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Issues
1 July 2010
ISSN 0021-8979
EISSN 1089-7550
In this Issue
APPLIED PHYSICS REVIEWS—FOCUSED REVIEW
ARTICLES
Lasers, Optics, and Optoelectronics
Radiation efficiency of heavily doped bulk -InP semiconductor
J. Appl. Phys. 108, 013101 (2010)
https://doi.org/10.1063/1.3455874
Silicon based microfluidic cell for terahertz frequencies
J. Appl. Phys. 108, 013102 (2010)
https://doi.org/10.1063/1.3456175
Extrinsic contributions to photocurrents from quantum-wells
J. Appl. Phys. 108, 013103 (2010)
https://doi.org/10.1063/1.3457148
Intersubband absorption in modulation doped heterostructures
J. Appl. Phys. 108, 013104 (2010)
https://doi.org/10.1063/1.3436595
Multiple-pulse laser dynamic forming of metallic thin films for microscale three dimensional shapes
J. Appl. Phys. 108, 013107 (2010)
https://doi.org/10.1063/1.3457869
Direct measurement of micromotion speed in a linear quadrupole trap
J. Appl. Phys. 108, 013108 (2010)
https://doi.org/10.1063/1.3457904
Microwave and plasma interaction in a rectangular waveguide: Effect of ponderomotive force
J. Appl. Phys. 108, 013109 (2010)
https://doi.org/10.1063/1.3452335
Plasmas and Electrical Discharges
Electric probe investigations of microwave generated, atmospheric pressure, plasma jets
J. Appl. Phys. 108, 013301 (2010)
https://doi.org/10.1063/1.3448034
Structural, Mechanical, Thermodynamic, and Optical Properties of Condensed Matter
Oxygen deficiency defects in amorphous
T. V. Perevalov; O. E. Tereshenko; V. A. Gritsenko; V. A. Pustovarov; A. P. Yelisseyev; Chanjin Park; Jeong Hee Han; Choongman Lee
J. Appl. Phys. 108, 013501 (2010)
https://doi.org/10.1063/1.3455843
Carrier recombination process and magneto-photoluminescence in layers
J. Appl. Phys. 108, 013502 (2010)
https://doi.org/10.1063/1.3455854
Combined effects of Ga, N, and Al codoping in solution grown 3C–SiC
J. W. Sun; G. Zoulis; J. C. Lorenzzi; N. Jegenyes; H. Peyre; S. Juillaguet; V. Souliere; F. Milesi; G. Ferro; J. Camassel
J. Appl. Phys. 108, 013503 (2010)
https://doi.org/10.1063/1.3455999
Mechanical behavior of twinned SiC nanowires under combined tension-torsion and compression-torsion strain
J. Appl. Phys. 108, 013504 (2010)
https://doi.org/10.1063/1.3456002
Photoluminescence enhancement and high gain amplification of waveguide
J. Appl. Phys. 108, 013506 (2010)
https://doi.org/10.1063/1.3446822
Infrared study of the absorption edge of -InN films grown on GaN/MgO structures
J. Appl. Phys. 108, 013507 (2010)
https://doi.org/10.1063/1.3456171
Variable percolation threshold of composites with fiber fillers under compression
J. Appl. Phys. 108, 013509 (2010)
https://doi.org/10.1063/1.3457351
LuAG:Ce fibers for high energy calorimetry
C. Dujardin; C. Mancini; D. Amans; G. Ledoux; D. Abler; E. Auffray; P. Lecoq; D. Perrodin; A. Petrosyan; K. L. Ovanesyan
J. Appl. Phys. 108, 013510 (2010)
https://doi.org/10.1063/1.3452358
Annealing induced extended defects in as-grown and ion-implanted 4H–SiC epitaxial layers
J. Appl. Phys. 108, 013511 (2010)
https://doi.org/10.1063/1.3457840
Shape profile of acoustic radiation-induced static displacement pulses in solids
J. Appl. Phys. 108, 013512 (2010)
