Three different diffusion models in SiGeC layers are compared and evaluated for their implementation in the process simulation program Taurus TSUPREM-4™ (TSUPREM-4 computer code from Synopsys, Inc.). The models considered in the evaluation are verified for actual process conditions of modern SiGeC heterojunction bipolar transistors in bipolar complementary metal-oxide-semiconductor technologies. Rapid thermal annealing temperatures in the range of 10201070°C were used for the present study. In this study it is shown that the compared models are similar to each other despite the different physical approach. A common set of coefficients was used for the simulations of the three models under study.

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