Ion-beam induced effects in of , , and orientations were studied by Rutherford backscattering spectrometry (RBS) in channeling configuration using He ions. Ar, K, or Na ions were step by step implanted at followed immediately by the RBS analysis without changing the sample environment. Defect annealing was observed during the RBS measurement, which is attributed to the electronic energy loss of the He ions. A similar effect occurs due to the electronic energy loss of the implanted ions, resulting in a reduced defect concentration between surface and profile maximum. The electronic energy loss of ions may change the charge state of defects, thus enhancing their mobility and causing defect annealing. The results suggest that within the collision cascade of individual ions in perfect sapphire only point defects are produced, the concentration of which is well reproduced by SRIM calculations taking into account suggested values of the displacement energies of and for aluminum and oxygen, respectively. The lower efficiency for point defect production measured in -oriented material can be explained by the heavily reduced visibility of Al atoms sitting on vacant octahedral sites, which are hidden in this direction. Point defect recombination is observed when the collision cascades start to overlap. Above a critical concentration point defects are altered into clusters which rapidly grow during further irradiation until a saturation is reached.
Skip Nav Destination
Article navigation
15 June 2006
Research Article|
June 23 2006
Ion-beam induced effects at in of different orientations
C. S. Schnohr;
C. S. Schnohr
Institut für Festkörperphysik,
Friedrich-Schiller-Universität Jena
, Max-Wien-Platz 1, D-07743 Jena, Germany
Search for other works by this author on:
E. Wendler;
E. Wendler
a)
Institut für Festkörperphysik,
Friedrich-Schiller-Universität Jena
, Max-Wien-Platz 1, D-07743 Jena, Germany
Search for other works by this author on:
K. Gärtner;
K. Gärtner
Institut für Festkörperphysik,
Friedrich-Schiller-Universität Jena
, Max-Wien-Platz 1, D-07743 Jena, Germany
Search for other works by this author on:
W. Wesch;
W. Wesch
Institut für Festkörperphysik,
Friedrich-Schiller-Universität Jena
, Max-Wien-Platz 1, D-07743 Jena, Germany
Search for other works by this author on:
K. Ellmer
K. Ellmer
Hahn-Meitner-Institut Berlin
, Glienicker Strasse 100, D-14109 Berlin, Germany
Search for other works by this author on:
a)
Electronic mail: wendler@pinet.uni-jena.de
J. Appl. Phys. 99, 123511 (2006)
Article history
Received:
February 07 2006
Accepted:
April 14 2006
Citation
C. S. Schnohr, E. Wendler, K. Gärtner, W. Wesch, K. Ellmer; Ion-beam induced effects at in of different orientations. J. Appl. Phys. 15 June 2006; 99 (12): 123511. https://doi.org/10.1063/1.2204748
Download citation file:
Sign in
Don't already have an account? Register
Sign In
You could not be signed in. Please check your credentials and make sure you have an active account and try again.
Pay-Per-View Access
$40.00
Citing articles via
A step-by-step guide to perform x-ray photoelectron spectroscopy
Grzegorz Greczynski, Lars Hultman
GaN-based power devices: Physics, reliability, and perspectives
Matteo Meneghini, Carlo De Santi, et al.
Celebrating notable advances in compound semiconductors: A tribute to Dr. Wladyslaw Walukiewicz
Kirstin Alberi, Junqiao Wu, et al.