https://doi.org/10.1063/1.3457850
Insights into solid phase epitaxy of ultrahighly doped silicon
J. Appl. Phys. 108, 013513 (2010)
https://doi.org/10.1063/1.3408556
Elastic constants and anisotropic internal frictions of decagonal single quasicrystal at low temperatures
J. Appl. Phys. 108, 013514 (2010)
https://doi.org/10.1063/1.3457898
Elastoplastic analysis of process induced residual stresses in thermally sprayed coatings
J. Appl. Phys. 108, 013517 (2010)
https://doi.org/10.1063/1.3374710
Transmission electron microscopy investigations of epitaxial graphene on C-terminated 4H–SiC
J. Appl. Phys. 108, 013518 (2010)
https://doi.org/10.1063/1.3445776
Self-clustering phenomenon of epitaxial FeSi nanoislands on Si(001)
J. Appl. Phys. 108, 013519 (2010)
https://doi.org/10.1063/1.3452359
Magneto-phonon polaritons of antiferromagnetic/ion-crystal superlattices
J. Appl. Phys. 108, 013520 (2010)
https://doi.org/10.1063/1.3455860
Large-scale statistical analysis of early failures in Cu electromigration, Part I: Dominating mechanisms
J. Appl. Phys. 108, 013523 (2010)
https://doi.org/10.1063/1.3374701
Catalytic effect and nucleation stability of Au on GaAs(111)B surface
J. Appl. Phys. 108, 013526 (2010)
https://doi.org/10.1063/1.3456094
Atomistic modeling of the tensile behavior of monoclinic bicrystal
J. Appl. Phys. 108, 013527 (2010)
https://doi.org/10.1063/1.3452340
Heterostructure growth of a single-crystal hexagonal AlN (0001) layer on cubic diamond (111) surface
J. Appl. Phys. 108, 013528 (2010)
https://doi.org/10.1063/1.3452362
Electronic Structure and Transport
Polarization screening and induced carrier density at the interface of overlayer on (001)
J. Appl. Phys. 108, 013701 (2010)
https://doi.org/10.1063/1.3455877
Comparative NMR study of copper-based intermetallics with ZrCuSiAs-type structure
J. Appl. Phys. 108, 013704 (2010)
https://doi.org/10.1063/1.3457222
Advanced analytical model for the effective recombination velocity of locally contacted surfaces
J. Appl. Phys. 108, 013705 (2010)
https://doi.org/10.1063/1.3437126
Electron and hole mobility reduction and Hall factor in phosphorus-compensated -type silicon
J. Appl. Phys. 108, 013706 (2010)
https://doi.org/10.1063/1.3456076
Synthesis and thermoelectric properties of nanorods
J. Appl. Phys. 108, 013707 (2010)
https://doi.org/10.1063/1.3452380
Effect of threading screw and edge dislocations on transport properties of 4H–SiC homoepitaxial layers
S. I. Maximenko; J. A. Freitas, Jr.; R. L. Myers-Ward; K.-K. Lew; B. L. VanMil; C. R. Eddy, Jr.; D. K. Gaskill; P. G. Muzykov; T. S. Sudarshan
J. Appl. Phys. 108, 013708 (2010)
https://doi.org/10.1063/1.3448230
Electronic band structure calculations for biaxially strained Si, Ge, and III–V semiconductors
J. Appl. Phys. 108, 013710 (2010)
https://doi.org/10.1063/1.3437655
Characterization of gate recessed GaN/AlGaN/GaN high electron mobility transistors fabricated using a dry etch recipe
R. T. Green; I. J. Luxmoore; K. B. Lee; P. A. Houston; F. Ranalli; T. Wang; P. J. Parbrook; M. J. Uren; D. J. Wallis; T. Martin
J. Appl. Phys. 108, 013711 (2010)
https://doi.org/10.1063/1.3457356
Magnetism and Superconductivity
Determination of the role of O vacancy in Co:ZnO magnetic film
