yoshida; Y. Kuroiwa; S. X. Dou

J. Appl. Phys. 109, 023904 (2011) https://doi.org/10.1063/1.3532033

Abstract

View articletitled, In-field <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mi>J</mi><mtext>c</mtext></msub></mrow></math> improvement by oxygen-free pyrene gas diffusion into highly dense <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mrow><mtext>MgB</mtext></mrow><mn>2</mn></msub></mrow></math> superconductor

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Ion irradiation effects on the exchange bias in IrMn/Co films

D. Schafer; P. L. Grande; L. G. Pereira; J. Geshev

J. Appl. Phys. 109, 023905 (2011) https://doi.org/10.1063/1.3532044

Abstract

View articletitled, Ion irradiation effects on the exchange bias in IrMn/Co films

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Fluctuation induced conductivity in $({Cu}_{0.5} {Tl}_{0.5 - x} K_{x}) {Ba}_{2} {Ca}_{3} {Cu}_{4} O_{12 - δ}$ superconductor

M. Mumtaz; S. M. Hasnain; A. A. Khurram; Nawazish A. Khan

J. Appl. Phys. 109, 023906 (2011) https://doi.org/10.1063/1.3531998

Abstract

View articletitled, Fluctuation induced conductivity in <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mrow><mo>(</mo><mrow><msub><mrow><mtext>Cu</mtext></mrow><mrow><mn>0.5</mn></mrow></msub><msub><mrow><mtext>Tl</mtext></mrow><mrow><mn>0.5</mn><mo>−</mo><mtext>x</mtext></mrow></msub><msub><mtext>K</mtext><mtext>x</mtext></msub></mrow><mo>)</mo></mrow><msub><mrow><mtext>Ba</mtext></mrow><mn>2</mn></msub><msub><mrow><mtext>Ca</mtext></mrow><mn>3</mn></msub><msub><mrow><mtext>Cu</mtext></mrow><mn>4</mn></msub><msub><mtext>O</mtext><mrow><mn>12</mn><mo>−</mo><mi>δ</mi></mrow></msub></mrow></math> superconductor

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Enhanced difference in switching fields for perpendicular magnetic spin valves with a composite ${[Co / Ni]}_{N} / TbCo$ reference layer

Jialin Liao; He He; Zongzhi Zhang; Bin Ma; Q. Y. Jin

J. Appl. Phys. 109, 023907 (2011) https://doi.org/10.1063/1.3536476

Abstract

View articletitled, Enhanced difference in switching fields for perpendicular magnetic spin valves with a composite <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mrow><mrow><mo>[</mo><mrow><mtext>Co</mtext><mo>/</mo><mtext>Ni</mtext></mrow><mo>]</mo></mrow></mrow><mtext>N</mtext></msub><mo>/</mo><mtext>TbCo</mtext></mrow></math> reference layer

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Growth and magnetism of low-temperature deposited Fe/Si(111) films as an intermediate layer for suppression of silicide formation

Wen-Ting Tu; Chih-Hsiung Wang; Ya-Yun Huang; Wen-Chin Lin

J. Appl. Phys. 109, 023908 (2011) https://doi.org/10.1063/1.3537832

Abstract

View articletitled, Growth and magnetism of low-temperature deposited Fe/Si(111) films as an intermediate layer for suppression of silicide formation

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Influence of film thickness on the physical properties of manganite heterojunctions

Weiwei Gao; Xuan Sun; Jing Wang; Dashan Shang; Baogen Shen; Jirong Sun

J. Appl. Phys. 109, 023909 (2011) https://doi.org/10.1063/1.3537916

Abstract

View articletitled, Influence of film thickness on the physical properties of manganite heterojunctions

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Thermal exchange bias field drift in field cooled ${Mn}_{83} {Ir}_{17} / {Co}_{70} {Fe}_{30}$ thin films after 10 keV He ion bombardment

