Excess polarization dependent loss (PDL) was investigated for GaN waveguide devices grown by molecular beam epitaxy (MBE). The loss for transverse magnetic polarization strongly depended on the edge dislocation density in the crystal, because the dislocations capture electrons and act like a wire-grid polarizer. By means of MBE regrowth on GaN grown with metal-organic chemical vapor deposition (MOCVD), the PDL was reduced to with an edge dislocation density of , whereas it was approximately for an all-MBE-grown sample. An ultrafast all-optical switch utilizing the intersubband transition was fabricated with a multiple quantum well structure that was regrown with MBE on MOCVD-grown GaN. An extinction ratio of as high as was achieved with a control pulse energy of , which is attributable to the reduction of the excess PDL.
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1 May 2006
Research Article|
May 15 2006
Polarization dependent loss in III-nitride optical waveguides for telecommunication devices
Norio Iizuka;
Norio Iizuka
a)
Corporate Research & Development Center,
Toshiba Corporation
, 1, Komukai Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japan
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Kei Kaneko;
Kei Kaneko
Corporate Research & Development Center,
Toshiba Corporation
, 1, Komukai Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japan
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Nobuo Suzuki
Nobuo Suzuki
Corporate Research & Development Center,
Toshiba Corporation
, 1, Komukai Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japan
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a)
Electronic mail: [email protected]
J. Appl. Phys. 99, 093107 (2006)
Article history
Received:
October 12 2005
Accepted:
February 15 2006
Citation
Norio Iizuka, Kei Kaneko, Nobuo Suzuki; Polarization dependent loss in III-nitride optical waveguides for telecommunication devices. J. Appl. Phys. 1 May 2006; 99 (9): 093107. https://doi.org/10.1063/1.2195422
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