Superconducting micro-resonators have application in sensors and quantum computing. Measurement of the resonator internal loss in the single-photon regime is a common tool to study the origins of dissipation, noise, and decoherence in quantum circuits, as well as characterization of materials used for quantum devices. However, such measurements are challenging and time-consuming with large uncertainties due to the poor signal-to-noise ratio when measured at single-photon power levels. We developed methods to extract a subset of the resonator fitting parameters at high power and fix them in the analysis of low power data, which reduce the parameter space in the regression analysis. By comparing the analysis with and without partial extraction, we show that these methods reduce the uncertainty of the results, while improving the robustness and efficiency of the loss measurement.
I. INTRODUCTION
Superconducting resonators are essential circuit elements in microwave photonics and quantum computing applications.1 The most popular superconducting qubit design, the transmon qubit,2,3 uses a Josephson junction as a non-linear inductor in an LC tank circuit to form an anharmonic oscillator with the ground and first excited states comprising the qubit. It is known that a large fraction of the loss is associated with the electric fields of the qubit penetrating the shunt capacitor and the ground plane outside the junction.4 The primary benefit of using resonators as opposed to qubits to extract loss is the general ease of design and fabrication. For example, planar linear resonator fabrication can be simplified to a one-layer deposition and patterning process without a junction, bandage, or integration layer.5
At millikelvin temperatures and single-photon excitation powers, superconducting resonator quality factors are ultimately limited by two-level systems (TLSs) residing in the amorphous dielectric materials at the interfaces between the air, superconductor, and substrate.6,7 At high power, TLSs are saturated8,9 and become less saturated as power decreases leading to a power-dependent resonator internal quality factor (or internal loss ). When measured as a function of photon number or internal field strength, this power-dependent relationship can be exploited to differentiate TLS-related loss from power-independent losses due to quasiparticles, radiation, trapped flux, etc.10–13
The power-dependent losses are commonly measured using a vector network analyzer (VNA) to obtain a set of scattering parameters, , as a function of within a few linewidths around the resonance frequency . The quality factor and other resonator parameters can be extracted from independent fits to the complex for each power. Determining the TLS-induced loss this way often requires so one must decrease the VNA power to very low levels. In this regime, the measurement signal-to-noise ratio (SNR) is poor and limited by the cryogenic amplifier noise in typical setups. The low SNR reduces the fit quality and often produces unreliable values with large uncertainties.14 To increase SNR, one must inevitably increase acquisition time, but this, in turn, makes the measurement susceptible to long term drift from TLS and the amplifiers. For these reasons, accurately determining resonator at single-photon power levels remains challenging and time consuming.
In this paper, we address this challenge by improving the measurement and data analysis methodologies. Instead of fitting parameters independently at each power as is conventionally done, our strategy is to extract a subset of the resonator fitting parameters (such as the coupling and the impedance mismatch angle ) from high power data and fix these parameters in the analysis of low power data. We use this method of partial parameter extraction to analyze experimental data acquired from Al and Nb resonators and show that great improvements have been achieved in terms of accuracy and robustness of the results.
II. REVIEW OF THE CONVENTIONAL METHOD
Conventional multi-step fitting procedure. (a) Scanning electron micrograph of a coplanar waveguide (CPW) resonator in the hanger configuration inductively coupled to a transmission line. (b) The lumped element circuit diagram representing the resonator featured in (a). (c) The raw data are plotted in red. The cable delay term introduces a frequency dependent rotation that causes the raw data to wrap onto itself. The cable delay is determined by a linear fit to the phase of a wide frequency sweep shown in (d). Removing the cable delay-induced phase gives the unwrapped data (green): . Next, is fit to a circle (solid line) to determine the radius and circle center (green ). This allows the data to be translated to the origin to obtain the centered data (blue): . The phase angle of the complex is fit to a nonlinear model to obtain , and . The coupling is found as and the impedance mismatch angle is found as . (d) The unwrapped phase of a broadband frequency sweep plotted as a function of frequency. A linear fit (red line) to ( is some constant) determines the cable delay ns. Note that is the time (typically 50–300 ns) required for a signal to make the roundtrip from port 1 to port 2 of the VNA and includes the delay on the chip. (e) The phase angle of vs frequency. A nonlinear fit (black line) to an function determines , and .
