Using a doped-channel Al0.3Ga0.7As-GaAs-In0.2Ga0.8As Greek-cross micro-Hall device as model structure, the size, and geometry effects on the absolute magnetic sensitivity and noise were investigated. The data show that although the absolute magnetic sensitivity is higher for devices with larger active areas, the self-heating effects at moderate and high electric fields are more detrimental for larger devices than for smaller ones. For this reason, the scaled absolute sensitivity is greater for smaller devices. The geometry is further optimized using finite element method simulations. Rounding the corners within the Greek-cross geometry results in lower peak electric fields and therefore a higher signal-to-noise sensitivity.

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