J. Appl. Phys. 108, 013901 (2010)
https://doi.org/10.1063/1.3456085
Pulsed laser deposited films: Nature of magnetic anisotropy II
J. Appl. Phys. 108, 013902 (2010)
https://doi.org/10.1063/1.3446840
Magnetic field-driven superconductor–insulator transition in boron-doped nanocrystalline chemical vapor deposition diamond
Gufei Zhang; J. Vanacken; J. Van de Vondel; W. Decelle; J. Fritzsche; V. V. Moshchalkov; B. L. Willems; S. D. Janssens; K. Haenen; P. Wagner
J. Appl. Phys. 108, 013904 (2010)
https://doi.org/10.1063/1.3437653
Magnetization reversal and spin ordering at low temperature for perovskite chromites
J. Appl. Phys. 108, 013905 (2010)
https://doi.org/10.1063/1.3457905
Structural, magnetic, and transport properties of Permalloy for spintronic experiments
J. Appl. Phys. 108, 013907 (2010)
https://doi.org/10.1063/1.3431384
Competing interparticle interactions and surface anisotropy in NiO nanoparticles
J. Appl. Phys. 108, 013909 (2010)
https://doi.org/10.1063/1.3459890
Use of second generation coated conductors for efficient shielding of dc magnetic fields
J. Appl. Phys. 108, 013910 (2010)
https://doi.org/10.1063/1.3459895
Dielectrics and Ferroelectricity
High temperature stress-induced “double loop-like” phase transitions in Bi-based perovskites
J. Appl. Phys. 108, 014101 (2010)
https://doi.org/10.1063/1.3428373
Size-dependences of the dielectric and ferroelectric properties of /polyvinylidene fluoride nanocomposites
J. Appl. Phys. 108, 014102 (2010)
https://doi.org/10.1063/1.3443582
Effect of tetragonal distortion on ferroelectric domain switching: A case study on La-doped ceramics
J. Appl. Phys. 108, 014103 (2010)
https://doi.org/10.1063/1.3445771
Effect of substrate orientation on lattice relaxation of epitaxial thin films
J. Appl. Phys. 108, 014104 (2010)
https://doi.org/10.1063/1.3452360
Effect of bipolar electric fatigue on polarization switching in lead-zirconate-titanate ceramics
J. Appl. Phys. 108, 014105 (2010)
https://doi.org/10.1063/1.3452326
The trap state relaxation related polarization in
J. Appl. Phys. 108, 014107 (2010)
https://doi.org/10.1063/1.3437634
Domain dynamics and fractal growth analysis in thin ferroelectric films
J. Appl. Phys. 108, 014108 (2010)
https://doi.org/10.1063/1.3456505
Microstructure and electrical properties of Aurivillius phase solid solution
J. Appl. Phys. 108, 014109 (2010)
https://doi.org/10.1063/1.3457229
Effect of Nb-donor and Fe-acceptor dopants in lead-free piezoceramics
Wook Jo; Emre Erdem; Rüdiger-A. Eichel; Julia Glaum; Torsten Granzow; Dragan Damjanovic; Jürgen Rödel
J. Appl. Phys. 108, 014110 (2010)
https://doi.org/10.1063/1.3437645
Room temperature multiferroic : Structural, dielectric, and magnetic properties
J. Appl. Phys. 108, 014111 (2010)
https://doi.org/10.1063/1.3459887
Effects of average and local structure on the dielectric behavior of ceramics
J. Appl. Phys. 108, 014112 (2010)
https://doi.org/10.1063/1.3459897
Energy level alignment and electrical properties of interfaces for tunable capacitors
J. Appl. Phys. 108, 014113 (2010)
https://doi.org/10.1063/1.3459899
Nanostripe domains in : Its origin and influences on high permittivity response
J. Appl. Phys. 108, 014114 (2010)