Conventional multi-step fitting procedure. (a) Scanning electron micrograph of a coplanar waveguide (CPW) resonator in the hanger configuration inductively coupled to a transmission line. (b) The lumped element circuit diagram representing the resonator featured in (a). (c) The raw data are plotted in red. The cable delay term introduces a frequency dependent rotation that causes the raw data to wrap onto itself. The cable delay is determined by a linear fit to the phase of a wide frequency sweep shown in (d). Removing the cable delay-induced phase gives the unwrapped data (green): . Next, is fit to a circle (solid line) to determine the radius and circle center (green ). This allows the data to be translated to the origin to obtain the centered data (blue): . The phase angle of the complex is fit to a nonlinear model to obtain , and . The coupling is found as and the impedance mismatch angle is found as . (d) The unwrapped phase of a broadband frequency sweep plotted as a function of frequency. A linear fit (red line) to ( is some constant) determines the cable delay ns. Note that is the time (typically 50–300 ns) required for a signal to make the roundtrip from port 1 to port 2 of the VNA and includes the delay on the chip. (e) The phase angle of vs frequency. A nonlinear fit (black line) to an function determines , and .
III. UPDATING THE DCM WITH CONSTRAINED PARAMETERS OBTAINED AT HIGH POWER
The diameter correction method works well for obtaining resonator parameters at large microwave powers but begins to produce poor fits at lower powers where the SNR is low. We introduce an updated version of DCM called parameter-constrained DCM (PC-DCM) that improves the quality and reliability of the fitting procedures at all powers. The main motivation behind PC-DCM is that many parameters listed in Eq. (1) are constant for any number of photons as long as the system response is linear (free from nonlinear effects such as amplifier saturation and nonlinear kinetic inductance). These parameters can be determined with much higher accuracy at higher powers, and then reused to fit data at lower powers. Parameters such as describe circuit properties of the signal chain rather than the resonator itself. Meanwhile, is fixed by design. The two remaining parameters, and , can depend on power (e.g., due to TLS saturation and nonlinear kinetic inductance effect19). For low power resonator loss measurements on resonators with a low kinetic inductance fraction, the power dependence of is typically much weaker than .16
The PC-DCM procedure has four steps. First, accurately determine the cable delay from a wideband frequency sweep (same as in DCM). Second, use DCM to fit all parameters using high power data. The values obtained from the fit, such as and , are now treated as constant values just like . Third, perform a parameter-constrained circle fit, phase fit and an optional refining fit on the lower power data using the previously determined as constant values. This reduces the fitting problem in Eq. (1) down to a two-parameter fit for and . Finally, extract from Eq. (3).
We measured a 100 nm Al resonator patterned on a Si substrate [Fig. 1(a)], to show how PC-DCM can improve the fitting quality over DCM. Figure 2(a) shows the measured -data of the resonator at . This data set spanned 8 linewidths is fit using DCM (green circle). A subset of the data spanning 1 linewidth enclosed by the dashed box is fit using PC-DCM (red circle) with the constrained parameters , , and predetermined at a higher power. We extract to be for DCM and for PC-DCM. The reason for this discrepancy can be traced to back to the phase fit in Fig. 2(b) which shows that the DCM fit converged to a sub-optimal result. The corresponding reduced for the DCM fit is 5.01, whereas it is 1.07 for the PC-DCM fit. This highlights the importance of constraining the parameter space to improve fitting reliability in the presence of noise and reduce the number of erroneous fits.
