Photoluminescence in (GaIn)(NAs) quantum wells designed for laser emission was studied experimentally and theoretically. The observed temperature dependences of the luminescence Stokes shift and of the spectral linewidth evidence the essential role of disorder in the dynamics of the recombining excitations. The spatial and energy disorders can cause a localization of photocreated excitations supposedly in the form of excitons. Theoretical study of the exciton dynamics is performed via kinetic Monte Carlo simulations of exciton hopping and recombination in the manifold of localized states. Direct comparison between experimental spectra and theoretical calculations provides quantitative information on the energy scale of the potential fluctuations in (GaIn)(NAs) quantum wells. The results enable one to quantify the impact of annealing on the concentration of localized states and/or on the localization length of excitons in (GaIn)(NAs) quantum wells.
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15 September 2005
Research Article|
September 27 2005
Quantitative description of disorder parameters in (GaIn)(NAs) quantum wells from the temperature-dependent photoluminescence spectroscopy
O. Rubel;
O. Rubel
a)
Department of Physics and Material Sciences Center,
Philipps-University Marburg
, Marburg D-35032, Germany
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M. Galluppi;
M. Galluppi
Infineon Technologies AG
, Corporate Research Photonics, Munich D-81730, Germany
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S. D. Baranovskii;
S. D. Baranovskii
Department of Physics and Material Sciences Center,
Philipps-University Marburg
, Marburg D-35032, Germany
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K. Volz;
K. Volz
Department of Physics and Material Sciences Center,
Philipps-University Marburg
, Marburg D-35032, Germany
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L. Geelhaar;
L. Geelhaar
Infineon Technologies AG
, Corporate Research Photonics, Munich D-81730, Germany
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H. Riechert;
H. Riechert
Infineon Technologies AG
, Corporate Research Photonics, Munich D-81730, Germany
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P. Thomas;
P. Thomas
Department of Physics and Material Sciences Center,
Philipps-University Marburg
, Marburg D-35032, Germany
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W. Stolz
W. Stolz
Department of Physics and Material Sciences Center,
Philipps-University Marburg
, Marburg D-35032, Germany
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O. Rubel
a)
M. Galluppi
S. D. Baranovskii
K. Volz
L. Geelhaar
H. Riechert
P. Thomas
W. Stolz
Department of Physics and Material Sciences Center,
Philipps-University Marburg
, Marburg D-35032, Germanya)
Electronic mail: [email protected]
J. Appl. Phys. 98, 063518 (2005)
Article history
Received:
May 17 2005
Accepted:
August 10 2005
Citation
O. Rubel, M. Galluppi, S. D. Baranovskii, K. Volz, L. Geelhaar, H. Riechert, P. Thomas, W. Stolz; Quantitative description of disorder parameters in (GaIn)(NAs) quantum wells from the temperature-dependent photoluminescence spectroscopy. J. Appl. Phys. 15 September 2005; 98 (6): 063518. https://doi.org/10.1063/1.2058192
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