Arno Ehresmann; Christoph Schmidt; Tanja Weis; Dieter Engel

J. Appl. Phys. 109, 023910 (2011) https://doi.org/10.1063/1.3532046

Abstract

View articletitled, Thermal exchange bias field drift in field cooled <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mrow><mtext>Mn</mtext></mrow><mrow><mn>83</mn></mrow></msub><msub><mrow><mtext>Ir</mtext></mrow><mrow><mn>17</mn></mrow></msub><mo>/</mo><msub><mrow><mtext>Co</mtext></mrow><mrow><mn>70</mn></mrow></msub><msub><mrow><mtext>Fe</mtext></mrow><mrow><mn>30</mn></mrow></msub></mrow></math> thin films after 10 keV He ion bombardment

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Precessing vortices and antivortices in ferromagnetic elements

A. Lyberatos; S. Komineas; N. Papanicolaou

J. Appl. Phys. 109, 023911 (2011) https://doi.org/10.1063/1.3534006

Abstract

View articletitled, Precessing vortices and antivortices in ferromagnetic elements

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Development of a compact, lightweight, mobile permanent magnet system based on high $T_{c}$ Gd-123 superconductors

Masaru Tomita; Yusuke Fukumoto; Kenji Suzuki; Atsushi Ishihara; Miryala Muralidhar

J. Appl. Phys. 109, 023912 (2011) https://doi.org/10.1063/1.3537827

Abstract

View articletitled, Development of a compact, lightweight, mobile permanent magnet system based on high <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mi>T</mi><mi>c</mi></msub></mrow></math> Gd-123 superconductors

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Numerical simulation of field-cooled and zero field-cooled processes for assembly of superparamagnetic nanoparticles with uniaxial anisotropy

N. A. Usov

J. Appl. Phys. 109, 023913 (2011) https://doi.org/10.1063/1.3536632

Abstract

View articletitled, Numerical simulation of field-cooled and zero field-cooled processes for assembly of superparamagnetic nanoparticles with uniaxial anisotropy

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Magnetoresistance in nanostructured Tb/Ti and Tb/Si multilayers

A. V. Svalov; G. V. Kurlyandskaya; V. O. Vas’kovskiy; A. N. Sorokin; D. Diercks

J. Appl. Phys. 109, 023914 (2011) https://doi.org/10.1063/1.3544043

Abstract

View articletitled, Magnetoresistance in nanostructured Tb/Ti and Tb/Si multilayers

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Stress-based control of magnetic nanowire domain walls in artificial multiferroic systems

J. Dean; M. T. Bryan; T. Schrefl; D. A. Allwood

J. Appl. Phys. 109, 023915 (2011) https://doi.org/10.1063/1.3532041

Abstract

View articletitled, Stress-based control of magnetic nanowire domain walls in artificial multiferroic systems

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Effect of the field-like spin torque on the switching current and switching speed of magnetic tunnel junction with perpendicularly magnetized free layers

Yan Zhou

J. Appl. Phys. 109, 023916 (2011) https://doi.org/10.1063/1.3530455

Abstract

View articletitled, Effect of the field-like spin torque on the switching current and switching speed of magnetic tunnel junction with perpendicularly magnetized free layers

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Dielectrics and Ferroelectricity

A systematic study of ${({NH}_{4})}_{2} S$ passivation (22%, 10%, 5%, or 1%) on the interface properties of the ${Al}_{2} O_{3} / {In}_{0.53} {Ga}_{0.47} As / InP$ system for $n$ -type and $p$ -type ${In}_{0.53} {Ga}_{0.47} As$ epitaxial layers

É. O’Connor; B. Brennan; V. Djara; K. Cherkaoui; S. Monaghan; S. B. Newcomb; R. Contreras; M. Milojevic; G. Hughes; M. E. Pemble; R. M. Wallace; P. K. Hurley