A fitting example using DCM and PC-DCM. (a) Unwrapped data from a 100 nm Al resonator taken at photons spanning 8 linewidths centered at is plotted in purple. A subset of the points within the red dashed box spanned 1 linewidth. The full data set (purple) is fit using DCM while the subset (red dashed box) is fit using PC-DCM. The constrained parameters in the PC-DCM fit are predetermined from the DCM fttings to the data measured at photons. Off resonance points are marked by “ .” (b) The unwrapped phase of the centered data vs frequency. In both a and b, the solid lines indicate the fits to the data using the DCM and the PC-DCM. The red dashed line is the PC-DCM fit extrapolated to the rest of the data.
A fitting example using DCM and PC-DCM. (a) Unwrapped data from a 100 nm Al resonator taken at photons spanning 8 linewidths centered at is plotted in purple. A subset of the points within the red dashed box spanned 1 linewidth. The full data set (purple) is fit using DCM while the subset (red dashed box) is fit using PC-DCM. The constrained parameters in the PC-DCM fit are predetermined from the DCM fttings to the data measured at photons. Off resonance points are marked by “ .” (b) The unwrapped phase of the centered data vs frequency. In both a and b, the solid lines indicate the fits to the data using the DCM and the PC-DCM. The red dashed line is the PC-DCM fit extrapolated to the rest of the data.
IV. CONFORMAL MAPPING WITH CONSTRAINED PARAMETERS
In this section, we describe a new method for analyzing resonators based on a conformal map of the data. We show how the unwrapped data can be mapped from the -plane to a new -plane with . Conformal mapping is a powerful mathematical tool that has broad applications in microwave engineering.20 It is often used to map orthogonal curvilinear coordinates into cartesian coordinates. In our method, the two orthogonal quadratures, often referred to as the frequency quadrature (tangential to the circle) and the dissipation quadrature (perpendicular to circle),21 are mapped to the imaginary part and real part in the new -plane, respectively. This is possible because Eq. (1) has the general form of a bilinear (or Mobius) transformation:22 , which is a special class of conformal maps that map lines and circles in the -plane into lines and circles in the -plane. The two following subsections illustrate how to use this new fitting method to determine resonator parameters at high power as well as establish the conformal map to analyze data taken at low power.
A. Fitting procedures to establish the conformal map at high power
Conformal mapping method to fit resonator parameters and determine step by step. (a) The unwrapped data measured at high power on a 100 nm Al resonator are normalized to (dark circle). The map turns the resonance circle into a straight line. Next, the data are further rotated to a vertical line to obtain , where is determined by finding the slope of the -line from a linear fit (red line). The colored dots corresponds to time dependent data taken at a single frequency at different photon numbers. (b) Plot of the ratio as a function of frequency to determine , , and . The red line indicates the best linear fit. (c) The -line is further scaled and translated to obtain (open circles). A simple average of yields , which concludes the fitting procedure for data at and establishes the conformal map from to . The time-dependent single-frequency transmission data measured at different [colored dots inside the circle in (a)] are directly mapped to [colored dots in (c)]. (d) A plot of vs generated from the mean of of the data points for each power in (c) with the error bar calculated from the standard error of the mean. Here we only show data for five sparsely spaced levels for clarity of the plots. Full power sweeps down to single photon level will be discussed in the next section.
Conformal mapping method to fit resonator parameters and determine step by step. (a) The unwrapped data measured at high power on a 100 nm Al resonator are normalized to (dark circle). The map turns the resonance circle into a straight line. Next, the data are further rotated to a vertical line to obtain , where is determined by finding the slope of the -line from a linear fit (red line). The colored dots corresponds to time dependent data taken at a single frequency at different photon numbers. (b) Plot of the ratio as a function of frequency to determine , , and . The red line indicates the best linear fit. (c) The -line is further scaled and translated to obtain (open circles). A simple average of yields , which concludes the fitting procedure for data at and establishes the conformal map from to . The time-dependent single-frequency transmission data measured at different [colored dots inside the circle in (a)] are directly mapped to [colored dots in (c)]. (d) A plot of vs generated from the mean of of the data points for each power in (c) with the error bar calculated from the standard error of the mean. Here we only show data for five sparsely spaced levels for clarity of the plots. Full power sweeps down to single photon level will be discussed in the next section.
