Organic phototransistors (OPTs) were fabricated from pentacene and copper phthalocyanine (CuPC) based on the geometry of organic field-effect transistors (OFETs); and the effect of the wavelength of the incident light source on their performance was examined. High performance OFETs with pentacene and CuPC were fabricated and the characteristics of the OPTs were examined under UV and visible-light irradiations with top illumination. The CuPC and pentacene OPTs show a high responsivities of 0.5–2 and and maximum of 3000 and , respectively, under UV light. However, under visible light, at a wavelength of , the pentacene OPTs had 100 times less responsivity, , and a of 1000, even though an absorption coefficient three times larger was observed at this wavelength than at . A strong correlation was found between the performance of the OPTs and the incident photon to current conversion efficiency spectra of an organic semiconductor. The strong dependence on the wavelength of incident light of the performance of the prepared OPTs can be explained by an internal filter effect in which light with a large absorption coefficient is filtered at the top surface and through the bulk of the film when light is directed onto the opposite side of the OFET gate electrode. Thus, light cannot efficiently contribute to the generation of charge carriers in the channel regions that were formed in the first two molecular layers adjacent to the dielectric interface. Consequently, the most efficient OPTs were produced when the following conditions of incident light were satisfied: The photon energies (or frequencies) should be (i) larger than the band gap and (ii) have a relatively small absorption coefficient, since the light can penetrate down to the channel layer more efficiently when it is near the dielectric interface without any loss in absorption through the film.
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1 October 2005
Research Article|
October 07 2005
Highly sensitive thin-film organic phototransistors: Effect of wavelength of light source on device performance Available to Purchase
Yong-Young Noh;
Yong-Young Noh
a)
Center for Frontier Materials, Department of Materials Science and Engineering,
Gwangju Institute of Science and Technology (GIST)
, 1 Oryong-Dong, Buk-Gu, Gwangju 500-712, Republic of Korea
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Dong-Yu Kim;
Dong-Yu Kim
b)
Center for Frontier Materials, Department of Materials Science and Engineering,
Gwangju Institute of Science and Technology (GIST)
, 1 Oryong-Dong, Buk-Gu, Gwangju 500-712, Republic of Korea
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Kiyoshi Yase
Kiyoshi Yase
c)
Photonics Research Institute,
National Institute of Advanced Industrial Science and Technology (AIST)
, 1-1-1 Higashi, Tsukuba, Ibaraki 305-8565, Japan
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Yong-Young Noh
a)
Dong-Yu Kim
b)
Kiyoshi Yase
c)
Center for Frontier Materials, Department of Materials Science and Engineering,
Gwangju Institute of Science and Technology (GIST)
, 1 Oryong-Dong, Buk-Gu, Gwangju 500-712, Republic of Koreaa)
Present address: Cavendish Laboratory, University of Cambridge, Madingley Road, Cambridge CB3 0HE, UK.
b)
Electronic mail: [email protected]
c)
Electronic mail: [email protected]
J. Appl. Phys. 98, 074505 (2005)
Article history
Received:
April 11 2005
Accepted:
August 16 2005
Citation
Yong-Young Noh, Dong-Yu Kim, Kiyoshi Yase; Highly sensitive thin-film organic phototransistors: Effect of wavelength of light source on device performance. J. Appl. Phys. 1 October 2005; 98 (7): 074505. https://doi.org/10.1063/1.2061892
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