J. Appl. Phys. 109, 024101 (2011) https://doi.org/10.1063/1.3533959

Abstract

View articletitled, A systematic study of <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mrow><mrow><mo>(</mo><mrow><msub><mrow><mtext>NH</mtext></mrow><mn>4</mn></msub></mrow><mo>)</mo></mrow></mrow><mn>2</mn></msub><mtext>S</mtext></mrow></math> passivation (22%, 10%, 5%, or 1%) on the interface properties of the <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mrow><mtext>Al</mtext></mrow><mn>2</mn></msub><msub><mtext>O</mtext><mn>3</mn></msub><mo>/</mo><msub><mrow><mtext>In</mtext></mrow><mrow><mn>0.53</mn></mrow></msub><msub><mrow><mtext>Ga</mtext></mrow><mrow><mn>0.47</mn></mrow></msub><mtext>As</mtext><mo>/</mo><mtext>InP</mtext></mrow></math> system for <math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">n</mi></math>-type and <math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">p</mi></math>-type <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mrow><mtext>In</mtext></mrow><mrow><mn>0.53</mn></mrow></msub><msub><mrow><mtext>Ga</mtext></mrow><mrow><mn>0.47</mn></mrow></msub><mtext>As</mtext></mrow></math> epitaxial layers

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Anisotropic mechanism on distinct transition modes of tip-activated multipolorizaion switching in epitaxial ${BiFeO}_{3}$ films

Y. P. Shi; A. K. Soh; G. J. Weng

J. Appl. Phys. 109, 024102 (2011) https://doi.org/10.1063/1.3532001

Abstract

View articletitled, Anisotropic mechanism on distinct transition modes of tip-activated multipolorizaion switching in epitaxial <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mrow><mtext>BiFeO</mtext></mrow><mn>3</mn></msub></mrow></math> films

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Vanishing critical thickness in asymmetric ferroelectric tunnel junctions: First principle simulations

Meng-Qiu Cai; Yue Zheng; Pui-Wai Ma; C. H. Woo

J. Appl. Phys. 109, 024103 (2011) https://doi.org/10.1063/1.3532000

Abstract

View articletitled, Vanishing critical thickness in asymmetric ferroelectric tunnel junctions: First principle simulations

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Effects of copper filler sizes on the dielectric properties and the energy harvesting capability of nonpercolated polyurethane composites

C. Putson; L. Lebrun; D. Guyomar; N. Muensit; P.-J. Cottinet; L. Seveyrat; B. Guiffard

J. Appl. Phys. 109, 024104 (2011) https://doi.org/10.1063/1.3534000

Abstract

View articletitled, Effects of copper filler sizes on the dielectric properties and the energy harvesting capability of nonpercolated polyurethane composites

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Structural, electrical, and strain properties of stoichiometric $1 - x - y ({Bi}_{0.5} {Na}_{0.5}) {TiO}_{3} - x ({Bi}_{0.5} K_{0.5} {TiO}_{3}) - y ({Na}_{0.5} K_{0.5}) {NbO}_{3}$ solid solutions

Amrita Singh; Ratnamala Chatterjee

J. Appl. Phys. 109, 024105 (2011) https://doi.org/10.1063/1.3536634

Abstract

View articletitled, Structural, electrical, and strain properties of stoichiometric <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mn>1</mn><mo>−</mo><mtext>x</mtext><mo>−</mo><mtext>y</mtext><mrow><mo>(</mo><mrow><msub><mrow><mtext>Bi</mtext></mrow><mrow><mn>0.5</mn></mrow></msub><msub><mrow><mtext>Na</mtext></mrow><mrow><mn>0.5</mn></mrow></msub></mrow><mo>)</mo></mrow><msub><mrow><mtext>TiO</mtext></mrow><mn>3</mn></msub><mo>−</mo><mtext>x</mtext><mrow><mo>(</mo><mrow><msub><mrow><mtext>Bi</mtext></mrow><mrow><mn>0.5</mn></mrow></msub><msub><mtext>K</mtext><mrow><mn>0.5</mn></mrow></msub><msub><mrow><mtext>TiO</mtext></mrow><mn>3</mn></msub></mrow><mo>)</mo></mrow><mo>−</mo><mtext>y</mtext><mrow><mo>(</mo><mrow><msub><mrow><mtext>Na</mtext></mrow><mrow><mn>0.5</mn></mrow></msub><msub><mtext>K</mtext><mrow><mn>0.5</mn></mrow></msub></mrow><mo>)</mo></mrow><msub><mrow><mtext>NbO</mtext></mrow><mn>3</mn></msub></mrow></math> solid solutions