Table of variable definitions and relationships.
Definition . | Variable . | Relationship . |
---|---|---|
Raw S21 data | S21 | |
Cable delay removed | z | z = S21 ej2πfτ |
Centered data | z1 | z1 = z − zc |
Normalized data | z2 | z2 = z/z∞ |
Inverted data | w | w = (1 − z2)−1 |
Rotated, inverted data | w1 | w1 = wejϕ |
Conformally mapped data | w2 |
Definition . | Variable . | Relationship . |
---|---|---|
Raw S21 data | S21 | |
Cable delay removed | z | z = S21 ej2πfτ |
Centered data | z1 | z1 = z − zc |
Normalized data | z2 | z2 = z/z∞ |
Inverted data | w | w = (1 − z2)−1 |
Rotated, inverted data | w1 | w1 = wejϕ |
Conformally mapped data | w2 |
B. Direct mapping of the low power data
The conformal map provides a straightforward transformation of data into and values. According to Eq. (4), it is most efficient to measure at a single frequency at lower powers, where is the resonance frequency determined at high power in the linear regime, instead of performing a frequency sweep around as is done in the DCM and PC-DCM. This is similar to other time-domain resonator measurement applications, such as kinetic inductance detectors and qubit readout, where the probe tone is fixed at the resonance frequency. The time-dependent single-frequency data taken for a period of time at each lower power are directly mapped to -plane using Eq. (11). We plot these data as the colored dots in Figs. 3(a) and 3(c) alongside the high power data obtained from a frequency sweep. In Fig. 3(d), we plot extracted values against generated from the mean of at each power with the error bar quoting the standard error of the mean. We hereafter refer to this method of directly mapping the single frequency data to the -plane to calculate as the parameter-constrained conformal mapping (PC-CM) method. The ability to process lower power data without the need for any fitting is a unique feature of the PC-CM method and makes it advantageous over non-linear fitting because it is insensitive to choice of initial conditions or weighting of points.
V. RESULTS: COMPARING THE METHODS WITH EXPERIMENTAL DATA
We report comparison of the DCM, PC-DCM, CM, and PC-CM methods by analyzing experimental data on 100 nm evaporated Al and 100 nm sputtered Nb resonators on Si substrates. Each resonator chip has 12 CPW resonators with designed resonance frequencies between 5.2 and 6.2 GHz and coupling . An electron micrograph of the fabricated resonator is shown in Fig. 1(a). The devices were cooled down in a dilution refrigerator or an adiabatic demagnetization refrigerator (ADR). Measurements were carried out using a VNA in a conventional cryogenic setup4 shown in Fig. 4.
Device and measurement setup. Two experimental setups were used in this study. A VNA was used to measure the of a resonator in either a DR (dilution refrigerator) with a base temperature of 10 mK or ADR (adiabatic demagnetization refrigerator) with a variable temperature between 100 mK and 3 K. The input lines contained a series of attenuators for thermalization and to attenuate noise from higher temperature stages; blue (red) dashed boxes show the attenuator configurations for the DR (ADR). On the output side, two linear amplifiers including a HEMT were used to amplify the signal. A high permeability magnetic shield was used to reduce flux-trapping from stray fields.
Device and measurement setup. Two experimental setups were used in this study. A VNA was used to measure the of a resonator in either a DR (dilution refrigerator) with a base temperature of 10 mK or ADR (adiabatic demagnetization refrigerator) with a variable temperature between 100 mK and 3 K. The input lines contained a series of attenuators for thermalization and to attenuate noise from higher temperature stages; blue (red) dashed boxes show the attenuator configurations for the DR (ADR). On the output side, two linear amplifiers including a HEMT were used to amplify the signal. A high permeability magnetic shield was used to reduce flux-trapping from stray fields.
