Diffusion length and junction spectroscopy analysis of low-temperature annealing of electron irradiation-induced deep levels in $4H-SiC$ Available to Purchase

The effects of low-temperature annealing in $8.2MeV$ electron-irradiated $4H-SiC$ Schottky diodes were investigated. Deep-level transient spectroscopy and minority-carrier diffusion length $(Ld)$ measurements were carried out on not-irradiated samples and on irradiated samples before and after thermal treatments up to $T=450°C$⁠. We found that several deep levels in the upper half band gap (S1 with enthalpy $ET=0.27eV$⁠, S2 with $ET=0.35eV$⁠, S4 with $ET=0.71eV$⁠, and S5 with $ET=0.96eV$⁠) anneal out or modify at temperature values lower or equal to $T=450°C$⁠, whereby their progressive annealing out is accompanied by a net increase of $Ld$⁠, up to 50% of the value in the as-irradiated sample. We drew some conclusions regarding the microscopic nature of the defects related to the deep levels, according to their annealing behavior.