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An electrode-free method of characterizing the microwave dielectric properties of high-permittivity thin films

V. Bovtun; V. Pashkov; M. Kempa; S. Kamba; A. Eremenko; V. Molchanov; Y. Poplavko; Y. Yakymenko; J. H. Lee; D. G. Schlom

J. Appl. Phys. 109, 024106 (2011) https://doi.org/10.1063/1.3537835

Abstract

View articletitled, An electrode-free method of characterizing the microwave dielectric properties of high-permittivity thin films

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Frequency-dependent electrical properties of ferroelectric ${BaTi}_{2} O_{5}$ single crystal

Nahum Masó; XinYan Yue; Takashi Goto; Anthony R. West

J. Appl. Phys. 109, 024107 (2011) https://doi.org/10.1063/1.3536535

Abstract

View articletitled, Frequency-dependent electrical properties of ferroelectric <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mrow><mtext>BaTi</mtext></mrow><mn>2</mn></msub><msub><mtext>O</mtext><mn>5</mn></msub></mrow></math> single crystal

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Nanoscale Science and Design

Increase in photocurrent by optical transitions via intermediate quantum states in direct-doped InAs/GaNAs strain-compensated quantum dot solar cell

Yoshitaka Okada; Takayuki Morioka; Katsuhisa Yoshida; Ryuji Oshima; Yasushi Shoji; Tomoya Inoue; Takashi Kita

J. Appl. Phys. 109, 024301 (2011) https://doi.org/10.1063/1.3533423

Abstract

View articletitled, Increase in photocurrent by optical transitions via intermediate quantum states in direct-doped InAs/GaNAs strain-compensated quantum dot solar cell

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Scanning thermal microscopy of individual silicon nanowires

Etienne Puyoo; Stéphane Grauby; Jean-Michel Rampnoux; Emmanuelle Rouvière; Stefan Dilhaire

J. Appl. Phys. 109, 024302 (2011) https://doi.org/10.1063/1.3524223

Abstract

View articletitled, Scanning thermal microscopy of individual silicon nanowires

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Individual transport of electrons through a chemisorbed Au nanodot in Coulomb blockade electron shuttles

Yasuo Azuma; Norihiro Kobayashi; Simon Chorley; Jonathan Prance; Charles G. Smith; Daisuke Tanaka; Masayuki Kanehara; Toshiharu Teranishi; Yutaka Majima

J. Appl. Phys. 109, 024303 (2011) https://doi.org/10.1063/1.3525833

Abstract

View articletitled, Individual transport of electrons through a chemisorbed Au nanodot in Coulomb blockade electron shuttles

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Spin transport through a quantum network: Effects of Rashba spin-orbit interaction and Aharonov–Bohm flux

Moumita Dey; Santanu K. Maiti; S. N. Karmakar

J. Appl. Phys. 109, 024304 (2011) https://doi.org/10.1063/1.3532002

Abstract

View articletitled, Spin transport through a quantum network: Effects of Rashba spin-orbit interaction and Aharonov–Bohm flux

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Effects of $p H$ on heat transfer nanofluids containing ${ZrO}_{2}$ and ${TiO}_{2}$ nanoparticles

Carine Tchamakam Wamkam; Michael Kwabena Opoku; Haiping Hong; Pauline Smith

J. Appl. Phys. 109, 024305 (2011) https://doi.org/10.1063/1.3532003

Abstract

View articletitled, Effects of <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi>p</mi><mtext>H</mtext></mrow></math> on heat transfer nanofluids containing <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mrow><mtext>ZrO</mtext></mrow><mn>2</mn></msub></mrow></math> and <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mrow><mtext>TiO</mtext></mrow><mn>2</mn></msub></mrow></math> nanoparticles

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Length dependence scaling exponent of inverted frustum spring constant

