CdO(110) layers with a self-organized surface structure have been grown on (101¯0) sapphire (m plane) substrates by metal-organic vapor phase epitaxy. The epitaxial relationships between layer and substrate have been determined and a crystallographic model that accounts for the CdO in-plane orientation, which results in a reduced lattice mismatch when the CdO[001] direction is perpendicular to the sapphire c axis, has been proposed. Although the measured lattice parameters indicate that the layers are almost fully relaxed, an anisotropic mosaicity is detected with symmetrical rocking curves attaining minimum values when measured along the CdO[1¯10] direction. The layer morphology consists of a regular ridge-and-valley structure which defines, again, a preferential in-plane direction. The grooves run parallel to the CdO[001] axis and exhibit lateral surfaces sloped at 28° with respect to the (110) surface. The influence of growth temperature and VI∕II molar ratio on the anisotropic mosaicity and morphology has been analyzed.

1.
For a recent review in patterned surfaces see:
M.
Geissler
and
Y.
Xia
,
Adv. Mater. (Weinheim, Ger.)
16
,
1249
(
2004
) and references therein.
2.
R.
Nötzel
,
Z.
Niu
,
M.
Ramsteiner
,
H. P.
Schönherr
,
A.
Tranpert
,
L.
Däweritz
, and
K. H.
Ploog
,
Nature (London)
392
,
56
(
1998
).
3.
T.
Teranishi
,
A.
Sugawara
,
T.
Shimizu
, and
M.
Miyake
,
J. Am. Chem. Soc.
124
,
4210
(
2002
).
4.
A.
Sugawara
and
M. R.
Scheinfein
,
Phys. Rev. B
56
,
R8499
(
1997
).
5.
S.
Okamoto
,
O.
Kitakami
,
T.
Miyazaki
,
Y.
Shimada
,
Y. K.
Takahashi
, and
K.
Hono
,
J. Appl. Phys.
96
,
5217
(
2004
).
6.
J.
Fujita
,
H.
Watanabe
,
Y.
Ochiai
,
S.
Manako
,
J. S.
Tsai
, and
S.
Matsui
,
Appl. Phys. Lett.
66
,
3065
(
1995
).
7.
A.
Sugawara
,
Y.
Haga
, and
O.
Nittono
,
J. Magn. Magn. Mater.
156
,
151
(
1996
).
8.
A.
Sugawara
,
T.
Coyle
,
G. G.
Hembree
, and
M. R.
Scheinfein
,
Appl. Phys. Lett.
70
,
1043
(
1997
).
10.
J.
Goniakowski
and
C.
Noguera
,
Surf. Sci.
340
,
191
(
1995
).
11.
G.
Chern
,
J. J.
Huang
, and
T. C.
Leung
,
J. Vac. Sci. Technol. A
16
,
964
(
1998
).
12.
D. R.
Giese
,
F. J.
Lamelas
,
H. A.
Owen
,
R.
Plass
, and
M.
Gajdardziska-Josifovska
,
Surf. Sci.
457
,
326
(
2000
).
13.
A.
Sugawara
and
K.
Mae
,
Surf. Sci.
558
,
211
(
2004
).
16.
T.
Makino
,
Y.
Segawa
,
M.
Kawasaki
,
A.
Ohtomo
,
R.
Shiroki
,
K.
Tamura
,
T.
Yasuda
, and
H.
Koinuma
,
Appl. Phys. Lett.
78
,
1237
(
2001
).
17.
R. J.
Guerrero-Moreno
and
N.
Takeuchi
,
Phys. Rev. B
66
,
205205
(
2002
).
18.
J.
Zúñiga-Pérez
,
C.
Munuera
,
C.
Ocal
, and
V.
Muñoz-Sanjosé
,
J. Cryst. Growth
271
,
223
(
2004
).
19.
R.
Tena-Zaera
,
J.
Zúñiga-Pérez
,
C.
Martínez-Tomás
, and
V.
Muñoz-Sanjosé
,
J. Cryst. Growth
264
,
237
(
2004
).
20.
W. F.
Kolbe
,
D. F.
Ogletree
, and
M. B.
Salmeron
,
Ultramicroscopy
42–44
,
1113
(
1992
).
21.
J.
Zúñiga-Pérez
,
C.
Martínez-Tomás
, and
V.
Muñoz-Sanjosé
,
Phys. Status Solidi C
2
,
1233
(
2005
).
22.
A.
Sugawara
and
K.
Mae
,
J. Cryst. Growth
237–239
,
201
(
2002
).
23.
C.
Munuera
,
J.
Zúñiga-Pérez
,
J. F.
Rommeluere
,
V.
Sallet
,
R.
Triboulet
,
F.
Soria
,
V.
Muñoz-Sanjosé
, and
C.
Ocal
,
J. Cryst. Growth
264
,
70
(
2004
).
24.
A. B. M. A.
Ashrafi
,
H.
Kumano
,
I.
Suemune
,
Y. W.
Ok
, and
T. Y.
Seong
,
Appl. Phys. Lett.
79
,
470
(
2001
).
25.
E.
Saiz
,
R. M.
Cannon
, and
A. P.
Tomsia
,
Acta Mater.
47
,
4209
(
1999
).
26.
U. D.
Schwarz
,
H.
Haefke
,
P.
Reimann
, and
H.
Gunterodt
,
J. Microsc.
173
,
183
(
1994
).
27.
J.-K.
Zuo
,
J. M.
Carpinelli
,
D. M.
Zehner
, and
J. F.
Wendelken
,
Phys. Rev. B
53
,
16013
(
1996
).
28.
M.
Yan
,
M.
Lane
,
C. R.
Kannewurf
, and
R. P. H.
Chang
,
Appl. Phys. Lett.
78
,
2342
(
2001
).
You do not currently have access to this content.