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Issues
15 July 2010
ISSN 0021-8979
EISSN 1089-7550
In this Issue
ARTICLES
Lasers, Optics, and Optoelectronics
Influence of aluminum ions on fluorescent spectra and upconversion in codoped and glass system
J. Appl. Phys. 108, 023102 (2010)
https://doi.org/10.1063/1.3464257
Direct and indirect band gap room temperature electroluminescence of Ge diodes
M. de Kersauson; R. Jakomin; M. El Kurdi; G. Beaudoin; N. Zerounian; F. Aniel; S. Sauvage; I. Sagnes; P. Boucaud
J. Appl. Phys. 108, 023105 (2010)
https://doi.org/10.1063/1.3462400
Experimental aspects of multiharmonic-order coherent diffractive imaging
J. Appl. Phys. 108, 023106 (2010)
https://doi.org/10.1063/1.3462438
A three-beam path photonic crystal fiber modal interferometer and its sensing applications
J. Appl. Phys. 108, 023107 (2010)
https://doi.org/10.1063/1.3452376
Growth and anisotropic thermal properties of biaxial crystal
J. Appl. Phys. 108, 023108 (2010)
https://doi.org/10.1063/1.3460645
Analyses of the ultraviolet spectra of in and in
J. Appl. Phys. 108, 023109 (2010)
https://doi.org/10.1063/1.3465615
Enhancement of white light emission from novel phosphors with ion codoping
J. Appl. Phys. 108, 023111 (2010)
https://doi.org/10.1063/1.3460806
Plasmas and Electrical Discharges
Comparisons of kinetic ablation models for the capillary discharge
J. Appl. Phys. 108, 023301 (2010)
https://doi.org/10.1063/1.3465316
Structural, Mechanical, Thermodynamic, and Optical Properties of Condensed Matter
Superelastic response of [111] and [101] oriented NiTi micropillars
J. Appl. Phys. 108, 023501 (2010)
https://doi.org/10.1063/1.3445262
On the microstructure of Si coimplanted with and ions at moderate energies
J. Appl. Phys. 108, 023502 (2010)
https://doi.org/10.1063/1.3459884
Precipitation of heterogeneous nanostructures: Metal nanoparticles and dielectric nanocrystallites
J. Appl. Phys. 108, 023503 (2010)
https://doi.org/10.1063/1.3457790
Compression-compression fatigue of metallic glass foam
J. Appl. Phys. 108, 023505 (2010)
https://doi.org/10.1063/1.3457221
Amorphous InSb: Longer bonds yet higher density
M. Krbal; A. V. Kolobov; B. Hyot; B. André; P. Fons; R. E. Simpson; T. Uruga; H. Tanida; J. Tominaga
J. Appl. Phys. 108, 023506 (2010)
https://doi.org/10.1063/1.3436592
Superhard and superconducting structures of
J. Appl. Phys. 108, 023507 (2010)
https://doi.org/10.1063/1.3452374
Thermally induced surface instabilities in polymer light emitting diodes
J. Appl. Phys. 108, 023510 (2010)
https://doi.org/10.1063/1.3448035
Ultrafast observation of shocked states in a precompressed material
J. Appl. Phys. 108, 023511 (2010)
https://doi.org/10.1063/1.3460801
Directed growth characteristics and optoelectronic properties of Eu-doped ZnO nanorods and urchins
J. Appl. Phys. 108, 023512 (2010)
https://doi.org/10.1063/1.3462396
Understanding of large auxetic properties of iron-gallium and iron-aluminum alloys
J. Appl. Phys. 108, 023513 (2010)
https://doi.org/10.1063/1.3445269
On the atomic structure of Zr–Ni and Zr–Ni–Al metallic glasses
J. Appl. Phys. 108, 023514 (2010)
https://doi.org/10.1063/1.3446131
Hole carrier concentration and photoluminescence in magnesium doped InGaN and GaN grown on sapphire and GaN misoriented substrates
T. Suski; G. Staszczak; S. Grzanka; R. Czernecki; E. Litwin-Staszewska; R. Piotrzkowski; L. H. Dmowski; A. Khachapuridze; M. Kryśko; P. Perlin; I. Grzegory
J. Appl. Phys. 108, 023516 (2010)
https://doi.org/10.1063/1.3466768
Effects of deposition temperature on the effectiveness of hydrogen doping in Ga-doped ZnO thin films
J. Appl. Phys. 108, 023520 (2010)
https://doi.org/10.1063/1.3456527
Island shape controls magic-size effect for heteroepitaxial diffusion
J. Appl. Phys. 108, 023521 (2010)