K. K. Mon

J. Appl. Phys. 109, 024306 (2011) https://doi.org/10.1063/1.3537735

Abstract

View articletitled, Length dependence scaling exponent of inverted frustum spring constant

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Structure evolution of Zn cluster on graphene for ZnO nanostructure growth

J. Y. Guo; C. X. Xu; B. X. Gu; F. Y. Sheng

J. Appl. Phys. 109, 024307 (2011) https://doi.org/10.1063/1.3537828

Abstract

View articletitled, Structure evolution of Zn cluster on graphene for ZnO nanostructure growth

Supplementary Material

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Radiative versus nonradiative optical processes in PbS nanocrystals

N. O. Dantas; P. M. N. de Paula; R. S. Silva; V. López-Richard; G. E. Marques

J. Appl. Phys. 109, 024308 (2011) https://doi.org/10.1063/1.3543972

Abstract

View articletitled, Radiative versus nonradiative optical processes in PbS nanocrystals

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Electrical potential modulation of dynamic film properties of aqueous surfactant solutions through a nanogap

Guoxin Xie; Jianbin Luo; Shuhai Liu; Dan Guo

J. Appl. Phys. 109, 024309 (2011) https://doi.org/10.1063/1.3544203

Abstract

View articletitled, Electrical potential modulation of dynamic film properties of aqueous surfactant solutions through a nanogap

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Thermal frequency noise in dynamic scanning force microscopy

J. Colchero; M. Cuenca; J. F. González Martínez; J. Abad; B. Pérez García; E. Palacios-Lidón; J. Abellán

J. Appl. Phys. 109, 024310 (2011) https://doi.org/10.1063/1.3533769

Abstract

View articletitled, Thermal frequency noise in dynamic scanning force microscopy

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Nanoscale probing of electronic band gap and topography of ${VO}_{2}$ thin film surfaces by scanning tunneling microscopy

W. Yin; S. Wolf; C. Ko; S. Ramanathan; P. Reinke

J. Appl. Phys. 109, 024311 (2011) https://doi.org/10.1063/1.3528167

Abstract

View articletitled, Nanoscale probing of electronic band gap and topography of <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mrow><mtext>VO</mtext></mrow><mn>2</mn></msub></mrow></math> thin film surfaces by scanning tunneling microscopy

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Ultraviolet superfluorescence from oxygen vacancies in ${WO}_{3 - x}$ nanowires at room temperature

Jian Yi Luo; Ning Sheng Xu; Fu Li Zhao; Shao Zhi Deng; Yu Ting Tao

J. Appl. Phys. 109, 024312 (2011) https://doi.org/10.1063/1.3514078

Abstract

View articletitled, Ultraviolet superfluorescence from oxygen vacancies in <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mrow><mtext>WO</mtext></mrow><mrow><mn>3</mn><mo>−</mo><mtext>x</mtext></mrow></msub></mrow></math> nanowires at room temperature

Supplementary Material

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Device Physics

The role of electron-electron scattering in spin transport

Akashdeep Kamra; Bahniman Ghosh

J. Appl. Phys. 109, 024501 (2011) https://doi.org/10.1063/1.3532042

Abstract

View articletitled, The role of electron-electron scattering in spin transport

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Aging- and annealing-induced variations in $Nb / Al - {AlO}_{x} / Nb$ tunnel junction properties

Alexey B. Pavolotsky; Dimitar Dochev; Victor Belitsky

J. Appl. Phys. 109, 024502 (2011) https://doi.org/10.1063/1.3532040

Abstract

View articletitled, Aging- and annealing-induced variations in <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mtext>Nb</mtext><mo>/</mo><mtext>Al</mtext><mo>–</mo><msub><mrow><mtext>AlO</mtext></mrow><mi>x</mi></msub><mo>/</mo><mtext>Nb</mtext></mrow></math> tunnel junction properties

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Temperature effect on the submicron AlGaN/GaN Gunn diodes for terahertz frequency

