We consider the transport properties of polar direct-gap semiconductors in an electric field, specializing the numerical calculation of the general theory to the case of -doped III-nitrides, in particular, GaN, AlN, and InN. The nonequilibrium thermodynamic state of these materials—characterized by the variables so-called quasitemperature, quasichemical potential, and drift velocity of the carriers, and the quasitemperatures of longitudinal optical and acoustical phonons—is studied. The evolution equations of these variables—which are highly nonlinear—are derived, and the transient regime and the ensuing steady state are analyzed. The nonlinear transport is characterized and its main properties are discussed. In one case comparison with a recent Monte Carlo calculation is made and good agreement is obtained. In this paper we mainly consider the ultrafast transient, and in the following paper the steady state.
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15 August 2005
Research Article|
August 17 2005
Nonlinear transport properties of III-nitrides in electric field Available to Purchase
Clóves G. Rodrigues;
Clóves G. Rodrigues
a)
Núcleo de Pesquisa em Física, Departamento de Física,
Universidade Catolica de Goiás
, 74605-010 Goiânia, Goiás, Brazil
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Áurea R. Vasconcellos;
Áurea R. Vasconcellos
Instituto de Física ”Gleb Wataghin,”
Universidade Estadual de Campinas (UNICAMP)
, 13083-970 Campinas, São Paulo, Brazil
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Roberto Luzzi;
Roberto Luzzi
Instituto de Física ”Gleb Wataghin,”
Universidade Estadual de Campinas (UNICAMP)
, 13083-970 Campinas, São Paulo, Brazil
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Valder N. Freire
Valder N. Freire
Departamento de Física,
Universidade Federal do Ceará
, 60455-760, Fortaleza, Ceará, Brazil
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Clóves G. Rodrigues
a)
Núcleo de Pesquisa em Física, Departamento de Física,
Universidade Catolica de Goiás
, 74605-010 Goiânia, Goiás, Brazil
Áurea R. Vasconcellos
Instituto de Física ”Gleb Wataghin,”
Universidade Estadual de Campinas (UNICAMP)
, 13083-970 Campinas, São Paulo, Brazil
Roberto Luzzi
Instituto de Física ”Gleb Wataghin,”
Universidade Estadual de Campinas (UNICAMP)
, 13083-970 Campinas, São Paulo, Brazil
Valder N. Freire
Departamento de Física,
Universidade Federal do Ceará
, 60455-760, Fortaleza, Ceará, Brazila)
Electronic mail: [email protected]
J. Appl. Phys. 98, 043702 (2005)
Article history
Received:
September 28 2004
Accepted:
June 21 2005
Connected Content
A companion article has been published:
Nonlinear transport properties of doped III-N and GaAs polar semiconductors: A comparison
Citation
Clóves G. Rodrigues, Áurea R. Vasconcellos, Roberto Luzzi, Valder N. Freire; Nonlinear transport properties of III-nitrides in electric field. J. Appl. Phys. 15 August 2005; 98 (4): 043702. https://doi.org/10.1063/1.1999024
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