https://doi.org/10.1063/1.3455848
Electronic Structure and Transport
Gate-field dependent photosensitivity of soluble 1,2,4,5-tetra(-hexyl-terthiophenyl-5-vinyl)-benzene based organic thin film transistors
Mi Yeon Cho; Kihyun Kim; Su Jin Kim; Seong Gi Jo; Kyung Hwan Kim; Ki Hwa Jung; Dong Hoon Choi; Sangsig Kim; Jinsoo Joo
J. Appl. Phys. 108, 023703 (2010)
https://doi.org/10.1063/1.3456498
Transport properties and microstructures of polycrystalline thin films
J. Appl. Phys. 108, 023704 (2010)
https://doi.org/10.1063/1.3452375
Deep levels induced by reactive ion etching in n- and p-type 4H–SiC
J. Appl. Phys. 108, 023706 (2010)
https://doi.org/10.1063/1.3460636
Effect of substrate-induced strain in the transport properties of AlGaN/GaN heterostructures
J. Appl. Phys. 108, 023707 (2010)
https://doi.org/10.1063/1.3463150
Scanning tunneling spectroscopy and Kelvin probe force microscopy investigation of Fermi energy level pinning mechanism on InAs and InGaAs clean surfaces
Wilhelm Melitz; Jian Shen; Sangyeob Lee; Joon Sung Lee; Andrew C. Kummel; Ravi Droopad; Edward T. Yu
J. Appl. Phys. 108, 023711 (2010)
https://doi.org/10.1063/1.3462440
Magnetism and Superconductivity
Spin wave resonance excitation in ferromagnetic films using planar waveguide structures
J. Appl. Phys. 108, 023907 (2010)
https://doi.org/10.1063/1.3435318
Ferromagnetic resonance studies of exchange coupled ultrathin Py/Cr/Py trilayers
J. Appl. Phys. 108, 023910 (2010)
https://doi.org/10.1063/1.3409020
Enhancement of perpendicular coercivity for CoPt top layer in CoPt/AlN multilayer structure
J. Appl. Phys. 108, 023912 (2010)
https://doi.org/10.1063/1.3462428
Multiseeded melt growth of bulk Y–Ba–Cu–O using thin film seeds
T. Y. Li; C. L. Wang; L. J. Sun; S. B. Yan; L. Cheng; X. Yao; J. Xiong; B. W. Tao; J. Q. Feng; X. Y. Xu; C. S. Li; D. A. Cardwell
J. Appl. Phys. 108, 023914 (2010)
https://doi.org/10.1063/1.3465301
Anomalous thermal expansion and magnetic properties of compounds
J. Appl. Phys. 108, 023915 (2010)
https://doi.org/10.1063/1.3456444
Dielectrics and Ferroelectricity
Optimal configuration of microstructure in ferroelectric materials by stochastic optimization
J. Appl. Phys. 108, 024101 (2010)
https://doi.org/10.1063/1.3462450
Effect of Ti incorporation on the interfacial and optical properties of HfTiO thin films
J. Appl. Phys. 108, 024102 (2010)
https://doi.org/10.1063/1.3462467
Growth and electric-elastic properties of single crystal
J. Appl. Phys. 108, 024103 (2010)
https://doi.org/10.1063/1.3446042
Determination of band offsets, chemical bonding, and microstructure of the system
J. Appl. Phys. 108, 024105 (2010)
https://doi.org/10.1063/1.3427554
Analysis of ferroelectric polarization switching in films using nucleation limited switching model
J. Appl. Phys. 108, 024108 (2010)
https://doi.org/10.1063/1.3457228
Activated impurity states in the incommensurate phase of ferroelectric semiconductor
J. Appl. Phys. 108, 024111 (2010)
https://doi.org/10.1063/1.3466764
Nanoscale Science and Design
Maskless fabrication of large scale Si nanohole array via laser annealed metal nanoparticles catalytic etching for photovoltaic application
Fei Wang; Hong Yu Yu; Xincai Wang; Junshuai Li; Xiaowei Sun; Mingfei Yang; She Mein Wong; Hongyu Zheng
J. Appl. Phys. 108, 024301 (2010)
https://doi.org/10.1063/1.3462397
Electrical field induced direct-to-indirect bandgap transition in ZnO nanowires
J. Appl. Phys. 108, 024302 (2010)
https://doi.org/10.1063/1.3462407
Piezoelectric thin-film superlattices without using piezoelectric materials
J. Appl. Phys. 108, 024304 (2010)
https://doi.org/10.1063/1.3443404
Effect of electric field on CuO nanoneedle growth during thermal oxidation and its growth mechanism
J. Appl. Phys. 108, 024308 (2010)
https://doi.org/10.1063/1.3460635