Lin’an Yang; Wei Mao; Qingyang Yao; Qi Liu; Xuhu Zhang; Jincheng Zhang; Yue Hao

J. Appl. Phys. 109, 024503 (2011) https://doi.org/10.1063/1.3533984

Abstract

View articletitled, Temperature effect on the submicron AlGaN/GaN Gunn diodes for terahertz frequency

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Ambipolar charge transport in microcrystalline silicon thin-film transistors

Dietmar Knipp; Kah-Yoong Chan; Aad Gordijn; M. Marinkovic; Helmut Stiebig

J. Appl. Phys. 109, 024504 (2011) https://doi.org/10.1063/1.3531990

Abstract

View articletitled, Ambipolar charge transport in microcrystalline silicon thin-film transistors

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Enhanced magnetoelectric effect in a stress-biased lead magnesium niobate-lead titanate single crystal/Terfenol-D alloy magnetoelectric sensor

K. H. Lam; C. Y. Lo; J. Y. Dai; H. L. W. Chan; H. S. Luo

J. Appl. Phys. 109, 024505 (2011) https://doi.org/10.1063/1.3536636

Abstract

View articletitled, Enhanced magnetoelectric effect in a stress-biased lead magnesium niobate-lead titanate single crystal/Terfenol-D alloy magnetoelectric sensor

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Vacuum fluorescent displays utilizing ZnO nanoparticles

Charles H. Aaronson; Hiro Amekura (雨倉宏); Yoshitaka Sato (佐藤義孝); Naoki Kishimoto (岸本直樹)

J. Appl. Phys. 109, 024506 (2011) https://doi.org/10.1063/1.3536631

Abstract

View articletitled, Vacuum fluorescent displays utilizing ZnO nanoparticles

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Investigation of electrical shading effects in back-contacted back-junction silicon solar cells using the two-dimensional charge collection probability and the reciprocity theorem

C. Reichel; F. Granek; M. Hermle; S. W. Glunz

J. Appl. Phys. 109, 024507 (2011) https://doi.org/10.1063/1.3524506

Abstract

View articletitled, Investigation of electrical shading effects in back-contacted back-junction silicon solar cells using the two-dimensional charge collection probability and the reciprocity theorem

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Surface modification of a ferroelectric polymer insulator for low-voltage readable nonvolatile memory in an organic field-effect transistor

Won-Ho Kim; Jin-Hyuk Bae; Min-Hoi Kim; Chang-Min Keum; Jaehoon Park; Sin-Doo Lee

J. Appl. Phys. 109, 024508 (2011) https://doi.org/10.1063/1.3544308

Abstract

View articletitled, Surface modification of a ferroelectric polymer insulator for low-voltage readable nonvolatile memory in an organic field-effect transistor

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Influence of transferred-electron effect on drain-current characteristics of AlGaN/GaN heterostructure field-effect transistors

Maziar Moradi; Pouya Valizadeh

J. Appl. Phys. 109, 024509 (2011) https://doi.org/10.1063/1.3533941

Abstract

View articletitled, Influence of transferred-electron effect on drain-current characteristics of AlGaN/GaN heterostructure field-effect transistors

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Interdisciplinary and General Physics

Optical recording mechanisms in undoped titanosillenite crystals

Vladimir Jerez; Ivan de Oliveira; Jaime Frejlich

J. Appl. Phys. 109, 024901 (2011) https://doi.org/10.1063/1.3533421

Abstract

View articletitled, Optical recording mechanisms in undoped titanosillenite crystals

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Defect modification and energy extraction in a one-dimensional terahertz photonic crystal

Sen Liang; Hai-Ying Liu; Qiao-Feng Dai; Li-Jun Wu; Sheng Lan; Achanta Venu Gopal

J. Appl. Phys. 109, 024902 (2011) https://doi.org/10.1063/1.3537824

Abstract

View articletitled, Defect modification and energy extraction in a one-dimensional terahertz photonic crystal

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Growth and structure of an ultrathin tin oxide film on Rh(111)

J. Yuhara; D. Tajima; T. Matsui; K. Tatsumi; S. Muto; M. Schmid; P. Varga

J. Appl. Phys. 109, 024903 (2011) https://doi.org/10.1063/1.3537871

Abstract

View articletitled, Growth and structure of an ultrathin tin oxide film on Rh(111)