https://doi.org/10.1063/1.3457231
Nanoscale Science and Design
Low-loss spinel nanoferrite with matching permeability and permittivity in the ultrahigh frequency range
J. Appl. Phys. 108, 014301 (2010)
https://doi.org/10.1063/1.3455875
Mechanical properties of rippled structure in suspended stacks of graphene
J. Appl. Phys. 108, 014302 (2010)
https://doi.org/10.1063/1.3456007
Analytic model for minority carrier effects in nanoscale Schottky contacts
J. Appl. Phys. 108, 014303 (2010)
https://doi.org/10.1063/1.3448231
Tracking the catalyzed growth process of nanowires by in situ x-ray diffraction
J. Appl. Phys. 108, 014304 (2010)
https://doi.org/10.1063/1.3452342
Switching-current reduction in perpendicular-anisotropy spin torque magnetic tunnel junctions
J. Appl. Phys. 108, 014305 (2010)
https://doi.org/10.1063/1.3457327
Resonant characteristics of ultranarrow SiCN nanomechanical resonators
J. Appl. Phys. 108, 014306 (2010)
https://doi.org/10.1063/1.3428394
Characterization of inclined GaSb nanopillars by Mueller matrix ellipsometry
J. Appl. Phys. 108, 014307 (2010)
https://doi.org/10.1063/1.3386460
Trapping states in CdS:Eu nanobelts studied by excitation-dependent photoluminescence
J. Appl. Phys. 108, 014309 (2010)
https://doi.org/10.1063/1.3457857
Optical nonlinearities in Si-nanocrystals at 1064 nm excited by nanosecond-pulses
J. Appl. Phys. 108, 014311 (2010)
https://doi.org/10.1063/1.3457220
Spheroidal nanoparticles as thermal near-field sensors
J. Appl. Phys. 108, 014312 (2010)
https://doi.org/10.1063/1.3437651
Enhanced diffusion upon amorphous-to-nanocrystalline phase transition in layered systems
V. I. T. A. de Rooij-Lohmann; A. E. Yakshin; R. W. E. van de Kruijs; E. Zoethout; A. W. Kleyn; E. G. Keim; M. Gorgoi; F. Schäfers; H. H. Brongersma; F. Bijkerk
J. Appl. Phys. 108, 014314 (2010)
https://doi.org/10.1063/1.3460107
Device Physics
Evaluating luminescence based voltage images of silicon solar cells
M. Glatthaar; J. Haunschild; R. Zeidler; M. Demant; J. Greulich; B. Michl; W. Warta; S. Rein; R. Preu
J. Appl. Phys. 108, 014501 (2010)
https://doi.org/10.1063/1.3443438
Anisotropy in structural and physical properties in tetrathiafulvalene derivatives-based zone-cast layers as seen by Raman spectroscopy, UV-visible spectroscopy, and field effect measurements
Sylwia Kotarba; Jaroslaw Jung; Aneta Kowalska; Tomasz Marszalek; Marcin Kozanecki; Pawel Miskiewicz; Marta Mas-Torrent; Concepció Rovira; Jaume Veciana; Josep Puigmarti-Luis; Jacek Ulanski
J. Appl. Phys. 108, 014504 (2010)
https://doi.org/10.1063/1.3311554
High resolution on-chip thermometry using a microstrip-coupled transition edge sensor
J. Appl. Phys. 108, 014505 (2010)
https://doi.org/10.1063/1.3429088
Interpretation of recombination at interfaces by surface damage
J. Appl. Phys. 108, 014506 (2010)
https://doi.org/10.1063/1.3437643
Investigation of the interface between silicon nitride passivations and AlGaN/AlN/GaN heterostructures by C(V) characterization of metal-insulator-semiconductor-heterostructure capacitors
M. Fagerlind; F. Allerstam; E. Ö. Sveinbjörnsson; N. Rorsman; A. Kakanakova-Georgieva; A. Lundskog; U. Forsberg; E. Janzén
J. Appl. Phys. 108, 014508 (2010)