In the following discussions, unless otherwise noted, we always used the fitting results of DCM at the highest power to constrain the parameters in PC-DCM ( , and ) and CM ( only). As for the PC-CM method, the lower power data were mapped to using the conformal map established by a CM fit at the highest power. In addition, all error bars are quoted at the 68% confidence level ( ).
A. Validation of the power-independent assumption
The methods (PC-DCM, PC-CM) introduced here depend on the independence of the off resonance point , impedance mismatch angle , and coupling from the photon number . Here we show that these three parameters are unchanged across a wide range of using data from a 100 nm Nb resonator measured in the ADR; we also show that these parameters are unchanged as a function of temperature for temperatures well below the critical temperature (9.2 K). We plot in Fig. 5(a) the power-dependent resonance curves measured at 300 mK and . In Fig. 5(b), we plot the temperature-dependent resonance curves measured between 100 mK and 1.5 K at . All measurements used the same number of points, acquisition time, and frequency span.
Validation of power-independent . (a) Resonance circles measured at 300 mK and . The fitted centers of the circles are marked by “ ,” which are then fit to a straight line (dashed line). The off-resonance points are marked by “ .” (b) Resonance circles measured between 100 mK and 1.5 K at . (c) The circle centers of the power-dependent and temperature-dependent resonance circles plotted together. The corresponding linear fits are plotted as the dashed lines. The angle is formed between the dashed line and the red line that connects the off resonance point to the origin. (d) A combined zoomed-in plot of the red boxes in (a) and (b) showing the significant overlap of the power-dependent and temperature-dependent off resonance points. (e) The extracted values from PC-DCM fits on the power-dependent (bottom) and temperature-dependent (top) resonance circles.
Validation of power-independent . (a) Resonance circles measured at 300 mK and . The fitted centers of the circles are marked by “ ,” which are then fit to a straight line (dashed line). The off-resonance points are marked by “ .” (b) Resonance circles measured between 100 mK and 1.5 K at . (c) The circle centers of the power-dependent and temperature-dependent resonance circles plotted together. The corresponding linear fits are plotted as the dashed lines. The angle is formed between the dashed line and the red line that connects the off resonance point to the origin. (d) A combined zoomed-in plot of the red boxes in (a) and (b) showing the significant overlap of the power-dependent and temperature-dependent off resonance points. (e) The extracted values from PC-DCM fits on the power-dependent (bottom) and temperature-dependent (top) resonance circles.
We begin with an analysis of the power-dependent data. We determined the center of each resonance circle (marked by “ ”) with a circle fit. Next, we fit the center points to a straight line (dashed lines) with a slope of and an goodness-of-fit value of 0.998.23 The fact that all the circle centers aligned along this common line indicates that the angle remained unchanged at different . We then used the intersection of this line with the circle fits to determine the off resonance points (marked by “ ”) which we show in a close-up plot in Fig. 5(d). The large overlap of the points suggests that the off-resonance points also remained unchanged at different . Finally, we used these values of and to perform independent PC-DCM fits of all the resonance circles while allowing to vary. We plot the extracted values in Fig. 5(e). This analysis was repeated on the temperature-dependent resonance circles. The straight line fit of the circle centers in this case yielded a slope of and an goodness-of-fit value of 0.999. We plot the corresponding off resonance points and values in Figs. 5(d) and 5(e) which overlap well with the power-dependent results. Our results confirm that the resonator parameters , , and were unchanged when the internal loss changed in a wide range (whether due to TLS saturation or thermal quasi-particles). We note that it is good practice to carry out this validation procedure to verify the power-independence assumption prior to using the parameter-constrained methods. Once confirmed, it is valid to treat these parameters as constant values, determine them from resonance circles measured at high power, and reuse them to fit data measured at lower powers.
