We have measured a resonant Raman scattering from polycrystalline silicon (poly-Si) films with thicknesses of 24381nm at the depth resolution of approximately 5nm and found that poly-Si films are under compressive stress. The main Raman peak in poly-Si films tends to shift to a higher frequency as the thickness of the underlayer of the silicon dioxide (SiO2) film becomes greater. From this result, it has been considered that the compressive stress becomes larger with an increase in the thickness of the underlayer of the SiO2 film. We have tried to separate the observed Raman shifts into those caused by the crystallite size effect and those caused by stress in the poly-Si films. We did this using the resonant Raman scattering technique and calculation by the phonon confinement model. It has been found that the crystallite size obtained from the Raman measurement roughly agrees with the size obtained from the x-ray measurement. This result suggests that the phonon-dispersion curve does not change significantly under the compressive stress of 102MPa order.

1.
S.
Kambayashi
,
T.
Hamasaki
,
T.
Nakakubo
,
M.
Watanabe
, and
H.
Tango
,
Extended Abstracts of the 18th Conference on the SSDM
,
Tokyo
,
1986
(unpublished), p.
415
.
2.
I.
De Wolf
,
J.
Vanhellemont
,
A.
Romano-Rodriguez
,
H.
Norstöm
, and
H. E.
Maes
,
J. Appl. Phys.
71
,
898
(
1992
).
3.
I.
De Wolf
,
H.
Norstöm
, and
H. E.
Maes
,
J. Appl. Phys.
74
,
4490
(
1993
).
4.
Y.
Katsumata
,
I.
Katakabe
,
N.
Itoh
,
E.
Tsukioka
,
C.
Yoshino
, and
H.
Iwai
, Bipolar/C-MOS Circuit and Technology Meeting (1991), p. 271.
5.
S.
Nadahara
,
S.
Kambayashi
,
M.
Watanabe
, and
T.
Nakakubo
,
Extended Abstracts of the 19th Conference on the SSDM
,
Tokyo
,
1987
(unpublished), p.
327
.
6.
M.
Yoshikawa
,
M.
Maegawa
,
G.
Katagiri
, and
H.
Ishida
,
J. Appl. Phys.
78
,
941
(
1995
).
7.
M.
Yoshikawa
and
N.
Nagai
, in
Handbook of Vibrational Spectroscopy
, edited by
J. M.
Chalmers
and
P. R.
Griffiths
(
Wiley
, Chichester,
2002
), p.
2593
.
8.
J. B.
Renucci
,
R. N.
Tyte
, and
M.
Cardona
,
Phys. Rev. B
11
,
3885
(
1975
).
9.
M.
Holts
,
W. M.
Duncan
,
S.
Zollner
, and
R.
Lie
,
J. Appl. Phys.
88
,
2523
(
2000
).
10.
H.
Xia
,
Y. L.
He
,
L. C.
Wang
,
W.
Zhang
,
X. N.
Liu
,
X. K.
Zhang
,
D.
Feng
, and
H. E.
Jackson
,
J. Appl. Phys.
78
,
6705
(
1995
).
11.
Handbook of Vibrational Spectroscopy
, edited by
E. D.
Palik
(
Academic
, Tokyo,
1985
), p.
547
.
12.
H.
Richter
,
Z. P.
Wang
, and
L.
Ley
,
Solid State Commun.
39
,
625
(
1981
).
13.
M.
Fauchet
and
I. H.
Campbell
,
Crit. Rev. Solid State Mater. Sci.
14
,
S79
(
1988
).
14.
M.
Yoshikawa
,
Y.
Mori
,
H.
Obata
,
M.
Maegawa
,
G.
Katagiri
,
H.
Ishida
, and
A.
Ishitani
,
Appl. Phys. Lett.
67
,
694
(
1995
).
15.
P.
Mishra
and
K. P.
Jain
,
Phys. Rev. B
64
,
073304
(
2001
).
16.
F.
Cerdeira
,
C. J.
Buchenauer
,
F. H.
Pollak
, and
M.
Cardona
,
Phys. Rev. B
5
,
580
(
1972
).
17.
E.
Anastassakis
,
Physical Problems in Microelectronics, Proceedings of the 4th International School ISPPM
,
Varan
, Bulgaria, 12–18 May
1985
, edited by
J.
Kassavod
(unpublished), p.
128
.
18.
V.
Paillard
,
P.
Puech
,
M. A.
Laguna
,
P.
Temple-Boyer
,
B.
Caussat
,
J. P.
Couderc
, and
B.
de Mauduit
,
Appl. Phys. Lett.
73
,
1718
(
1998
).
19.
Introduction to Solid State Physics
, edited by
C.
Kittel
(
Wiley
, Chichester,
1996
), p.
83
.
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