https://doi.org/10.1063/1.3428442
Photogating effect as a defect probe in hydrogenated nanocrystalline silicon solar cells
J. Appl. Phys. 108, 014509 (2010)
https://doi.org/10.1063/1.3437393
Surface current reduction in (211) oriented crystals by Ar bombardment
J. Appl. Phys. 108, 014510 (2010)
https://doi.org/10.1063/1.3459859
How to use a nanowire to measure vibrational frequencies: Device simulator results
J. Appl. Phys. 108, 014511 (2010)
https://doi.org/10.1063/1.3459896
Temperature and electric field dependent mobility in poly(3-hexylthiophene) diodes
J. Appl. Phys. 108, 014512 (2010)
https://doi.org/10.1063/1.3460111
Applied Biophysics
Time-varying electric field induced transmembrane potential of a core-shell model of biological cells
J. Appl. Phys. 108, 014701 (2010)
https://doi.org/10.1063/1.3456163
Interdisciplinary and General Physics
Sensor shape design for piezoelectric cantilever beams to harvest vibration energy
J. Appl. Phys. 108, 014901 (2010)
https://doi.org/10.1063/1.3457330
Photoacoustic effect induced by negative luminescence device
J. Appl. Phys. 108, 014903 (2010)
https://doi.org/10.1063/1.3456499
On the phase formation of sputtered hafnium oxide and oxynitride films
K. Sarakinos; D. Music; S. Mráz; M. to Baben; K. Jiang; F. Nahif; A. Braun; C. Zilkens; S. Konstantinidis; F. Renaux; D. Cossement; F. Munnik; J. M. Schneider
J. Appl. Phys. 108, 014904 (2010)
https://doi.org/10.1063/1.3437646
Simulations of chemical vapor deposition diamond film growth using a kinetic Monte Carlo model
J. Appl. Phys. 108, 014905 (2010)
https://doi.org/10.1063/1.3437647
Roughening of porous SiCOH materials in fluorocarbon plasmas
F. Bailly; T. David; T. Chevolleau; M. Darnon; N. Posseme; R. Bouyssou; J. Ducote; O. Joubert; C. Cardinaud
J. Appl. Phys. 108, 014906 (2010)
https://doi.org/10.1063/1.3446820
Lumped elements circuit of terahertz fishnet-like arrays with composite dispersion
J. Appl. Phys. 108, 014907 (2010)
https://doi.org/10.1063/1.3455994
DNA sensing using split-ring resonator alone at microwave regime
J. Appl. Phys. 108, 014908 (2010)
https://doi.org/10.1063/1.3459877
Ultrasonic characterization of air-saturated double-layered porous media in time domain
J. Appl. Phys. 108, 014909 (2010)
https://doi.org/10.1063/1.3456443
COMMUNICATIONS
Effect of deposition temperature on the morphology and contact resistance of Au on pentacene
J. Appl. Phys. 108, 016101 (2010)
https://doi.org/10.1063/1.3445268
Predicting the flying performance of thermal flying-height control sliders in hard disk drives
J. Appl. Phys. 108, 016102 (2010)
https://doi.org/10.1063/1.3456541
Magnetostatic interaction of glass-coated magnetic microwires
J. Appl. Phys. 108, 016103 (2010)
https://doi.org/10.1063/1.3429245
On the impact of germanium doping on the vacancy formation energy in Czochralski-grown silicon
J. Appl. Phys. 108, 016105 (2010)
https://doi.org/10.1063/1.3449080
A step-by-step guide to perform x-ray photoelectron spectroscopy
Grzegorz Greczynski, Lars Hultman
Piezoelectric thin films and their applications in MEMS: A review
Jinpeng Liu, Hua Tan, et al.
Tutorial: Simulating modern magnetic material systems in mumax3
Jonas J. Joos, Pedram Bassirian, et al.