B. Comparison of 1/Qi in a full power sweep
In Fig. 6, we present data measured on a 100 nm Al resonator in the DR and compare the extracted from each of the four methods as a function of . We took three data sets in total. Each data set contained 100 data points with one set spanning six linewidths for DCM, another spanning one linewidth for PC-DCM and CM, and lastly a single frequency measurement for PC-CM, all centered around the resonance frequency. The same integration time per point was used for each data set.
Comparing in a full power sweep using the same integration time per point. (a) vs measured on a 100 nm Al resonator analyzed using the DCM, PC-DCM, CM, and PC-CM methods. (b) Time-dependent values extracted using PC-CM at three different . In the case, the drift of over time is larger than the error bars produced by PC-CM. This showcases that at low powers the uncertainty in is dominated by the intrinsic fluctuations of the resonator due to TLS and less so by the measurement hardware noise (amplifier noise).
Comparing in a full power sweep using the same integration time per point. (a) vs measured on a 100 nm Al resonator analyzed using the DCM, PC-DCM, CM, and PC-CM methods. (b) Time-dependent values extracted using PC-CM at three different . In the case, the drift of over time is larger than the error bars produced by PC-CM. This showcases that at low powers the uncertainty in is dominated by the intrinsic fluctuations of the resonator due to TLS and less so by the measurement hardware noise (amplifier noise).
We plot the extracted against in Fig. 6(a). The error bars for DCM and PC-DCM were calculated from the covariance matrix of the fit while CM and PC-CM use the standard error of the mean as stated previously. The four methods give overall consistent curves that show decreases with due to the TLS saturation effect. At the values agree well with each other to within 1% showing that they give equivalent results when the SNR is high. This implies that either DCM or CM can be used to determine the power-independent parameters at high power. At intermediate powers of , the results from all four methods agree to within . Finally in the single photon regime ( ), we begin to see large deviations over . There are two main contributions that factor into the deviations: the fitting uncertainty from the HEMT (high electron mobility transistor) noise and the TLS-induced fluctuations. Superconducting CPW resonators are known to fluctuate in quality factor as a result of two-level systems. Changes of up to 30% within tens of minutes have been observed in the literature.24–26 In our case, the third single frequency data set was taken several minutes after the first data set. Also, the error bars reported in Fig. 6(a) only account for the measurement white noise and do not factor in TLS-induced fluctuations.
We further explored these TLS-induced fluctuations by measuring single frequency data spanning a period of 1000 s at three power levels and processed the data using the PC-CM method. We plot the resulting against time in Fig. 6(c). Each data point is the average of 575 values measured in 5.75 s with the error bars quoting the standard error of the mean. We confirm that the internal loss is capable of changing by 30% or more within minutes at . In addition, we also found the magnitude of fluctuations decreased with increasing as expected from TLS saturation. While a discussion of the rich physics behind these observations is beyond the scope of this methodology-focused paper, we have demonstrated that the presented non-conventional single-frequency measurement and conformal mapping data analysis techniques are useful tools to study these phenomena.
C. Comparison of fitting uncertainties
An additional feature we see in Fig. 6 is that the error bars at any are different and in a fixed order (largest for DCM and smallest for PC-CM). Here we take a closer look at the errors (uncertainty) in the extracted by measuring a 100 nm Nb resonator in the ADR and compare the errors reported by each of the fitting methods. Four data sets were measured in total. We took one frequency sweep that spanned 3 linewidths for DCM, one that spanned 1 linewidth for PC-DCM and CM, and a single frequency measurement for PC-CM. The fourth data set was also a single frequency measurement that was taken off resonance (2 MHz de-tuned from the resonance) to assess the measurement noise.
