A model for metal-ferroelectric-metal heterostructures with Schottky contacts is proposed. The model adapts the general theories of metal-semiconductor rectifying contacts for the particular case of metal-ferroelectric contact by introducing the ferroelectric polarization as a sheet of surface charge located at a finite distance from the electrode interface, a deep trapping level of high concentration, and the static and dynamic values of the dielectric constant. Consequences of the proposed model on relevant quantities of the Schottky contact such as builtin voltage, charge density, and depletion width, as well as on the interpretation of the current-voltage and capacitance-voltage characteristics are discussed in detail.
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