Hard x-ray photoemission spectroscopic investigation of palladium catalysts immobilized on a GaAs(001) surface
M. Shimoda; T. Konishi; K. Tateishi; T. Toujyou; S. Tsukamoto; N. Nishiwaki; M. Arisawa; N. Hoshiya; S. Shuto; N. Isomura; H. Yokota; Y. Furukawa; K. Iizuka; T. Ogiwara; Y. Isozaki; Y. Yamashita; H. Yoshikawa; S. Ueda; K. Kobayashi
J. Appl. Phys. 108, 024309 (2010)
https://doi.org/10.1063/1.3456507
Real-time fracture detection of individual boron nitride nanotubes in severe cyclic deformation processes
J. Appl. Phys. 108, 024314 (2010)
https://doi.org/10.1063/1.3456083
Some aspects of emission variation in InAs quantum dots coupled with symmetric quantum wells
J. Appl. Phys. 108, 024316 (2010)
https://doi.org/10.1063/1.3455851
Impact of ion-implantation-induced band gap engineering on the temperature-dependent photoluminescence properties of InAs/InP quantum dashes
M. H. Hadj Alouane; B. Ilahi; H. Maaref; B. Salem; V. Aimez; D. Morris; A. Turala; P. Regreny; M. Gendry
J. Appl. Phys. 108, 024317 (2010)
https://doi.org/10.1063/1.3460646
Device Physics
Demonstration of a Meissner-effect transition edge sensor
J. Appl. Phys. 108, 024505 (2010)
https://doi.org/10.1063/1.3456539
Effect of forward current stress on low frequency noise in 4H–SiC junctions
J. Appl. Phys. 108, 024508 (2010)
https://doi.org/10.1063/1.3457789
Multitone harmonic-balance simulations of an x-ray transition-edge sensor characterized at BESSY II
J. Appl. Phys. 108, 024509 (2010)
https://doi.org/10.1063/1.3466795
Applied Biophysics
Interdisciplinary and General Physics
Outgassing and degradation of polyimide induced by swift heavy ion irradiation at cryogenic temperature
J. Appl. Phys. 108, 024901 (2010)
https://doi.org/10.1063/1.3457846
A low-cost millimeter wave interferometer for remote vibration sensing
J. Appl. Phys. 108, 024902 (2010)
https://doi.org/10.1063/1.3452347
Experiments and simulation on diffusion and activation of codoped with arsenic and phosphorous germanium
J. Appl. Phys. 108, 024903 (2010)
https://doi.org/10.1063/1.3456998
Conduction noise absorption by ITO thin films attached to microstrip line utilizing Ohmic loss
J. Appl. Phys. 108, 024904 (2010)
https://doi.org/10.1063/1.3456515
Chemical structure of vanadium-based contact formation on n-AlN
S. Pookpanratana; R. France; M. Blum; A. Bell; M. Bär; L. Weinhardt; Y. Zhang; T. Hofmann; O. Fuchs; W. Yang; J. D. Denlinger; S. Mulcahy; T. D. Moustakas; C. Heske
J. Appl. Phys. 108, 024906 (2010)
https://doi.org/10.1063/1.3456060
Design and fabrication of microcavity-array superhydrophobic surfaces
J. Appl. Phys. 108, 024908 (2010)
https://doi.org/10.1063/1.3466979
COMMUNICATIONS
Compact three-dimensional terahertz resonators based on periodically corrugated metallic slit waveguides
J. Appl. Phys. 108, 026102 (2010)
https://doi.org/10.1063/1.3462382
Terahertz generation based on an optically pumped ballistic electron wave swing device
J. Appl. Phys. 108, 026103 (2010)
https://doi.org/10.1063/1.3462439
A stress relaxation mechanism through buckling-induced dislocations in thin films
J. Appl. Phys. 108, 026104 (2010)
https://doi.org/10.1063/1.3457225
ERRATA
Publisher's Note: “Modeling of radiative properties of Sn plasmas for extreme-ultraviolet source” [J. Appl. Phys. 107, 113303 (2010)]
Akira Sasaki; Atsushi Sunahara; Hiroyuki Furukawa; Katsunobu Nishihara; Shinsuke Fujioka; Takeshi Nishikawa; Fumihiro Koike; Hayato Ohashi; Hajime Tanuma
J. Appl. Phys. 108, 029902 (2010)
https://doi.org/10.1063/1.3464541
A step-by-step guide to perform x-ray photoelectron spectroscopy
Grzegorz Greczynski, Lars Hultman
Piezoelectric thin films and their applications in MEMS: A review
Jinpeng Liu, Hua Tan, et al.
Decoding diffraction and spectroscopy data with machine learning: A tutorial
D. Vizoso, R. Dingreville