We plot the extracted vs in Fig. 7(a). The results from the four methods agree with each other with a maximum difference of occurring at the lowest . Fit quality was evaluated by calculating the reduced chi-square statistic and we plot the results in Fig. 7(c). We find an average across all . However, the different methods yielded different standard errors in as shown in Fig. 7(b). Two clear trends can be observed in the data. First, the errors all scale inversely with the photon number as expected from the reduced SNR at lower powers. Second, at any photon number the errors follow the order , showing that PC-DCM, CM, and PC-CM achieve lower error than the conventional DCM with PC-CM showing the lowest error. This second trend is consistent with our intuition that data taken closer to (further away from) the resonance contains more (less) information about the properties of the resonator and should result in better (worse) estimates of . Therefore, it is unsurprising that the different frequency spans used by the four methods resulted in different fitting uncertainties.
Comparison of fitting uncertainties from the four methods. The data shown is for a 100 nm Nb resonator measured in the ADR at 1 K. (a) vs as determined by each of the four methods for data measured using a VNA IFBW of 1000 Hz. (b) Errors in reported by each method against . The errors for DCM and PC-DCM were found from the covariance matrix while the standard errors for CM and PC-CM methods were directly calculated in the plane (see Fig. 3) from the standard error of the mean: where is the number of data points. These are also plotted as error bars in (a). (c) The reduced vs corresponding to each of the fits in (a,b). In order to calculate we estimated the measurement noise by calculating the variance of the transmission background as , where are data points measured at a single frequency MHz far off resonance. The small increase of over 1 at high power (low power) end is likely due to excess noise from saturated TLS21,24,25 (long-term fluctuations from unsaturated TLS discussed earlier in this paper). (d). The standard errors in reported by each method for data taken at vs VNA IFBW. The solid lines correspond to best fits to the scaling law .
Comparison of fitting uncertainties from the four methods. The data shown is for a 100 nm Nb resonator measured in the ADR at 1 K. (a) vs as determined by each of the four methods for data measured using a VNA IFBW of 1000 Hz. (b) Errors in reported by each method against . The errors for DCM and PC-DCM were found from the covariance matrix while the standard errors for CM and PC-CM methods were directly calculated in the plane (see Fig. 3) from the standard error of the mean: where is the number of data points. These are also plotted as error bars in (a). (c) The reduced vs corresponding to each of the fits in (a,b). In order to calculate we estimated the measurement noise by calculating the variance of the transmission background as , where are data points measured at a single frequency MHz far off resonance. The small increase of over 1 at high power (low power) end is likely due to excess noise from saturated TLS21,24,25 (long-term fluctuations from unsaturated TLS discussed earlier in this paper). (d). The standard errors in reported by each method for data taken at vs VNA IFBW. The solid lines correspond to best fits to the scaling law .
The ratios of uncertainties in from the four methods at each [Fig. 7(b)] is found to be . Because the measurement time to achieve a given uncertainty level in scales as , we expect that the PC-CM and CM (PC-DCM) methods can reduce the measurement time by a factor of 10 and 5 (5), respectively, as compared to the conventional DCM. To demonstrate this measurement time reduction advantage, we measured additional data sets at with the same 200 data points but used different VNA IF bandwidths (IFBW) from 2000 Hz down to 100 Hz. This corresponded to measurement times from 0.1 to 2 s. The errors in against IFBW are plotted in Fig. 7(d). We find that the standard error achieved by PC-CM (CM and PC-DCM) at an IFBW of 1000 Hz (500 Hz) is comparable to the one given by DCM at an IFBW of 100 Hz (dashed line), which indeed translates into a factor 10 (5) reduction in measurement time for the PC-CM (CM and PC-DCM) from the conventional DCM. In addition, we find that the error in Fig. 7(d) for each method scales as the square-root of the IFBW. This suggests the measurement is dominated by the white noise from our HEMT which has an input-referred noise temperature of 5 K. This showcases that the new methods are able to improve measurement uncertainty or efficiency over the conventional diameter correction method in the presence of white noise. In addition, the decreased measurement times of the PC-DCM and PC-CM should also help to reduce fitting errors due to TLS-induced fluctuations.