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Magnetic properties of nanocrystallized nickel films on gold substrate deposited by cathodic voltammetry: Scan rate induced effects

Lény Nzoghé-Mendome; Jean Ebothé; Michael Molinari

J. Appl. Phys. 109, 024904 (2011) https://doi.org/10.1063/1.3524279

Abstract

View articletitled, Magnetic properties of nanocrystallized nickel films on gold substrate deposited by cathodic voltammetry: Scan rate induced effects

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COMMUNICATIONS

Comment on “Terrestrial gamma-ray flashes caused by neutron bursts above thunderclouds” [J. Appl. Phys. 105, 083301 (2009)]

David M. Smith

J. Appl. Phys. 109, 026101 (2011) https://doi.org/10.1063/1.3533404

Abstract

View articletitled, Comment on “Terrestrial gamma-ray flashes caused by neutron bursts above thunderclouds” [J. Appl. Phys. 105, 083301 (2009)]

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Comment on “Nanohardness of high purity Cu single crystals” [J. Appl. Phys. 107, 043510 (2010)]

L. M. Brown

J. Appl. Phys. 109, 026102 (2011) https://doi.org/10.1063/1.3533405

Abstract

View articletitled, Comment on “Nanohardness of high purity Cu single crystals” [J. Appl. Phys. 107, 043510 (2010)]

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Contactless electroreflectance of polar and nonpolar GaN/AlGaN quantum wells

R. Kudrawiec; M. Gladysiewicz; A. Dussaigne; H. Teisseyre; M. Boćkowski; I. Grzegory; T. Suski; J. Misiewicz; N. Grandjean

J. Appl. Phys. 109, 026103 (2011) https://doi.org/10.1063/1.3533417

Abstract

View articletitled, Contactless electroreflectance of polar and nonpolar GaN/AlGaN quantum wells

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Ambient wind energy harvesting using cross-flow fluttering

Shuguang Li; Jianping Yuan; Hod Lipson

J. Appl. Phys. 109, 026104 (2011) https://doi.org/10.1063/1.3525045

Abstract

View articletitled, Ambient wind energy harvesting using cross-flow fluttering

Supplementary Material

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ERRATA

Erratum: “Mechanism of charge transport in poly(2,5-dimethoxyaniline)” [J. Appl. Phys. 107, 113711 (2010)]

Rajiv K. Singh; Amit Kumar; Ramadhar Singh

J. Appl. Phys. 109, 029901 (2011) https://doi.org/10.1063/1.3533916

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View articletitled, Erratum: “Mechanism of charge transport in poly(2,5-dimethoxyaniline)” [J. Appl. Phys. 107, 113711 (2010)]

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Publisher’s Note: “X-ray photoelectron spectroscopy study of the chemical interaction at the Pd/SiC interface” [J. Appl. Phys. 108, 093702 (2010)]

Y. Zhang (张宇锋); G. Gajjala; T. Hofmann; L. Weinhardt; M. Bär; C. Heske; M. Seelmann-Eggebert; P. Meisen

J. Appl. Phys. 109, 029902 (2011) https://doi.org/10.1063/1.3532951

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View articletitled, Publisher’s Note: “X-ray photoelectron spectroscopy study of the chemical interaction at the Pd/SiC interface” [J. Appl. Phys. 108, 093702 (2010)]

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Publisher’s Note: “Application of electron backscatter diffraction to the study on orientation distribution of intermetallic compounds at heterogeneous interfaces (Sn/Ag and Sn/Cu)” [J. Appl. Phys. 108, 103518 (2010)]

H. F. Zou; Z. F. Zhang

J. Appl. Phys. 109, 029903 (2011) https://doi.org/10.1063/1.3532093

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View articletitled, Publisher’s Note: “Application of electron backscatter diffraction to the study on orientation distribution of intermetallic compounds at heterogeneous interfaces (Sn/Ag and Sn/Cu)” [J. Appl. Phys. 108, 103518 (2010)]

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