Amplification of terahertz radiation on intersubband transitions has been analyzed by numerical Monte Carlo simulation for -type delta-doped Ge films with in-plane transport configuration of applied electric and magnetic fields. A significant increase of the gain is found, compared to existing bulk -Ge lasers, due to spatial separation of light and heavy hole streams, which reduces scattering of light holes on ionized impurities and heavy holes. The considered device has potential as a widely tunable laser with high duty cycle and operating temperatures up to .
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