VI. DISCUSSION AND CONCLUSION
As we have discussed in the previous section, there are two main noise sources that contribute to the uncertainty in the extracted measured in the single photon regime: amplifier noise and the intrinsic TLS-induced fluctuations. Our proposed methods (PC-DCM and PC-CM) address the first contribution and improve the fitting uncertainty by focusing the measurement to be at or very close to the resonance frequency where the is most sensitive to the underlying parameter . We remark that this is only possible by constraining parameters because the conventional unconstrained DCM requires data away from resonance by necessity in order to fit the resonance circle and extract values for , and . We also note that these new methods are equally applicable to both HEMT or parametric amplifiers with quantum limited noise. Our new methods do not address the noise contribution from the intrinsic TLS-induced fluctuations but provide a useful tool to study this phenomenon. In particular, PC-CM can be used to measure changes in the resonator frequency by reading the fractional frequency shift from the imaginary part of .
Two additional considerations should be noted when applying the new analysis techniques. First, the single measurement frequency used in the PC-CM method should be set as close as possible to the resonance frequency , but a small detuning or drift in is tolerable. This is because the conformal map defined in Eq. (11) is valid for any frequency on or off resonance, assuming Eq. (1) accurately describes the response of the resonator. The conformal map separates changes in and into two orthogonal directions so that drift in corresponds to movement only along the imaginary axis in the plane without any changes in the value; this also suggests that the value extracted using PC-CM is insensitive to frequency noise. As a rule of thumb, we recommend to always keep to within one linewidth of at all times when applying PC-CM. Second, the new analysis techniques have been successfully applied to Nb and Al resonators with low kinetic inductance fractions, but special care should be taken when applying our technique to resonators fabricated from materials with high kinetic inductance, such as TiN or NbTiN. One should avoid using these techniques in the high power, non-linear regime where the resonance circles are distorted and Eq. (1) is no longer valid in describing the response. Any fitting or mapping should be done in the linear regime, which applies in general to measurement near the single-photon level.
In conclusion, we presented new measurement and data analysis methods for resonator internal loss that are more accurate, efficient, and robust than the conventional diameter correction method. Extracting a subset of power-independent resonator parameters from high power enabled us to spend measurement time more efficiently on resonance to reduce the fitting uncertainty as we have shown with experimental data. In particular, the conformal mapping method provides an efficient way to analyze transmission data gathered on resonators by directly mapping data into and values. All together, these new resonator loss measurements extend the toolbox available to experimentalists for studying the physical origins of dissipation, noise and decoherence in quantum circuits as well as to characterize materials used for quantum devices.
ACKNOWLEDGMENTS
We thank the staff from across the AWS Center for Quantum Computing that enabled this project. We also thank Simone Severini, Bill Vass, James Hamilton, Nafea Bshara, and Peter DeSantis at AWS for their involvement and support of the research activities at the AWS Center for Quantum Computing.
AUTHOR DECLARATIONS
Conflict of Interest
The authors have no conflicts to disclose.
Author Contributions
C.C. and D.P. contributed equally to this work.
Cliff Chen: Data curation (equal); Formal analysis (equal); Investigation (equal); Software (equal); Writing – original draft (equal); Writing – review & editing (equal). David Perello: Data curation (equal); Formal analysis (equal); Investigation (equal); Writing – original draft (equal); Writing – review & editing (equal). Shahriar Aghaeimeibodi: Methodology (supporting); Software (supporting). Guillaume Marcaud: Methodology (supporting). Ignace Jarrige: Methodology (supporting). Hanho Lee: Investigation (supporting). Warren Fon: Investigation (supporting). Matt Matheny: Conceptualization (equal); Project administration (equal); Resources (equal); Writing – review & editing (equal). Jiansong Gao: Conceptualization (equal); Formal analysis (equal); Investigation (equal); Methodology (equal); Supervision (equal); Writing – original draft (equal); Writing – review & editing (equal).
DATA AVAILABILITY
The data that support the findings of this study are available from the corresponding author upon reasonable request.