In CdMnTe and CdMnCoTe films, Mn shifts the absorption edge toward higher energies. However, this gap shift occurs at around 2.1eV because the band gap of the combination of CdTe (1.53eV) and wideband gap MnTe (2.9eV) is small. In order to widen the gap of AII1xMnxBVI alloys and effectively use LDs that work at shorter wavelengths for Faraday rotation, we have studied ZnMnTe and ZnMnCoTe films, whose parent materials are wideband gap ZnTe (2.28eV) and MnTe. The relationship between the quantity (αhν)2 and the optical energy for Cd0.65Mn0.35Te and data on Zn0.75Mn0.25Te and Zn0.79Mn0.20Co0.01Te films showed that the direct gap energy of the Cd0.65Mn0.35Te film is roughly 2.25eV and the gap of Zn0.75Mn0.25Te and Zn0.79Mn0.20Co0.01Te(2.4eV) is 0.15eV(40nm) larger than that of Cd0.65Mn0.35Te. The increase is due to the combination of wideband gap ZnTe and MnTe. Transparency and Faraday rotation are observed for Zn1xMnxTe and Zn1xyMnxCoyTe films.

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