Key aspects of the growth process of epitaxial with crystalline interface on silicon are outlined. An important step in this process is the solid phase epitaxy in ultrahigh vacuum of amorphous on top of a few monolayer thick, low-temperature grown, epitaxial template. Insufficient oxygen supply during the deposition step causes the formation of amorphous alkaline-earth silicates and at the Si∕epitaxial oxide interface during ultrahigh vacuum annealing. Performing deposition in excess , this interfacial reaction is suppressed, and a metal-insulator-semiconductor capacitance equivalent to of is obtained for a cell cell stack.
Solid phase epitaxy of on : The relationship between oxygen stoichiometry and interface stability
G. J. Norga, C. Marchiori, C. Rossel, A. Guiller, J. P. Locquet, H. Siegwart, D. Caimi, J. Fompeyrine, J. W. Seo, Ch. Dieker; Solid phase epitaxy of on : The relationship between oxygen stoichiometry and interface stability. J. Appl. Phys. 15 April 2006; 99 (8): 084102. https://doi.org/10.1063/1.2190078
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