Fast and ultrafast switch-on processes in pn diodes at very high current densities j and very short current rise time τ0 have been investigated analytically. It is demonstrated that even at relatively modest values of the rate of current density rise djdt, the switch-on transient fundamentally differs from that in the “classical” quasineutral mode. The switch-on processes occur in modes with broken neutrality. The base resistivity is modulated by fast hole and electron waves that propagate toward each other at the maximum possible (saturation) velocities. The conditions for the appearance of fast waves have been established. Analytical expressions for the initial stage of propagation of these waves have been derived. Adequate computer simulation confirms the analytical results.

1.
A. F.
Kardo-Sysoev
,
New Power Semiconductor Devices for Generation of Nano- and Subnanosecond Pulses
in
Ultrawideband Radar Technology
, edited by
J. D.
Taylor
(
CRC
,
Boca Raton, FL
,
2000
).
2.
P.
Rodin
,
U.
Ebert
,
W.
Hundsdorfer
, and
I. V.
Grekhov
,
J. Appl. Phys.
92
,
1971
(
2002
).
3.
I. V.
Grekhov
,
S. V.
Korotkov
, and
D. V.
Khristyuk
,
Instrum. Exp. Tech.
45
,
671
(
2002
).
4.
I. V.
Grekhov
,
A. K.
Kozlov
,
S. V.
Korotkov
,
A. L.
Stepanyantz
,
V. I.
Tulaev
,
S. N.
Vasil’ev
, and
S. V.
Gornostaev
,
Instrum. Exp. Tech.
45
,
674
(
2002
).
5.
S. N.
Vainshtein
,
V. S.
Yuferev
, and
J. T.
Kostamovaara
,
Solid-State Electron.
47
,
1255
(
2003
).
6.
S. N.
Vainshtein
,
J. T.
Kostamovaara
,
Y.
Sveshnikov
,
S.
Gurevich
,
M.
Kulagina
,
V. S.
Yuferev
,
L.
Shestak
, and
M.
Sverdlov
,
Electron. Lett.
40
,
85
(
2004
).
7.
I. V.
Grekhov
,
V. M.
Efanov
,
A. F.
Kardo-Sysoev
, and
S. V.
Shenderey
,
Solid-State Electron.
28
,
597
(
1985
).
8.
I. V.
Grekhov
and
G. A.
Mesyats
,
IEEE Trans. Plasma Sci.
28
,
1540
(
2000
).
9.
A. I.
Bushlyakov
,
A. V.
Ponomarev
,
S. N.
Rukin
,
B. G.
Slovikovsky
, and
S. P.
Timoshenkov
,
Instrum. Exp. Tech.
45
,
214
(
2002
).
10.
A.
Engelko
and
H.
Bluhm
,
J. Appl. Phys.
95
,
5828
(
2004
).
11.
Yu. R.
Nosov
,
Physical Principles of Semiconductor Diode Operation in Pulse Regimes
(
Nauka
,
Moscow
,
1968
).
12.
R. H.
Dean
,
J. Appl. Phys.
40
,
585
(
1969
).
13.
S. L.
Rumyantsev
,
Sov. Phys. Semicond.
26
,
1097
(
1992
).
14.
T. T.
Mnatsakanov
,
M. E.
Levinshtein
,
P. A.
Ivanov
,
J. W.
Palmour
,
M.
Das
, and
A. K.
Agarwal
,
Semicond. Sci. Technol.
20
,
62
(
2005
).
15.
S. M.
Sze
,
Physics of Semiconductor Devices
(
Wiley
,
New York
,
1981
).
16.
P. A.
Ivanov
,
M. E.
Levinshtein
,
J. W.
Palmour
,
S. L.
Rumyantsev
, and
R.
Singh
,
Semicond. Sci. Technol.
15
,
908
(
2000
).
17.
M.
Lampert
and
P.
Mark
,
Current Injection in Solids
(
Academic
,
New York
,
1970
).
18.
T. T.
Mnatsakanov
,
I. L.
Rostovtsev
, and
N. I.
Philatov
,
Solid-State Electron.
30
,
579
(
1987
).
19.
E.
Kamke
,
Partielle Differentialgleichungen erster Ordnung fur eine gesuchte Funktion
(Leipzig,
1959
).
20.
Elementary Semiconductors and A3B5 Compounds,
Handbook Series of Semiconductor Parameters
Vol.
1
, edited by
M. E.
Levinshtein
,
S. L.
Rumyantsev
,
M. S.
Shur
(
World Scientific
,
Singapore
,
1996
).
21.
Properties of Advanced Semiconductor Materials GaN, AlN, InN, SiC, SiGe
, edited by
M. E.
Levinshtein
,
S. L.
Rumyantsev
, and
M. S.
Shur
(
Wiley
,
New York
,
2001
).
You do not currently have access to this content.